SST12LP18E-QX8E

PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz High-Efficiency, High-Gain Power Amplifier SST12LP18E A Microchip Technology Company Data Sheet The SST12LP18E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP18E is a 2.4 GHz high-efficiency Power Amplifier designed in compliance with IEEE 802.11b/g/n/ac applications. It typically provides 25 dB gain with 32% power-added efficiency, while meeting 802.11g spectrum mask at 21.5 dBm. The SST12LP18E can be configured for high-linearity for 802.11ac operation or for high-power, high-efficiency operation. This power amplifier also features easy board-level usage along with highspeed power-up/down control through a single reference voltage pin and is offered in a 8-contact XSON package. Features • High gain: • Low shut-down current (~2 µA) – Typically 25 dB gain across 2.4~2.5 GHz • Limited variation over temperature • High linear output power: – ~1 dB gain/power variation between -20°C to +85°C – >26 dBm P1dB - Single-tone measurement - Please refer to “Absolute Maximum Stress Ratings” on page 5 – Meets 802.11g OFDM ACPR requirement up to 21.5 dBm – Meets 802.11b ACPR requirement up to 22.5 dBm – ~3% added EVM up to 18 dBm for 54 Mbps 802.11g signal – 17 dBm at 1.8% EVM, 802.11ac, 256 QAM, 2.4 GHz • High power-added efficiency/Low operating current for 802.11b/g/n applications – ~32%/135 mA @ POUT = 21.5 dBm for 802.11g – ~36%/150 mA @ POUT = 22.5 dBm for 802.11b • Single-pin low IREF power-up/down control – >15 dB dynamic range on-chip power detection – Temperature and VSWR insensitive • Simple output matching • Packages available – 8-contact XSON – 2mm x 2mm • All non-Pb (lead-free) devices are RoHS compliant Applications • WLAN (IEEE 802.11b/g/n/ac) – IREF