SST12LP14E-QX8E

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module SST12LP14E A Microchip Technology Company Product Brief SST12LP14E is a high-efficiency, ultra-compact power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology. Designed to operate over the 2.4 - 2.5 GHz frequency band, SST12LP14E typically provides 23.5 dB gain with 33% power-added efficiency at 22 dBm output.This power amplifier has excellent linearity while meeting 802.11g spectrum mask requirements up to 22 dBm. The device typically consumes only 95 mA total current at 18 dBm output power, with linear 54 Mbps 802.11g modulation. This efficiency is desirable in embedded applications such as in hand-held units. The SST12LP14E also features easy, board-level usage along with high-speed power-up/-down control through a single combined reference voltage pin and is offered in both 6- and 8-contact XSON packages. Features Block Diagram • Excellent RF Stability with Moderate Gain: VCC1 – Typically 23.5 dB gain across 2.4 – 2.5 GHz VCC2 • High Linear Output Power (at 3.3V): – Meets 802.11g OFDM ACPR requirement up to 22 dBm – ~2.5% added EVM up to 18 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 22 dBm RFIN • High Power-added Efficiency/Low Operating Current for 802.11b/g/n Applications RFOUT – ~33% @ POUT = 22 dBm for 802.11g • Limited variation over temperature Bias Circuit – 2.5 dB gain variation between -40°C to +85°C – 1 dB power variation between -40°C to +85°C • Low Shut-down Current: 15dB dynamic range –