SST12LP15B-QXBE

2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier SST12LP15B Data Sheet SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. Easily configured for high-linear operation meeting the EVM requirements for 256 QAM applications, and for high-efficiency applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency band. Configured for high efficiency, SST12LP15B will typically meet the 802.11g spectrum mask at 23 dBm with 270 mA. Configured for high linearity, SST12LP15B will provide less than 2.5% EVM, up to 20 dBm, with MCS7-HT40 modulation, and less than 1.75% EVM, up to 18 dBm, with MCS9-VHT40 modulation. This power amplifier also features easy board-level usage along with highspeed power-up/down control through the reference voltage pins. The SST12LP15B is offered in both a 3mm x 3mm, 16-contact VQFN package and a 2mm x 2mm, 12-contact XQFN package. Features • High Gain: • High temperature stability – More than 32 dB gain across 2.4–2.5 GHz over temperature -40°C to +85°C • Configured for High Linearity – Typically 1 dB gain/power variation between 0°C to +85°C • Excellent On-chip power detection – 20 dBm at 2.5% DEVM, MCS7-HT40, 200mA – 18 dBm at 1.8% DEVM, MCS9-VHT40, 180 mA – 23 dBm typical spectrum mask compliance, MCS0-20 • Configured for High Efficiency – 23 dBm at 3% DEVM, 802.11g OFDM 54 Mbps, 310mA – 25.5 dBm typical spectrum mask compliance, 802.11b, 1Mbps – >29 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 26 dBm – 20 dB linear dynamic range – Temperature- and VSWR-insensitive • Simple input/output matching • Packages available – 16-contact VQFN – 3mm x 3mm – 12-contact XQFN – 2mm x 2mm • All non-Pb (lead-free) devices are RoHS compliant • High power-added efficiency/Low operating current • Low IREF current for power-up/down control – IREF