TC1054-3.3VCT713

TC1054/TC1055/TC1186 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and ERROR Output Features General Description • Low Ground Current for Longer Battery Life • Low Dropout Voltage • Choice of 50 mA (TC1054), 100 mA (TC1055) and 150 mA (TC1186) Output • High Output Voltage Accuracy • Standard or Custom Output Voltages: - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V • Power-Saving Shutdown Mode • ERROR Output Can Be Used as a Low-Battery Detector or Microcontroller-Reset Generator • Overcurrent and Overtemperature Protection • 5-Pin SOT-23 Package • Pin-Compatible Upgrades for Bipolar Regulators The TC1054, TC1055 and TC1186 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ CMOS construction minimizes ground current, extending battery life. Total supply current is typically 50 µA at full load (20 to 60 times lower than in bipolar regulators). Applications • • • • • • • Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular/GSM/PHS Phones Linear Post-Regulators for SMPS Pagers The TC1054, TC1055 and TC1186 are stable with an output capacitor of only 1 µF, and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. For higher output current regulators, please refer to the TC1173 (IOUT = 300 mA) data sheet (DS21632). Typical Application VIN 1 2 3 Package Type VOUT 5 VIN TC1054 TC1055 TC1186 GND SHDN The devices’ key features include low noise operation, low dropout voltage – typically 85 mV (TC1054), 180 mV (TC1055) and 270 mV (TC1186) at full load — and fast response to step changes in load. An error output (ERROR) is asserted when the devices are out-of-regulation (due to a low input voltage or excessive output current). ERROR can be used as a low battery warning or as a processor RESET signal (with the addition of an external RC network). Supply current is reduced to 0.5 µA (maximum), with both VOUT and ERROR disabled when the shutdown input is low. The devices incorporate both overtemperature and over-current protection. VOUT + 1 µF 5-Pin SOT-23 VOUT ERROR 5 TC1054 TC1055 TC1186 1 M ERROR 4 4 ERROR 1 2 3 VIN GND SHDN Note: 5-Pin SOT-23 is equivalent to the EIAJ (SC-74A) Shutdown Control (from Power Control Logic)  2002-2012 Microchip Technology Inc. DS21350E-page 1 TC1054/TC1055/TC1186 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Input Voltage ..................................................................6.75V Output Voltage ..................................... (-0.3V) to (VIN + 0.3V) Power Dissipation ......................... Internally Limited (Note 6) Maximum Voltage on Any Pin ...................VIN +0.3V to -0.3V Operating Junction Temperature Range .. -40°C VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Input Operating Voltage Maximum Output Current Output Voltage Sym Min Typ Max VIN 2.7 — 6.50 V Note 8 IOUTMAX 50 — — mA TC1054 100 — — TC1055 150 — — TC1186 VOUT VOUT Temperature Coefficient TCVOUT VR – 2.5% VR ±0.5% VR + 2.5% — 20 — Units V Conditions Note 1 ppm/°C Note 2 — 40 — VOUT/VIN — 0.05 0.35 % (VR + 1V) VIN6V TC1054; TC1055 VOUT/VOUT — 0.5 2 % — 0.5 3 (Note 3) IL = 0.1 mA to IOUTMAX Line Regulation Load Regulation TC1186 Note 1: 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN)x 106 VOUT x T 3: 4: 5: 6: 7: 8: 9: Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0 “Thermal Considerations” for more details. Hysteresis voltage is referenced by VR. The minimum VIN has to justify the conditions: VIN  VR + VDROPOUT and VIN  2.7V for IL = 0.1 mA to IOUTMAX. Apply for junction temperatures of -40°C to +85°C. DS21350E-page 2  2002-2012 Microchip Technology Inc. TC1054/TC1055/TC1186 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. Boldface type specifications apply for junction temperatures of -40°C to +125°C. Parameters Dropout Voltage Sym Min Typ Max Units VIN – VOUT — 2 — mV — 65 — TC1055; TC1186 Conditions IL = 100 µA IL = 20 mA — 85 120 IL = 50 m — 180 250 IL = 100 mA — 270 400 IIN — 50 80 µA SHDN = VIH, IL = 0 µA (Note 9) IINSD — 0.05 0.5 µA SHDN = 0V Power Supply Rejection Ratio PSRR — 64 — dB f 1 kHz Output Short Circuit Current IOUTSC — 300 450 mA VOUT = 0V Thermal Regulation VOUT/PD — 0.04 — V/W Notes 5, 6 Thermal Shutdown Die Temperature TSD — 160 — °C TC1186 Supply Current Shutdown Supply Current IL = 150 mA (Note 4) TSD — 10 — eN — 260 — SHDN Input High Threshold VIH 45 — — %VIN VIN = 2.5V to 6.5V SHDN Input Low Threshold VIL — — 15 %VIN VIN = 2.5V to 6.5V VINMIN 1.0 — — V VOL — — 400 mV Thermal Shutdown Hysteresis Output Noise °C nV/Hz IL = IOUTMAX SHDN Input ERROR Output Minimum VIN Operating Voltage Output Logic Low Voltage 1 mA Flows to ERROR ERROR Threshold Voltage VTH — 0.95 x VR — V ERROR Positive Hysteresis VHYS — 50 — mV Note 7 VOUT to ERROR Delay tDELAY — 2.5 — ms VOUT falling from VR to VR – 10% Note 1: 2: See Figure 4-2 VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. TC VOUT = (VOUTMAX – VOUTMIN)x 106 VOUT x T 3: 4: 5: 6: 7: 8: 9: Regulation is measured at a constant junction temperature using low-duty-cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. See Section 5.0 “Thermal Considerations” for more details. Hysteresis voltage is referenced by VR. The minimum VIN has to justify the conditions: VIN  VR + VDROPOUT and VIN  2.7V for IL = 0.1 mA to IOUTMAX. Apply for junction temperatures of -40°C to +85°C.  2002-2012 Microchip Technology Inc. DS21350E-page 3 TC1054/TC1055/TC1186 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. 0.100 0.020 ILOAD = 10 mA 0.090 DROPOUT VOLTAGE (V) DROPOUT VOLTAGE (V) 0.018 0.016 0.014 0.012 0.010 0.008 0.006 0.004 CIN = 1 μF COUT = 1 μF 0.002 0.060 0.050 0.040 0.030 0.020 CIN = 1 μF COUT = 1 μF 0.000 -40 -20 0 20 50 TEMPERATURE (°C) 70 125 -40 ILOAD = 100 mA DROPOUT VOLTAGE (V) 0.140 0.120 0.100 0.080 0.060 0.020 CIN = 1 μF COUT = 1 μF 125 0.250 0.200 0.150 0.100 0.050 CIN = 1 μF COUT = 1 μF 0.000 0.000 -40 -20 0 20 50 70 125 -40 -20 TEMPERATURE (°C) FIGURE 2-2: Dropout Voltage vs. Temperature (ILOAD = 100 mA). 0 20 50 TEMPERATURE (°C) 70 125 FIGURE 2-5: Dropout Voltage vs. Temperature (ILOAD = 150 mA). 90 90 ILOAD = 10 mA 80 70 60 50 40 30 20 CIN = 1 μF COUT = 1 μF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) FIGURE 2-3: (ILOAD = 10 mA). DS21350E-page 4 Ground Current vs. VIN ILOAD = 100 mA 80 GND CURRENT (μA) GND CURRENT (μA) 70 ILOAD = 150 mA 0.160 0.040 0 20 50 TEMPERATURE (°C) 0.300 0.200 0.180 -20 FIGURE 2-4: Dropout Voltage vs. Temperature (ILOAD = 50 mA). FIGURE 2-1: Dropout Voltage vs. Temperature (ILOAD = 10 mA). DROPOUT VOLTAGE (V) 0.070 0.010 0.000 ILOAD = 50 mA 0.080 70 60 50 40 30 20 CIN = 1 μF COUT = 1 μF 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) FIGURE 2-6: (ILOAD = 100 mA). Ground Current vs. VIN  2002-2012 Microchip Technology Inc. TC1054/TC1055/TC1186 Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. 80 3.5 70 3 60 2.5 50 VOUT (V) GND CURRENT (μA) ILOAD = 0 ILOAD = 150 mA 40 30 2 1.5 1 20 CIN = 1 μF COUT = 1 μF 10 0.5 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VIN (V) FIGURE 2-7: (ILOAD = 150 mA). Ground Current vs. VIN 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) FIGURE 2-10: (ILOAD = 0 mA). 3.5 3.0 CIN = 1 μF COUT = 1 μF 0 VOUT vs. VIN 3.320 ILOAD = 100 mA ILOAD = 10 mA 3.315 3.310 3.305 VOUT (V) VOUT (V) 2.5 2.0 1.5 3.300 3.295 3.290 1.0 CIN = 1 μF COUT = 1 μF VIN = 4.3V 3.285 0.5 CIN = 1 μF COUT = 1 μF 0.0 0 3.280 3.275 -40 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VIN (V) FIGURE 2-8: (ILOAD = 100 mA). VOUT vs. VIN -20 -10 0 20 40 85 125 TEMPERATURE (°C) FIGURE 2-11: Output Voltage (3.3V) vs. Temperature (ILOAD = 10 mA). 3.290 3.288 5.025 ILOAD = 150 mA 5.020 3.284 3.282 3.280 3.278 3.276 ILOAD = 10 mA 5.015 VOUT (V) VOUT (V) 3.286 5.010 5.005 5.000 4.995 CIN = 1 μF COUT = 1 μF VIN = 4.3V 4.990 4.985 3.274 VIN = 6V CIN = 1 μF COUT = 1 μF -40 -40 -20 -10 0 20 40 85 125 -20 -10 0 20 40 85 125 TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-9: (ILOAD = 150 mA). VOUT vs. VIN  2002-2012 Microchip Technology Inc. FIGURE 2-12: Output Voltage (5V) vs. Temperature (ILOAD = 10 mA). DS21350E-page 5 TC1054/TC1055/TC1186 Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. 10.0 RLOAD = 50 Ω COUT = 1 μF CIN = 1 μF 4.994 4.992 ILOAD = 150 mA NOISE (μV/√Hz) VOUT (V) 4.990 4.988 4.986 4.984 4.982 4.980 4.978 4.976 VIN = 6V CIN = 1 μF COUT = 1 μF 1.0 0.1 4.974 -40 -20 -10 0 20 40 85 125 0.0 0.01K 0.1K TEMPERATURE (°C) FIGURE 2-13: Output Voltage (5V) vs. Temperature (ILOAD = 10 mA). FIGURE 2-16: 1K 10K 100K 1000K FREQUENCY (Hz) Output Noise vs. Frequency. 1000 COUT = 1 μF to 10 μF 70 ILOAD = 10 mA 100 50 COUT ESR (Ω) GND CURRENT (μA) 60 40 30 20 10 VIN = 6V CIN = 1 μF COUT = 1 μF -20 Stable Region 1 0.1 0 -40 10 -10 0 20 40 TEMPERATURE (°C) 85 0.01 125 FIGURE 2-14: GND Current vs. Temperature (ILOAD = 10 mA). 0 10 20 30 40 50 60 70 80 90 100 LOAD CURRENT (mA) FIGURE 2-17: Current. Stability Region vs. Load 80 GND CURRENT (μA) 70 ILOAD = 150 mA VSHDN 60 50 40 30 20 10 VIN = 6V CIN = 1 μF COUT = 1 μF VOUT 0 -40 -20 -10 0 20 40 85 125 TEMPERATURE (°C) FIGURE 2-15: GND Current vs. Temperature (ILOAD = 150 mA). Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA, VIN = 4.3V, Temperature = +25°C, Fall Time = 184 µs FIGURE 2-18: LDO. DS21350E-page 6 Measure Rise Time of 3.3V  2002-2012 Microchip Technology Inc. TC1054/TC1055/TC1186 Note: Unless otherwise indicated, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C. VSHDN VSHDN VOUT VOUT Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA, VIN = 6V, Temperature = +25°C, Fall Time = 192 µs FIGURE 2-19: LDO. Measure Rise Time of 5.0V Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA, VIN = 4.3V, Temperature = +25°C, Fall Time = 52 µs FIGURE 2-21: LDO. Measure Fall Time of 3.3V VSHDN VOUT VOUT Conditions: VIN = 6V, CIN = 0 µF, COUT = 1 µF ILOAD was increased until temperature of die reached about +160°C, at which time integrated thermal protection circuitry shuts the regulator off when die temperature exceeds approximately +160°C. The regulator remains off until die temperature drops to approximately +150°C. Conditions: CIN = 1 µF, COUT = 1 µF, ILOAD = 100 mA, VIN = 6V, Temperature = +25°C, Fall Time = 88 µs FIGURE 2-22: LDO. Measure Fall Time of 5.0V FIGURE 2-20: Thermal Shutdown Response of 5.0V LDO.  2002-2012 Microchip Technology Inc. DS21350E-page 7 TC1054/TC1055/TC1186 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. SOT-23 3.1 PIN FUNCTION TABLE Symbol 1 VIN 2 GND 3 SHDN 4 ERROR 5 VOUT Description Unregulated supply input Ground terminal Shutdown control input Out-of-Regulation Flag (Open-drain output) Regulated voltage output Unregulated Supply Input (VIN) Connect unregulated input supply to the VIN pin. If there is a large distance between the input supply and the LDO regulator, some input capacitance is necessary for proper operation. A 1 µF capacitor connected from VIN to ground is recommended for most applications. 3.3 The regulator is fully enabled when a logic-high is applied to SHDN. The regulator enters shutdown when a logic-low is applied to SHDN. During shutdown, output voltage falls to zero, ERROR is open-circuited and supply current is reduced to 0.5 µA (maximum). 3.4 3.2 Ground Terminal (GND) Connect the unregulated input supply ground return to GND. Also connect the negative side of the 1 µF typical input decoupling capacitor close to GND and the negative side of the output capacitor COUT to GND. DS21350E-page 8 Shutdown Control Input (SHDN) Out Of Regulation Flag (ERROR) ERROR goes low when VOUT is out-of-tolerance by approximately -5%. 3.5 Regulated Voltage Output (VOUT) Connect the output load to VOUT of the LDO. Also connect the positive side of the LDO output capacitor as close as possible to the VOUT pin.  2002-2012 Microchip Technology Inc. TC1054/TC1055/TC1186 4.0 DETAILED DESCRIPTION The TC1054, TC1055 and TC1186 are precision fixed output voltage regulators (If an adjustable version is desired, please see the TC1070/TC1071/TC1187 data sheet (DS21353)). Unlike bipolar regulators, the TC1054, TC1055 and TC1186 supply current does not increase with load current. Figure 4-1 shows a typical application circuit, where the regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and shutdown (disabled) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in Shutdown, supply current decreases to 0.05 µA (typical), VOUT falls to zero volts, and ERROR is opencircuited. + + 1 µF Battery VIN VOUT TC1054 TC1055 TC1186 + VOUT 1 µF C1 4.1 ERROR is driven low whenever VOUT falls out of regulation by more than -5% (typical). This condition may be caused by low input voltage, output current limiting or thermal limiting. The ERROR threshold is 5% below rated VOUT, regardless of the programmed output voltage value (e.g. ERROR = VOL at 4.75V (typical) for a 5.0V regulator and 2.85V (typical) for a 3.0V regulator). ERROR output operation is shown in Figure 4-2. Note that ERROR is active when VOUT falls to VTH and inactive when VOUT rises above VTH by VHYS. As shown in Figure 4-1, ERROR can be used either as a battery low flag or as a processor RESET signal (with the addition of timing capacitor C2). R1 x C2 should be chosen to maintain ERROR below VIH of the processor RESET input for at least 200 ms to allow time for the system to stabilize. Pull-up resistor R1 can be tied to VOUT, VIN or any other voltage less than (VIN + 0.3V). VOUT GND SHDN HYSTERESIS (VH) VTH ERROR Shutdown Control (to CMOS Logic or Tie to VIN if unused) C2 Required Only if ERROR is used as a Processor RESET Signal (see Text) FIGURE 4-1: ERROR Open-Drain Output V+ R1 1 MΩ BATTLOW or RESET 0.2 µF C2 Typical Application Circuit.  2002-2012 Microchip Technology Inc. tDELAY ERROR VIH VOL FIGURE 4-2: 4.2 Error Output Operation. Output Capacitor A 1 µF (minimum) capacitor from VOUT to ground is recommended. The output capacitor should have an effective series resistance greater than 0.1 and less than 10.0, with a resonant frequency above 1 MHz. A 1 µF capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and the AC filter capacitor, or if a battery is used as the power source. Aluminum electrolytic or tantalum capacitor types can be used (since many aluminum electrolytic capacitors freeze at approximately -30°C, solid tantalums are recommended for applications operating below -25°C). When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. DS21350E-page 9 TC1054/TC1055/TC1186 5.0 THERMAL CONSIDERATIONS 5.1 Thermal Shutdown Integrated thermal protection circuitry shuts the regulator off when die temperature exceeds +160°C. The regulator remains off until the die temperature drops to approximately +150°C. 5.2 Power Dissipation The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and output current. The following equation is used to calculate worst-case actual power dissipation: EQUATION 5-1: Equation 5-1 can be used in conjunction with Equation 5-2 to ensure regulator thermal operation is within limits. For example: Given: VINMAX = 3.0V +5% VOUTMIN = 2.7V – 2.5% ILOADMAX = 40 mA TJMAX = +125°C TAMAX = +55°C Find: PD   V INMAX – VOUTMIN ILOADMAX =   3.0  1.05  –  2.7  0.975  40  10 Where: PD = Worst-case actual power dissipation VOUTmin = Minimum regulator output voltage EQUATION 5-2:  T JMAX – T AMAX  P DMAX = ------------------------------------------- JA Where all terms are previously defined. DS21350E-page 10 -3 = 20.7mW Maximum allowable power dissipation:  T JMAX – T AMAX  PDMAX = -------------------------------------------- ILOADmax = Maximum output (load) current The maximum allowable power dissipation (Equation 5-2) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) and the thermal resistance from junction-to-air (JA). The 5-Pin SOT-23 package has a JA of approximately 220°C/Watt. Actual power dissipation Maximum allowable dissipation Actual power dissipation: PD   V INMAX – VOUTMIN ILOADMAX VINmax = Maximum voltage on VIN 1. 2. JA  125 – 55  = ------------------------220 = 318mW In this example, the TC1054 dissipates a maximum of 20.7 mW; below the allowable limit of 318 mW. In a similar manner, Equation 5-1 and Equation 5-2 can be used to calculate maximum current and/or input voltage limits. 5.3 Layout Considerations The primary path of heat conduction out of the package is via the package leads. Layouts having a ground plane, wide traces at the pads and wide power supply bus lines, combine to lower θJA and increase the maximum allowable power dissipation limit.  2002-2012 Microchip Technology Inc. TC1054/TC1055/TC1186 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 5-Lead SOT-23 Example XXNN Legend: XX...X Y YY WW NNN e3 * Note: CY25 (V) TC1054 Code TC1055 Code TC1186 Code 1.8 CYNN DYNN PYNN 2.5 C1NN D1NN P1NN 2.6 CTNN DTNN PVNN 2.7 C2NN D2NN P2NN 2.8 CZNN DZNN PZNN 2.85 C8NN D8NN P8NN 3.0 C3NN D3NN P3NN 3.3 C4NN D4NN P5NN 3.6 C9NN D9NN P9NN 4.0 C0NN D0NN P0NN 5.0 C6NN D6NN P7NN Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2002-2012 Microchip Technology Inc. DS21350E-page 11 TC1054/TC1055/TC1186 /HDG3ODVWLF6PDOO2XWOLQH7UDQVLVWRU&7>627@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ b N E E1 3 2 1 e e1 D A2 A c φ A1 L L1 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV 0,//,0(7(56 0,1 120 0$; 1  /HDG3LWFK H %6& 2XWVLGH/HDG3LWFK H 2YHUDOO+HLJKW $  ± 0ROGHG3DFNDJH7KLFNQHVV $  ±  6WDQGRII $  ±  2YHUDOO:LGWK (  ±  0ROGHG3DFNDJH:LGWK (  ±  2YHUDOO/HQJWK '  ±  )RRW/HQJWK /  ±  )RRWSULQW /  ±  )RRW$QJOH I ƒ ± ƒ /HDG7KLFNQHVV F  ±  %6&  /HDG:LGWK E  ±  1RWHV  'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGPPSHUVLGH  'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(