TC1017
150 mA, Tiny CMOS LDO With Shutdown
Features:
General Description:
• Space-saving 5-Pin SC-70 and SOT-23 Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µA (typ.)
• Very Low Dropout Voltage
• Rated 150 mA Output Current
• Requires Only 1 µF Ceramic Output Capacitance
• High Output Voltage Accuracy: 0.5% (typical)
• 10 µs (typ.) Wake-Up Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA (typ.)
• Overcurrent and Overtemperature Protection
• Pin-Compatible Upgrade for Bipolar Regulators
The TC1017 is a high-accuracy (typically ±0.5%)
CMOS upgrade for bipolar Low Dropout regulators
(LDOs). It is offered in a SC-70 or SOT-23 package.
The SC-70 package represents a 50% footprint reduction versus the popular SOT-23 package and is offered
in two pinouts to make board layout easier.
Developed specifically for battery-powered systems,
the TC1017’s CMOS construction consumes only
53 µA typical supply current over the entire 150 mA
operating load range. This can be as much as 60 times
less than the quiescent operating current consumed by
bipolar LDOs.
The TC1017 is designed to be stable, over the entire
input voltage and output current range, with low-value
(1 µF) ceramic or tantalum capacitors. This helps to
reduce board space and save cost. Additional integrated features, such as shutdown, overcurrent and
overtemperature protection, further reduce the board
space and cost of the entire voltage-regulating
application.
Applications:
•
•
•
•
•
•
Cellular/GSM/PHS Phones
Battery-Operated Systems
Portable Computers
Medical Instruments
Electronic Games
Pagers
Key performance parameters for the TC1017 include
low dropout voltage (285 mV typical at 150 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Package Types
SC-70
SOT-23
VIN
VOUT
VOUT
NC
VOUT
NC
5
4
5
4
5
4
TC1017R
TC1017
1
2
3
SHDN NC GND
2005-2013 Microchip Technology Inc.
1
2
TC1017
3
VIN GND SHDN
1
VIN
2
3
GND SHDN
DS21813F-page 1
TC1017
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Power Dissipation ......................... Internally Limited (Note 7)
Maximum Voltage On Any Pin ..................VIN + 0.3V to -0.3V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Function
Shutdown control input.
SHDN
NC
No connect
GND
Ground terminal
VOUT
Regulated voltage output
VIN
Unregulated supply input
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperatures of –40°C to +125°C.
Parameter
Input Operating Voltage
Maximum Output Current
Output Voltage
VOUT Temperature Coefficient
Sym.
Min.
Typ.
Max.
Units
Test Conditions
VIN
2.7
—
6.0
V
Note 1
IOUTMAX
100
—
—
mA
Note 1
150
—
—
VOUT
VR – 2.5%
VR ±0.5%
VR + 2.5%
V
Note 2
Note 3
VIN >= 3V and
VIN >= (VR + 2.5%) +
VDROPOUTMAX
TCVOUT
—
40
—
ppm/°C
VOUT/VIN)| / VR
—
0.04
0.2
%/V
Load Regulation (Note 4)
VOUT| / VR
—
0.38
1.5
%
Dropout Voltage (Note 5)
VIN – VOUT
—
—
—
—
2
90
180
285
—
200
350
500
mV
IL = 100 µA
IL = 50 mA
IL = 100 mA
IL = 150 mA
Line Regulation
Supply Current
(VR + 1V) < VIN < 6V
IL = 0.1 mA to IOUTMAX
IIN
—
53
90
µA
SHDN = VIH, IL = 0
Shutdown Supply Current
IINSD
—
0.05
2
µA
SHDN = 0V
Power Supply Rejection Ratio
PSRR
—
58
—
dB
f =1 kHz, IL = 50 mA
Note 1:
2:
3:
4:
5:
6:
The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT.
VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
6
V
–V
10
OUTMAX
OUTMIN
TCV OUT = -------------------------------------------------------------------------------------V OUT T
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 “Thermal Shutdown”, for more
details.
8:
Output current is limited to 120 mA (typ) when VOUT is less than 0.5V due to a load fault or short-circuit condition.
DS21813F-page 2
2005-2013 Microchip Technology Inc.
TC1017
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C
Boldface type specifications apply for junction temperatures of –40°C to +125°C.
Parameter
Sym.
Min.
Typ.
Max.
Units
Wake-Up Time
(from Shutdown mode)
tWK
—
10
—
µs
VIN = 5V, IL = 60 mA,
CIN = COUT =1 µF,
f = 100 Hz
Settling Time
(from Shutdown mode)
tS
—
32
—
µs
VIN = 5V, IL = 60 mA,
CIN = 1 µF,
COUT = 1 µF, f = 100 Hz
IOUTSC
—
120
—
mA
VOUT = 0V, Average
Current (Note 8)
VOUT/PD
—
0.04
—
V/W
Notes 6, 7
TSD
—
160
—
°C
TSD
—
10
—
°C
Output Short-Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Test Conditions
Output Noise
eN
—
800
—
nV/Hz
SHDN Input High Threshold
VIH
45
—
—
%VIN
VIN = 2.7V to 6.0V
SHDN Input Low Threshold
VIL
—
—
15
%VIN
VIN = 2.7V to 6.0V
Note 1:
2:
3:
4:
5:
6:
f = 10 kHz
The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + 2.5%) + VDROPOUT.
VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
6
VOUTMAX – V OUTMIN 10
TCV OUT = -------------------------------------------------------------------------------------V OUT T
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a 1V differential.
Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for t = 10 msec.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown. Please see Section 5.1 “Thermal Shutdown”, for more
details.
8:
Output current is limited to 120 mA (typ) when VOUT is less than 0.5V due to a load fault or short-circuit condition.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +6.0V and VSS = GND.
Parameters
Sym.
Min.
Specified Temperature Range
TA
-40
Operating Temperature Range
TA
-40
Storage Temperature Range
TA
-65
Thermal Resistance, 5L-SOT23
JA
Thermal Resistance, 5L-SC-70
JA
Typ.
Max.
Units
—
+125
°C
—
+125
°C
—
+150
°C
—
255
—
°C/W
—
450
—
°C/W
Conditions
Temperature Ranges
Extended Temperature parts
Thermal Package Resistances3
2005-2013 Microchip Technology Inc.
DS21813F-page 3
TC1017
2.0
TYPICAL PERFORMANCE CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
0.40
VOUT = 2.85V
0.35
TA = +125°C
0.30
TA = +25°C
0.25
TA = -40°C
0.20
VOUT = 2.85V
0.35
Dropout Voltage (V)
Dropout Voltage (V)
0.40
0.15
0.10
0.05
0.00
0.30
IOUT = 150 mA
0.25
0.20
IOUT = 100 mA
0.15
0.10
IOUT = 50 mA
0.05
0.00
0
25
50
75
100
125
150
-40
-15
10
Load Current (mA)
Dropout Voltage vs. Output
Load Regulation (%)
-0.30
VOUT = 2.85V
IOUT = 0-150 mA
-0.35
-0.40
-0.45
-0.50
VIN = 6.0V
-0.55
VIN = 3.85V
-0.60
VIN = 3.3V
-0.65
FIGURE 2-4:
Temperature.
160
Short Circuit Current (mA)
FIGURE 2-1:
Current.
-0.70
-15
10
FIGURE 2-2:
Temperature.
35
60
85
110
VOUT = 2.85V
140
120
100
80
60
40
20
110
1
2
3
Load Regulation vs.
FIGURE 2-5:
Input Voltage.
TA = +125°C
54
53
TA = +25°C
52
51
5
6
Short-Circuit Current vs.
57
VOUT = 2.85V
55
4
Input Voltage (V)
Supply Current (µA)
Supply Current (µA)
85
Dropout Voltage vs.
Temperature (°C)
56
60
0
-40
57
35
Temperature (°C)
TA = -40°C
50
VOUT = 2.85V
56
VIN = 6.0V
55
54
VIN = 3.85V
53
52
VIN = 3.3V
51
50
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
-40
-15
FIGURE 2-3:
Voltage.
DS21813F-page 4
Supply Current vs. Input
10
35
60
85
110
Temperature (°C)
Input Voltage (V)
FIGURE 2-6:
Temperature.
Supply Current vs.
2005-2013 Microchip Technology Inc.
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
0.40
VOUT = 3.30V
0.35
0.30
TA = +125°C
0.25
TA = +25°C
TA = -40°C
0.20
VOUT = 3.30V
0.35
Dropout Voltage (V)
Dropout Voltage (V)
0.40
0.15
0.10
0.05
0.00
IOUT = 150 mA
0.30
0.25
0.20
IOUT = 100 mA
0.15
0.10
IOUT = 50 mA
0.05
0.00
0
25
50
75
100
125
150
-40
-15
10
Load Current (mA)
Dropout Voltage vs. Output
Load Regulation (%)
-0.30
VOUT = 3.30V
IOUT = 0-150 mA
-0.35
VIN = 6.0V
-0.40
-0.45
-0.50
-0.55
VIN = 4.3V
-0.60
VIN = 4.0V
-0.65
FIGURE 2-10:
Temperature.
60
-0.70
85
110
59
Dropout Voltage vs.
VOUT = 3.30V
58
57
TA = +25°C
56
55
TA = +125°C
54
53
TA = -40°C
52
-40
-15
10
35
60
85
110
4.0
4.5
Temperature (°C)
FIGURE 2-8:
Temperature.
FIGURE 2-11:
Voltage.
2.869
VOUT = 3.30V
58
Output Voltage (V)
59
VIN = 6.0V
57
56
VIN = 4.3V
55
54
VIN = 4.0V
53
5.0
5.5
6.0
Input Voltage (V)
Load Regulation vs.
60
Supply Current (µA)
60
Temperature (°C)
Supply Current (µA)
FIGURE 2-7:
Current.
35
52
2.868
Supply Current vs. Input
VOUT = 2.85V
2.867
TA = -40°C
2.866
TA = +25°C
2.865
2.864
TA = +125°C
2.863
2.862
-40
-15
10
35
60
85
110
3.3 3.6 3.9
Supply Current vs.
2005-2013 Microchip Technology Inc.
5.1
5.4 5.7 6.0
Input Voltage (V)
Temperature (°C)
FIGURE 2-9:
Temperature.
4.2 4.5 4.8
FIGURE 2-12:
Voltage.
Output Voltage vs. Supply
DS21813F-page 5
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
2.870
2.866
VIN = 6.0V
2.864
2.862
2.860
VIN = 3.85V
2.858
VOUT = 2.85V
2.868
Output Voltage (V)
Output Voltage (V)
2.869
VOUT = 2.85V
2.868
2.856
2.854
VIN = 6.0V
2.867
VIN = 3.3V
2.866
2.865
VIN= 3.85V
2.864
2.863
2.862
0
25
50
75
100
125
150
-40
-15
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Output Voltage vs. Output
VOUT = 2.85V
FIGURE 2-16:
Temperature.
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
VIN = 3.85V
VOUT = 2.85V
CIN = 1 µF
COUT = 1 µF
IOUT = 40 mA
10
1
0.01
6.0
10
100
1000
PSRR (dB)
-10
-20
Shutdown Current vs. Input
FIGURE 2-17:
0
IOUT = 100 μA
COUT =1 μF X7R Ceramic
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
-30
-40
-10
-20
-60
-60
1
10
100
1000
Frequency (KHz)
FIGURE 2-15:
Power Supply Rejection
Ratio vs. Frequency.
DS21813F-page 6
1000000
Output Noise vs. Frequency.
IOUT = 1 mA
COUT = 1 μF X7R Ceramic
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
-40
-50
0.1
100000
-30
-50
-70
0.01
10000
Frequency (Hz)
PSRR (dB)
0
110
Output Voltage vs.
Input Voltage (V)
FIGURE 2-14:
Voltage.
85
0.1
TA = +25°C
3.3
60
100
TA = +125°C
Noise (µV/Hz)
Shutdown Current (µA)
FIGURE 2-13:
Current.
35
Temperature (°C)
Load Current (mA)
-70
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-18:
Power Supply Rejection
Ratio vs. Frequency.
2005-2013 Microchip Technology Inc.
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
0
-10
PSRR (dB)
-20
IOUT = 50 mA
COUT = 1μF X7R Ceramic
VINDC = 3.85V
VINAC = 100 mVp-p
VOUTDC = 2.85V
COUT
V IN = 3.85V
CIN = 10 µF
= 1 µF Ceramic
V OUT = 2.85V
-30
-40
-50
IOUT = 0.1 mA to 120 mA
-60
-70
-80
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-19:
Power Supply Rejection
Ratio vs. Frequency.
FIGURE 2-22:
Load Transient Response.
V OUT = 2.85V
COUT
V IN = 3.85V
CIN = 10 µF
= 1 µF Ceramic
Shutdow n Input
FIGURE 2-20:
Wake-Up Response.
V IN = 3.85V
CIN = 10 µF
COUT = 4.7 µF Ceramic
V OUT = 2.85V
IOUT = 0.1 mA to 120 mA
FIGURE 2-23:
Load Transient Response.
CIN = 0 µF
COUT = 1.0 µF Ceramic
ILOAD = 120 mA
V OUT = 2.85V
V IN = 3.85V
CIN = 10 µF
COUT = 4.7 µF Ceramic
V OUT = 2.85V
V IN = 3.85V to 4.85V
Shutdow n Input
FIGURE 2-21:
Wake-Up Response.
2005-2013 Microchip Technology Inc.
FIGURE 2-24:
Line Transient Response.
DS21813F-page 7
TC1017
Note: Unless otherwise noted, VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C.
CIN = 0 µF
COUT = 4.7 µF Ceramic
ILOAD = 120 mA
V IN = 4.3V to 5.3V
CIN = 0 µF
COUT = 1 µF Ceramic
ILOAD = 100 µA
V OUT = 2.85V
V IN = 3.85V to 4.85V
V OUT = 3.33V
FIGURE 2-25:
Line Transient Response.
V IN = 4.3V to 5.3V
FIGURE 2-26:
Line Transient Response.
CIN = 0 µF
COUT = 10 µF Ceramic
ILOAD = 100 µA
V OUT = 3.33V
FIGURE 2-27:
DS21813F-page 8
Line Transient Response.
2005-2013 Microchip Technology Inc.
TC1017
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
5-Pin SC-70
Pin No.
5-Pin SOT-23
5-Pin SC-70R
Symbol
1
3
SHDN
2
4
NC
3
2
GND
Ground Terminal
4
5
VOUT
Regulated Voltage Output
5
1
VIN
Unregulated Supply Input
3.1
Shutdown Control Input (SHDN)
Description
Shutdown Control Input
No Connect
3.3
Regulated Voltage Output (VOUT)
The regulator is fully enabled when a logic-high is
applied to SHDN. The regulator enters shutdown when
a logic-low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.05 µA (typ.)
Bypass the regulated voltage output to GND with a
minimum capacitance of 1 µF. A ceramic bypass
capacitor is recommended for best performance.
3.2
The minimum VIN has to meet two conditions in order
to ensure that the output maintains regulation:
VIN 2.7V and VIN [(VR + 2.5%) + VDROPOUT]. The
maximum VIN should be less than or equal to 6V.
Power dissipation may limit VIN to a lower potential in
order to maintain a junction temperature below 125°C.
Refer to Section 5.0 “Thermal Considerations”, for
determining junction temperature.
Ground Terminal
For best performance, it is recommended that the
ground pin be tied to a ground plane.
3.4
Unregulated Supply Input (VIN)
It is recommended that VIN be bypassed to GND with a
ceramic capacitor.
2005-2013 Microchip Technology Inc.
DS21813F-page 9
TC1017
4.0
DETAILED DESCRIPTION
perature is approximately 150°C and the P-channel is
turned on. If the internal power dissipation is still high
enough for the junction to rise to 160°C, it will again shut
off and cool. The maximum operating junction temperature of the device is 125°C. Steady-state operation at or
near the 160°C overtemperature point can lead to permanent damage of the device.
The TC1017 is a precision, fixed-output, linear voltage
regulator. The internal linear pass element is a
P-channel MOSFET. As with all P-channel CMOS
LDOs, there is a body drain diode with the cathode
connected to VIN and the anode connected to VOUT
(Figure 4-1).
The output voltage VOUT remains stable over the entire
input operating voltage range (2.7V to 6.0V) and the
entire load range (0 mA to 150 mA). The output voltage
is sensed through an internal resistor divider and
compared with a precision internal voltage reference.
Several fixed-output voltages are available by
changing the value of the internal resistor divider.
As is shown in Figure 4-1, the output voltage of the
LDO is sensed and divided down internally to reduce
external component count. The internal error amplifier
has a fixed bandgap reference on the inverting input
and the sensed output voltage on the non-inverting
input. The error amplifier output will pull the gate
voltage down until the inputs of the error amplifier are
equal to regulate the output voltage.
Figure 4-2 shows a typical application circuit. The
regulator is enabled any time the shutdown input pin is
at or above VIH. It is shut down (disabled) any time the
shutdown input pin is below VIL. For applications where
the SHDN feature is not used, tie the SHDN pin directly
to the input supply voltage source. While in shutdown,
the supply current decreases to 0.006 µA (typical) and
the P-channel MOSFET is turned off.
Output overload protection is implemented by sensing
the current in the P-channel MOSFET. During a shorted
or faulted load condition in which the output voltage
falls to less than 0.5V, the output current is limited to a
typical value of 120 mA. The current-limit protection
helps prevent excessive current from damaging the
Printed Circuit Board (PCB).
As shown in Figure 4-2, batteries have internal source
impedance. An input capacitor is used to lower the
input impedance of the LDO. In some applications, high
input impedance can cause the LDO to become
unstable. Adding more input capacitance can
compensate for this.
An internal thermal sensing device is used to monitor
the junction temperature of the LDO. When the sensed
temperature is over the set threshold of 160°C (typical),
the P-channel MOSFET is turned off. When the P-channel is off, the power dissipation internal to the device is
almost zero. The device cools until the junction tem-
1 SHDN
2 NC
VIN
SHDN VREF
Control
Error
Amp
Over
Temp.
TC1017 Block Diagram (5-Pin SC-70 Pinout).
BATTERY
DS21813F-page 10
VOUT 4
R1 R2
Feedback Resistors
1 SHDN
FIGURE 4-2:
Body
Diode
EA
+
3 GND
FIGURE 4-1:
VIN 5
Current Limit
RSOURCE
VIN 5
TC1017
CIN
1 µF Ceramic
COUT
1 µF Ceramic
2 NC
3 GND
VOUT 4
Load
Typical Application Circuit (5-Pin SC-70 Pinout).
2005-2013 Microchip Technology Inc.
TC1017
4.1
Input Capacitor
4.3
Low input source impedance is necessary for the LDO
to operate properly. When operating from batteries, or
in applications with long lead length (> 10") between
the input source and the LDO, some input capacitance
is required. A minimum of 0.1 µF is recommended for
most applications and the capacitor should be placed
as close to the input of the LDO as is practical. Larger
input capacitors will help reduce the input impedance
and further reduce any high-frequency noise on the
input and output of the LDO.
4.2
Output Capacitor
A minimum output capacitance of 1 µF for the TC1017
is required for stability. The Equivalent Series Resistance (ESR) requirements on the output capacitor are
between 0 and 2 ohms. The output capacitor should be
located as close to the LDO output as is practical.
Ceramic materials X7R and X5R have low temperature
coefficients and are well within the acceptable ESR
range required. A typical 1 µF X5R 0805 capacitor has
an ESR of 50 milli-ohms. Larger output capacitors can
be used with the TC1017 to improve dynamic behavior
and input ripple-rejection performance.
Ceramic, aluminum electrolytic or tantalum capacitor
types can be used. Since many aluminum electrolytic
capacitors freeze at approximately –30C, ceramic or
solid tantalums are recommended for applications
operating below –25C. When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
Turn-On Response
The turn-on response is defined as two separate
response categories, wake-up time (tWK) and settling
time (tS).
The TC1017 has a fast wake-up time (10 µsec, typical)
when released from shutdown. See Figure 4-3 for the
wake-up time designated as tWK. The wake-up time is
defined as the time it takes for the output to rise to 2%
of the VOUT value after being released from shutdown.
The total turn-on response is defined as the settling
time (tS) (see Figure 4-3). Settling time (inclusive with
tWK) is defined as the condition when the output is
within 98% of its fully-enabled value (32 µsec, typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions and
output capacitance on VOUT (RC response).
The table below demonstrates the typical turn-on
response timing for different input voltage power-up
frequencies: VOUT = 2.85V, VIN = 5.0V, IOUT = 60 mA
and COUT = 1 µF.
Frequency
Typical (tWK)
Typical (tS)
1000 Hz
5.3 µsec
14 µsec
500 Hz
5.9 µsec
16 µsec
100 Hz
9.8 µsec
32 µsec
50 Hz
14.5 µsec
52 µsec
10 Hz
17.2 µsec
77 µsec
VIH
VIL
SHDN
tS
98%
2%
VOUT
tWK
FIGURE 4-3:
Wake-Up Time from Shutdown.
2005-2013 Microchip Technology Inc.
DS21813F-page 11
TC1017
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when the die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
Given the following example:
3.0V to 4.1V
VOUT
=
2.85V ±2.5%
ILOAD
=
120 mA (output current)
TA
=
55°C (max. desired ambient)
Internal power dissipation:
Power Dissipation: SC-70
The TC1017 is available in the SC-70 package. The
thermal resistance for the SC-70 package is
approximately 450°C/W when the copper area used in
the PCB layout is similar to the JEDEC J51-7 high thermal conductivity standard or semi-G42-88 standard.
For applications with a larger or thicker copper area,
the thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application” (DS00792), for a method to
determine the thermal resistance for a particular application.
=
Find:
1.
5.2
VIN
P DMAX = VIN_MAX – V OUT_MIN I LOAD
= 4.1V – 2.85 0.975 120mA
= 158.5mW
2.
Maximum allowable ambient temperature:
T A_MAX = T J_MAX – P
R JA
DMAX
= 125 C – 158.5mW 450 C/W
= 125 C – 71 C
= 54 C
3.
Maximum allowable
desired ambient:
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steadystate junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-1:
PD = V IN – V OUT I LOAD + V IN I GND
The VIN x IGND term is typically very small when
compared to the (VIN–VOUT) x ILOAD term, simplifying
the power dissipation within the LDO to be:
EQUATION 5-2:
PD = VIN – VOUT I LOAD
To determine the maximum power
capability, the following equation is used:
dissipation
TJ_MAX = the maximum junction
temperature allowed
TA_MAX = the maximum ambient
temperature
= the thermal resistance from
junction to air
DS21813F-page 12
at
T J_MAX – T A
P D = -----------------------------R JA
125 C – 55 C
= ----------------------------------450 C/W
= 155mW
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised 71°C
over the ambient. The absolute maximum power
dissipation is 155 mW when given a maximum ambient
temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-1 and Figure 5-2 depict typical maximum
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient temperature, with a 1V input voltage to output voltage
differential, respectively.
Power Dissipation (mW)
T J_MAX – T A_MAX
= ---------------------------------------------R JA
Where:
RJA
dissipation
400
EQUATION 5-3:
P DMAX
power
350
300
250
200
150
100
50
0
-40
-15
10
35
60
85
110
Ambient Temperature (°C)
FIGURE 5-1:
Power Dissipation vs.
Ambient Temperature (SC-70 package).
2005-2013 Microchip Technology Inc.
TC1017
EQUATION 5-6:
T J_MAX – T A_MAX
P DMAX = ------------------------------------------------RJA
Maximum Current (mA)
160
VIN - VOUT = 1V
140
120
Where:
100
TJ_MAX = the maximum junction
temperature allowed
80
60
TA_MAX = the maximum ambient
temperature
40
20
0
-40
-15
10
35
60
85
RJA
110
= the thermal resistance from
junction to air
Ambient Temperature (°C)
FIGURE 5-2:
Maximum Current vs.
Ambient Temperature (SC-70 package).
5.3
Given the following example:
Power Dissipation: SOT-23
The TC1017 is also available in a SOT-23 package for
improved thermal performance. The thermal resistance
for the SOT-23 package is approximately 255°C/W
when the copper area used in the printed circuit board
layout is similar to the JEDEC J51-7 low thermal
conductivity standard or semi-G42-88 standard. For
applications with a larger or thicker copper area, the
thermal resistance can be lowered. See AN792, “A
Method to Determine How Much Power a SOT-23 Can
Dissipate in an Application” (DS00792), for a method to
determine the thermal resistance for a particular
application.
The TC1017 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steadystate junction temperature is rated at +125°C. The
power dissipation within the device is equal to:
EQUATION 5-4:
P D = V IN – V OUT I LOAD + V IN I GND
VIN =
3.0V to 4.1V
VOUT =
2.85V ±2.5%
ILOAD =
120 mA (output current)
TA =
+85°C (max. desired ambient)
Find:
1.
Internal power dissipation:
P DMAX = VIN_MAX – V OUT_MIN I LOAD
= 4.1V – 2.85 0.975 120mA
= 158.5mW
2.
Maximum allowable ambient temperature:
T A_MAX =
=
=
=
3.
T J_MAX – P DMAX R JA
125 C – 158.5mW 255 C/W
125 C – 40.5 C
84.5 C
Maximum allowable
desired ambient:
power
dissipation
at
T J_MAX – T A
P D = -----------------------------R JA
125 C – 85 C
= ----------------------------------255 C/W
= 157mW
The VIN x IGND term is typically very small when
compared to the (VIN–VOUT) x ILOAD term, simplifying the
power dissipation within the LDO to be:
EQUATION 5-5:
PD = VIN – VOUT I LOAD
To determine the maximum power
capability, the following equation is used:
2005-2013 Microchip Technology Inc.
dissipation
In this example, the TC1017 dissipates approximately
158.5 mW and the junction temperature is raised
40.5°C over the ambient. The absolute maximum
power dissipation is 157 mW when given a maximum
ambient temperature of +85°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in the
power dissipation equations.
Figure 5-3 and Figure 5-4 depict typical maximum
power dissipation versus ambient temperature, as well
as typical maximum current versus ambient temperature with a 1V input voltage to output voltage
differential, respectively.
DS21813F-page 13
TC1017
5.4
Power Dissipation (mW)
700
Layout Considerations
The primary path for heat conduction out of the SC-70/
SOT-23 package is through the package leads. Using
heavy, wide traces at the pads of the device will
facilitate the removal of the heat within the package,
thus lowering the thermal resistance RJA. By lowering
the thermal resistance, the maximum internal power
dissipation capability of the package is increased.
600
500
400
300
200
100
0
-40
-15
10
35
60
85
SHDN
110
Ambient Temperature (°C)
VIN
FIGURE 5-3:
Power Dissipation vs.
Ambient Temperature (SOT-23 Package).
U1
VOUT
C2
C1
Maximum Current (mA)
160
140
120
GND
VIN - VOUT = 1V
100
FIGURE 5-5:
Layout.
80
60
SC-70 Package Suggested
40
20
0
-40
-15
10
35
60
85
110
Ambient Temperature (°C)
FIGURE 5-4:
Maximum Current vs.
Ambient Temperature (SOT-23 Package).
DS21813F-page 14
2005-2013 Microchip Technology Inc.
TC1017
6.0
PACKAGE INFORMATION
6.1
Package Marking Information
5-Pin SC-70/SC-70R
TC1017 Pinout
Code
TC1017R Pinout
Code
TC1017 – 1.8VLT
CE
CU
TC1017 – 1.85VLT
CQ
DF
Part Number
X
X
N
Y
W
W
TC1017 – 1.9VLT
CB
TC1017 – 2.5VLT
CR
CV
TC1017 – 2.6VLT
CF
CW
TC1017 – 2.7VLT
CG
CX
OR
TC1017 – 2.8VLT
CH
CY
5-Pin SC-70/SC-70R
TC1017 – 2.85VLT
CJ
CZ
TC1017 – 2.9VLT
CK
DA
TC1017 – 3.0VLT
CL
DB
TC1017 – 3.2VLT
CC
DC
TC1017 – 3.3VLT
CM
DD
TC1017 – 4.0VLT
CP
DE
Bottom Side
Top Side
X
X
N
N
5-Lead SOT-23
Part Number
XXNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Code
TC1017 – 1.8VCT
DA
TC1017 – 1.85VCT
DK
TC1017 – 2.6VCT
DB
TC1017 – 2.7VCT
DC
TC1017 – 2.8VCT
DD
TC1017 – 2.85VCT
DE
TC1017 – 2.9VCT
DF
TC1017 – 3.0VCT
DG
TC1017 – 3.3VCT
DH
TC1017 – 4.0VCT
DJ
Example:
DANN
Customer-specific information*
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2005-2013 Microchip Technology Inc.
DS21813F-page 15
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