SST39SF040-70-4C-NHE

1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A / SST39SF020A / SST39SF040 write (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories Features • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations • Superior Reliability • Fast Erase and Byte-Program – Sector-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39SF010A 4 seconds (typical) for SST39SF020A 8 seconds (typical) for SST39SF040 – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 10 mA (typical) – Standby Current: 30 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 55 ns – 70 ns • Latched Address and Data • Automatic Write Timing – Internal VPP Generation ©2002-2016 • End-of-Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 32-lead PLCC – 32-lead TSOP (8mm x 14mm) – 32-pin PDIP • All devices are RoHS compliant www.microchip.com DS20005022C 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Product Description The SST39SF010A/020A/040 are CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A/020A/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A/020A/040 devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF010A/020A/040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39SF010A/020A/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39SF010A/020A/040 are offered in 32-lead PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available. See Figures 2, 3, and 4 for pin assignments. ©2002-2016 DS20005022C 2 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Block Diagram X-Decoder Memory Address SuperFlash Memory Address Buffers & Latches Y-Decoder CE# OE# Control Logic I/O Buffers and Data Latches WE# DQ7 - DQ0 1147 B1.2 Figure 1: Functional Block Diagram ©2002-2016 DS20005022C 3 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet A4 A3 A17 WE# VDD A18 A16 A15 A12 A17 A4 WE# A5 NC A5 WE# A5 VDD 6 VDD A6 NC A6 A16 A6 NC 5 A16 A7 A15 A7 A15 A7 A12 SST39SF020A SST39SF010A SST39SF040 SST39SF020A SST39SF010A A12 SST39SF040 Pin Assignment 4 3 2 1 32 31 30 29 SST39SF010A SST39SF020A SST39SF040 A14 A14 28 A13 A13 A13 7 27 A8 A8 A8 A4 8 26 A9 A9 A9 A3 A3 9 25 A11 A11 A11 A2 A2 A2 10 24 OE# OE# OE# A1 A1 A1 11 23 A10 A10 A10 A0 A0 A0 12 22 CE# CE# CE# DQ0 DQ0 DQ0 13 21 14 15 16 17 18 19 20 DQ7 DQ7 DQ7 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6 DQ2 VSS DQ3 DQ4 DQ5 DQ6 32-lead PLCC Top View DQ1 SST39SF040 SST39SF020A SST39SF010A A14 1147 32-plcc P2.4 Figure 2: Pin Assignments for 32-lead PLCC ©2002-2016 DS20005022C 4 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet SST39SF040 SST39SF020A A11 A9 A8 A13 A14 A17 WE# VDD A18 A16 A15 A12 A7 A6 A5 A4 A11 A9 A8 A13 A14 A17 WE# VDD NC A16 A15 A12 A7 A6 A5 A4 SST39SF010A A11 A9 A8 A13 A14 NC WE# VDD NC A16 A15 A12 A7 A6 A5 A4 SST39SF010A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Standard Pinout Top View Die Up SST39SF020A OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 SST39SF040 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 1147 32-tsop P1.1 Figure 3: Pin Assignments for 32-lead TSOP (8mm x 14mm) SST39SF040 SST39SF020A SST39SF010A A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 32-pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16 SST39SF010A SST39SF020A 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VDD WE# NC A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VDD WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 SST39SF040 VDD WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 1147 32-pdip P3.2 Figure 4: Pin Assignments for 32-pin PDIP ©2002-2016 DS20005022C 5 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Table 1: Pin Description Symbol Pin Name Functions AMS1-A0 Address Inputs To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the sector. DQ7-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a Write cycle. The outputs are in tri-state when OE# or CE# is high. CE# Chip Enable To activate the device when CE# is low. OE# Output Enable To gate the data output buffers. WE# Write Enable To control the Write operations. VDD Power Supply To provide 5.0V supply (4.5-5.5V) VSS Ground NC No Connection Unconnected pins. T1.2 25022 1. AMS = Most significant address AMS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040 ©2002-2016 DS20005022C 6 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the SST39SF010A/020A/040 is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram (Figure 5) for further details. Byte-Program Operation The SST39SF010A/020A/040 are programmed on a byte-by-byte basis. Before programming, the sector where the byte exists must be fully erased. The Program operation is accomplished in three steps. The first step is the three-byte load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte-Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 6 and 7 for WE# and CE# controlled Program operation timing diagrams and Figure 16 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Sector-Erase Operation The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The sector address is latched on the falling edge of the sixth WE# pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 10 for timing waveforms. Any commands written during the Sector-Erase operation will be ignored. Chip-Erase Operation The SST39SF010A/020A/040 provide Chip-Erase operation, which allows the user to erase the entire memory array to the “1s” state. This is useful when the entire device must be quickly erased. The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 11 for timing diagram, and Figure 19 for the flowchart. Any commands written during the Chip-Erase operation will be ignored. ©2002-2016 DS20005022C 7 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Write Operation Status Detection The SST39SF010A/020A/040 provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or Erase operation. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Data# Polling (DQ7) When the SST39SF010A/020A/040 are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 8 for Data# Polling timing diagram and Figure 17 for a flowchart. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0s and 1s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector- or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 9 for Toggle Bit timing diagram and Figure 17 for a flowchart. Data Protection The SST39SF010A/020A/040 provide both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 2.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. ©2002-2016 DS20005022C 8 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Software Data Protection (SDP) The SST39SF010A/020A/040 provide the JEDEC approved Software Data Protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte load sequence. The SST39SF010A/020A/040 devices are shipped with the Software Data Protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode, within TRC. Product Identification The Product Identification mode identifies the device as the SST39SF040, SST39SF010A, or SST39SF020A and manufacturer as SST. This mode may be accessed by software operations. Users may wish to use the software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, Table 4 for software operation, Figure 12 for the software ID entry and read timing diagram and Figure 18 for the ID entry command sequence flowchart. Table 2: Product Identification Manufacturer’s ID Address Data 0000H BFH 0001H B5H Device ID SST39SF010A SST39SF020A 0001H B6H SST39SF040 0001H B7H T2.2 25022 Product Identification Mode Exit/Reset In order to return to the standard Read mode, the Software Product Identification mode must be exited. Exit is accomplished by issuing the Exit ID command sequence, which returns the device to the Read operation. Please note that the software reset command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 13 for timing waveform and Figure 18 for a flowchart. ©2002-2016 DS20005022C 9 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Operations Table 3: Operation Modes Selection Mode CE# OE# WE# DQ Address Read VIL VIL VIH DOUT AIN Program VIL VIH VIL DIN AIN X1 Sector address, XXH for Chip-Erase High Z X Erase VIL VIH VIL Standby VIH X X X VIL X High Z/ DOUT X X X VIH High Z/ DOUT X VIL VIL VIH Write Inhibit Product Identification Software Mode See Table 4 T3.3 25022 1. X can be VIL or VIH, but no other value. Table 4: Software Command Sequence Command Sequence 1st Bus Write Cycle 2nd Bus Write Cycle 3rd Bus Write Cycle 4th Bus Write Cycle 5th Bus Write Cycle 6th Bus Write Cycle Addr1 Addr1 Addr1 Data Addr1 Data Addr1 Data Addr1 Data BA2 Data Data Data Byte-Program 5555H AAH 2AAAH 55H 5555H A0H Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX3 30H Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H 5555H AAH 2AAAH 55H 5555H 90H 55H 5555H F0H Software ID Entry4,5 Software ID Exit6 Software ID Exit6 XXH F0H 5555H AAH 2AAAH T4.2 25022 1. Address format A14-A0 (Hex), Addresses AMS-A15 can be VIL or VIH, but no other value, for the Command sequence. AMS = Most significant address AMS = A16 for SST39SF010A, A17 for SST39SF020A, and A18 for SST39SF040 2. BA = Program Byte address 3. SAX for Sector-Erase; uses AMS-A12 address lines 4. The device does not remain in Software Product ID mode if powered down. 5. With AMS-A1 = 0; SST Manufacturer’s ID = BFH, is read with A0 = 0, SST39SF010A Device ID = B5H, is read with A0 = 1 SST39SF020A Device ID = B6H, is read with A0 = 1 SST39SF040 Device ID = B7H, is read with A0 = 1 6. Both Software ID Exit operations are equivalent ©2002-2016 DS20005022C 10 04/16 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (