TC4426EMF713

TC4426/TC4427/TC4428 1.5A Dual High-Speed Power MOSFET Drivers Features: General Description: • High Peak Output Current: 1.5A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability: 1000 pF in 25 ns (typical) • Short Delay Times: 40 ns (typical) • Matched Rise and Fall Times • Low Supply Current: - With Logic ‘1’ Input – 4 mA - With Logic ‘0’ Input – 400 µA • Low Output Impedance: 7 • Latch-Up Protected: Withstands 0.5A Reverse Current • Input Withstands Negative Inputs Up to 5V • Electrostatic Discharge (ESD) Protected: 2.0 kV • Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN-S Packages The TC4426/TC4427/TC4428 are improved versions of the earlier TC426/TC427/TC428 family of MOSFET drivers. The TC4426/TC4427/TC4428 devices have matched rise and fall times when charging and discharging the gate of a MOSFET. Applications: These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2.0 kV. The TC4426/TC4427/TC4428 MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedances in both the On and Off states to ensure the MOSFET’s intended state is not affected, even by large transients. Other compatible drivers are the TC4426A/TC4427A/ TC4428A family of devices. The TC4426A/TC4427A/ TC4428A devices have matched leading and falling edge input-to-output delay times, in addition to the matched rise and fall times of the TC4426/TC4427/ TC4428 devices. • Switch Mode Power Supplies • Line Drivers • Pulse Transformer Drive Package Types 8-Pin MSOP/ PDIP/SOIC TC4426 TC4427 TC4428 NC IN A GND IN B 1 8 NC 2 TC4426 7 OUT A 3 TC4427 6 VDD 4 TC4428 5 OUT B NC OUT A VDD OUT B NC OUT A VDD OUT B 8-Pin DFN-S* TC4426 TC4427 TC4428 NC 1 IN A 2 GND 3 IN B 4 EP 9 8 NC NC NC 7 OUT A OUT A OUT A 6 5 VDD VDD VDD OUT B OUT B OUT B * Includes Exposed Thermal Pad (EP); see Table 3-1.  2006-2014 Microchip Technology Inc. DS20001422G-page 1 TC4426/TC4427/TC4428 Functional Block Diagram Inverting VDD 1.5 mA 300 mV Output Non-Inverting Input Effective Input C = 12 pF (Each Input) 4.7V TC4426/TC4427/TC4428 GND Note 1: TC4426 has two inverting drivers, while the TC4427 has two non-inverting drivers. The TC4428 has one inverting and one non-inverting driver. 2: Ground any unused driver input. DS20001422G-page 2  2006-2014 Microchip Technology Inc. TC4426/TC4427/TC4428 1.0 ELECTRICAL CHARACTERISTICS † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † Supply Voltage ................................................................+22V Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND – 5V) Package Power Dissipation (TA +70°C) DFN-S ..................................................................... Note 3 MSOP .....................................................................340 mW PDIP .......................................................................730 mW SOIC.......................................................................470 mW Storage Temperature Range .........................-65°C to +150°C Maximum Junction Temperature ................................. +150°C DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25ºC with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN -1.0 — +1.0 µA Conditions Input Note 2 0VVINVDD Output High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance RO — 7 10  IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 1.5 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — > 0.5 — A Duty cycle2%, t 300 µs VDD = 18V tR — 19 30 ns Figure 4-1 Fall Time tF — 19 30 ns Figure 4-1 Delay Time tD1 — 20 30 ns Figure 4-1 Delay Time tD2 — 40 50 ns Figure 4-1 IS — — — — 4.5 0.4 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Switching Time (Note 1) Rise Time Power Supply Power Supply Current Note 1: 2: 3: Switching times ensured by design. For V temperature range devices, the VIH (Min) limit is 2.0V. Package power dissipation is dependent on the copper pad area on the PCB.  2006-2014 Microchip Technology Inc. DS20001422G-page 3 TC4426/TC4427/TC4428 DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN -10 — +10 µA High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Note 2 0VVINVDD Output Output Resistance RO — 9 12  IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 1.5 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — >0.5 — A Duty cycle2%, t 300 µs VDD = 18V Rise Time tR — — 40 ns Figure 4-1 Fall Time tF — — 40 ns Figure 4-1 Delay Time tD1 — — 40 ns Figure 4-1 Delay Time tD2 — — 60 ns Figure 4-1 IS — — — — 8.0 0.6 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs) Switching Time (Note 1) Power Supply Power Supply Current Note 1: 2: Switching times ensured by design. For V temperature range devices, the VIH (Min) limit is 2.0V. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units Specified Temperature Range (C) TA 0 — +70 °C Specified Temperature Range (E) TA -40 — +85 °C Specified Temperature Range (V) TA -40 — +125 °C Conditions Temperature Ranges Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 8L-6x5 DFN-S JA — 33.2 — °C/W Thermal Resistance, 8L-MSOP JA — 206 — °C/W Thermal Resistance, 8L-PDIP JA — 125 — °C/W Thermal Resistance, 8L-SOIC JA — 155 — °C/W Package Thermal Resistances DS20001422G-page 4  2006-2014 Microchip Technology Inc. TC4426/TC4427/TC4428 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25ºC with 4.5V  VDD  18V. 100 100 2200 pF 2200 pF 80 1500 pF 1500 pF tFALL (nsec) tRISE (nsec) 80 60 1000 pF 40 60 1000 pF 40 470 pF 470 pF 20 20 100 pF 100 pF 0 0 4 6 FIGURE 2-1: Voltage. 8 10 14 12 VDD (V) 16 Rise Time vs. Supply 100 4 18 8 FIGURE 2-4: Voltage. tFALL (nsec) 10V 40 20 16 18 Fall Time vs. Supply 60 10V 15V 40 20 0 100 1000 0 100 10,000 1000 CLOAD (pF) CLOAD (pF) FIGURE 2-2: Load. Rise Time vs. Capacitive FIGURE 2-5: Load. 60 Propagation Delay (nsec) C LOAD = 1000 pF Time (nsec) 14 5V 15V VDD = 17.5V 40 30 tFALL 20 10 –55 –35 –15 FIGURE 2-3: Temperature. 12 VDD (V) 80 60 50 10 100 5V 80 tRISE (nsec) 6 tRISE 85 CLOAD = 1000 pF VIN = 5V tD2 tD1  2006-2014 Microchip Technology Inc. 6 105 125 Rise and Fall Times vs. Fall Time vs. Capacitive 80 75 70 65 60 55 50 45 40 35 30 25 20 4 5 25 45 65 Temperature (˚C) 10,000 8 10 12 14 16 18 VDD (V) FIGURE 2-6: Supply Voltage. Propagation Delay Time vs. DS20001422G-page 5 TC4426/TC4427/TC4428 Note: Unless otherwise indicated, TA = +25ºC with 4.5V  VDD  18V. 45 CLOAD = 1000 pF 55 VDD = 12V 50 45 tD2 40 35 30 tD1 25 CLOAD = 1000 pF VIN = 5V VDD = 18V tD2 40 Delay Time (nsec) Propagation Delay (nsec) 60 20 35 30 25 20 tD1 15 15 10 10 0 1 2 3 4 5 6 7 8 9 10 11 12 -55 -35 -15 Input Amplitude (V) FIGURE 2-7: Input Amplitude. 5 25 45 65 85 105 125 Temperature (ºC) Propagation Delay Time vs. FIGURE 2-10: Temperature. Propagation Delay Time vs. 4.0 3.5 Both Inputs = 1 IQUIESCENT (mA) IQUIESCENT (mA) V DD = 18V 1 3.0 Both Inputs = 1 2.5 Both Inputs = 0 0.1 4 6 8 FIGURE 2-8: Voltage. 10 12 VDD 14 16 2.0 –55 –35 –15 18 Supply Current vs. Supply FIGURE 2-11: Temperature. 5 65 85 105 125 Supply Current vs. 25 25 20 20 Worst Case @ TJ = +150˚C RDS(ON) (Ω) Worst Case @ TJ = +150˚C RDS(ON) (Ω) 25 45 TA (˚C) 15 Typical @ TA = +25˚C 10 15 Typical @ TA = +25˚C 10 5 5 4 6 8 10 12 14 16 18 4 6 VDD FIGURE 2-9: Supply Voltage. DS20001422G-page 6 Output Resistance (ROH) vs. 8 10 12 14 16 18 VDD FIGURE 2-12: Supply Voltage. Output Resistance (ROL) vs.  2006-2014 Microchip Technology Inc. TC4426/TC4427/TC4428 Note: Unless otherwise indicated, TA = +25ºC with 4.5V  VDD  18V. 60 60 VDD = 18V 2 MHz VDD = 18V 50 1000 pF 2200 pF 50 ISUPPLY (mA) ISUPPLY (mA) 900 kHz 40 600 kHz 30 20 200 kHz 10 40 100 pF 30 20 10 20 kHz 0 100 1000 CLOAD (pF) FIGURE 2-13: Capacitive Load. 0 10,000 Supply Current vs. 10 FIGURE 2-16: Frequency. 60 VDD = 12V 50 50 40 40 ISUPPLY (mA) ISUPPLY (mA) Supply Current vs. 60 2 MHz VDD = 12V 30 900 kHz 20 600 kHz 10 1000 CLOAD (pF) FIGURE 2-14: Capacitive Load. 2200 pF 1000 pF 30 20 100 pF 10 200 kHz 20 kHz 0 100 0 10 10,000 Supply Current vs. 100 1000 FREQUENCY (kHz) FIGURE 2-17: Frequency. 60 Supply Current vs. 60 VDD = 6V VDD = 6V 50 50 40 30 ISUPPLY (mA) ISUPPLY (mA) 100 1000 FREQUENCY (kHz) 2 MHz 20 900 kHz 600 kHz 200 kHz 20 kHz 10 0 100 FIGURE 2-15: Capacitive Load. 1000 CLOAD (pF) 2200 pF 30 1000 pF 20 10 10,000 Supply Current vs.  2006-2014 Microchip Technology Inc. 40 100 pF 0 10 FIGURE 2-18: Frequency. 100 1000 FREQUENCY (kHz) Supply Current vs. DS20001422G-page 7 TC4426/TC4427/TC4428 Note: Unless otherwise indicated, TA = +25ºC with 4.5V  VDD  18V. –8 10 9 8 7 6 A • sec 5 4 3 2 –9 10 Note: 4 6 8 10 12 VDD 14 16 18 The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. FIGURE 2-19: Supply Voltage. DS20001422G-page 8 Crossover Energy vs.  2006-2014 Microchip Technology Inc. TC4426/TC4427/TC4428 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE ( 1) 8-Pin PDIP/ MSOP/SOIC 8-Pin DFN-S 1 1 NC No connection 2 2 IN A Input A 3 3 GND Ground 4 4 IN B Input B 5 5 OUT B 6 6 VDD 7 7 OUT A 8 8 NC No connection PAD NC Exposed Metal Pad — Note 1: 3.1 Symbol Description Output B Supply input Output A Duplicate pins must be connected for proper operation. Inputs A and B MOSFET driver inputs A and B are high-impedance, TTL/CMOS compatible inputs. These inputs also have 300 mV of hysteresis between the high and low thresholds that prevents output glitching even when the rise and fall time of the input signal is very slow. 3.2 Supply Input (VDD) The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the Ground pin. The VDD input should be bypassed with local ceramic capacitors. The value of these capacitors should be chosen based on the capacitive load that is being driven. A value of 1.0 µF is suggested. Ground (GND) Ground is the device return pin. The Ground pin(s) should have a low-impedance connection to the bias supply source return. High peak current flows out the Ground pin(s) when the capacitive load is being discharged. 3.3 3.4 3.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN-S package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a Printed Circuit Board (PCB), to aid in heat removal from the package. Output A and B MOSFET driver outputs A and B are low-impedance, CMOS push-pull style outputs. The pull-down and pullup devices are of equal strength, making the rise and fall times equivalent.  2006-2014 Microchip Technology Inc. DS20001422G-page 9 TC4426/TC4427/TC4428 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 4.7 µF 0.1 µF Input tD1 7 VDD tR 90% 90% Output 5 10% 10% 0V Inverting Driver CL = 1000 pF 4 tD2 tF Output 6 2 10% +5V 90% Input 3 Input: 100 kHz, square wave, tRISE = tFALL  10 ns 0V VDD 10% tD1 90% tR Output 0V 10% 90% tD2 tF 10% Non-Inverting Driver FIGURE 4-1: DS20001422G-page 10 Switching Time Test Circuit.  2006-2014 Microchip Technology Inc. TC4426/TC4427/TC4428 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead DFN-S (6x5x0.9 mm) Example TC4426 EMF^^ 1315 256 NNN PIN 1 PIN 1 8-Lead MSOP (3x3 mm) Example 4426C 315256 Example 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN TC4427 CPA^^NNN YYWW 8-Lead SOIC (150 mil) 1315 Example TC4428C OA^^YYWW NNN Legend: XX...X Y YY WW NNN Note: * 256 Customer specific information* Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. Standard device marking consists of Microchip part number, year code, week code and traceability code.  2006-2014 Microchip Technology Inc. DS20001422G-page 11 TC4426/TC4427/TC4428       !"# $ 3& '!&" & + #*!(  ! ! &  + %&& #& && 244***' '4 +  e D L b N N K E2 E EXPOSED PAD NOTE 1 1 2 2 NOTE 1 1 D2 BOTTOM VIEW TOP VIEW A A3 A1 NOTE 2 5&! ' !6'&! 7"') %! 66-- 7 7 78 9 : & 8 ; &  : 01 :/  &#%%    / 1&&+ !! , -3 8 6 &  /01 8