TC4421/TC4422
9A High-Speed MOSFET Drivers
Features:
General Description:
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A Maximum
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Propagation Delays: 30 ns (Typical)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (Typical)
- With Logic ‘0’ Input – 55 µA (Typical)
• Low Output Impedance: 1.4 (Typical)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs up to 5V
• Pin-Compatible with the TC4420/TC4429
6A MOSFET Driver
• Space-saving 8-Pin 6x5 DFN-S Package
TC4421/TC4422 are high-current buffers/drivers
capable of driving large MOSFETs and IGBTs.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1A inductive current of either polarity
being forced back into their outputs. In addition, all
terminals are fully protected against up to 4 kV of
electrostatic discharge.
The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages and four operating temperature range
offerings, the TC4421/TC4422 family of 9A MOSFET
drivers fits into any application where high gate/line
capacitance drive is required.
Applications:
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power ON/OFF Switch
Motor and Solenoid Driver
Package Types(1)
8-Pin PDIP/ TC4421 TC4422
SOIJ
VDD
INPUT
NC
GND
1
2
3
4
8
7
6
5
VDD
VDD
OUTPUT OUTPUT
OUTPUT OUTPUT
GND
GND
8-Pin 6x5 DFN-S(2) TC4421 TC4422
VDD
1
INPUT
2
NC
3
GND
4
EP
9
5-Pin TO-220
Tab is
Common
to VDD
VDD
8
VDD
7
OUTPUT OUTPUT
6
OUTPUT OUTPUT
5
GND
GND
TC4421
TC4422
2: Includes electrically isolated Exposed Thermal Pad (EP), see Table 3-1.
2002-2013 Microchip Technology Inc.
INPUT
GND
VDD
GND
OUTPUT
Note 1: Duplicate pins must both be connected for proper operation.
DS20001420F-page 1
TC4421/TC4422
Functional Block Diagram
VDD
TC4421
Inverting
200 µA
300 mV
Output
TC4422
Non-Inverting
Input
4.7V
GND
Effective
Input
C = 25 pF
DS20001420F-page 2
2002-2013 Microchip Technology Inc.
TC4421/TC4422
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)................................... 50 mA
Package Power Dissipation (TA 70°C)
5-Pin TO-220 .................................................... 1.6W
DFN-S .......................................................... Note 2
PDIP ............................................................ 730 mW
SOIJ ............................................................ 750 mW
Package Power Dissipation (TA 25°C)
5-Pin TO-220 (with heatsink).......................... 12.5W
Thermal Impedances (to case)
5-Pin TO-220 RJ-C ...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High-Input Voltage
VIH
2.4
1.8
—
V
Logic ‘0’, Low-Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–10
—
+10
µA
0V VIN VDD
VOH
VDD – 0.025
—
—
V
DC test
Input
Output
High-Output Voltage
Low-Output Voltage
VOL
—
—
0.025
V
DC test
Output Resistance, High
ROH
—
1.4
—
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
0.9
1.7
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
9.0
—
A
VDD = 18V
Continuous Output Current
IDC
2
—
—
A
10V VDD 18V, TA = +25°C
(TC4421/TC4422 CAT only) (Note 3)
Latch-Up Protection
Withstand Reverse Current
IREV
—
> 1.5
—
A
Duty cycle 2%, t 300 µsec
Switching Time (Note 1)
Rise Time
tR
—
60
75
ns
Figure 4-1, CL = 10,000 pF
Fall Time
tF
—
60
75
ns
Figure 4-1, CL = 10,000 pF
Delay Time
tD1
—
30
60
ns
Figure 4-1
Delay Time
tD2
—
33
60
ns
Figure 4-1
IS
—
0.2
1.5
mA
VIN = 3V
—
55
150
µA
VIN = 0V
VDD
4.5
—
18
V
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
3:
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
Tested during characterization, not production tested.
2002-2013 Microchip Technology Inc.
DS20001420F-page 3
TC4421/TC4422
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V VDD 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High-Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low-Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
–10
—
+10
µA
0V VIN VDD
High-Output Voltage
VOH
VDD – 0.025
—
—
V
DC TEST
Low-Output Voltage
VOL
—
—
0.025
V
DC TEST
Output Resistance, High
ROH
—
2.4
3.6
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
1.8
2.7
IOUT = 10 mA, VDD = 18V
tR
—
60
120
ns
Figure 4-1, CL = 10,000 pF
Fall Time
tF
—
60
120
ns
Figure 4-1, CL = 10,000 pF
Delay Time
tD1
—
50
80
ns
Figure 4-1
Delay Time
tD2
—
65
80
ns
Figure 4-1
mA
Input
Output
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
IS
VDD
—
—
3
—
—
0.2
4.5
—
18
VIN = 3V
VIN = 0V
V
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Sym
Min
Typ
Max
Units
Specified Temperature Range (C)
TA
0
—
+70
°C
Specified Temperature Range (E)
TA
–40
—
+85
°C
Specified Temperature Range (V)
TA
–40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
–65
—
+150
°C
Thermal Resistance, 5L-TO-220
JA
—
39.5
—
°C/W
Thermal Resistance, 8L-6x5 DFN-S
JA
—
35.7
—
°C/W
Thermal Resistance, 8L-PDIP
JA
—
89.3
—
°C/W
Thermal Resistance, 8L-SOIJ
JA
—
117
—
°C/W
Conditions
Temperature Ranges
Package Thermal Resistances
DS20001420F-page 4
Typical 4-layer board with
vias to ground plane
2002-2013 Microchip Technology Inc.
TC4421/TC4422
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
220
180
200
160
180
22,000 pF
140
22,000 pF
140
120
10,000 pF
100
80
4700 pF
60
120
100
80
10,000 pF
60
4700 pF
40
40
1000 pF
20
0
tFALL (nsec)
tRISE (nsec)
160
20
1000 pF
4
6
FIGURE 2-1:
Voltage.
8
14
10
12
VDD (V)
16
0
18
Rise Time vs. Supply
4
6
8
FIGURE 2-4:
Voltage.
10
12
VDD (V)
14
16
Fall Time vs. Supply
300
300
5V
5V
250
250
10V
150
15V
100
tFALL (nsec)
tRISE (nsec)
10V
200
200
150
15V
100
50
50
0
100
1000
FIGURE 2-2:
Load.
10,000
CLOAD (pF)
0
100
100,000
Rise Time vs. Capacitive
1000
FIGURE 2-5:
Load.
10,000
CLOAD (pF)
100,000
Fall Time vs. Capacitive
50
90
CLOAD = 1000 pF
CLOAD = 10,000 pF
VDD = 15V
80
45
70
Time (nsec)
Time (nsec)
18
60
tRISE
50
40
tD2
35
tD1
tFALL
40
30
30
-40
0
40
80
120
25
4
6
TA (°C)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
2002-2013 Microchip Technology Inc.
8
10
12
14
16
18
VDD (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay vs.
DS20001420F-page 5
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
220
180
VDD = 18V
200
160
140
140
120
63.2 kHz
1.125 MHz
100
80
ISUPPLY (mA)
ISUPPLY (mA)
160
632 kHz
60
40
0
100
1000
10,000
CLOAD (pF)
100,000
140
140
120
120
2 MHz
63.2 kHz
80
1.125 MHz
40
632 kHz
20
200 kHz
100
Frequency (kHz)
1000
22,000 pF
10,000 pF
47,000 pF
100
80
60
4700 pF
0.1 µF
40
20 kHz
20
470 pF
0
0
100
1000
10,000
CLOAD (pF)
10
100,000
FIGURE 2-8:
Supply Current vs.
Capacitive Load (VDD = 12V).
100
Frequency (kHz)
1000
FIGURE 2-11:
Supply Current vs.
Frequency (VDD = 12V).
100
120
VDD = 6V
200 kHz
VDD = 6V
47,000 pF
100
80
22,000 pF
60
50
63.2 kHz
40
2 MHz
ISUPPLY (mA)
70
80
10,000 pF
4700 pF
60
40
632 kHz
0.1 µF
20
20 kHz
10
0
100
470 pF
VDD = 12V
160
60
4700 pF
180
VDD = 12V
100
0.1 µF
60
FIGURE 2-10:
Supply Current vs.
Frequency (VDD = 18V).
ISUPPLY (mA)
ISUPPLY (mA)
80
0
10
180
ISUPPLY (mA)
100
20
FIGURE 2-7:
Supply Current vs.
Capacitive Load (VDD = 18V).
160
10,000 pF
120
40
20 kHz
200 kHz
20
30
22,000 pF
2 MHz
180
90
VDD = 18V 47,000 pF
20
470 pF
1000
10,000
CLOAD (pF)
100,000
FIGURE 2-9:
Supply Current vs.
Capacitive Load (VDD = 6V).
DS20001420F-page 6
0
10
100
Frequency (kHz)
1000
FIGURE 2-12:
Supply Current vs.
Frequency (VDD = 6V).
2002-2013 Microchip Technology Inc.
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
50
120
VDD = 10V
CLOAD = 10,000 pF
110
100
VDD = 18V
CLOAD = 10,000 pF
VIN = 5V
45
90
Time (nsec)
Time (nsec)
80
70
60
tD2
50
40
35
tD2
tD1
30
40
tD1
30
25
20
10
20
–60 –40 –20
0
1
2
3
4
5
6
7
8
Input Amplitude (V)
FIGURE 2-13:
Amplitude.
9
10
Propagation Delay vs. Input
0
FIGURE 2-16:
Temperature.
10-6
20 40
TA (°C)
60
80
100 120
Propagation Delay vs.
103
IQUIESCENT (µA)
A•sec
VDD = 18V
10-7
Input = 1
102
Input = 0
10-8
4
6
8
10
12
VDD (V)
14
16
18
-60 -40 -20
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
FIGURE 2-14:
Supply Voltage.
20
40
60
80 100 120
TJ (°C)
Crossover Energy vs.
FIGURE 2-17:
vs. Temperature.
6
6
5.5
5.5
5
Quiescent Supply Current
5
4.5
4.5
TJ = 150°C
4
RDS(ON) (Ω)
RDS(ON) (Ω)
0
3.5
3
2.5
2
1.5
1
1
0.5
0.5
4
6
8
TJ = 150°C
3
2.5
2
TJ = 25°C
1.5
4
3.5
10
12
VDD (V)
14
16
FIGURE 2-15:
High-State Output
Resistance vs. Supply Voltage.
2002-2013 Microchip Technology Inc.
18
TJ = 25°C
4
6
8
10
12
VDD (V)
14
16
18
FIGURE 2-18:
Low-State Output
Resistance vs. Supply Voltage.
DS20001420F-page 7
TC4421/TC4422
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
PDIP, SOIJ
Pin No.
6x5 DFN-S
Pin No.
TO-220
Symbol
1
1
—
VDD
3.1
Description
Supply input, 4.5V to 18V
2
2
1
INPUT
3
3
—
NC
Control input, TTL/CMOS compatible input
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT/OUTPUT
CMOS push-pull output
7
7
—
OUTPUT/OUTPUT
CMOS push-pull output
No connection
8
8
3
VDD
Supply input, 4.5V to 18V
—
9
—
EP
Exposed thermal pad
—
—
TAB
VDD
Thermal tab is at the VDD potential
Supply Input (VDD)
3.3
CMOS Push-Pull Output (OUTPUT,
OUTPUT)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.2
3.4
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
Ground (GND)
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
Exposed Thermal Pad (EP)
The exposed thermal pad of the 6x5 DFN-S package is
not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
DS20001420F-page 8
2002-2013 Microchip Technology Inc.
TC4421/TC4422
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
VDD = 18V
0V
4.7 µF
1
tD2
tF
+18V
tR
90%
90%
6
10%
0V
0.1 µF
2
tD1
Output
8
0.1 µF
Input
10%
10%
Inverting Driver
Output
TC4421
7
CL = 10,000 pF
+5V
90%
Input
4
5
10%
0V
+18V
Input: 100 kHz,
square wave,
tRISE = tFALL 10 nsec
tD1 90%
tR
Output
0V
90%
tD2
10%
tF
10%
Non-Inverting Driver
Note: Pinout shown is for the DFN-S, PDIP and SOIJ packages.
FIGURE 4-1:
TC4422
Switching Time Test Circuits.
2002-2013 Microchip Technology Inc.
DS20001420F-page 9
TC4421/TC4422
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
5-Lead TO-220
Example
OR
XXXXXXXXX
XXXXXXXXX
YYWWNNN
TC4421
3
CAT e^^
1318256
TC4421CAT
1318256
Example
8-Lead DFN-S (6x5x0.9 mm)
TC4421
EMF
1318
256
NNN
PIN 1
TC4421
3
EMF e^^
1318
256
OR
PIN 1
Example
8-Lead SOIJ (5.28 mm)
TC4421
ESM
1318256
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20001420F-page 10
TC4421
3
ESM e^^
1318256
OR
Example
TC4421
CPA256
OR
TC4421
e3 256
CPA^^
1318
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2002-2013 Microchip Technology Inc.
TC4421/TC4422
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