8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
The SST49LF008A flash memory devices are designed to be read-compatible
with the Intel® 82802 Firmware Hub (FWH) device for PC-BIOS application.
These devices provide protection for the storage and update of code and data in
addition to adding system design flexibility through five general purpose inputs.
Two interface modes are supported by the SST49LF008A: Firmware Hub (FWH)
Interface mode for in-system programming and Parallel Programming (PP) mode
for fast factory programming of PC-BIOS applications.
Features
• Firmware Hub for Intel 8xx Chipsets
• Two Operational Modes
• 8 Mbit SuperFlash memory array for code/data
storage
– 1024K x8
• Flexible Erase Capability
– Uniform 4 KByte Sectors
– Uniform 64 KByte overlay blocks
– 64 KByte Top Boot Block protection
– Chip-Erase for PP Mode Only
• Single 3.0-3.6V Read and Write Operations
• Superior Reliability
– Endurance:100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Read Current: 6 mA (typical)
– Standby Current: 10 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time: 15 seconds (typical)
– Single-pulse Program or Erase
– Internal timing generation
– Firmware Hub Interface (FWH) Mode for
In-System operation
– Parallel Programming (PP) Mode for fast
production programming
• Firmware Hub Hardware Interface Mode
– 5-signal communication interface supporting byte Read
and Write
– 33 MHz clock frequency operation
– WP# and TBL# pins provide hardware write
protect for entire chip and/or top Boot Block
– Block Locking Register for all blocks
– Standard SDP Command Set
– Data# Polling and Toggle Bit for End-of-Writedetection
– 5 GPI pins for system design flexibility
– 4 ID pins for multi-chip selection
• Parallel Programming (PP) Mode
– 11-pin multiplexed address and
8-pin data I/O interface
– Supports fast In-System or PROM programming for
manufacturing
• CMOS and PCI I/O Compatibility
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 40-lead TSOP (10mm x 20mm)
– Non-Pb (lead-free) packages available
• All non-Pb (lead-free) devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25085A
10/11
8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Product Description
The SST49LF008A flash memory devices are designed to be read-compatible with the Intel® 82802
Firmware Hub (FWH) device for PC-BIOS application. These devices provide protection for the storage
and update of code and data in addition to adding system design flexibility through five general purpose inputs. Two interface modes are supported by the SST49LF008A: Firmware Hub (FWH) Interface
mode for in-system programming and Parallel Programming (PP) mode for fast factory programming of
PC-BIOS applications.
The SST49LF008A flash memory devices are manufactured with SST’s proprietary, high performance
SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST49LF008A devices significantly improve performance and reliability, while lowering power consumption.
The SST49LF008A devices write (Program or Erase) with a single 3.0-3.6V power supply. They use
less energy during Erase and Program than alternative flash memory technologies. The total energy
consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter Erase time, the
total energy consumed during any Erase or Program operation is less than alternative flash memory
technologies. The SST49LF008A products provide a maximum Byte-Program time of 20 µsec. The
entire memory can be erased and programmed byte-by-byte typically in 15 seconds when using status
detection features such as Toggle Bit or Data# Polling to indicate the completion of Program operation.
The SuperFlash technology provides fixed Erase and Program times independent of the number of
Erase/Program cycles performed. Therefore the system software or hardware does not have to be calibrated or correlated to the cumulated number of Erase/Program cycles as is necessary with alternative flash memory technologies, whose Erase and Program time increase with accumulated Erase/
Program cycles.
To protect against inadvertent write, the SST49LF008A devices employ hardware and software data
(SDP) protection schemes. It is offered with typical endurance of 100,000 cycles. Data retention is
rated at greater than 100 years.
To meet high density, surface mount requirements, the SST49LF008A devices are offered in a 32-lead
TSOP package. In addition, the SST49LF008A is offered in 32-lead PLCC and 40-lead TSOP packages. See Figures 2, 3, and 4 for pin assignments and Table 1 for pin descriptions.
©2011 Silicon Storage Technology, Inc.
DS25085A
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Functional Block Diagram
TBL#
WP#
INIT#
X-Decoder
SuperFlash
Memory
FWH[3:0]
CLK
FWH4
FWH
Interface
Address Buffers Latches
Y-Decoder
ID[3:0]
FGPI[4:0]
R/C#
A[10:0]
DQ[7:0]
Control Logic
I/O Buffers and Data Latches
Programmer
Interface
OE#
WE#
IC
RST#
1161 B1.2
Figure 1: Functional Block Diagram
©2011 Silicon Storage Technology, Inc.
DS25085A
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Pin Assignments
NC
NC
NC
VSS (VSS)
IC (IC)
A10 (FGPI4)
R/C# (CLK)
VDD (VDD)
NC
RST# (RST#)
A9 (FGPI3)
A8 (FGPI2)
A7 (FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Standard Pinout
Top View
Die Up
OE# (INIT#)
WE# (FWH4)
VDD (VDD)
DQ7 (RES)
DQ6 (RES)
DQ5 (RES)
DQ4 (RES)
DQ3 (FWH3)
VSS (VSS)
DQ2 (FWH2)
DQ1 (FWH1)
DQ0 (FWH0)
A0 (ID0)
A1 (ID1)
A2 (ID2)
A3 (ID3)
1161 32-tsop P1.0
( ) Designates FWH Mode
NC
2
1
A10 (FGPI4)
RST# (RST#)
3
R/C# (CLK)
A9 (FGPI3)
4
VDD (VDD)
A8 (FGPI2)
Figure 2: Pin Assignments for 32-lead TSOP (8mm x 14mm)
32 31 30
29
5
A6 (FGPI0)
6
28
VSS (VSS)
A5 (WP#)
7
27
NC
A4 (TBL#)
8
26
NC
A3 (ID3)
9
25
VDD (VDD)
A2 (ID2)
10
24
OE# (INIT#)
A1 (ID1)
11
23
WE# (FWH4)
A0 (ID0)
12
22
NC
DQ0 (FWH0)
13
21
14 15 16 17 18 19 20
DQ5 (RES)
DQ4 (RES)
DQ3 (FWH3)
VSS (VSS)
DQ2 (FWH2)
DQ1 (FWH1)
( ) Designates FWH Mode
32-lead PLCC
Top View
DQ6 (RES)
A7(FGPI1)
IC (IC)
DQ7 (RES)
1161 32-plcc P2.3
Figure 3: Pin Assignments for 32-lead PLCC
©2011 Silicon Storage Technology, Inc.
DS25085A
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10/11
8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
NC (NC)
IC (IC)
NC (NC)
NC (NC)
NC (NC)
NC (NC)
A10 (FGPI4)
NC (NC)
R/C# (CLK)
VDD
NC (NC)
RST# (RST#)
NC (NC)
NC (NC)
A9 (FGPI3)
A8 (FGPI2)
A7 (FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Standard Pinout
Top View
Die Up
( ) Designates FWH Mode
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VSS
VDD
(FWH4) WE#
(INIT#) OE#
(NC) NC
(RES) DQ7
(RES) DQ6
(RES) DQ5
(RES) DQ4
(NC) NC
VSS
VSS
(FWH3) DQ3
(FWH2) DQ2
(FWH1) DQ1
(FWH0) DQ0
(ID0) A0
(ID1) A1
(ID2) A2
(ID3) A3
1232 40-tsop P1.0
Figure 4: Pin Assignments for 40-lead TSOP
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DS25085A
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Table 1: Pin Description
Interface
Symbol
A10-A0
Pin Name
Address
DQ7-DQ0 Data
Type1 PP FWH Functions
I
X
Inputs for low-order addresses during Read and Write operations. Addresses are internally latched during a Write cycle. For
the programming interface, these addresses are latched by R/
C# and share the same pins as the high-order address inputs.
I/O
X
X
X
X
X
To output data during Read cycles and receive input data during
Write cycles. Data is internally latched during a Write cycle. The
outputs are in tri-state when OE# is high.
To gate the data output buffers
To control the Write operations
This pin determines which interface is operational. When held
high, programmer mode is enabled and when held low, FWH
mode is enabled. This pin must be setup at power-up or before
return from reset and not change during device operation. This pin
is internally pulled- down with a resistor between 20-100 K
This is the second reset pin for in-system use. This pin is internally combined with the RST# pin; If this pin or RST# pin is
driven low, identical operation is exhibited.
These four pins are part of the mechanism that allows multiple
parts to be attached to the same bus. The strapping of these
pins is used to identify the component.The boot device must
have ID[3:0]=0000 and it is recommended that all subsequent
devices should use sequential up-count strapping. These pins
are internally pulled-down with a resistor between 20-100 K
These individual inputs can be used for additional board flexibility. The state of these pins can be read through GPI_REG register. These inputs should be at their desired state before the start
of the PCI clock cycle during which the read is attempted, and
should remain in place until the end of the Read cycle. Unused
GPI pins must not be floated.
When low, prevents programming to the Boot Block sectors at top of
memory. When TBL# is high it disables hardware write protection for
the top block sectors. This pin cannot be left unconnected.
I/O Communications
To provide a clock input to the control unit
Input Communications
To reset the operation of the device
When low, prevents programming to all but the highest addressable blocks. When WP# is high it disables hardware write protection for these blocks. This pin cannot be left unconnected.
Select For the Programming interface, this pin determines whether
the address pins are pointing to the row addresses, or to the column
addresses.
These pins must be left unconnected.
X
X
X
To provide power supply (3.0-3.6V)
Circuit ground (OV reference) All VSS pins must be grounded.
Unconnected pins
OE#
WE#
IC
Output Enable
Write Enable
Interface
Configuration
Pin
I
I
I
INIT#
Initialize
I
X
ID[3:0]
Identification
Inputs
I
X
FGPI[4:0] General Purpose Inputs
I
X
TBL#
Top Block Lock
I
X
FWH[3:0]
CLK
FWH4
RST#
WP#
FWH I/Os
Clock
FWH Input
Reset
Write Protect
I/O
I
I
I
I
X
X
X
X
X
R/C#
Row/Column
Select
I
X
PWR
PWR
I
X
X
X
RES
VDD
VSS
NC
X
X
Reserved
Power Supply
Ground
No Connection
T1.4 25085
1. I = Input, O = Output
©2011 Silicon Storage Technology, Inc.
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Device Memory Map
0FFFFFH
Block 15
TBL#
Boot Block
0F0000H
0EFFFFH
Block 14
0E0000H
0DFFFFH
Block 13
0D0000H
0CFFFFH
Block 12
0C0000H
0BFFFFH
Block 11
0B0000H
0AFFFFH
Block 10
0A0000H
09FFFFH
Block 9
090000H
08FFFFH
Block 8
WP# for
Block 0 14
080000H
07FFFFH
Block 7
070000H
06FFFFH
Block 6
060000H
05FFFFH
Block 5
050000H
04FFFFH
Block 4
040000H
03FFFFH
Block 3
030000H
02FFFFH
Block 2
020000H
01FFFFH
Block 1
Block 0
(64 KByte)
010000H
00FFFFH
4 KByte Sector 15
002000H
4 KByte Sector 2
001000H
4 KByte Sector 1
000000H
4 KByte Sector 0
1161 F08.0
Figure 5: Device Memory Map for SST49LF008A
©2011 Silicon Storage Technology, Inc.
DS25085A
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Design Considerations
SST recommends a high frequency 0.1 µF ceramic capacitor to be placed as close as possible
between VDD and VSS less than 1 cm away from the VDD pin of the device. Additionally, a low frequency 4.7 µF electrolytic capacitor from VDD to VSS should be placed within 1 cm of the VDD pin. If you
use a socket for programming purposes add an additional 1-10 µF next to each socket.
The RST# pin must remain stable at VIH for the entire duration of an Erase operation. WP# must
remain stable at VIH for the entire duration of the Erase and Program operations for non-Boot Block
sectors. To write data to the top Boot Block sectors, the TBL# pin must also remain stable at VIH for the
entire duration of the Erase and Program operations.
Product Identification
The product identification mode identifies the device as the SST49LF008A and manufacturer as SST.
Table 2: Product Identification
Manufacturer’s ID
Byte
Data
JEDEC ID
Address
Location
0000H
BFH
FFBC0000H
0001H
5AH
FFBC0001H
Device ID
SST49LF008A
T2.7 25085
Mode Selection
The SST49LF008A flash memory devices can operate in two distinct interface modes: the Firmware
Hub Interface (FWH) mode and the Parallel Programming (PP) mode. The IC (Interface Configuration
pin) is used to set the interface mode selection. If the IC pin is set to logic High, the device is in PP
mode; while if the IC pin is set Low, the device is in the FWH mode. The IC selection pin must be configured prior to device operation. The IC pin is internally pulled down if the pin is not connected. In
FWH mode, the device is configured to interface with its host using Intel’s Firmware Hub proprietary
protocol. Communication between Host and the SST49LF008A occurs via the 4-bit I/O communication
signals, FWH [3:0] and the FWH4. In PP mode, the device is programmed via an 11-bit address and
an 8-bit data I/O parallel signals. The address inputs are multiplexed in row and column selected by
control signal R/C# pin. The column addresses are mapped to the higher internal addresses, and the
row addresses are mapped to the lower internal addresses. See the Device Memory Map in Figure 5
for address assignments.
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Firmware Hub (FWH) Mode
Device Operation
The FWH mode uses a 5-signal communication interface, FWH[3:0] and FWH4, to control operations
of the SST49LF008A. Operations such as Memory Read and Memory Write uses Intel FWH propriety
protocol. JEDEC Standard SDP (Software Data Protection) Byte-Program, Sector-Erase and BlockErase command sequences are incorporated into the FWH memory cycles. Chip-Erase is only available in PP Mode.
The device enters standby mode when FWH4 is high and no internal operation is in progress. The
device is in ready mode when FWH4 is low and no activity is on the FWH bus.
Firmware Hub Interface Cycles
Addresses and data are transferred to and from the SST49LF008A by a series of “fields,” where each
field contains 4 bits of data. SST49LF008A supports only single-byte Read and Write, and all fields are
one clock cycle in length. Field sequences and contents are strictly defined for Read and Write operations. Addresses in this section refer to addresses as seen from the SST49LF008A’s “point of view,”
some calculation will be required to translate these to the actual locations in the memory map (and
vice versa) if multiple memory devices are used on the bus. Tables 3 and 4 list the field sequences for
Read and Write cycles.
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Table 3: FWH Read Cycle
Clock
Cycle
Field
Name
Field Contents FWH[3:0]
FWH[3:0]1
Direction Comments
1
START
1101
IN
FWH4 must be active (low) for the part to respond. Only the
last start field (before FWH4 transitions high) should be recognized. The START field contents indicate a FWH memory
Read cycle.
2
IDSEL
0000 to 1111
IN
Indicates which FWH device should respond. If the to IDSEL (ID
select) field matches the value ID[3:0], then that particular device will
respond to the whole bus cycle.
3-9
IMADDR
YYYY
IN
These seven clock cycles make up the 28-bit memory address.
YYYY is one nibble of the entire address. Addresses are transferred most-significant nibble first.
10
IMSIZE
0000 (1 byte)
IN
A field of this size indicates how many bytes will be or transferred during multi-byte operations. The SST49LF008A will only
support single-byte operation. IMSIZE=0000b
11
TAR0
1111
IN
In this clock cycle, the master (Intel ICH) has driven the bus
then Float then float to all ‘1’s and then floats the bus, prior to the next
clock cycle. This is the first part of the bus “turnaround cycle.”
12
TAR1
1111 (float)
Float
The SST49LF008A takes control of the bus during this cycle.
then OUT During the next clock cycle, it will be driving “sync data.”
13
RSYNC
0000 (READY)
OUT
During this clock cycle, the FWH will generate a “ready-sync”
(RSYNC) indicating that the least-significant nibble of the leastsignificant byte will be available during the next clock cycle.
14
DATA
YYYY
OUT
YYYY is the least-significant nibble of the least-significant data byte.
15
DATA
YYYY
OUT
YYYY is the most-significant nibble of the least-significant data byte.
16
TAR0
1111
OUT
In this clock cycle, the SST49LF008A has driven the bus to all
then Float ones and then floats the bus prior to the next clock cycle. This
is the first part of the bus “turnaround cycle.”
17
TAR1
1111 (float)
Float then The master (Intel ICH) resumes control of the bus during this
IN
cycle.
T3.3 25085
1. Field contents are valid on the rising edge of the present clock cycle.
CLK
FWH4
FWH[3:0]
STR
IDS
IMADDR
IMS
TAR
RSYNC
DATA
TAR
1161 F09.0
Figure 6: Single-Byte Read Waveforms
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Table 4: FWH Write Cycle
Clock
Cycle
Field
Name
Field Contents
FWH[3:0]1
FWH[3:0]
Direction
1
START
1110
IN
FWH4 must be active (low) for the part to respond. Only
the last start field (before FWH4 transitions high) should
be recognized. The START field contents indicate a FWH
memory Read cycle.
2
IDSEL
0000 to 1111
IN
Indicates which SST49LF008A device should respond.
If the IDSEL (ID select) field matches the value
ID[3:0], then that particular device will respond to the
whole bus cycle.
3-9
IMADDR
YYYY
IN
These seven clock cycles make up the 28-bit memory
address. YYYY is one nibble of the entire address.
Addresses are transferred most-significant nibble first.
10
IMSIZE
0000 (1 byte)
IN
This size field indicates how many bytes will be transferred during multi-byte operations. The FWH only
supports single-byte writes. IMSIZE=0000b
11
DATA
YYYY
IN
This field is the least-significant nibble of the data byte.
This data is either the data to be programmed into the
flash memory or any valid flash command.
12
DATA
YYYY
IN
13
TAR0
1111
IN then Float
14
TAR1
1111 (float)
15
RSYNC
0000
OUT
16
TAR0
1111
OUT then Float
In this clock cycle, the SST49LF008A has driven the bus
to all then float ‘1’s and then floats the bus prior to the
next clock cycle. This is the first part of the bus “turnaround cycle.”
17
TAR1
1111 (float)
Float then IN
The master (Intel ICH) resumes control of the bus during this
cycle.
Comments
This field is the most-significant nibble of the data byte.
In this clock cycle, the master (Intel ICH) has driven the
then float bus to all ‘1’s and then floats the bus prior to
the next clock cycle. This is the first part of the bus “turnaround cycle.”
Float then OUT The SST49LF008A takes control of the bus during this
cycle. During the next clock cycle it will be driving the
“sync” data.
The SST49LF008A outputs the values 0000, indicating
that it has received data or a flash command.
T4.4 25085
1. Field contents are valid on the rising edge of the present clock cycle.
CLK
FWH4
FWH[3:0]
STR
IDS
IMADDR
IMS
DATA
TAR
RSYNC
TAR
1161 F10.0
Figure 7: Write Waveforms
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Abort Mechanism
If FWH4 is driven low for one or more clock cycles during a FWH cycle, the cycle will be terminated
and the device will wait for the ABORT command. The host may drive the FWH[3:0] with ‘1111b’
(ABORT command) to return the device to Ready mode. If abort occurs during a Write operation, the
data may be incorrectly altered.
Response To Invalid Fields
During FWH operations, the FWH will not explicitly indicate that it has received invalid field sequences.
The response to specific invalid fields or sequences is as follows:
Address out of range:
The FWH address sequence is 7 fields long (28 bits), but only the last five address fields (20 bits) will
be decoded by SST49LF008A.
Address A22 has the special function of directing reads and writes to the flash core (A22=1) or to the
register space (A22=0).
Invalid IMSIZE field:
If the FWH receives an invalid size field during a Read or Write operation, the device will reset and no
operation will be attempted. The SST49LF008A will not generate any kind of response in this situation.
Invalid-size fields for a Read/Write cycle are anything but 0000b.
Device Memory Hardware Write Protection
The Top Boot Lock (TBL#) and Write Protect (WP#) pins are provided for hardware write protection of
device memory in the SST49LF008A. The TBL# pin is used to write protect 16 boot sectors (64 KByte)
at the highest flash memory address range for the SST49LF008A. WP# pin write protects the remaining sectors in the flash memory.
An active low signal at the TBL# pin prevents Program and Erase operations of the top boot sectors.
When TBL# pin is held high, write protection of the top boot sectors is then determined by the Boot
Block Locking register. The WP# pin serves the same function for the remaining sectors of the device
memory. The TBL# and WP# pins write protection functions operate independently of one another.
Both TBL# and WP# pins must be set to their required protection states prior to starting a Program or
Erase operation. A logic level change occurring at the TBL# or WP# pin during a Program or Erase
operation could cause unpredictable results. TBL# and WP# pins cannot be left unconnected.
TBL# is internally OR’ed with the top Boot Block Locking register. When TBL# is low, the top Boot
Block is hardware write protected regardless of the state of the Write-Lock bit for the Boot Block Locking register. Clearing the Write-Protect bit in the register when TBL# is low will have no functional
effect, even though the register may indicate that the block is no longer locked.
WP# is internally OR’ed with the Block Locking register. When WP# is low, the blocks are hardware
write protected regardless of the state of the Write-Lock bit for the corresponding Block Locking registers. Clearing the Write-Protect bit in any register when WP# is low will have no functional effect, even
though the register may indicate that the block is no longer locked.
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8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Reset
A VIL on INIT# or RST# pin initiates a device reset. INIT# and RST# pins have the same function internally. It is required to drive INIT# or RST# pins low during a system reset to ensure proper CPU initialization.
During a Read operation, driving INIT# or RST# pins low deselects the device and places the output
drivers, FWH[3:0], in a high-impedance state. The reset signal must be held low for a minimal duration
of time TRSTP. A reset latency will occur if a reset procedure is performed during a Program or Erase
operation. See Table 19, Reset Timing Parameters for more information. A device reset during an
active Program or Erase will abort the operation and memory contents may become invalid due to data
being altered or corrupted from an incomplete Erase or Program operation.
Write Operation Status Detection
The SST49LF008A device provides two software means to detect the completion of a Write (Program
or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two
status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is incorporated into the FWH Read cycle. The actual completion of the nonvolatile write is asynchronous with the
system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion
of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may
appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result
occurs, the software routine should include a loop to read the accessed location an additional two (2)
times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is
valid.
Data# Polling (DQ7)
When the SST49LF008A device is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce
true data. Note that even though DQ7 may have valid data immediately following the completion of an
internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data
bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase
operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed,
DQ7 will produce a ‘1’. Proper status will not be given using Data# Polling if the address is in the invalid
range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce
alternating ‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation
is completed, the toggling will stop.
Multiple Device Selection
The four ID pins, ID[3:0], allow multiple devices to be attached to the same bus by using different ID
strapping in a system. When the SST49LF008A is used as a boot device, ID[3:0] must be strapped as
0000, all subsequent devices should use a sequential up-count strapping (i.e. 0001, 0010, 0011, etc.).
The SST49LF008A will compare the strapping values, if there is a mismatch, the device will ignore the
remainder of the cycle and go into standby mode. For further information regarding FWH device map-
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Data Sheet
ping and paging, please refer to the Intel 82801(ICH) I/O Controller Hub documentation. Since there is
no ID support in PP Mode, to program multiple devices a stand-alone PROM programmer is recommended.
Registers
There are three types of registers available on the SST49LF008A, the General Purpose Inputs register, Block Locking registers and the JEDEC ID registers. These registers appear at their respective
address location in the 4 GByte system memory map. Unused register locations will read as 00H.
Attempts to read or write to any registers during internal Write operations will be ignored.
General Purpose Inputs Register
The GPI_REG (General Purpose Inputs Register) passes the state of FGPI[4:0] pins at power-up on
the SST49LF008A. It is recommended that the FGPI[4:0] pins are in the desired state before FWH4 is
brought low for the beginning of the bus cycle, and remain in that state until the end of the cycle. There
is no default value since this is a pass-through register. The GPI register for the boot device appears at
FFBC0100H in the 4 GByte system memory map, and will appear elsewhere if the device is not the
boot device. Register is not available for read when the device is in Erase/Program operation. See
Table 5 for the GPI_REG bits and function.
Table 5: General Purpose Inputs Register
Pin #
Bit
Function
32-PLCC
32-TSOP
40-TSOP
7:5
Reserved
-
-
-
4
FGPI[4]
Reads status of general
purpose input pin
30
6
7
3
FGPI[3]
Reads status of general
purpose input pin
3
11
15
2
FGPI[2]
Reads status of general
purpose input pin
4
12
16
1
FGPI[1]
Reads status of general
purpose input pin
5
13
17
0
FGPI[0]
Reads status of general
purpose input pin
6
14
18
T5.3 25085
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Data Sheet
Block Locking Registers
SST49LF008A provides software controlled lock protection through a set of Block Locking registers.
The Block Locking Registers are read/write registers and it is accessible through standard addressable
memory locations specified in Table 6. Unused register locations will read as 00H.
Table 6: Block Locking Registers for SST49LF008A1
Register
Block Size
Protected Memory Address Range
Memory Map Register Address
T_BLOCK_LK
64K
0FFFFFH - 0F0000H
FFBF0002H
T_MINUS01_LK
64K
0EFFFFH - 0E0000H
FFBE0002H
T_MINUS02_LK
64K
0DFFFFH - 0D0000H
FFBD0002H
T_MINUS03_LK
64K
0CFFFFH - 0C0000H
FFBC0002H
T_MINUS04_LK
64K
0BFFFFH - 0B0000H
FFBB0002H
T_MINUS05_LK
64K
0AFFFFH - 0A0000H
FFBA0002H
T_MINUS06_LK
64K
09FFFFH - 090000H
FFB90002H
T_MINUS07_LK
64K
08FFFFH - 080000H
FFB80002H
T_MINUS08_LK
64K
07FFFFH - 070000H
FFB70002H
T_MINUS09_LK
64K
06FFFFH - 060000H
FFB60002H
T_MINUS10_LK
64K
05FFFFH - 050000H
FFB50002H
T_MINUS11_LK
64K
04FFFFH - 040000H
FFB40002H
T_MINUS12_LK
64K
03FFFFH - 030000H
FFB30002H
T_MINUS13_LK
64K
02FFFFH - 020000H
FFB20002H
T_MINUS14_LK
64K
01FFFFH -010000H
FFB10002H
T_MINUS15_LK
64K
00FFFFH - 000000H
FFB00002H
T6.4 25085
1. Default value at power up is 01H
Table 7: Block Locking Register Bits
Reserved Bit [7..2]
000000
000000
000000
000000
Lock-Down Bit [1]
0
0
1
1
Write-Lock Bit [0]
0
1
0
1
Lock Status
Full Access
Write Locked (Default State at Power-Up)
Locked Open (Full Access Locked Down)
Write Locked Down
T7.3 25085
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Data Sheet
Write Lock
The Write-Lock bit, bit 0, controls the lock state described in Table 7. The default Write status of all
blocks after power-up is write locked. When bit 0 of the Block Locking register is set, Program and
Erase operations for the corresponding block are prevented. Clearing the Write-Lock bit will unprotect
the block. The Write-Lock bit must be cleared prior to starting a Program or Erase operation since it is
sampled at the beginning of the operation.
The Write-Lock bit functions in conjunction with the hardware Write Lock pin TBL# for the top Boot
Block. When TBL# is low, it overrides the software locking scheme. The top Boot Block Locking register does not indicate the state of the TBL# pin.
The Write-Lock bit functions in conjunction with the hardware WP# pin for blocks 0 to 6. When WP# is
low, it overrides the software locking scheme. The Block Locking register does not indicate the state of
the WP# pin.
Lock Down
The Lock-Down bit, bit 1, controls the Block Locking register as described in Table 7. When in the FWH
interface mode, the default Lock Down status of all blocks upon power-up is not locked down. Once the
Lock-Down bit is set, any future attempted changes to that Block Locking register will be ignored. The
Lock-Down bit is only cleared upon a device reset with RST# or INIT# or power down. Current Lock
Down status of a particular block can be determined by reading the corresponding Lock-Down bit.
Once a block’s Lock-Down bit is set, the Write-Lock bits for that block can no longer be modified, and
the block is locked down in its current state of write accessibility.
JEDEC ID Registers
The JEDEC ID registers for the boot device appear at FFBC0000H and FFBC0001H in the 4 GByte
system memory map, and will appear elsewhere if the device is not the boot device. Register is not
available for read when the device is in Erase/Program operation. Unused register location will read as
00H. Refer to the relevant application note for details. See Table 2 for the device ID code.
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Data Sheet
Parallel Programming Mode
Device Operation
Commands are used to initiate the memory operation functions of the device. The data portion of the
software command sequence is latched on the rising edge of WE#. During the software command
sequence the row address is latched on the falling edge of R/C# and the column address is latched on
the rising edge of R/C#.
Reset
A VIL on RST# pin initiates a device reset.
Read
The Read operation of the SST49LF008A device is controlled by OE#. OE# is the output control and is
used to gate data from the output pins. Refer to the Read cycle timing diagram, Figure 13, for further
details.
Byte-Program Operation
The SST49LF008A device is programmed on a byte-by-byte basis. Before programming, one must
ensure that the sector, in which the byte which is being programmed exists, is fully erased. The ByteProgram operation is initiated by executing a four-byte command load sequence for Software Data
Protection with address (BA) and data in the last byte sequence. During the Byte-Program operation,
the row address (A10-A0) is latched on the falling edge of R/C# and the column Address (A21-A11) is
latched on the rising edge of R/C#. The data bus is latched in the rising edge of WE#. The Program
operation, once initiated, will be completed, within 20 µs. See Figure 14 for Program operation timing
diagram, Figure 17 for timing waveforms, and Figure 25 for its flowchart. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the
host is free to perform additional tasks. Any commands written during the internal Program operation
will be ignored.
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Data Sheet
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The
sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated
by executing a six-byte command load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The internal Erase operation begins after
the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit
methods. See Figure 18 for Sector-Erase timing waveforms. Any commands written during the SectorErase operation will be ignored.
Block-Erase Operation
The Block-Erase Operation allows the system to erase the device in 64 KByte uniform block size for
the SST49LF008A. The Block-Erase operation is initiated by executing a six-byte command load
sequence for Software Data Protection with Block-Erase command (50H) and block address. The
internal Block-Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined
using either Data# Polling or Toggle Bit methods. See Figure 19 for timing waveforms. Any commands
written during the Block-Erase operation will be ignored.
Chip-Erase
The SST49LF008A device provides a Chip-Erase operation only in PP Mode, which allows the user to
erase the entire memory array to the ‘1’s state. This is useful when the entire device must be quickly
erased.
The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command
sequence with Chip-Erase command (10H) with address 5555H in the last byte sequence. The internal
Erase operation begins with the rising edge of the sixth WE#. During the internal Erase operation, the
only valid read is Toggle Bit or Data# Polling. See Table 9 for the command sequence, Figure 20 for
timing diagram, and Figure 28 for the flowchart. Any commands written during the Chip-Erase operation will be ignored.
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Data Sheet
Write Operation Status Detection
The SST49LF008A device provides two software means to detect the completion of a Write (Program
or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two
status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled
after the rising edge of WE# which initiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a
Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this
occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with
either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software
routine should include a loop to read the accessed location an additional two (2) times. If both reads
are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
Data# Polling (DQ7)
When the SST49LF008A device is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce
true data. Note that even though DQ7 may have valid data immediately following the completion of an
internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data
bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase
operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed,
DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# pulse for Program
operation. For Sector- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# pulse.
See Figure 15 for Data# Polling timing diagram and Figure 26 for a flowchart. Proper status will not be
given using Data# Polling if the address is in the invalid range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce
alternating ‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation
is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is
valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block- or ChipErase, the Toggle Bit is valid after the rising edge of sixth WE# pulse. See Figure 16 for Toggle Bit timing diagram and Figure 26 for a flowchart.
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Data Sheet
Table 8: Operation Modes Selection (PP Mode)
Mode
RST# OE# WE# DQ
Erase
VIH
VIH
VIH
VIL
VIH
VIH
Reset
VIL
X
Write Inhibit
VIH
X
VIH
VIL
Read
Program
Product Identification
Address
VIH
DOUT
AIN
VIL
DIN
AIN
VIL
X1
Sector or Block address, XXH for ChipErase
X
High Z
X
VIL
X
High Z/DOUT
X
X
VIH
VIH
High Z/DOUT
X
Manufacturer’s ID (BFH) A18-A1=VIL, A0=VIL
Device ID2
A18-A1=VIL, A0=VIH
T8.6 25085
1. X can be VIL or VIH, but no other value.
2. Device ID = 5AH for SST49LF008A
Data Protection
The SST49LF008A device provides both hardware and software features to protect nonvolatile data
from inadvertent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# pulse of less than 5 ns will not initiate a Write cycle.
VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V.
Write Inhibit Mode: Forcing OE# low, WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
Software Data Protection (SDP)
SST49LF008A provides the JEDEC approved Software Data Protection scheme for all data alteration
operation, i.e., Program and Erase. Any Program operation requires the inclusion of a series of threebyte sequences. The three-byte load sequence is used to initiate the Program operation, providing
optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down.
Any Erase operation requires the inclusion of a six-byte load sequence. The SST49LF008A device is
shipped with the Software Data Protection permanently enabled. See Table 9 for the specific software
command codes. During SDP command sequence, invalid commands will abort the device to Read
mode, within TRC.
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Data Sheet
Software Command Sequence
Table 9: Software Command Sequence
1st1
Write Cycle
Command
Sequence
2nd1
Write Cycle
Addr2 Data Addr2
3rd1
Write Cycle
Data Addr2
4th1
Write Cycle
Data Addr2
BA3
5th1
Write Cycle
Data Addr2
6th1
Write Cycle
Data Addr2
Data
Data
Byte-Program
5555H AAH 2AAAH 55H 5555H A0H
Sector-Erase
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H
SAX4
30H
Block-Erase
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H
BAX5
50H
Chip-Erase6
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Software ID Entry7,8
Software ID
Exit9
Software ID Exit9
5555H AAH 2AAAH 55H 5555H 90H
XXH
F0H
5555H AAH 2AAAH 55H 5555H F0H
T9.6 25085
1. FWH Mode uses consecutive Write cycles to complete a command sequence; PP Mode uses consecutive bus cycles to
complete a command sequence.
2. Address format A14-A0 (Hex), Addresses A21-A15 can be VIL or VIH, but no other value, for the Command sequence in
PP Mode.
3. BA = Program Byte address
4. SAX for Sector-Erase Address
5. BAX for Block-Erase Address
6. Chip-Erase is supported in PP Mode only
7. SST Manufacturer’s ID = BFH, is read with A0=0,
With A19-A1 = 0; 49LF008A Device ID = 5AH, is read with A0 = 1.
8. The device does not remain in Software Product ID mode if powered down.
9. Both Software ID Exit operations are equivalent.
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Data Sheet
Electrical Specifications
The AC and DC specifications for the FWH Interface signals (FWH[3:0], CLK, FWH4, and RST#) as
defined in Section 4.2.2 of the PCI Local Bus Specification, Rev. 2.1. Refer to Table 12 for the DC voltage
and current specifications. Refer to the tables on pages 24 through 29 for the AC timing specifications for
Clock, Read/Write, and Reset operations.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage ( VOUT > 0.1VDD
0.18VDD > VOUT > 0
38 VDD
mA
VOUT=0.18VDD
mA
-3 < VIN -1
ICH
High Clamp Current
mA
VDD+4 > VIN VDD+1
slewr2
Output Rise Slew Rate
1
4
V/ns
0.2VDD-0.6VDD load
slewf2
Output Fall Slew Rate
1
4
V/ns
0.6VDD-0.2VDD load
T18.3 25085
1. See PCI spec.
2. PCI specification output load is used.
Table 19:Reset Timing Parameters, VDD =3.0-3.6V (FWH Mode)
Symbol
Parameter
Min
Max
Units
TPRST
VDD stable to Reset Low
1
ms
TKRST
Clock Stable to Reset Low
100
µs
TRSTP
RST# Pulse Width
100
TRSTF
RST# Low to Output Float
TRST
1
TRSTE
ns
48
RST# High to FWH4 Low
ns
1
RST# Low to reset during Sector-/Block-Erase or Program
µs
10
µs
T19.5 25085
1. There will be a latency of TRSTE if a reset procedure is performed during a Program or Erase operation.
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Data Sheet
VDD
TPRST
CLK
TRSTP
TKRST
RST#/INIT#
TRSTE
TRSTF
TRST
Sector-/Block-Erase
or Program operation
aborted
FWH[3:0]
FWH4
1161 F12.0
Figure 9: Reset Timing Diagram
VTH
CLK
VTEST
VTL
TVAL
FWH [3:0]
(Valid Output Data)
FWH [3:0]
(Float Output Data)
TON
TOFF
1161 F13.0
Figure 10:Output Timing Parameters
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Data Sheet
VTH
VTEST
CLK
VTL
TSU
TDH
FWH [3:0]
(Valid Input Data)
Inputs
Valid
VMAX
1161 F14.0
Figure 11:Input Timing Parameters
Table 20:Interface Measurement Condition Parameters
Symbol
Value
Units
1
0.6 VDD
V
VTL1
0.2 VDD
V
VTEST
0.4 VDD
V
VMAX1
0.4 VDD
V
Input Signal Edge Rate
1 V/ns
VTH
T20.3 25085
1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met
with no more overdrive than this.
VMAX specified the maximum peak-to-peak waveform allowed for measuring input timing. Production testing may
use different voltage values, but must correlate results back to these parameters.
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Data Sheet
AC Characteristics (PP Mode)
Table 21:Read Cycle Timing Parameters, VDD =3.0-3.6V (PP Mode)
Symbol
TRC
TRST
TAS
TAH
TAA
TOE
TOLZ
TOHZ
TOH
Parameter
Read Cycle Time
RST# High to Row Address Setup
R/C# Address Set-up Time
R/C# Address Hold Time
Address Access Time
Output Enable Access Time
OE# Low to Active Output
OE# High to High-Z Output
Min
270
1
45
45
Output Hold from Address Change
0
Max
Units
ns
µs
ns
ns
ns
ns
ns
ns
120
60
0
35
ns
T21.2 25085
Table 22:Program/Erase Cycle Timing Parameters, VDD =3.0-3.6V (PP Mode)
Symbol
TRST
TAS
TAH
TCWH
TOES
TOEH
TOEP
TOET
TWP
TWPH
TDS
TDH
TIDA
TBP
TSE
TBE
TSCE
Parameter
RST# High to Row Address Setup
R/C# Address Setup Time
R/C# Address Hold Time
R/C# to Write Enable High Time
OE# High Setup Time
OE# High Hold Time
OE# to Data# Polling Delay
OE# to Toggle Bit Delay
WE# Pulse Width
WE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Byte Programming Time
Sector-Erase Time
Block-Erase Time
Chip-Erase Time
Min
1
50
50
50
20
20
Max
Units
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ms
ms
40
40
100
100
50
5
150
20
25
25
100
T22.2 25085
Table 23:Reset Timing Parameters, VDD =3.0-3.6V (PP Mode)
Symbol
TPRST
TRSTP
TRSTF
TRST1
TRSTE
TRSTC
Parameter
VDD stable to Reset Low
RST# Pulse Width
RST# Low to Output Float
RST# High to Row Address Setup
RST# Low to reset during Sector-/Block-Erase or Program
RST# Low to reset during Chip-Erase
Min
1
100
Max
Units
ms
ns
ns
µs
µs
µs
48
1
10
50
T23.1 25085
1. There will be a reset latency of TRSTE or TRSTC if a reset procedure is performed during a Program or Erase operation.
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Data Sheet
VDD
TPRST
Addresses
Row Address
R/C#
TRSTP
RST#
Sector-/Block-Erase
or Program operation
aborted
TRSTE
TRSTC
TRSTF
TRST
Chip-Erase
aborted
DQ7-0
1161 F15.0
Figure 12:Reset Timing Diagram (PP Mode)
TRSTP
RST#
TRST
TRC
Row Address
Addresses
TAS
TAH
Column Address
TAS
Row Address
Column Address
TAH
R/C#
VIH
WE#
TAA
OE#
TOH
TOE
TOLZ
DQ7-0
High-Z
TOHZ
Data Valid
High-Z
1161 F16.0
Figure 13:Read Cycle Timing Diagram (PP Mode)
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Data Sheet
TRSTP
RST#
TRST
Row Address
Addresses
TAS
Column Address
TAH
TAS
TAH
R/C#
TCWH
TOEH
OE#
TOES
TWP
TWPH
WE#
TDS
DQ7-0
TDH
Data Valid
1161 F17.0
Figure 14:Write Cycle Timing Diagram (PP Mode)
Addresses
Row
Column
R/C#
WE#
OE#
TOEP
DQ7
D
D#
D#
D
1161 F18.0
Figure 15:Data# Polling Timing Diagram (PP Mode)
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Data Sheet
Addresses
Row
Column
R/C#
WE#
OE#
TOET
D
DQ6
D
1161 F19.0
Figure 16:Toggle Bit Timing Diagram (PP Mode)
Four-Byte Code for Byte-Program
Addresses
5555
2AAA
5555
BA
R/C#
OE#
TWP TWPH
TBP
WE#
SB0
DQ7-0
SB1
AA
55
SB2
A0
BA = Byte-Program Address
SB3
Internal Program Starts
Data
1161 F20.0
Figure 17:Byte-Program Timing Diagram (PP Mode)
©2011 Silicon Storage Technology, Inc.
DS25085A
32
10/11
8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Six-Byte code for
Sector-Erase Operation
Addresses
5555
2AAA
5555
5555
2AAA
SAX
R/C#
OE#
TWP
TSE
TWPH
WE#
DQ7-0
SB0
SB1
SB2
AA
55
SB3
80
SB4
AA
Internal Erasure Starts
SB5
55
30
1161 F21.0
SAX = Sector Address
Figure 18:Sector-Erase Timing Diagram (PP Mode)
Six-Byte code for
Block-Erase Operation
Addresses
5555
2AAA
5555
5555
2AAA
BAX
R/C#
OE#
TWP
TBE
TWPH
WE#
DQ7-0
SB0
SB1
AA
55
SB2
80
SB3
AA
SB4
55
SB5 Internal Erasure Starts
50
1161 F22.0
Figure 19:Block-Erase Timing Diagram (PP Mode)
©2011 Silicon Storage Technology, Inc.
DS25085A
33
10/11
8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Six-Byte code for Chip-Erase Operation
Addresses
5555
2AAA
5555
5555
2AAA
5555
R/C#
OE#
TWP
TSCE
TWPH
WE#
DQ7-0
SB0
SB1
SB2
SB3
SB4
SB5
AA
55
80
AA
55
10
Internal Erasure Starts
1161 F23.0
Figure 20:Chip-Erase Timing Diagram (PP Mode)
Three-byte sequence for
Software ID Entry
Addresses
5555
2AAA
5555
0000
0001
R/C#
OE#
TIDA
TWP
WE#
TWPH
DQ7-0
TAA
AA
55
90
SW0
SW1
SW2
BF
Device ID = 5AH for SST49LF008A
Device ID
1161 F24.2
Figure 21:Software ID Entry and Read (PP Mode)
©2011 Silicon Storage Technology, Inc.
DS25085A
34
10/11
8 Mbit Firmware Hub
SST49LF008A
A Microchip Technology Company
Data Sheet
Three-Byte Sequence for
Software ID Exit and Reset
Addresses
2AAA
5555
5555
R/C#
OE#
TWP
WE#
TWPH
SW0
AA
DQ7-0
SW1
55
TIDA
SW2
F0
1161 F25.0
Figure 22:Software ID Exit and Reset (PP Mode)
VIHT
INPUT
VIT
REFERENCE POINTS
VOT
OUTPUT
VILT
1161 F26.0
AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise
and fall times (10% 90%) are