TC2320
N-Channel and P-Channel Enhancement-Mode Dual MOSFET
Features
General Description
•
•
•
•
•
•
•
The TC2320 consists of a high-voltage, low-threshold
N-channel and P-channel MOSFET in an 8-Lead SOIC
package. This Enhancement-mode (normally-off)
transistor uses an advanced vertical DMOS structure
and a well-proven silicon gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
Low Threshold
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
Free from Secondary Breakdown
Low Input and Output Leakage
Independent, Electrically Isolated N-Channel and
P-Channel
Applications
•
•
•
•
•
•
•
Microchip’s vertical DMOS FETs are ideally suited for a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
Medical Ultrasound Transmitters
High-Voltage Pulsers
Amplifiers
Buffers
Piezoelectric Transducer Drivers
General Purpose Line Drivers
Logic-Level Interface
Package Type
8-lead SOIC
(Top view)
DN
DN
DP
DP
SN
GN
SP
GP
See Table 2-1 for pin information.
2017-2021 Microchip Technology Inc.
DS20005708B-page 1
TC2320
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ....................................................................................................................................... BVDSS
Drain-to-Gate Voltage .......................................................................................................................................... BVDGS
Gate-to-Source Voltage.......................................................................................................................................... ±20V
Operating Ambient Temperature, TA .................................................................................................... –55°C to +150°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = TJ = +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Drain-to-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Unit
Conditions
200
—
—
V
VGS = 0V, ID = 100 µA
0.6
—
2
V
VGS = VDS, ID = 1 mA
ΔVGS(th)
—
—
–4.5
IGSS
—
—
100
DC PARAMETER (Note 1)
Change in VGS(th) with Temperature
Gate Body Leakage Current
mV/°C VGS = VDS, ID = 1 mA (Note 2)
nA
VGS = ±20V, VDS = 0V
—
—
1
µA
VGS = 0V, VDS = 100V
—
—
10
µA
VGS = 0V, VDS = Maximum rating
—
—
1
mA
VGS = 0V, TA = 125°C,
VDS = 0.8 Maximum rating
(Note 2)
0.6
—
—
A
VGS = 4.5V, VDS = 25V
1.2
—
—
A
VGS = 10V, VDS = 25V
—
—
8
Ω
VGS = 4.5V, ID = 150 mA
—
—
7
Ω
VGS = 10V, ID = 1A
ΔRDS(ON)
—
—
1
%/°C
Forward Transconductance
GFS
150
—
—
mmho VDS = 25V, ID = 200 mA
Input Capacitance
CISS
—
—
110
pF
Common Source Output Capacitance
COSS
—
—
60
pF
Reverse Transfer Capacitance
CRSS
—
—
23
pF
Turn-On Delay Time
td(ON)
—
—
20
ns
tr
—
—
15
ns
td(OFF)
—
—
25
ns
tf
—
—
25
ns
VSD
—
—
1.8
V
trr
—
300
—
ns
Zero-Gate Voltage Drain Current
On-State Drain Current
Static Drain-to-Source On-State
Resistance
Change in RDS(ON) with
Temperature
IDSS
ID(ON)
RDS(ON)
VGS = 4.5V, ID = 150 mA (Note 2)
AC PARAMETER (Note 2)
Rise Time
Turn-Off Delay Time
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
Note 1:
2:
VGS = 0V,
VDS = 25V,
f = 1 MHz
VDD = 25V,
ID = 150 mA,
RGEN = 25Ω
VGS = 0V, ISD = 200 mA (Note 1)
VGS = 0V, ISD = 200 mA (Note 2)
Unless otherwise stated, all DC parameters are 100% tested at +25°C.
Pulse test: 300 µs pulse, 2% duty cycle.
Specification is obtained by characterization and is not 100% tested.
DS20005708B-page 2
2017-2021 Microchip Technology Inc.
TC2320
P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = TJ = +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Drain-to-Source Breakdown Voltage
BVDSS
–200
—
—
V
VGS = 0V, ID = –2 mA
Gate Threshold Voltage
VGS(th)
–1
—
–2.4
V
VGS = VDS, ID = –1 mA
ΔVGS(th)
—
—
4.5
IGSS
—
—
–100
nA
VGS = ±20V, VDS = 0V
—
—
–10
µA
VGS = 0V,
VDS = Maximum rating
—
—
–1
mA
VGS = 0V, TA = 125°C,
VDS = 0.8 Maximum rating
(Note 2)
DC PARAMETER (Note 1)
Change in VGS(th) with Temperature
Gate Body Leakage
Zero-Gate Voltage Drain Current
On-State Drain Current
IDSS
ID(ON)
mV/°C VGS = VDS, ID = –1 mA (Note 2)
–0.25 –0.7
—
A
VGS = –4.5V, VDS = –25V
–0.75 –2.1
—
A
VGS = –10V, VDS = –25V
—
10
15
Ω
VGS = –4.5V, ID = –100 mA
—
8
12
Ω
VGS = –10V, ID = –200 mA
ΔRDS(ON)
—
—
1.7
%/°C
VGS = –10V, ID = –200 mA
(Note 2)
Forward Transconductance
GFS
100
250
—
mmho VDS = –25V, ID = –200 mA
Input Capacitance
CISS
—
75
125
pF
Common-Source Output Capacitance
COSS
—
20
85
pF
Reverse Transfer Capacitance
CRSS
—
10
35
pF
Turn-On Delay Time
td(ON)
—
—
10
ns
tr
—
—
15
ns
td(OFF)
—
—
20
ns
tf
—
—
15
ns
VSD
—
—
–1.8
V
trr
—
300
—
ns
Static Drain-to-Source On-State
Resistance
RDS(ON)
Change in RDS(ON) with
Temperature
AC PARAMETER (Note 2)
Rise Time
Turn-On Delay Time
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
Note 1:
2:
VGS = 0V,
VDS = –25V,
f = 1 MHz
VDD = –25V,
ID = –0.75A,
RGEN = 25Ω
VGS = 0V, ISD = –0.5A (Note 1)
VGS = 0V, ISD = –0.5A (Note 2)
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Operating Ambient Temperature
TA
–55
—
+150
°C
Storage Temperature
TS
–55
—
+150
°C
JA
—
101
—
°C/W
Conditions
TEMPERATURE RANGE
PACKAGE THERMAL RESISTANCE
8-lead SOIC
Note 1: 1 oz., four-layer, 3” x 4” PCB
2017-2021 Microchip Technology Inc.
Note 1
DS20005708B-page 3
TC2320
2.0
PIN DESCRIPTION
Table 2-1 shows the description of pins in TC2320.
Refer to Package Type for the location of pins.
TABLE 2-1:
Pin Number
PIN FUNCTION TABLE
Pin Name
Description
1
SN
Source N-channel
2
GN
Gate N-channel
3
SP
Source P-channel
4
GP
Gate P-channel
5
DP
Drain P-channel
6
DP
Drain P-channel
7
DN
Drain N-channel
8
DN
Drain N-channel
DS20005708B-page 4
2017-2021 Microchip Technology Inc.
TC2320
3.0
FUNCTIONAL DESCRIPTION
Figure 3-1 and Figure 3-2 illustrate the switching
waveforms and test circuits for TC2320.
10V
VDD
90%
INPUT
0V
Pulse
Generator
10%
t(OFF)
t(ON)
tr
td(ON)
VDD
10%
10%
Input
OUTPUT
FIGURE 3-1:
D.U.T.
90%
90%
0V
OUTPUT
RGEN
tf
td(OFF)
RL
N-Channel Switching Waveforms and Test Circuit.
0V
Pulse
Generator
10%
INPUT
RGEN
90%
-10V
t(OFF)
t(ON)
td(ON)
tr
0V
90%
D.U.T.
Input
tf
td(OFF)
OUTPUT
90%
RL
OUTPUT
10%
VDD
FIGURE 3-2:
TABLE 3-1:
10%
VDD
P-Channel Switching Waveforms and Test Circuit.
PRODUCT SUMMARY
RDS(ON)
(Maximum)
(Ω)
BVDSS/BVDGS
(V)
N-Channel
P-Channel
N-Channel
P-Channel
200
–200
7
12
2017-2021 Microchip Technology Inc.
DS20005708B-page 5
TC2320
4.0
PACKAGING INFORMATION
4.1
Package Marking Information
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005708B-page 6
8-lead SOIC
Example
XXXXXXXX
e3 YYWW
NNN
TC2320TG
e3 2137
896
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2017-2021 Microchip Technology Inc.
TC2320
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2017-2021 Microchip Technology Inc.
DS20005708B-page 7
TC2320
NOTES:
DS20005708B-page 8
2017-2021 Microchip Technology Inc.
TC2320
APPENDIX A:
REVISION HISTORY
Revision A (June 2017)
• Converted Supertex Doc# DSFP-TC2320 to
Microchip DS20005708A
• Changed packaging format
• Changed the packaging quantity of the 8-lead
SOIC TG package from 2000/Reel to 3300/Reel
• Made minor text changes throughout the
document
Revision B (March 2021)
• Corrected the On-State Drain Current VDS condition and changed the value from –5V to –25V
• Made minor text changes throughout the
document
2017-2021 Microchip Technology Inc.
DS20005708B-page 9
TC2320
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
-
Package
Options
Device
X
-
Environmental
X
Media Type
Device:
TC2320
=
N-Channel and P-Channel
Enhancement-Mode Dual MOSFET
Package:
TG
=
8-lead SOIC
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Type:
(blank)
=
3300/Reel for a TG Package
DS20005708B-page 10
Example:
a) TC2320TG-G:
N-Channel and P-Channel
Enhancement-Mode Dual MOSFET,
8-lead SOIC, 3300/Reel
2017-2021 Microchip Technology Inc.
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DS20005708B-page 11
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