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SY100EP195VTG-TR

SY100EP195VTG-TR

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TQFP32

  • 描述:

    IC DELAY LN 1024TAP PROG 32TQFP

  • 数据手册
  • 价格&库存
SY100EP195VTG-TR 数据手册
SY100EP195V 3.3V/5V 1.6 GHz Programmable Delay Features General Description • Pin-for-Pin, Plug-In Compatible to the ON Semiconductor MC100EP195 • Maximum Frequency >1.6 GHz • Programmable Range: 2.1 ns to 10.8 ns • 10 ps Increments • PECL Mode Operating Range: VCC = 3.0V to 5.5V with VEE = 0V • NECL Mode Operating Range: VCC = 0V with VEE = –3.0V to –5.5V • Open Input Default State • Safety Clamp on Inputs • A Logic-High on the /EN pin will Force Q to Logic-Low • D[0:10] Can Accept Either ECL, CMOS, or TTL Inputs • VBB Output Reference Voltage • Available in a 32-Pin TQFP Package The SY100EP195V is a programmable delay line, varying the time a logic signal takes to traverse from IN to Q. This delay can vary from about 2.1 ns to about 10.8 ns. The input can be PECL, LVPECL, NECL, or LVNECL. The delay varies in discrete steps based on a control word presented to the SY100EP195V. The 10-bit width of this latched control register allows for delay increments of approximately 10 ps. An eleventh control bit allows the cascading of multiple SY100EP195V devices, for a wider delay range. Each additional SY100EP195V effectively doubles the delay range available. For maximum flexibility, the control register interface accepts CMOS or TTL level signals, as well as the input level at the IN, /IN pins. Package Type Applications SY100EP195V 32-Lead TQFP (T) (Top View) D7 D6 D5 D4 VEE D3 D2 D1 • Clock De-skewing • Timing Adjustment • Aperture Centering 32 31 30 29 28 27 26 25 D8 D9 D10 IN /IN VBB VEF VCF 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 VEE D0 VCC Q /Q VCC VCC NC VEE LEN SETMIN SETMAX VCC /CASCADE CASCADE /EN 9 10 11 12 13 14 15 16  2019 Microchip Technology Inc. DS20006194A-page 1 SY100EP195V Typical Application Circuit Data Signal of Unknown Phase D SY100EP195V CLOCK+ IN CLOCK– /IN Q Q+ Flip-Flop CK Q– /Q D[9:0] CONTROL LOGIC Functional Block Diagram DS20006194A-page 2  2019 Microchip Technology Inc. SY100EP195V 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage (VCC) PECL Mode (VEE = 0V).......................................................................................... –0.5V to +6.0V Supply Voltage (VEE) NECL Mode (VCC = 0V).......................................................................................... +0.5V to –6.0V Any Input Voltage (VIN) PECL Mode ...................................................................................................................................... –0.5V to VCC + 0.5V NECL Mode....................................................................................................................................... +0.5V to VEE – 0.5V ECL Output Current (IOUT) Continuous ..............................................................................................................................................................50 mA Surge.....................................................................................................................................................................100 mA IBB Sink/Source Current .......................................................................................................................................±0.5 mA ESD Rating (Note 1) .............................................................................................................................................>1.5 kV Operating Ratings ‡ Supply Voltage (VCC) PECL Mode (VEE = 0V).......................................................................................... +3.0V to +5.5V Supply Voltage (VEE) NECL Mode (VCC = 0V).......................................................................................... –3.0V to –5.5V † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ‡ Notice: The device is not guaranteed to function outside its operating ratings. Note 1: Devices are ESD sensitive. Handling precautions recommended.  2019 Microchip Technology Inc. DS20006194A-page 3 SY100EP195V DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: TA = –40°C to +85°C, unless otherwise stated. Parameter Symbol Power Supply Voltage (PECL) VCC Power Supply Voltage (NECL) VEE Power Supply Current (Note 1) IEE Note 1: Min. Typ. Max. 3.0 3.3 3.6 4.5 5.0 5.5 –3.6 –3.3 –3.0 –5.5 –5.0 –4.5 — 150 175 Units Conditions V — V — mA No load, over supply voltage Required 500 lfpm air flow when using +5V or –5V power supply. LVPECL DC ELECTRICAL CHARACTERISTICS (100KEP) Electrical Characteristics: VCC = 3.3V, VEE = 0V; TA = –40°C to +85°C. (Note 1, Note 2) Parameter Symbol Min. Typ. Max. Units Output High Voltage VOH 2155 2280 2405 mV Figure 7-1, All loading with 50Ω to VCC – 2V Output Low Voltage VOL 1355 1480 1605 mV Figure 7-1, All loading with 50Ω to VCC – 2V 2075 — 2420 mV Figure 7-3, Figure 7-4 mV Figure 7-3, Figure 7-4 PECL Input High Voltage CMOS Input High Voltage VIH TTL Input High Voltage 1815 — — 2000 — — Conditions 1355 — 1675 VIL — — 1485 — — 800 Output Voltage Reference VBB 1775 1875 1975 mV — Input Select Voltage VCF 1610 1720 1825 mV — Mode Connection VEF 1900 2000 2100 mV — VIHCMR 2.0 — 3.3 V μA PECL Input Low Voltage CMOS Input Low Voltage TTL Input Low Voltage Input High Voltage Common Mode Range (Note 3) Input High Current Input Low Current Note 1: 2: 3: IIH IIL — — 150 0.5 — — –150 — — μA Figure 7-6 — IN /IN Device is guaranteed to meet the DC specifications shown in the table after thermal equilibrium has been established. The device is tested in a socket such that transverse airflow of ≥500 lfpm is maintained. Input and output parameters vary 1:1 with VCC. VIHCMR maximum varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. DS20006194A-page 4  2019 Microchip Technology Inc. SY100EP195V PECL DC ELECTRICAL CHARACTERISTICS (100KEP) Electrical Characteristics: VCC = 5.0V, VEE = 0V; TA = –40°C to +85°C. (Note 1, Note 2) Parameter Symbol Min. Typ. Max. Units Output High Voltage VOH 3855 3980 4105 mV Figure 7-1, All loading with 50Ω to VCC – 2V Output Low Voltage VOL 3055 3180 3305 mV Figure 7-1, All loading with 50Ω to VCC – 2V 3775 — 4120 VIH 2750 — — mV Figure 7-3, Figure 7-4 TTL Input High Voltage 2000 — — PECL Input Low Voltage 3055 — 3375 — — 2250 mV Figure 7-3, Figure 7-4 — — 800 VBB 3475 3575 3675 mV — VIHCMR 2.0 — 5.0 V Figure 7-6 μA — PECL Input High Voltage CMOS Input High Voltage CMOS Input Low Voltage VIL TTL Input Low Voltage Output Voltage Reference Input High Voltage Common Mode Range (Note 3) Input High Current Input Low Current Note 1: 2: 3: IIH IIL — — 150 0.5 — — –150 — — μA Conditions IN /IN Device is guaranteed to meet the DC specifications shown in the table after thermal equilibrium has been established. The device is tested in a socket such that transverse airflow of ≥500 lfpm is maintained. Input and output parameters vary 1:1 with VCC. VIHCMR maximum varies 1:1 with VCC. The VIHCMR range is referenced to the most positive side of the differential input signal. NECL DC ELECTRICAL CHARACTERISTICS (100KEP) Electrical Characteristics: VCC = 0V, VEE = –5.5V to –3.0V; TA = –40°C to +85°C. Parameter Symbol Min. Typ. Max. Units Conditions Output High Voltage VOH –1145 –1020 –895 mV Figure 7-2, All loading with 50Ω to VCC – 2V Output Low Voltage VOL –1945 –1820 –1695 mV Figure 7-2, All loading with 50Ω to VCC – 2V Input High Voltage NECL VIH –1225 — –880 mV Figure 7-5 Input Low Voltage NECL VIL –1945 — –1625 mV Figure 7-5 Output Voltage Reference VBB –1525 –1425 –1325 mV — VIHCMR VEE + 2.0 — 0.0 V Figure 7-7 μA — Input High Voltage Common Mode Range () Input High Current Input Low Current Note 1: 2: IIH IIL — — 150 0.5 — — –150 — — μA IN /IN Device is guaranteed to meet the DC specifications shown in the table after thermal equilibrium has been established. The device is tested in a socket such that transverse airflow of ≥500 lfpm is maintained. VIHCMR minimum varies 1:1 with VEE. The VIHCMR range is referenced to the most positive side of the differential input signal.  2019 Microchip Technology Inc. DS20006194A-page 5 SY100EP195V AC ELECTRICAL CHARACTERISTICS Electrical Characteristics: VCC = 3.0 to 5.5V, VEE = 0V or VCC = 0V, VEE = –3.0 to –5.5V; TA = –40°C to +85°C. (Note 1, Note 2) Parameter Maximum Frequency Symbol Min. Typ. Max. Units fMAX 1.6 — — GHz 1650 2000 2450 1800 2070 2600 Propagation Delay, IN-to-Q; D[0-9] = 0 Propagation Delay, IN-to-Q; D[0-9] = 1023 tPD Propagation Delay, /EN-to-Q; D[0-9] = 0 Propagation Delay, D10 to CASCADE Programmable Range tRANGE Step Delay, D0 High Note 4 applies to all Step Delay entries. Step Delay, D1 High Step Delay, D2 High Step Delay, D3 High Δt Step Delay, D4 High Step Delay, D5 High Step Delay, D6 High Step Delay, D7 High DS20006194A-page 6 Conditions Note 3 TA = –40°C ps TA = +25°C 1950 2150 2750 TA = +85°C 9500 10551 13500 TA = –40°C 9800 10756 14000 10600 11226 15800 ps TA = +25°C 1600 2150 2600 1800 2300 2800 2000 2430 3000 TA = +85°C 300 400 500 TA = –40°C 325 410 550 325 430 625 7850 8551 — 8000 8686 — 8650 9076 — tPD(MAX) – tPD(MIN), TA = +85°C — 9 — TA = –40°C — 10 — — 10 — — 25 — — 26 — — 27 — TA = +85°C — 42 — TA = –40°C — 42 — — 43 — — 75 — — 80 — — 81 — TA = +85°C — 142 — TA = –40°C — 143 — — 150 — — 296 — — 300 — — 310 — TA = +85°C — 532 — TA = –40°C — 540 — — 565 — — 1080 — — 1095 — — 1140 — TA = +85°C TA = –40°C ps ps TA = +25°C TA = +25°C TA = +85°C tPD(MAX) – tPD(MIN), TA = –40°C ps ps tPD(MAX) – tPD(MIN), TA = +25°C TA = +25°C TA = +85°C TA = –40°C ps ps TA = +25°C TA = +25°C TA = +85°C TA = –40°C ps ps TA = +25°C TA = +25°C TA = +85°C TA = –40°C ps ps TA = +25°C TA = +25°C TA = +85°C TA = –40°C ps TA = +25°C TA = +85°C  2019 Microchip Technology Inc. SY100EP195V AC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: VCC = 3.0 to 5.5V, VEE = 0V or VCC = 0V, VEE = –3.0 to –5.5V; TA = –40°C to +85°C. (Note 1, Note 2) Parameter Symbol Step Delay, D8 High Δt Step Delay, D9 High Duty Cycle Skew, tPHL – tPLH tSKEW Setup Time, D-to-LEN Setup Time, D-to-IN (Note 6) tS Setup Time, /EN-to-IN (Note 7) Hold Time, LEN-to-D tH Hold Time, IN-to-/EN (Note 8) Release Time, /EN-to-IN (Note 9) Release Time, SETMAX-to-LEN Release Time, SETMIN-to-LEN  2019 Microchip Technology Inc. tR Min. Typ. Max. Units Conditions — 2100 — — 2150 — — 2250 — — 4250 — — 4300 — — 4500 — — 25 — ps TA = +25°C, Note 5 200 0 — ps — 300 140 — 300 160 — 300 180 — 300 150 — 300 170 — 300 180 — TA = +85°C 200 60 — TA = –40°C 200 100 — 200 80 — 400 250 — 400 280 — 400 300 — — 500 — 400 200 — 400 250 — 400 300 — 350 275 — 350 200 — 350 335 — TA = –40°C ps TA = +25°C TA = +85°C TA = –40°C ps TA = +25°C TA = +85°C TA = –40°C ps TA = +25°C TA = +85°C TA = –40°C ps ps TA = +25°C TA = +25°C TA = +85°C TA = –40°C ps TA = +25°C TA = +85°C ps TA = +25°C TA = –40°C ps TA = +25°C TA = +85°C TA = –40°C ps TA = +25°C TA = +85°C DS20006194A-page 7 SY100EP195V AC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: VCC = 3.0 to 5.5V, VEE = 0V or VCC = 0V, VEE = –3.0 to –5.5V; TA = –40°C to +85°C. (Note 1, Note 2) Parameter Symbol Min. Typ. Max. Cycle-to-Cycle Jitter tJIT — 0.2
SY100EP195VTG-TR 价格&库存

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SY100EP195VTG-TR
  •  国内价格 香港价格
  • 1+148.585061+17.94826
  • 25+123.8696525+14.96278
  • 100+112.62484100+13.60446

库存:1249