SST12LP07-QVCE-MM007

2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 A Microchip Technology Company Data Sheet The SST12LP07 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, the SST12LP07 has excellent linearity, typically ~2.5% added EVM at 19 dBm output power, while meeting 802.11g spectrum mask at 22 dBm. The SST12LP07 features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin, and is offered in a 16-contact VQFN package. Features • High Gain: • Low shut-down current (< 0.1 µA) – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C • High linear output power: – >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 22 dBm – ~2.5% added EVM up to 19 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22 dBm • High power-added efficiency/Low operating current for both 802.11g/b applications • Excellent On-chip power detection –