SST26WF016B-104I/SN

SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - Mode 0 and Mode 3 - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol • High Speed Clock Frequency - 104 MHz max • Burst Modes - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around • Superior Reliability - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention • Low Power Consumption: - Active Read current: 15 mA (typical @ 104 MHz) - Standby current: 10 μA (typical) - Deep Power-Down current: 2.5 μA (typical) • Fast Erase Time - Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max) • Page-Program - 256 Bytes per page in x1 or x4 mode • End-of-Write Detection - Software polling the BUSY bit in status register • Flexible Erase Capability - Uniform 4 KByte sectors - Four 8 KByte top and bottom parameter overlay blocks - One 32 KByte top and bottom overlay block - Uniform 64 KByte overlay blocks • Write-Suspend - Suspend Program or Erase operation to access another block/sector • Software Reset (RST) mode • Software Protection - Individual-Block Write Protection with permanent lock-down capability - 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks - Read Protection on top and bottom 8 KByte parameter blocks  2014 Microchip Technology Inc. • Security ID - One-Time Programmable (OTP) 2 KByte, Secure ID - 64 bit unique, factory pre-programmed identifier - User-programmable area • Temperature Range - Industrial: -40°C to +85°C • Packages Available - 8-contact WDFN (6mm x 5mm) - 8-lead SOIC (150 mil) - 8-ball Chip Scale Package (Z-Scale™) • All devices are RoHS compliant Product Description The Serial Quad I/O™ (SQI™) family of flash-memory devices features a six-wire, 4-bit I/O interface that allows for low-power, high-performance operation in a low pin-count package. SST26WF016B/016BA also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST26WF016B/SST26WF016BA significantly improves performance and reliability, while lowering power consumption. This device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. SST26WF016B/016BA is offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIC (150 mil), and 8-ball XFBGA (Z-Scale™) packages. See Figure 2-1 for pin assignments. Two configurations are available upon order: SST26WF016B default at power-up has the WP# and Hold# pins enabled and SST26WF016BA default at power-up has the WP# and Hold# pins disabled. DS20005013D-page 1 SST26WF016B/SST26WF016BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via Email at docerrors@microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: http://www.microchip.com You can determine the version of a data sheet by examining its literature number found on the bottom outside corner of any page. The last character of the literature number is the version number, (e.g., DS30000000A is version A of document DS30000000). Errata An errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for current devices. As device/documentation issues become known to us, we will publish an errata sheet. The errata will specify the revision of silicon and revision of document to which it applies. To determine if an errata sheet exists for a particular device, please check with one of the following: • Microchip’s Worldwide Web site; http://www.microchip.com • Your local Microchip sales office (see last page) When contacting a sales office, please specify which device, revision of silicon and data sheet (include literature number) you are using. Customer Notification System Register on our web site at www.microchip.com to receive the most current information on all of our products. DS20005013D-page 2  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 1.0 BLOCK DIAGRAM FIGURE 1-1: FUNCTIONAL BLOCK DIAGRAM OTP Address Buffers and Latches X - Decoder SuperFlash Memory Y - Decoder Page Buffer, I/O Buffers and Data Latches Control Logic Serial Interface WP# HOLD# SCK CE# SIO [3:0] 1432 B1.0  2014 Microchip Technology Inc. DS20005013D-page 3 SST26WF016B/SST26WF016BA 2.0 PIN DESCRIPTION FIGURE 2-1: PIN DESCRIPTION FOR 8-LEAD SOIC, 8-CONTACT WDFN, AND 8-BALL XFBGA CE# 1 SO/SIO1 2 8 VDD 7 HOLD/SIO3 CE# 1 SO/SIO1 2 Top View 8 VDD 7 HOLD/SIO3 Top View WP#/SIO2 3 6 SCK VSS 4 5 SI/SIO0 WP#/SIO2 3 6 SCK VSS 4 5 SI/SIO0 1432 08-soic S2A P1.0 1432 08-wson QA P1.0 8-Contact WDFN 8-Lead SOIC Top View (Balls Facing Down) 2 CE# SO/SIO1 WP#/ SIO2 VSS 1 VDD HOLD/ SIO3 A B SCK SI/SIO0 C D 8-xfbga P1.0 8-Ball XFBGA DS20005013D-page 4  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA TABLE 2-1: PIN DESCRIPTION Symbol Pin Name Functions SCK Serial Clock To provide the timing of the serial interface. Commands, addresses, or input data are latched on the rising edge of the clock input, while output data is shifted out on the falling edge of the clock input. SIO[3:0] Serial Data Input/Output To transfer commands, addresses, or data serially into the device or data out of the device. Inputs are latched on the rising edge of the serial clock. Data is shifted out on the falling edge of the serial clock. The Enable Quad I/O (EQIO) command instruction configures these pins for Quad I/O mode. SI Serial Data Input for SPI mode To transfer commands, addresses or data serially into the device. Inputs are latched on the rising edge of the serial clock. SI is the default state after a power on reset. SO Serial Data Output for SPI mode To transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock. SO is the default state after a power on reset. CE# Chip Enable The device is enabled by a high to low transition on CE#. CE# must remain low for the duration of any command sequence; or in the case of Write operations, for the command/data input sequence. WP# Write Protect The WP# pin is used in conjunction with the WPEN and IOC bits in the configuration register to prohibit Write operations to the Block-Protection register. This pin only works in SPI, single-bit and dual-bit Read mode. HOLD# Hold Temporarily stops serial communication with the SPI Flash memory while the device is selected. This pin only works in SPI, single-bit and dual-bit Read mode. This pin must be tied high when not in use. VDD Power Supply To provide power supply voltage. VSS Ground  2014 Microchip Technology Inc. DS20005013D-page 5 SST26WF016B/SST26WF016BA 3.0 MEMORY ORGANIZATION The SST26WF016B/016BA SQI memory array is organized in uniform, 4 KByte erasable sectors with the following erasable blocks: eight 8 KByte parameter, two 32 KByte overlay, and thirty 64 KByte overlay blocks. See Figure 3-1. FIGURE 3-1: MEMORY MAP Top of Memory Block 8 KByte 8 KByte 8 KByte 8 KByte 32 KByte ... 64 KByte 2 Sectors for 8 KByte blocks 8 Sectors for 32 KByte blocks 16 Sectors for 64 KByte blocks 64 KByte ... 4 KByte 4 KByte 4 KByte 4 KByte 64 KByte 32 KByte 8 KByte 8 KByte 8 KByte 8 KByte Bottom of Memory Block 1432 F41.0 DS20005013D-page 6  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 4.0 DEVICE OPERATION the two modes is the state of the SCK signal when the bus master is in stand-by mode and no data is being transferred. The SCK signal is low for Mode 0 and SCK signal is high for Mode 3. For both modes, the Serial Data I/O (SIO[3:0]) is sampled at the rising edge of the SCK clock signal for input, and driven after the falling edge of the SCK clock signal for output. The traditional SPI protocol uses separate input (SI) and output (SO) data signals as shown in Figure 4-1. The SQI protocol uses four multiplexed signals, SIO[3:0], for both data in and data out, as shown in Figure 4-2. This means the SQI protocol quadruples the traditional bus transfer speed at the same clock frequency, without the need for more pins on the package. The SST26WF016B/016BA support both Serial Peripheral Interface (SPI) bus protocol and a 4-bit multiplexed SQI bus protocol. To provide backward compatibility to traditional SPI Serial Flash devices, the device’s initial state after a power-on reset is SPI mode which supports multi-I/O (x1/x2/x4) Read/Write commands. A command instruction configures the device to SQI mode. The dataflow in the SQI mode is similar to the SPI mode, except it uses four multiplexed I/O signals for command, address, and data sequence. SQI Flash Memory supports both Mode 0 (0,0) and Mode 3 (1,1) bus operations. The difference between FIGURE 4-1: SPI PROTOCOL (TRADITIONAL 25 SERIES SPI DEVICE) CE# SCK MODE 3 MODE 3 MODE 0 MODE 0 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 SI MSB SO HIGH IMPEDANCE DON T CARE Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 MSB FIGURE 4-2: 1432 F03.0 SQI SERIAL QUAD I/O PROTOCOL CE# MODE 3 MODE 3 CLK MODE 0 SIO(3:0) MODE 0 C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2 H3 L3 MSB 1432 F04.0 4.1 Device Protection The SST26WF016B/016BA offers a flexible memory protection scheme that allows the protection state of each individual block to be controlled separately. In addition, the Write-Protection Lock-Down register prevents any change of the lock status during device operation. To avoid inadvertent writes during power-up, the device is write-protected by default after a power-on reset cycle. A Global Block-Protection Unlock command offers a single command cycle that unlocks the entire memory array for faster manufacturing throughput. For extra protection, there is an additional non-volatile register that can permanently write-protect the BlockProtection register bits for each individual block. Each of the corresponding lock-down bits are one time programmable (OTP)—once written, they cannot be erased. Data that had been previously programmed into these blocks cannot be altered by programming or erase and is not reversible  2014 Microchip Technology Inc. 4.1.1 INDIVIDUAL BLOCK PROTECTION The SST26WF016B/016BA has a Block-Protection register which provides a software mechanism to writelock the individual memory blocks and write-lock, and/ or read-lock, the individual parameter blocks. The Block-Protection register is 48 bits wide: two bits each for the eight 8 KByte parameter blocks (write-lock and read-lock), and one bit each for the remaining 32 KByte and 64 KByte overlay blocks (write-lock). See Table 56 for address range protected per register bit. Each bit in the Block-Protection register (BPR) can be written to a ‘1’ (protected) or ‘0’ (unprotected). For the parameter blocks, the most significant bit is for read-lock, and the least significant bit is for write-lock. Read-locking the parameter blocks provides additional security for sensitive data after retrieval (e.g., after initial boot). If a block is read-locked all reads to the block return data 00H. The Write Block-Protection Register command is a two-cycle command which requires that Write-Enable (WREN) is executed prior to the Write Block-Protection DS20005013D-page 7 SST26WF016B/SST26WF016BA Register command. The Global Block-Protection Unlock command clears all write protection bits in the Block-Protection register. 4.1.2 WRITE-PROTECTION LOCKDOWN (VOLATILE) To prevent changes to the Block-Protection register, use the Lock-Down Block-Protection Register (LBPR) command to enable Write-Protection Lock-Down. Once Write-Protection Lock-Down is enabled, the Block-Protection register can not be changed. To avoid inadvertent lock down, the WREN command must be executed prior to the LBPR command. To reset Write-Protection Lock-Down, performing a power cycle on the device is required. The Write-Protection Lock-Down status may be read from the Status register. 4.1.3 WRITE-LOCK LOCK-DOWN (NONVOLATILE) The non-Volatile Write-Lock Lock-Down register is an alternate register that permanently prevents changes to the block-protect bits. The non-Volatile Write-Lock Lock-Down register (nVWLDR) is 40 bits wide per device: one bit each for the eight 8-KByte parameter blocks, and one bit each for the remaining 32 KByte and 64 KByte overlay blocks. See Table 5-6 for address range protected per register bit. Writing ‘1’ to any or all of the nVWLDR bits disables the change mechanism for the corresponding Write-Lock bit in the BPR, and permanently sets this bit to a ‘1’ (protected) state. After this change, both bits will be set to ‘1’, regardless of the data entered in subsequent writes to either the nVWLDR or the BPR. Subsequent writes to the nVWLDR can only alter available locations that have not been previously written to a ‘1’. This method provides write-protection for the corresponding memory-array block by protecting it from future program or erase operations. Writing a ‘0’ in any location in the nVWLDR has no effect TABLE 4-1: WP# L L L L H H X X on either the nVWLDR or the corresponding Write-Lock bit in the BPR. Note that if the Block-Protection register had been previously locked down, see “ Write-Protection LockDown (Volatile)”, the device must be power cycled before using the nVWLDR. If the Block-Protection register is locked down and the Write nVWLDR command is accessed, the command will be ignored. 4.2 Hardware Write Protection The hardware Write Protection pin (WP#) is used in conjunction with the WPEN and IOC bits in the configuration register to prohibit write operations to the Block-Protection and Configuration registers. The WP# pin function only works in SPI single-bit and dual-bit read mode when the IOC bit in the configuration register is set to ‘0’. The WP# pin function is disabled when the WPEN bit in the configuration register is ‘0’. This allows installation of the SST26WF016B/016BA in a system with a grounded WP# pin while still enabling Write to the Block-Protection register. The Lock-Down function of the Block-Protection Register supersedes the WP# pin, see Table 4-1 for Write Protection Lock-Down states. The factory default setting at power-up of the WPEN bit is ‘0’, disabling the Write Protect function of the WP# after power-up. WPEN is a non-volatile bit; once the bit is set to ‘1’, the Write Protect function of the WP# pin continues to be enabled after power-up. The WP# pin only protects the Block-Protection Register and Configuration Register from changes. Therefore, if the WP# pin is set to low before or after a Program or Erase command, or while an internal Write is in progress, it will have no effect on the Write command. The IOC bit takes priority over the WPEN bit in the configuration register. When the IOC bit is ‘1’, the function of the WP# pin is disabled and the WPEN bit serves no function. When the IOC bit is ‘0’ and WPEN is ‘1’, setting the WP# pin active low prohibits Write operations to the Block Protection Register. WRITE PROTECTION LOCK-DOWN STATES IOC 0 0 0 01 0 0 1 13 WPEN 1 0 1 02 X X X 02 WPLD 1 1 0 0 1 0 1 0 Execute WBPR Instruction Not Allowed Not Allowed Not Allowed Allowed Not Allowed Allowed Not Allowed Allowed Configuration Register Protected Writable Protected Writable Writable Writable Writable Writable 1. Default at power-up Register settings for SST26WF016B 2. Factory default setting is ‘0’. This is a non-volatile bit; default at power-up is the value set prior to power-down. 3. Default at power-up Register settings for SST26WF016BA DS20005013D-page 8  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 4.3 Security ID SST26WF016B/016BA offers a 2 KByte Security ID (Sec ID) feature. The Security ID space is divided into two parts – one factory-programmed, 64-bit segment and one user-programmable segment. The factoryprogrammed segment is programmed during manufacturing with a unique number and cannot be changed. The user-programmable segment is left unprogrammed for the customer to program as desired. Use the Program Security ID (PSID) command to program the Security ID using the address shown in Table 5-5. The Security ID can be locked using the Lockout Security ID (LSID) command. This prevents any future write operations to the Security ID. The factory-programmed portion of the Security ID can’t be programmed by the user; neither the factoryprogrammed nor user-programmable areas can be erased. 4.4 Hold Operation The HOLD# pin pauses active serial sequences without resetting the clocking sequence. This pin is active after every power up and only operates during SPI single-bit and dual-bit modes. Two factory configurations are available: SST26WF016B ships with the IOC FIGURE 4-3: bit set to ‘0’ and the HOLD# pin function enabled; SST26WF016BA ships with the IOC bit set to ‘1’ and the HOLD# pin function disabled. The HOLD# pin is always disabled in SQI mode and only works in SPI single-bit and dual-bit read mode. To activate the Hold mode, CE# must be in active low state. The Hold mode begins when the SCK active low state coincides with the falling edge of the HOLD# signal. The Hold mode ends when the HOLD# signal’s rising edge coincides with the SCK active low state. If the falling edge of the HOLD# signal does not coincide with the SCK active low state, then the device enters Hold mode when the SCK next reaches the active low state. Similarly, if the rising edge of the HOLD# signal does not coincide with the SCK active low state, then the device exits Hold mode when the SCK next reaches the active low state. See Figure 4-3. Once the device enters Hold mode, SO will be in high impedance state while SI and SCK can be VIL or VIH. If CE# is driven active high during a Hold condition, it resets the internal logic of the device. As long as HOLD# signal is low, the memory remains in the Hold condition. To resume communication with the device, HOLD# must be driven active high, and CE# must be driven active low. HOLD CONDITION WAVEFORM. SCK HOLD# Active Hold Active Hold Active 1432 F46.0  2014 Microchip Technology Inc. DS20005013D-page 9 SST26WF016B/SST26WF016BA 4.5 Status Register The Status register is a read-only register that provides the following status information: whether the flash memory array is available for any Read or Write operation, if the device is write-enabled, whether an erase or program operation is suspended, and if the Block- TABLE 4-2: Protection register and/or Security ID are locked down. During an internal Erase or Program operation, the Status register may be read to determine the completion of an operation in progress. Table 4-2 describes the function of each bit in the Status register. STATUS REGISTER Default at Power-up Read/Write (R/ W) Write operation status 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 0 R WEL Write-Enable Latch status 1 = Device is write-enabled 0 = Device is not write-enabled 0 R 2 WSE Write Suspend-Erase status 1 = Erase suspended 0 = Erase is not suspended 0 R 3 WSP Write Suspend-Program status 1 = Program suspended 0 = Program is not suspended 0 R 4 WPLD Write Protection Lock-Down status 1 = Write Protection Lock-Down enabled 0 = Write Protection Lock-Down disabled 0 R 5 SEC1 Security ID status 1 = Security ID space locked 0 = Security ID space not locked 01 R Bit Name Function 0 BUSY 1 6 RES Reserved for future use 0 R 7 BUSY Write operation status 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 0 R 1. The Security ID status will always be ‘1’ at power-up after a successful execution of the Lockout Security ID instruction, otherwise default at power-up is ‘0’. 4.5.1 WRITE-ENABLE LATCH (WEL) The Write-Enable Latch (WEL) bit indicates the status of the internal memory’s Write-Enable Latch. If the WEL bit is set to ‘1’, the device is write enabled. If the bit is set to ‘0’ (reset), the device is not write enabled and does not accept any memory Program or Erase, Protection Register Write, or Lock-Down commands. The Write-Enable Latch bit is automatically reset under the following conditions: • • • • • • • • • Power-up Reset Write-Disable (WRDI) instruction Page-Program instruction completion Sector-Erase instruction completion Block-Erase instruction completion Chip-Erase instruction completion Write-Block-Protection register instruction Lock-Down Block-Protection register instruction DS20005013D-page 10 • • • • • Program Security ID instruction completion Lockout Security ID instruction completion Write-Suspend instruction SPI Quad Page Program Write Status Register 4.5.2 WRITE SUSPEND ERASE STATUS (WSE) The Write Suspend-Erase status (WSE) indicates when an Erase operation has been suspended. The WSE bit is ‘1’ after the host issues a suspend command during an Erase operation. Once the suspended Erase resumes, the WSE bit is reset to ‘0’.  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 4.5.3 WRITE SUSPEND PROGRAM STATUS (WSP) The Write Suspend-Program status (WSP) bit indicates when a Program operation has been suspended. The WSP is ‘1’ after the host issues a suspend command during the Program operation. Once the suspended Program resumes, the WSP bit is reset to ‘0’. 4.5.4 WRITE PROTECTION LOCK-DOWN STATUS (WPLD) The Write Protection Lock-Down status (WPLD) bit indicates when the Block-Protection register is lockeddown to prevent changes to the protection settings. The WPLD is ‘1’ after the host issues a Lock-Down Block-Protection command. After a power cycle, the WPLD bit is reset to ‘0’. 4.5.5 SECURITY ID STATUS (SEC) The Security ID Status (SEC) bit indicates when the Security ID space is locked to prevent a Write command. The SEC is ‘1’ after the host issues a Lockout SID command. Once the host issues a Lockout SID command, the SEC bit can never be reset to ‘0.’ 4.5.6 BUSY The Busy bit determines whether there is an internal Erase or Program operation in progress. If the BUSY bit is ‘1’, the device is busy with an internal Erase or Program operation. If the bit is ‘0’, no Erase or Program operation is in progress.  2014 Microchip Technology Inc. DS20005013D-page 11 SST26WF016B/SST26WF016BA 4.6 Configuration Register The Configuration register is a Read/Write register that stores a variety of configuration information. See Table 4-3 for the function of each bit in the register. TABLE 4-3: Bit 0 CONFIGURATION REGISTER Name Function Default at Power-up Read/Write (R/W) RES Reserved 0 R I/O Configuration for SPI Mode 1 = WP# and HOLD# pins disabled 0 = WP# and HOLD# pins enabled 01 R/W IOC 1 2 RES Reserved 0 R BPNV Block-Protection Volatility State 1 = No memory block has been permanently locked 0 = Any block has been permanently locked 1 R 3 4 RES Reserved 0 R 5 RES Reserved 0 R 6 RES Reserved 0 R WPEN Write-Protection Pin (WP#) Enable 1 = WP# enabled 0 = WP# disabled 02 R/W 7 1. SST26WF016B default at Power-up is ‘0’ SST26WF016BA default at Power-up is ‘1’ 2. Factory default setting. This is a non-volatile bit; default at power-up will be the setting prior to power-down. 4.6.1 I/O CONFIGURATION (IOC) The I/O Configuration (IOC) bit re-configures the I/O pins. The IOC bit is set by writing a ‘1’ to Bit 1 of the Configuration register. When IOC bit is ‘0’ the WP# pin and HOLD# pin are enabled (SPI or Dual Configuration setup). When IOC bit is set to ‘1’ the SIO2 pin and SIO3 pin are enabled (SPI Quad I/O Configuration setup). The IOC bit must be set to ‘1’ before issuing the following SPI commands: SQOR (6BH), SQIOR (EBH), RBSPI (ECH), and SPI Quad page program (32H). Without setting the IOC bit to ‘1’, those SPI commands are not valid. The I/O configuration bit does not apply when in SQI mode. The default at power-up for SST26WF016B is ‘0’ and for SST26WF016BA is ‘1’. 4.6.2 BLOCK-PROTECTION VOLATILITY STATE (BPNV) 4.6.3 WRITE-PROTECT ENABLE (WPEN) The Write-Protect Enable (WPEN) bit is a non-volatile bit that enables the WP# pin. The Write-Protect (WP#) pin and the Write-Protect Enable (WPEN) bit control the programmable hardware write-protect feature. Setting the WP# pin to low, and the WPEN bit to ‘1’, enables Hardware write-protection. To disable Hardware write protection, set either the WP# pin to high or the WPEN bit to ‘0’. There is latency associated with writing to the WPEN bit. Poll the BUSY bit in the Status register, or wait TWPEN, for the completion of the internal, self-timed Write operation. When the chip is hardware write protected, only Write operations to Block-Protection and Configuration registers are disabled. See “Hardware Write Protection” on page 8 and Table 4-1 for more information about the functionality of the WPEN bit. The Block-Protection Volatility State bit indicates whether any block has been permanently locked with the non-Volatile Write-Lock Lock-Down register (nVWLDR). When no bits in the nVWLDR have been set (the default state from the factory) the BPNV bit is `1'; when one or more bits in the nVWLDR are set to `1' the BPNV bit will also be `0' from that point forward, even after power-up. DS20005013D-page 12  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.0 INSTRUCTIONS Instructions are used to read, write (erase and program), and configure the SST26WF016B/016BA. The complete list of the instructions is provided in Table 5-1. TABLE 5-1: Instruction DEVICE OPERATION INSTRUCTIONS FOR SST26WF016B/016BA (1 OF 2) Description Mode Command Cycle1 SPI SQI Address Cycle(s)2, 3 Dummy Cycle(s)3 Data Cycle(s)3 Max Freq 00H X X 0 0 0 104 MHz Configuration NOP No Operation RSTEN Reset Enable 66H X X 0 0 0 RST4 Reset Memory 99H X X 0 0 0 EQIO Enable Quad I/O 38H X RSTQIO5 Reset Quad I/O FFH X RDSR Read Status Register 05H X WRSR Write Status Register 01H X RDCR Read Configuration Register 35H X Read Read Memory 03H High-Speed Read Read Memory at Higher Speed 0BH SQOR6 SPI Quad Output Read SQIOR7 SPI Quad I/O Read 0 0 0 X 0 0 0 0 0 1 to  X 0 1 1 to  X 0 0 2 0 0 1 to  0 1 1 to  3 0 1 to  40 MHz 104 MHz X Read 8 X 3 3 1 to  X 3 1 1 to  6BH X 3 1 1 to  EBH X 3 3 1 to  X SPI Dual Output Read 3BH X 3 1 1 to  SDIOR9 SPI Dual I/O Read BBH X 3 1 1 to  80 MHz SB Set Burst Length C0H X X 0 0 1 RBSQI SQI nB Burst with Wrap 0CH X 3 3 n to  104 MHz RBSPI7 SPI nB Burst with Wrap ECH X 3 3 n to  JEDEC-ID Read 9FH X 0 0 3 to  Quad J-ID Quad I/O J-ID Read AFH SFDP Serial Flash Discoverable Parameters 5AH X Write Enable 06H X SDOR Identification JEDEC-ID X 0 1 3 to  3 1 1 to  0 0 0 104 MHz Write WREN X WRDI Write Disable 04H X X 0 0 0 SE10 Erase 4 KBytes of Memory Array 20H X X 3 0 0 BE11 Erase 64, 32 or 8 KBytes of Memory Array D8H X X 3 0 0 CE Erase Full Array C7H X X 0 0 0 PP Page Program 02H X X 3 0 1 to 256  2014 Microchip Technology Inc. 104 MHz DS20005013D-page 13 SST26WF016B/SST26WF016BA TABLE 5-1: DEVICE OPERATION INSTRUCTIONS FOR SST26WF016B/016BA (CONTINUED) (2 Mode Command Cycle1 SPI Instruction Description SPI Quad PP6 SQI Quad Page Program 32H X WRSU Suspends Program/ Erase B0H X WRRE Resumes Program/ Erase 30H X Read Block-Protection Register 72H X WBPR Write Block-Protection Register 42H LBPR Lock Down BlockProtection Register nVWLDR Address Cycle(s)2, 3 Dummy Cycle(s)3 Data Cycle(s)3 Max Freq 3 0 1 to 256 104 MHz X 0 0 0 X 0 0 0 SQI Protection RBPR 0 0 1 to6 X 0 1 1 to6 X X 0 0 1 to 6 8DH X X 0 0 0 non-Volatile Write Lock-Down Register E8H X X 0 0 1 to 6 ULBPR Global Block Protection Unlock 98H X X 0 0 0 RSID Read Security ID 88H X 2 1 1 to 2048 X 2 3 1 to 2048 PSID Program User Security ID area A5H X X 2 0 1 to 256 LSID Lockout Security ID Programming 85H X X 0 0 0 104 MHz Power Saving DPD Deep Power-down Mode B9H X X 0 0 0 RDPD Release from Deep Power-down and Read ID ABH X X 3 0 1 to  104 MHz 0 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. Command cycle is two clock periods in SQI mode and eight clock periods in SPI mode. Address bits above the most significant bit of each density can be VIL or VIH. Address, Dummy/Mode bits, and Data cycles are two clock periods in SQI and eight clock periods in SPI mode. RST command only executed if RSTEN command is executed first. Any intervening command will disable Reset. Device accepts eight-clock command in SPI mode, or two-clock command in SQI mode. Data cycles are two clock periods. IOC bit must be set to ‘1’ before issuing the command. Address, Dummy/Mode bits, and data cycles are two clock periods. IOC bit must be set to ‘1’ before issuing the command. Data cycles are four clock periods. Address, Dummy/Mode bits, and Data cycles are four clock periods. Sector Addresses: Use AMS - A12, remaining address are don’t care, but must be set to VIL or VIH. Blocks are 64 KByte, 32 KByte, or 8KByte, depending on location. Block Erase Address: AMS - A16 for 64 KByte; AMS - A15 for 32 KByte; AMS - A13 for 8 KByte. Remaining addresses are don’t care, but must be set to VIL or VIH. DS20005013D-page 14  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.1 No Operation (NOP) The Reset operation requires the Reset-Enable command followed by the Reset command. Any command other than the Reset command after the Reset-Enable command will disable the Reset-Enable. The No Operation command only cancels a Reset Enable command. NOP has no impact on any other command. 5.2 Once the Reset-Enable and Reset commands are successfully executed, the device returns to normal operation Read mode and then does the following: resets the protocol to SPI mode, resets the burst length to 8 Bytes, clears all the bits, except for bit 4 (WPLD) and bit 5 (SEC), in the Status register to their default states, and clears bit 1 (IOC) in the configuration register to its default state. A device reset during an active Program or Erase operation aborts the operation, which can cause the data of the targeted address range to be corrupted or lost. Depending on the prior operation, the reset timing may vary. Recovery from a Write operation requires more latency time than recovery from other operations. See Table 8-2 on page 46 for Rest timing parameters. Reset-Enable (RSTEN) and Reset (RST) The Reset operation is used as a system (software) reset that puts the device in normal operating Ready mode. This operation consists of two commands: Reset-Enable (RSTEN) followed by Reset (RST). To reset the SST26WF016B/016BA, the host drives CE# low, sends the Reset-Enable command (66H), and drives CE# high. Next, the host drives CE# low again, sends the Reset command (99H), and drives CE# high, see Figure 5-1. FIGURE 5-1: RESET SEQUENCE TCPH CE# MODE 3 MODE 3 MODE 3 MODE 0 MODE 0 MODE 0 CLK SIO(3:0) C1 C0 C3 C2 1432 F05.0 Note: C[1:0] = 66H; C[3:2] = 99H 5.3 Read (40 MHz) will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically return to the beginning (wrap-around) of the address space. The Read instruction, 03H, is supported in SPI bus protocol only with clock frequencies up to 40 MHz. This command is not supported in SQI bus protocol. The device outputs the data starting from the specified address location, then continuously streams the data output through all addresses until terminated by a lowto-high transition on CE#. The internal address pointer FIGURE 5-2: Initiate the Read instruction by executing an 8-bit command, 03H, followed by address bits A[23:0]. CE# must remain active low for the duration of the Read cycle. See Figure 5-2 for Read Sequence. READ SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 56 63 64 70 MODE 0 03 SI MSB SO ADD. MSB HIGH IMPEDANCE ADD. ADD. N DOUT MSB  2014 Microchip Technology Inc. N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT 1432 F29.0 DS20005013D-page 15 SST26WF016B/SST26WF016BA 5.4 Enable Quad I/O (EQIO) expected to be 4-bit multiplexed input/output (SQI mode) until a power cycle or a “Reset Quad I/O instruction” is executed. See Figure 5-3. The Enable Quad I/O (EQIO) instruction, 38H, enables the flash device for SQI bus operation. Upon completion of the instruction, all instructions thereafter are FIGURE 5-3: ENABLE QUAD I/O SEQUENCE CE# MODE 3 SCK 0 2 1 3 4 5 6 7 MODE 0 SIO0 38 SIO[3:1] 1432 F43.0 Note: SIO[3:1] must be driven VIH 5.5 Reset Quad I/O (RSTQIO) where it can accept new SQI command instruction. An additional RSTQIO is required to reset the device to SPI mode. The Reset Quad I/O instruction, FFH, resets the device to 1-bit SPI protocol operation or exits the Set Mode configuration during a read sequence. This command allows the flash device to return to the default I/O state (SPI) without a power cycle, and executes in either 1bit or 4-bit mode. If the device is in the Set Mode configuration, while in SQI High-Speed Read mode, the RSTQIO command will only return the device to a state FIGURE 5-4: To execute a Reset Quad I/O operation, the host drives CE# low, sends the Reset Quad I/O command cycle (FFH) then, drives CE# high. Execute the instruction in either SPI (8 clocks) or SQI (2 clocks) command cycles. For SPI, SIO[3:1] are don’t care for this command, but should be driven to VIH or VIL. See Figures 5-4 and 5-5. RESET QUAD I/O SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 FF SIO0 SIO[3:1] 25119 F73.0 Note: SIO[3:1] must be driven VIH FIGURE 5-5: RESET QUAD I/O SEQUENCE (SQI) CE# MODE 3 SCK SIO(3:0) 0 1 F F MODE 0 25119 F74.0 DS20005013D-page 16  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.6 High-Speed Read (104 MHz) Initiate High-Speed Read by executing an 8-bit command, 0BH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the High-Speed Read cycle. See Figure 5-6 for the High-Speed Read sequence for SPI bus protocol. The High-Speed Read instruction, 0BH, is supported in both SPI bus protocol and SQI protocol. On power-up, the device is set to use SPI. FIGURE 5-6: HIGH-SPEED READ SEQUENCE (SPI) (C[1:0] = 0BH) CE# MODE 3 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 56 63 64 80 71 72 SCK MODE 0 ADD. 0B SI/SIO0 ADD. ADD. X N DOUT MSB HIGH IMPEDANCE SO/SIO1 N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT 1432 F31.0 mand, 0BH, and does not require the op-code to be entered again. The host may initiate the next Read cycle by driving CE# low, then sending the four-bits input for address A[23:0], followed by the Set Mode configuration bits M[7:0], and two dummy cycles. After the two dummy cycles, the device outputs the data starting from the specified address location. There are no restrictions on address location access. In SQI protocol, the host drives CE# low then send the Read command cycle command, 0BH, followed by three address cycles, a Set Mode Configuration cycle, and two dummy cycles. Each cycle is two nibbles (clocks) long, most significant nibble first. After the dummy cycles, the device outputs data on the falling edge of the SCK signal starting from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to address location 000000H. During this operation, blocks that are Read-locked will output data 00H. When M[7:0] is any value other than AXH, the device expects the next instruction initiated to be a command instruction. To reset/exit the Set Mode configuration, execute the Reset Quad I/O command, FFH. While in the Set Mode configuration, the RSTQIO command will only return the device to a state where it can accept new SQI command instruction. An additional RSTQIO is required to reset the device to SPI mode. See Figure 5-10 for the SPI Quad I/O Mode Read sequence when M[7:0] = AXH. The Set Mode Configuration bit M[7:0] indicates if the next instruction cycle is another SQI High-Speed Read command. When M[7:0] = AXH, the device expects the next continuous instruction to be another Read com- FIGURE 5-7: HIGH-SPEED READ SEQUENCE (SQI) CE# 0 1 MODE 0 MSN LSN C0 C1 MODE 3 2 3 4 5 6 7 8 9 A5 A4 A3 A2 A1 A0 M1 M0 10 11 12 13 14 15 20 21 SCK SIO(3:0) Command Address Mode Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble Hx = High Data Nibble, Lx = Low Data Nibble C[1:0] = 0BH  2014 Microchip Technology Inc. X X X Dummy X H0 L0 Data Byte 0 H8 L8 Data Byte 7 1432 F47.0 DS20005013D-page 17 SST26WF016B/SST26WF016BA 5.7 SPI Quad-Output Read Following the dummy byte, the device outputs data from SIO[3:0] starting from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. The SPI Quad-Output Read instruction supports up to 104 MHz frequency. SST26WF016B requires the IOC bit in the configuration register to be set to ‘1’ prior to executing the command. Initiate SPI Quad-Output Read by executing an 8-bit command, 6BH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the SPI Quad Mode Read. See Figure 5-8 for the SPI Quad Output Read sequence. FIGURE 5-8: SPI QUAD OUTPUT READ CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 41 MODE 0 SIO0 6BH OP Code A[23:16] A[15:8] Address A[7:0] X b4 b0 b4 b0 Dummy Data Byte 0 Data Byte N SIO1 b5 b1 b5 b1 SIO2 b6 b2 b6 b2 SIO3 b7 b3 b7 b3 Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble DS20005013D-page 18 1432 F48.3  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.8 SPI Quad I/O Read The Set Mode Configuration bit M[7:0] indicates if the next instruction cycle is another SPI Quad I/O Read command. When M[7:0] = AXH, the device expects the next continuous instruction to be another Read command, EBH, and does not require the op-code to be entered again. The host may set the next SQIOR cycle by driving CE# low, then sending the four-bit wide input for address A[23:0], followed by the Set Mode configuration bits M[7:0], and two dummy cycles. After the two dummy cycles, the device outputs the data starting from the specified address location. There are no restrictions on address location access. The SPI Quad I/O Read (SQIOR) instruction supports up to 104 MHz frequency. SST26WF016B requires the IOC bit in the configuration register to be set to ‘1’ prior to executing the command. Initiate SQIOR by executing an 8-bit command, EBH. The device then switches to 4-bit I/O mode for address bits A[23-0], followed by the Set Mode configuration bits M[7:0], and two dummy bytes.CE# must remain active low for the duration of the SPI Quad I/O Read. See Figure 5-9 for the SPI Quad I/O Read sequence. Following the dummy bytes, the device outputs data from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. FIGURE 5-9: When M[7:0] is any value other than AXH, the device expects the next instruction initiated to be a command instruction. To reset/exit the Set Mode configuration, execute the Reset Quad I/O command, FFH. See Figure 5-10 for the SPI Quad I/O Mode Read sequence when M[7:0] = AXH. SPI QUAD I/O READ SEQUENCE CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 MODE 0 SIO0 EBH A20 A16 A12 A8 A4 A0 M4 M0 X X X X b4 b0 b4 b0 SIO1 A21 A17 A13 A9 A5 A1 M5 M1 X X X X b5 b1 b5 b1 SIO2 A22 A18 A14 A10 A6 A2 M6 M2 X X X X b6 b2 b6 b2 SIO3 A23 A19 A15 A11 A7 A3 M7 M3 X X X X b7 b3 b7 b3 MSN LSN Address Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble  2014 Microchip Technology Inc. Set Mode Dummy Data Data Byte 0 Byte 1 1432 F49.2 DS20005013D-page 19 SST26WF016B/SST26WF016BA FIGURE 5-10: BACK-TO-BACK SPI QUAD I/O READ SEQUENCES WHEN M[7:0] = AXH CE# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 SCK SIO0 b4 b0 b4 b0 A20 A16 A12 A8 A4 A0 M4 M0 X X X X b4 b0 SIO1 b5 b1 b5 b1 A21 A17 A13 A9 A5 A1 M5 M1 X X X X b5 b1 SIO2 b6 b2 b6 b2 A22 A18 A14 A10 A6 A2 M6 M2 X X X X b6 b2 MSN LSN SIO3 b7 b3 b7 b3 A23 A19 A15 A11 A7 A3 M7 M3 X X X X b7 b3 Data Data Byte Byte N+1 N Set Mode Address Dummy Data Byte 0 1432 F50.2 Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble 5.9 Set Burst sends the Set Burst command cycle (C0H) and one data cycle, then drives CE# high. After power-up or reset, the burst length is set to eight Bytes (00H). See Table 5-2 for burst length data and Figures 5-11 and 512 for the sequences. The Set Burst command specifies the number of bytes to be output during a Read Burst command before the device wraps around. It supports both SPI and SQI protocols. To set the burst length the host drives CE# low, TABLE 5-2: BURST LENGTH DATA Burst Length High Nibble (H0) Low Nibble (L0) 8 Bytes 0h 0h 16 Bytes 0h 1h 32 Bytes 0h 2h 64 Bytes 0h 3h FIGURE 5-11: SET BURST LENGTH SEQUENCE (SQI) CE# MODE 3 SCK SIO(3:0) 0 1 2 3 MODE 0 C1 C0 H0 L0 MSN LSN 1432 F32.0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = C0H DS20005013D-page 20  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA FIGURE 5-12: SET BURST LENGTH SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MODE 0 C0 SIO0 DIN SIO[3:1] 1432 F51.0 Note: SIO[3:1] must be driven VIH. 5.10 SQI Read Burst with Wrap (RBSQI) SQI Read Burst with wrap is similar to High Speed Read in SQI mode, except data will output continuously within the burst length until a low-to-high transition on CE#. To execute a SQI Read Burst operation, drive CE# low then send the Read Burst command cycle (0CH), followed by three address cycles, and then three dummy cycles. Each cycle is two nibbles (clocks) long, most significant nibble first. After the dummy cycles, the device outputs data on the falling edge of the SCK signal starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low-tohigh transition on CE#. During RBSQI, the internal address pointer automatically increments until the last byte of the burst is reached, then it wraps around to the first byte of the burst. All bursts are aligned to addresses within the burst length, see Table 5-3. For example, if the burst length is eight Bytes, and the start address is 06h, the burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern repeats until the command is terminated by a low-to-high transition on CE#. During this operation, blocks that are Read-locked will output data 00H. TABLE 5-3: 5.11 SPI Read Burst with Wrap (RBSPI) SPI Read Burst with Wrap (RBSPI) is similar to SPI Quad I/O Read except the data will output continuously within the burst length until a low-to-high transition on CE#. To execute a SPI Read Burst with Wrap operation, drive CE# low, then send the Read Burst command cycle (ECH), followed by three address cycles, and then three dummy cycles. After the dummy cycle, the device outputs data on the falling edge of the SCK signal starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low-tohigh transition on CE#. During RBSPI, the internal address pointer automatically increments until the last byte of the burst is reached, then it wraps around to the first byte of the burst. All bursts are aligned to addresses within the burst length, see Table 5-3. For example, if the burst length is eight Bytes, and the start address is 06h, the burst sequence would be: 06h, 07h, 00h, 01h, 02h, 03h, 04h, 05h, 06h, etc. The pattern repeats until the command is terminated by a low-to-high transition on CE#. During this operation, blocks that are Read-locked will output data 00H. BURST ADDRESS RANGES Burst Length Burst Address Ranges 8 Bytes 00-07H, 08-0FH, 10-17H, 18-1FH... 16 Bytes 00-0FH, 10-1FH, 20-2FH, 30-3FH... 32 Bytes 00-1FH, 20-3FH, 40-5FH, 60-7FH... 64 Bytes 00-3FH, 40-7FH, 80-BFH, C0-FFH  2014 Microchip Technology Inc. DS20005013D-page 21 SST26WF016B/SST26WF016BA 5.12 SPI Dual-Output Read Following the dummy byte, the SST26WF016B/ SST26WF016BA outputs data from SIO[1:0] starting from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. The SPI Dual-Output Read instruction supports up to 104 MHz frequency. Initiate SPI Dual-Output Read by executing an 8-bit command, 3BH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the SPI Dual-Output Read operation. See Figure 5-13 for the SPI Quad Output Read sequence. FIGURE 5-13: FAST READ, DUAL-OUTPUT SEQUENCE CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 SIO0 3BH A[23:16] A[15:8] SIO1 OP Code Note: MSB = Most Significant Bit. 5.13 39 40 41 31 32 MODE 0 SPI Dual I/O Read The SPI Dual I/O Read (SDIOR) instruction supports up to 80 MHz frequency. Initiate SDIOR by executing an 8-bit command, BBH. The device then switches to 2-bit I/O mode for address bits A[23-0], followed by the Set Mode configuration bits M[7:0]. CE# must remain active low for the duration of the SPI Dual I/O Read. See Figure 5-14 for the SPI Dual I/O Read sequence. Address A[7:0] b6 b5 b3 b1 b6 b5 b3 b1 MSB b7 b4 b2 b0 b7 b4 b2 b0 X Dummy Data Byte 0 Data Byte N 1432 F52.3 execute the Reset Quad I/O command, FFH. See Figure 5-15 for the SPI Dual I/O Read sequence when M[7:0] = AXH. Following the Set Mode configuration bits, the SST26WF016B/SST26WF016BA outputs data from the specified address location. The device continually streams data output through all addresses until terminated by a low-to-high transition on CE#. The internal address pointer automatically increments until the highest memory address is reached, at which point the address pointer returns to the beginning of the address space. The Set Mode Configuration bit M[7:0] indicates if the next instruction cycle is another SPI Dual I/O Read command. When M[7:0] = AXH, the device expects the next continuous instruction to be another SDIOR command, BBH, and does not require the op-code to be entered again. The host may set the next SDIOR cycle by driving CE# low, then sending the two-bit wide input for address A[23:0], followed by the Set Mode configuration bits M[7:0]. After the Set Mode configuration bits, the device outputs the data starting from the specified address location. There are no restrictions on address location access. When M[7:0] is any value other than AXH, the device expects the next instruction initiated to be a command instruction. To reset/exit the Set Mode configuration, DS20005013D-page 22  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA FIGURE 5-14: SPI DUAL I/O READ SEQUENCE CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 MODE 0 SIO0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 BBH SIO1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 A[23:16] A[7:0] A[15:8] M[7:0] CE#(cont’) 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 SCK(cont’) I/O Switches from Input to Output SIO0(cont’) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 MSB SIO1(cont’) MSB MSB MSB 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte 0 Byte 2 Byte 1 Byte 3 1432 F53.1 Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble FIGURE 5-15: BACK-TO-BACK SPI DUAL I/O READ SEQUENCES WHEN M[7:0] = AXH CE# MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MODE 0 SCK I/O Switch SIO0 6 4 MSB SIO1 7 5 6 4 2 0 6 4 2 0 6 4 2 0 6 4 6 4 2 0 MSB 7 5 3 1 7 5 3 1 7 5 3 1 7 5 7 5 3 1 A[23:16] A[15:8] A[7:0] M[7:0] CE#(cont’) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 SCK(cont’) I/O Switches from Input to Output SIO0(cont’) 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 MSB SIO1(cont’) MSB MSB MSB 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 Byte 0 Byte 1 Byte 2 Byte 3 1432 F54.1 Note: MSN= Most Significant Nibble, LSN = Least Significant Nibble  2014 Microchip Technology Inc. DS20005013D-page 23 SST26WF016B/SST26WF016BA 5.14 JEDEC-ID Read (SPI Protocol) Immediately following the command cycle, SST26WF016B/016BA outputs data on the falling edge of the SCK signal. The data output stream is continuous until terminated by a low-to-high transition on CE#. The device outputs three bytes of data: manufacturer, device type, and device ID, see Table 5-4. See Figure 5-16 for instruction sequence. Using traditional SPI protocol, the JEDEC-ID Read instruction identifies the device as SST26WF016B/ 016BA and the manufacturer as SST. To execute a JECEC-ID operation the host drives CE# low then sends the JEDEC-ID command cycle (9FH). TABLE 5-4: DEVICE ID DATA OUTPUT Device ID Product Manufacturer ID (Byte 1) Device Type (Byte 2) Device ID (Byte 3) SST26WF016B/ SST26WF016BA BFH 26H 51H FIGURE 5-16: JEDEC-ID SEQUENCE (SPI MODE) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 MODE 0 SI SO 9F HIGH IMPEDANCE 26 BF MSB Device ID MSB 1432 F38.0 5.15 Read Quad J-ID Read (SQI Protocol) Immediately following the command cycle, and one dummy cycle, SST26WF016B/016BA outputs data on the falling edge of the SCK signal. The data output stream is continuous until terminated by a low-to-high transition of CE#. The device outputs three bytes of data: manufacturer, device type, and device ID, see Table 5-4. See Figure 5-17 for instruction sequence. The Read Quad J-ID Read instruction identifies the device as SST26WF016B/016BA and manufacturer as SST. To execute a Quad J-ID operation the host drives CE# low and then sends the Quad J-ID command cycle (AFH). Each cycle is two nibbles (clocks) long, most significant nibble first. FIGURE 5-17: QUAD J-ID READ SEQUENCE CE# MODE 3 0 1 2 C0 C1 X 3 4 5 MSN LSN H0 L0 6 7 8 9 H2 L2 10 11 12 13 N SCK MODE 0 SIO(3:0) X Dummy BFH H1 L1 26H Device ID H0 L0 BFH H1 L1 26H HN LN N 1432 F55.0 Note: MSN = Most significant Nibble; LSN= Least Significant Nibble, C[1:0]=AFH DS20005013D-page 24  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.16 Serial Flash Discoverable Parameters (SFDP) ware support for all future Serial Flash device families. See Table 11-1 on page 55 for address and data values. The Serial Flash Discoverable Parameters (SFDP) contain information describing the characteristics of the device. This allows device-independent, JEDEC IDindependent, and forward/backward compatible soft- FIGURE 5-18: Initiate SFDP by executing an 8-bit command, 5AH, followed by address bits A[23-0] and a dummy byte. CE# must remain active low for the duration of the SFDP cycle. For the SFDP sequence, see Figure 5-18. SERIAL FLASH DISCOVERABLE PARAMETERS SEQUENCE CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 39 40 47 48 55 56 63 64 71 72 80 MODE 0 5A SI ADD. ADD. ADD. X N DOUT MSB HIGH IMPEDANCE SO N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT 1432 F56.0 5.17 Sector-Erase To execute a Sector-Erase operation, the host drives CE# low, then sends the Sector Erase command cycle (20H) and three address cycles, and then drives CE# high. Address bits [AMS:A12] (AMS = Most Significant Address) determine the sector address (SAX); the remaining address bits can be VIL or VIH. To identify the completion of the internal, self-timed, Write operation, poll the BUSY bit in the Status register, or wait TSE. See Figures 5-19 and 5-20 for the Sector-Erase sequence. The Sector-Erase instruction clears all bits in the selected 4 KByte sector to ‘1,’ but it does not change a protected memory area. Prior to any write operation, the Write-Enable (WREN) instruction must be executed. FIGURE 5-19: 4 KBYTE SECTOR-ERASE SEQUENCE– SQI MODE (C[1:0] = 20 H) CE# MODE 3 SCK 0 1 2 4 6 MODE 0 SIO(3:0) C1 C0 A5 A4 A3 A2 A1 A0 MSN LSN 1432 F07.0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0]=20H FIGURE 5-20: 4 KBYTE SECTOR-ERASE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 20 SI MSB SO 15 16 23 24 31 MODE 0 ADD. ADD. ADD. MSB HIGH IMPEDANCE 1432 F57.0  2014 Microchip Technology Inc. DS20005013D-page 25 SST26WF016B/SST26WF016BA 5.18 Block-Erase To execute a Block-Erase operation, the host drives CE# low then sends the Block-Erase command cycle (D8H), three address cycles, then drives CE# high. Address bits AMS-A13 determine the block address (BAX); the remaining address bits can be VIL or VIH. For 32 KByte blocks, A14:A13 can be VIL or VIH; for 64 KByte blocks, A15:A13 can be VIL or VIH. Poll the BUSY bit in the Status register, or wait TBE, for the completion of the internal, self-timed, Block-Erase operation. See Figures 5-21 and 5-22 for the Block-Erase sequence. The Block-Erase instruction clears all bits in the selected block to ‘1’. Block sizes can be 8 KByte, 32 KByte or 64 KByte depending on address, see Figure 3-1, Memory Map, for details. A Block-Erase instruction applied to a protected memory area will be ignored. Prior to any write operation, execute the WREN instruction. Keep CE# active low for the duration of any command sequence. FIGURE 5-21: BLOCK-ERASE SEQUENCE (SQI) CE# MODE 3 SCK 0 1 2 4 6 MODE 0 SIO(3:0) C1 C0 A5 A4 A3 A2 A1 A0 MSN LSN 1432 F08.0 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble C[1:0] = D8H FIGURE 5-22: BLOCK-ERASE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 D8 SI MSB SO 15 16 23 24 31 MODE 0 ADDR ADDR ADDR MSB HIGH IMPEDANCE 1432 F58.0 DS20005013D-page 26  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.19 Chip-Erase To execute a Chip-Erase operation, the host drives CE# low, sends the Chip-Erase command cycle (C7H), then drives CE# high. Poll the BUSY bit in the Status register, or wait TSCE, for the completion of the internal, self-timed, Write operation. See Figures 5-23 and 5-24 for the Chip Erase sequence. The Chip-Erase instruction clears all bits in the device to ‘1.’ The Chip-Erase instruction is ignored if any of the memory area is protected. Prior to any write operation, execute the WREN instruction. FIGURE 5-23: CHIP-ERASE SEQUENCE (SQI) CE# MODE 3 SCK 0 1 MODE 0 SIO(3:0) C1 C10 1432 F09.1 Note: C[1:0] = C7H FIGURE 5-24: CHIP-ERASE SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 C7 SI MSB SO HIGH IMPEDANCE 1432 F59.0  2014 Microchip Technology Inc. DS20005013D-page 27 SST26WF016B/SST26WF016BA 5.20 Page-Program partial Byte to be ignored. Poll the BUSY bit in the Status register, or wait TPP, for the completion of the internal, self-timed, Block-Erase operation. See Figures 525 and 5-26 for the Page-Program sequence. The Page-Program instruction programs up to 256 Bytes of data in the memory, and supports both SPI and SQI protocols. The data for the selected page address must be in the erased state (FFH) before initiating the Page-Program operation. A Page-Program applied to a protected memory area will be ignored. Prior to the program operation, execute the WREN instruction. When executing Page-Program, the memory range for the SST26WF016B/016BA is divided into 256 Byte page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the Page-Program instruction is not the beginning of the page boundary (A[7:0] are not all zero), and the number of bytes of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. To execute a Page-Program operation, the host drives CE# low then sends the Page Program command cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending less than a full Byte will cause the FIGURE 5-25: PAGE-PROGRAM SEQUENCE (SQI) CE# MODE 3 SCK 0 2 4 6 8 10 12 MODE 0 SIO(3:0) C1 C0 A5 A4 A3 A2 A1 A0 H0 L0 H1 L1 H2 L2 HN LN MSN LSN Data Byte 0 Data Byte 1 Data Byte 2 Data Byte 255 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble, C[1:0] = 02H FIGURE 5-26: 1432 F10.1 PAGE-PROGRAM SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 23 24 15 16 31 32 39 MODE 0 SI ADD. 02 MSB SO ADD. ADD. Data Byte 0 LSB MSB LSB MSB LSB HIGH IMPEDANCE 2079 2078 2077 2076 2075 2074 2073 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 2072 CE#(cont’) SCK(cont’) SI(cont’) Data Byte 1 MSB SO(cont’) Note: C[1:0] = 02H DS20005013D-page 28 Data Byte 255 Data Byte 2 LSB MSB LSB MSB LSB HIGH IMPEDANCE 1432 F60.1  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.21 SPI Quad Page-Program The SPI Quad Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the selected page address must be in the erased state (FFH) before initiating the SPI Quad Page-Program operation. A SPI Quad Page-Program applied to a protected memory area will be ignored. SST26WF016B requires the ICO bit in the configuration register to be set to ‘1’ prior to executing the command.Prior to the program operation, execute the WREN instruction. To execute a SPI Quad Page-Program operation, the host drives CE# low then sends the SPI Quad PageProgram command cycle (32H), three address cycles followed by the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments. The command cycle is eight clocks long, the address and data FIGURE 5-27: cycles are each two clocks long, most significant bit first. Poll the BUSY bit in the Status register, or wait TPP, for the completion of the internal, self-timed, Write operation.See Figure 5-27. When executing SPI Quad Page-Program, the memory range for the SST26WF016B/016BA is divided into 256 Byte page boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the SPI Quad PageProgram instruction is not the beginning of the page boundary (A[7:0] are not all zero), and the of bytes of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. SPI QUAD PAGE-PROGRAM SEQUENCE CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 MODE 0 32H A20A16A12 A8 A4 A0 b4 b0 b4 b0 b4 b0 SIO1 A21 A17A13 A9 A5 A1 b5 b1 b5 b1 b5 b1 SIO2 A22 A18A14A10 A6 A2 b6 b2 b6 b2 b6 b2 MSN LSN SIO3 A23 A19 A15 A11 A7 A3 b7 b3 b7 b3 b7 b3 Data Data Byte 0 Byte 1 Data Byte 255 Address 5.22 Write-Suspend and Write-Resume Write-Suspend allows the interruption of Sector-Erase, Block-Erase, SPI Quad Page-Program, or Page-Program operations in order to erase, program, or read data in another portion of memory. The original operation can be continued with the Write-Resume command. This operation is supported in both SQI and SPI protocols. Only one write operation can be suspended at a time; if an operation is already suspended, the device will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is not a valid command while a write is suspended. The WriteResume command is ignored until any write operation (Program or Erase) initiated during the Write-Suspend is complete. The device requires a minimum of 500 μs between each Write-Suspend command.  2014 Microchip Technology Inc. 5.23 Write-Suspend During SectorErase or Block-Erase Issuing a Write-Suspend instruction during SectorErase or Block-Erase allows the host to program or read any sector that was not being erased. The device will ignore any programming commands pointing to the suspended sector(s). Any attempt to read from the suspended sector(s) will output unknown data because the Sector- or Block-Erase will be incomplete. To execute a Write-Suspend operation, the host drives CE# low, sends the Write Suspend command cycle (B0H), then drives CE# high. The Status register indicates that the erase has been suspended by changing the WSE bit from ‘0’ to ‘1,’ but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the BUSY bit in the Status register or wait TWS. DS20005013D-page 29 SST26WF016B/SST26WF016BA 5.24 Write Suspend During Page Programming or SPI Quad Page Programming Issuing a Write-Suspend instruction during Page Programming allows the host to erase or read any sector that is not being programmed. Erase commands pointing to the suspended sector(s) will be ignored. Any attempt to read from the suspended page will output unknown data because the program will be incomplete. To execute a Write Suspend operation, the host drives CE# low, sends the Write Suspend command cycle (B0H), then drives CE# high. The Status register indicates that the programming has been suspended by changing the WSP bit from ‘0’ to ‘1,’ but the device will not accept another command until it is ready. To determine when the device will accept a new command, poll the BUSY bit in the Status register or wait TWS. 5.25 Write-Resume Write-Resume restarts a Write command that was suspended, and changes the suspend status bit in the Status register (WSE or WSP) back to ‘0’. To execute a Write-Resume operation, the host drives CE# low, sends the Write Resume command cycle (30H), then drives CE# high. To determine if the internal, self-timed Write operation completed, poll the BUSY bit in the Status register, or wait the specified time TSE, TBE or TPP for Sector-Erase, Block-Erase, or Page-Programming, respectively. The total write time before suspend and after resume will not exceed the uninterrupted write times TSE, TBE or TPP. 5.26 Read Security ID The Read Security ID operation is supported in both SPI and SQI modes. To execute a Read Security ID (SID) operation in SPI mode, the host drives CE# low, sends the Read Security ID command cycle (88H), two address cycles, and then one dummy cycle. To exe- TABLE 5-5: cute a Read Security ID operation in SQI mode, the host drives CE# low and then sends the Read Security ID command, two address cycles, and three dummy cycles. After the dummy cycles, the device outputs data on the falling edge of the SCK signal, starting from the specified address location. The data output stream is continuous through all SID addresses until terminated by a low-to-high transition on CE#. See Table 5-5 for the Security ID address range. 5.27 Program Security ID The Program Security ID instruction programs one to 2040 Bytes of data in the user-programmable, Security ID space. This Security ID space is one-time programmable (OTP). The device ignores a Program Security ID instruction pointing to an invalid or protected address, see Table 5-5. Prior to the program operation, execute WREN. To execute a Program SID operation, the host drives CE# low, sends the Program Security ID command cycle (A5H), two address cycles, the data to be programmed, then drives CE# high. The programmed data must be between 1 to 256 Bytes and in whole Byte increments. The device handles shifting of more than 256 Bytes of data by maintaining the last 256 Bytes of data as the correct data to be programmed. If the target address for the Program Security ID instruction is not the beginning of the page boundary, and the number of data input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap around and will be programmed at the start of that target page. The Program Security ID operation is supported in both SPI and SQI mode. To determine the completion of the internal, self-timed Program SID operation, poll the BUSY bit in the software status register, or wait TPSID for the completion of the internal self-timed Program Security ID operation. PROGRAM SECURITY ID Program Security ID Address Range Unique ID Pre-Programmed at factory 0000 – 0007H User Programmable 0008H – 07FFH 5.28 Lockout Security ID The Lockout Security ID instruction prevents any future changes to the Security ID, and is supported in both SPI and SQI modes. Prior to the operation, execute WREN. DS20005013D-page 30 To execute a Lockout SID, the host drives CE# low, sends the Lockout Security ID command cycle (85H), then drives CE# high. Poll the BUSY bit in the software status register, or wait TPSID, for the completion of the Lockout Security ID operation.  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.29 Read-Status Register (RDSR) and Read-Configuration Register (RDCR) bit before sending any new commands to assure that the new commands are properly received by the device. To Read the Status or Configuration registers, the host drives CE# low, then sends the Read-Status-Register command cycle (05H) or the Read Configuration Register command (35H). A dummy cycle is required in SQI mode. Immediately after the command cycle, the device outputs data on the falling edge of the SCK signal. The data output stream continues until terminated by a low-to-high transition on CE#. See Figures 5-28 and 5-29 for the RDSR instruction sequence. The Read-Status Register (RDSR) and Read Configuration Register (RDCR) commands output the contents of the Status and Configuration registers. These commands function in both SPI and SQI modes. The Status register may be read at any time, even during a Write operation. When a Write is in progress, poll the BUSY FIGURE 5-28: READ-STATUS-REGISTER AND READ CONFIGURATION REGISTER SEQUENCE (SQI) CE# MODE 3 0 2 4 6 8 SCK MODE 0 MSN LSN SIO(3:0) C1 C0 X X H0 L0 H0 L0 Dummy H0 L0 Status Byte Status Byte Status Byte 1432 F11.0 Note: MSN = Most Significant Nibble; LSN = Least Significant Nibble, C[1:0]=05H or 35H FIGURE 5-29: READ-STATUS-REGISTER AND READ CONFIGURATION REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 MODE 0 05 or 35H SI MSB SO HIGH IMPEDANCE Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 MSB Status or Configuration Register Out 1432 F62.1  2014 Microchip Technology Inc. DS20005013D-page 31 SST26WF016B/SST26WF016BA 5.30 Write-Status Register (WRSR) (01H), two cycles of data, and then drives CE# high. The first cycle of data points to the Status register, the second points to the Configuration register. See Figures 5-30 and 5-31. The Write-Status Register (WRSR) command writes new values to the Status register. To execute a WriteStatus Register operation, the host drives CE# low, then sends the Write-Status Register command cycle FIGURE 5-30: WRITE-STATUS-REGISTER AND WRITE CONFIGURATION REGISTER SEQUENCE (SQI) CE# MODE 3 SCK 0 3 2 1 4 5 MODE 0 MSN LSN SIO[3:0] C1 C0 H0 L0 H0 L0 Command Status Byte Configuration 1432 F63.1 Note: MSN = Most Significant Nibble; LSN = Least Significant Nibble, XX = Don’t Care, C[1:0]=01H FIGURE 5-31: WRITE-STATUS-REGISTER AND WRITE CONFIGURATION REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 MODE 3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 MODE 0 01 06 SI MSB SO MSB STATUS CONFIGURATION REGISTER REGISTER 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 MSB MSB HIGH IMPEDANCE 1432 F64.1 Note: XX = Don’t Care DS20005013D-page 32  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.31 Write-Enable (WREN) 5.32 The Write Enable (WREN) instruction sets the WriteEnable-Latch bit in the Status register to ‘1,’ allowing Write operations to occur. The WREN instruction must be executed prior to any of the following operations: Sector Erase, Block Erase, Chip Erase, Page Program, Program Security ID, Lockout Security ID, Write BlockProtection Register, Lock-Down Block-Protection Register, and Non-Volatile Write-Lock Lock-Down Register, SPI Quad Page Program, and Write Status Register. To execute a Write Enable the host drives CE# low then sends the Write Enable command cycle (06H) then drives CE# high. See Figures 5-32 and 5-33 for the WREN instruction sequence. See Figures 5-32 and 5-33 for the WREN instruction sequence. FIGURE 5-32: Write-Disable (WRDI) The Write-Disable (WRDI) instruction sets the WriteEnable-Latch bit in the Status register to ‘0,’ preventing Write operations. The WRDI instruction is ignored during any internal write operations. Any Write operation started before executing WRDI will complete. Drive CE# high before executing WRDI. To execute a Write-Disable, the host drives CE# low, sends the Write Disable command cycle (04H), then drives CE# high. See Figures 5-34 and 5-35. FIGURE 5-34: WRITE-DISABLE (WRDI) SEQUENCE (SQI) CE# MODE 3 WRITE-ENABLE SEQUENCE (SQI) SCK SIO(3:0) CE# 0 1 0 4 MODE 0 1432 F33.1 MODE 3 SCK 0 1 0 6 MODE 0 SIO[3:0] FIGURE 5-35: 1432 F12.1 WRITE-DISABLE (WRDI) SEQUENCE (SPI) CE# FIGURE 5-33: WRITE-ENABLE SEQUENCE (SPI) MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 CE# 04 SI MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 MSB SO HIGH IMPEDANCE 1432 F19.0 06 SI MSB SO HIGH IMPEDANCE 1432 F18.0  2014 Microchip Technology Inc. DS20005013D-page 33 SST26WF016B/SST26WF016BA 5.33 Read Block-Protection Register (RBPR) After the command cycle, the device outputs data on the falling edge of the SCK signal starting with the most significant nibble, see Table 5-6 for definitions of each bit in the Block-Protection register. The RBPR command does not wrap around. After all data has been output, the device will output 0H until terminated by a low-to-high transition on CE#. Figures 5-36 and 5-37. The Read Block-Protection Register instruction outputs the Block-Protection register data which determines the protection status. To execute a Read Block-Protection Register operation, the host drives CE# low, and then sends the Read Block-Protection Register command cycle (72H). A dummy cycle is required in SQI mode. FIGURE 5-36: READ BLOCK-PROTECTION REGISTER SEQUENCE (SQI) CE# MODE 3 0 2 4 6 8 10 12 SCK SIO[3:0] C1 C0 X X H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 HN LN MSN LSN BPR [m:m-7] BPR [7:0] 1432 F34.2 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble Block-Protection Register (BPR) m = 47 for SST26WF016B/016BA C[1:0]=72H FIGURE 5-37: READ BLOCK-PROTECTION REGISTER SEQUENCE (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 8 15 16 23 24 32 33 MODE 0 72H OP Code SIO Data Byte 0 Data Byte 1 Data Byte 2 Data Byte N 1432 F65.1 DS20005013D-page 34  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.34 Write Block-Protection Register (WBPR) To execute a Write Block-Protection Register operation the host drives CE# low, sends the Write Block-Protection Register command cycle (42H), sends six cycles of data, and finally drives CE# high. Data input must be most significant nibble first. See Table 5-6 for definitions of each bit in the Block-Protection register. See Figures 5-38 and 5-39. The Write Block-Protection Register (WBPR) command changes the Block-Protection register data to indicate the protection status. Execute WREN before executing WBPR. FIGURE 5-38: WRITE BLOCK-PROTECTION REGISTER SEQUENCE (SQI) CE# MODE 3 SCK 0 2 4 6 8 10 12 MODE 0 SIO(3:0) C1 C0 H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 H5 L5 HN LN MSN LSN BPR [m:m-7] BPR [7:0] 1432 F35.1 Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble Block-Protection Register (BPR) m = 47 for SST26WF016B/016BA C[1:0]=42H FIGURE 5-39: WRITE BLOCK-PROTECTION REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 MODE 0 OP Code SI 42H Data Byte0 Data Byte1 Data Byte2 Data ByteN SO 1432 F66.1 Note: C[1:0]=42H  2014 Microchip Technology Inc. DS20005013D-page 35 SST26WF016B/SST26WF016BA 5.35 Lock-Down Block-Protection Register (LBPR) FIGURE 5-40: The Lock-Down Block-Protection Register instruction prevents changes to the Block-Protection register during device operation. Lock-Down resets after power cycling; this allows the Block-Protection register to be changed. Execute WREN before initiating the LockDown Block-Protection Register instruction. CE# MODE 3 SCK 0 1 MODE 0 SIO(3:0) To execute a Lock-Down Block-Protection Register, the host drives CE# low, then sends the Lock-Down Block-Protection Register command cycle (8DH), then drives CE# high. FIGURE 5-41: LOCK-DOWN BLOCKPROTECTION REGISTER (SQI) C1 C0 1432 F30.1 Note: C[1:0]=8DH LOCK-DOWN BLOCK-PROTECTION REGISTER (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 MODE 0 8D SIO[3:1] 1432 F67.0 DS20005013D-page 36  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.36 Non-Volatile Write-Lock LockDown Register (nVWLDR) six cycles of data, and then drives CE# high. After CE# goes high, the non-volatile bits are programmed and the programming time-out must complete before any additional commands, other than Read Status Register, can be entered. Poll the BUSY bit in the Status register, or wait TPP, for the completion of the internal, self-timed, Write operation. Data inputs must be most significant bit(s) first. The Non-Volatile Write-Lock Lock-Down Register (nVWLDR) instruction controls the ability to change the Write-Lock bits in the Block-Protection register. Execute WREN before initiating the nVWLDR instruction. To execute nVWLDR, the host drives CE# low, then sends the nVWLDR command cycle (E8H), followed by FIGURE 5-42: WRITE-LOCK LOCK-DOWN REGISTER SEQUENCE (SQI) CE# MODE 3 SCK 0 2 4 6 8 10 12 MODE 0 SIO(3:0) E 8 H0 L0 H1 L1 H2 L2 H3 L3 H4 L4 H5 L5 HN LN MSN LSN nVWLDR[47:40] BPR [7:0] 1432 F36.0 Note: MSN= Most Significant Nibble; LSN = Least Significant Nibble Write-Lock Lock-Down Register (nVWLDR) FIGURE 5-43: WRITE-LOCK LOCK-DOWN REGISTER SEQUENCE (SPI) CE# MODE 3 SCK 0 1 2 3 4 5 6 7 8 15 16 23 24 31 32 MODE 0 OP Code SI E8H Data Byte0 Data Byte1 Data Byte2 Data ByteN SO 1432 F69.1  2014 Microchip Technology Inc. DS20005013D-page 37 SST26WF016B/SST26WF016BA 5.37 Global Block-Protection Unlock (ULBPR) FIGURE 5-44: The Global Block-Protection Unlock (ULBPR) instruction clears all write-protection bits in the Block-Protection register, except for those bits that have been locked down with the nVWLDR command. Execute WREN before initiating the ULBPR instruction. CE# MODE 3 SCK To execute a ULBPR instruction, the host drives CE# low, then sends the ULBPR command cycle (98H), and then drives CE# high. FIGURE 5-45: GLOBAL BLOCKPROTECTION UNLOCK (SQI) 0 1 MODE 0 SIO(3:0) C1 C0 1432 F20.1 Note: C[1:0]=98H GLOBAL BLOCK-PROTECTION UNLOCK (SPI) CE# MODE 3 SCK SIO0 0 1 2 3 4 5 6 7 MODE 0 98 SIO[3:1] 1432 F68.0 DS20005013D-page 38  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA TABLE 5-6: BLOCK-PROTECTION REGISTER FOR SST26WF016B/SST26WF016BA 1 BPR Bits Read Lock Write Lock/nVWLDR2 Address Range Protected Block Size 47 46 1FE000H - 1FFFFFH 8 KByte 45 44 1FC000H - 1FDFFFH 8 KByte 43 42 1FA000H - 1FBFFFH 8 KByte 41 40 1F8000H - 1F9FFFH 8 KByte 39 38 006000H - 007FFFH 8 KByte 37 36 004000H - 005FFFH 8 KByte 35 34 002000H - 003FFFH 8 KByte 33 32 000000H - 001FFFH 8 KByte 31 1F0000H - 1F7FFFH 32 KByte 30 008000H - 00FFFFH 32 KByte 29 1E0000H - 1EFFFFH 64 KByte 28 1D0000H -1DFFFFH 64 KByte 27 1C0000H -1CFFFFH 64 KByte 26 1B0000H - 1BFFFFH 64 KByte 25 1A0000H - 1AFFFFH 64 KByte 24 190000H - 19FFFFH 64 KByte 23 180000H - 18FFFFH 64 KByte 22 170000H - 17FFFFH 64 KByte 21 160000H - 16FFFFH 64 KByte 20 150000H - 15FFFFH 64 KByte 19 140000H - 14FFFFH 64 KByte 18 130000H - 13FFFFH 64 KByte 17 120000H - 12FFFFH 64 KByte 16 110000H - 11FFFFH 64 KByte 15 100000H - 10FFFFH 64 KByte 14 0F0000H - 0FFFFFH 64 KByte 13 0E0000H - 0EFFFFH 64 KByte 12 0D0000H - 0DFFFFH 64 KByte 11 0C0000H - 0CFFFFH 64 KByte 10 0B0000H - 0BFFFFH 64 KByte 9 0A0000H - 0AFFFFH 64 KByte 8 090000H - 09FFFFH 64 KByte 7 080000H - 08FFFFH 64 KByte 6 070000H - 07FFFFH 64 KByte 5 060000H - 06FFFFH 64 KByte 4 050000H - 05FFFFH 64 KByte 3 040000H - 04FFFFH 64 KByte 2 030000H - 03FFFFH 64 KByte 1 020000H - 02FFFFH 64 KByte 0 010000H - 01FFFFH 64 KByte 1. The default state after a power-on reset is write-protected BPR[47:0] = 5555 FFFF FFFF 2. nVWLDR bits are one-time-programmable. Once a WLLDR bit is set, the protection state of that particular block is permanently write-locked.  2014 Microchip Technology Inc. DS20005013D-page 39 SST26WF016B/SST26WF016BA 5.38 Deep Power-Down Enter Deep Power-down mode by initiating the Deep Power-down (DPD) instruction (B9H) while driving CE# low. CE# must be driven high before executing the DPD instruction. After CE# is driven high, it requires a delay of TDPD before the standby current ISB is reduced to deep power-down current IDPD. See Table 5-7 for Deep Power-down timing. If the device is busy performing an internal erase or program operation, initiating a Deep Power-down instruction will not placed the device in Deep Power-down mode. See Figures 5-46 and 5-47 for the DPD instruction sequence. The Deep Power-down (DPD) instruction puts the device in the lowest power consumption mode–the Deep Power-down mode. The Deep Power-down instruction is ignored during an internal write operation. While the device is in Deep Power-down mode, all instructions will be ignored except for the Release Deep Power-down instruction. TABLE 5-7: Symbol DEEP POWER-DOWN Parameter Min Max Units TDPD CE# High to Deep Power-down 3 µs TSBR CE# High to Standby Mode 10 µs FIGURE 5-46: DEEP POWER-DOWN (DPD) SEQUENCE (SQI) CE# TDPD MODE 3 SCK 1 0 MODE 0 B 9 MSN LSN SIO(3:0) Standby Mode Deep Power-Down Mode 1432 F100.0 Note: MSN= Most Significant Nibble; LSN = Least Significant Nibble FIGURE 5-47: DEEP POWER-DOWN (DPD) (SPI) CE# TDPD MODE 3 SCK 0 1 2 3 4 5 6 7 MODE 0 B9 SI MSB SO HIGH IMPEDANCE Standby Mode Deep Power-Down Mode 1432 F101.0 DS20005013D-page 40  2014 Microchip Technology Inc. SST26WF016B/SST26WF016BA 5.39 Release from Deep Power-Down and Read ID To execute RDPD and read the Device ID, the host drives CE# low then sends the Deep Power-Down command cycle (ABH), three dummy clock cycles, and then drives CE# high. The device outputs the Device ID on the falling edge of the SCK signal following the dummy cycles. The data output stream is continuous until terminated by a low-to-high transition on CE, and will return to Standby mode and be ready for the next instruction after TSBR. See Figures 5-48 and 5-49 for the command sequence. Release from Deep Power-Down (RDPD) and Read ID instruction exits Deep Power-down mode. To exit Deep Power down mode, execute the RDPD. During this command, the host drives CE# low, then sends the Deep Power-Down command cycle (ABH), and then drives CE# high. The device will return to Standby mode and be ready for the next instruction after TSBR. FIGURE 5-48: RELEASE FROM DEEP POWER-DOWN (RDPD) AND READ ID SEQUENCE (SQI) TSBR CE# MODE 3 1 0 SCK MODE 0 Op Code SIO[3:0] C1 C0 MSN LSN X X X X X X D1 D0 Device ID Deep Power-Down Mode Standby Mode 1432 F102.0 Note: C[1:0]=ABH FIGURE 5-49: RELEASE FROM DEEP POWER-DOWN (RDPD) AND READ ID SEQUENCE (SPI) TSBR CE# MODE 3 0 1 2 3 4 5 6 7 8 15 16 23 24 32 33 40 SCK MODE 0 Op Code SIO[3:0] AB XX XX XX Device ID Deep Power-Down Mode Standby Mode 1432 F103.0  2014 Microchip Technology Inc. DS20005013D-page 41 SST26WF016B/SST26WF016BA 6.0 ELECTRICAL SPECIFICATIONS Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (