SST12LP08-QXBE

PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP08 A Microchip Technology Company Data Sheet The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for linear high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 30 dB gain with 34% power-added efficiency, while meeting 802.11b/g spectrum mask at 23.5 dBm. The SST12LP08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact XQFN and 6-contact XSON packages. Features • High Gain: • Low Shut-down Current (~2 µA) – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C • High temperature stability – ~1 dB gain/power variation between 0°C to +85°C • High linear output power: – >28 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 6 – Meets 802.11g OFDM ACPR requirement up to 23.5 dBm – ~3% added EVM up to 20 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 23.5 dBm • High power-added efficiency/Low operating current for both 802.11g/b applications • Excellent On-chip power detection • 20 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 12-contact XQFN – 2mm x 2mm – 6-contact XSON – 1.5mm x 1.5mm • All non-Pb (lead-free) devices are RoHS compliant – ~34%/200 mA @ POUT = 23.5 dBm for 802.11b/g • Single-pin low IREF power-up/down control Applications – IREF