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TC4427AEOA713

TC4427AEOA713

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    SOIC8_150MIL

  • 描述:

    1.5A双高速功率MOSFET驱动器

  • 数据手册
  • 价格&库存
TC4427AEOA713 数据手册
TC4426A/TC4427A/TC4428A 1.5A Dual High-Speed Power MOSFET Drivers Features: General Description: • High Peak Output Current: 1.5A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability: 1000 pF in 25 ns (typical) • Short Delay Times: 30 ns (typical) • Matched Rise, Fall and Delay Times • Low Supply Current: - With Logic ‘1’ Input – 1 mA (typical) - With Logic ‘0’ Input – 100 µA (typical) • Low Output Impedance: 7(typical) • Latch-Up Protected: Will Withstand 0.5A Reverse Current • Input Withstands Negative Inputs Up to 5V • Electrostatic Discharge (ESD) Protected: 2 kV • Pin-compatible with TC426/TC427/TC428 and TC4426/TC4427/TC4428 • Space-saving 8-Pin MSOP and 8-Pin 6x5 DFN-S Packages The TC4426A/TC4427A/TC4428A are improved versions of the earlier TC4426/TC4427/TC4428 family of MOSFET drivers. In addition to matched rise and fall times, the TC4426A/TC4427A/TC4428A devices have matched leading and falling edge propagation delay times. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the Ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against Electrostatic Discharge (ESD) up to 2 kV. The TC4426A/TC4427A/TC4428A MOSFET drivers can easily charge/discharge 1000 pF gate capacitances in under 30 ns. These devices provide low enough impedances in both the On and Off states to ensure the MOSFET’s intended state will not be affected, even by large transients. Applications: • Switch Mode Power Supplies • Line Drivers • Pulse Transformer Drive Package Types 8-Pin MSOP/ PDIP/SOIC TC4426A NC IN A GND IN B 1 2 3 4 8 7 6 5 NC OUT A VDD OUT B TC4427A NC OUT A VDD OUT B TC4428A NC OUT A VDD OUT B 8-Pin 6x5 DFN-S* NC 1 IN A 2 GND 3 IN B 4 EP 9 TC4426A TC4427A TC4428A 8 NC NC NC 7 OUT A OUT A OUT A 6 5 VDD VDD VDD OUT B OUT B OUT B * Includes Exposed Thermal Pad (EP); see Table 3-1.  2002-2014 Microchip Technology Inc. DS20001423J-page 1 TC4426A/TC4427A/TC4428A Functional Block Diagram VDD Inverting 500 A 300 mV Output Non-Inverting Input Effective Input C = 12 pF (Each Input) GND 4.7V TC4426A/TC4427A/TC4428A Note 1: TC4426A has two inverting drivers, while the TC4427A has two non-inverting drivers. The TC4428A has one inverting and one non-inverting driver. 2: Ground any unused driver input. DS20001423J-page 2  2002-2014 Microchip Technology Inc. TC4426A/TC4427A/TC4428A 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ................................................................+22V Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND – 5V) Package Power Dissipation (TA +70°C) DFN-S ..................................................................... Note 2 MSOP .....................................................................340 mW PDIP .......................................................................730 mW SOIC.......................................................................470 mW DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current IIN –1.0 — +1.0 µA –10 — +10 Conditions Input 0V  VIN  VDD Output High Output Voltage VOH VDD – 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance RO  — 7 9 — 7 10 IOUT = 10 mA, VDD = 18V, TA = +25°C 0°C  TA  +70°C — 8 11 -40°C  TA  +85°C — 8 12 -40°C  TA  +125°C Peak Output Current IPK — 1.5 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — > 0.5 — A Duty cycle  2%, t  300 µs VDD = 18V tR — 25 35 ns TA = +25°C — 27 40 0°C  TA  +70°C — 29 40 -40°C  TA  +85°C — 30 40 — 25 35 — 27 40 0°C  TA  +70°C — 29 40 -40°C  TA  +85°C — 30 40 — 30 35 — 33 40 0°C  TA  +70°C — 35 45 -40°C  TA  +85°C — 38 50 -40°C  TA  +125°C, Figure 4-1 Switching Time (Note 1) Rise Time Fall Time tF Delay Time Note 1: 2: tD1 -40°C  TA  +125°C, Figure 4-1 ns TA = +25°C -40°C  TA  +125°C, Figure 4-1 ns TA = +25°C Switching times ensured by design. Package power dissipation is dependent on the copper pad area on the PCB.  2002-2014 Microchip Technology Inc. DS20001423J-page 3 TC4426A/TC4427A/TC4428A DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units tD2 — 30 35 ns — 33 40 0°C  TA  +70°C — 35 45 -40°C  TA  +85°C — 38 50 -40°C  TA  +125°C, Figure 4-1 Delay Time Conditions TA = +25°C Power Supply Power Supply Current Note 1: 2: IS — 1.0 2.0 — 0.1 0.2 mA VIN = 3V (Both inputs) VIN = 0V (Both inputs), VDD = 18V Switching times ensured by design. Package power dissipation is dependent on the copper pad area on the PCB. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V. Parameters Sym. Min. Typ. Max. Units TA 0 — +70 °C Specified Temperature Range (E) TA -40 — +85 °C Specified Temperature Range (V) TA -40 — +125 °C Conditions Temperature Ranges Specified Temperature Range (C) Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA -65 — +150 °C Thermal Resistance, 8L-6x5 DFN-S JA — 35.7 — °C/W Thermal Resistance, 8L-MSOP JA — 211 — °C/W Thermal Resistance, 8L-PDIP JA — 89.3 — °C/W Thermal Resistance, 8L-SOIC JA — 149.5 — °C/W Package Thermal Resistances DS20001423J-page 4  2002-2014 Microchip Technology Inc. TC4426A/TC4427A/TC4428A 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, over operating temperature range with 4.5V  VDD  18V. 100 CL = 1500 pF CL = 1000 pF CL = 470 pF 60 40 20 0 5.0 7.5 10.0 FIGURE 2-1: Voltage. 40 CL= 100pF CL = 100 pF 0 5.0 7.5 12.5 VDD (V) 60 50 40 30 20 17.5 10.0 FIGURE 2-4: Voltage. Rise Time vs. Supply 12.5 VDD (V) 15.0 17.5 Fall Time vs. Supply 60 tD1 100 90 80 70 15.0 CL = 1000 pF VDD = 10V 55 Delay Time (nsec) Delay Time (nsec) 110 tD2 CL = 1000 pF tD1 50 45 tD2 40 35 30 25 20 1 2 3 FIGURE 2-2: Amplitude. 4 5 6 7 Input Amplitude (V) 8 0 9 5 FIGURE 2-5: Supply Voltage. Delay Time vs. Input 10 VDD (V) 15 20 Propagation Delay Time vs. 40 28 CL = 1000 pF VDD = 18V Delay Time (nsec) Time (nsec) CL = 1500 pF CL = 1000 pF CL = 470 pF 60 20 CL = 100 pF 26 TA = +25°C CL == 2200 2200pF C pF L 80 tFALL (nsec) tRISE (nsec) 80 100 TA = +25°C CL = 2200 pF 24 22 20 18 16 14 -100 tRISE tFALL -50 0 50 100 150 35 CL = 1000 pF VDD = 18V 30 25 tD2 20 tD1 15 -100 TEMPERATURE (°C) FIGURE 2-3: Temperature. Rise and Fall Times vs.  2002-2014 Microchip Technology Inc. -50 0 50 100 150 TEMPERATURE (°C) FIGURE 2-6: Temperature. Propagation Delay Time vs. DS20001423J-page 5 TC4426A/TC4427A/TC4428A Note: Unless otherwise indicated, over operating temperature range with 4.5V  VDD  18V. 30 30 TA = +125°C 20 25 RDS(ON) (Ω) RDS(ON) (Ω) 25 TA = +25°C 15 10 15 TA = +25°C 10 5 5 0 0 5 FIGURE 2-7: Resistance. 60 10 VDD (V) 15 20 FIGURE 2-10: Resistance. High-State Output CL = 2200 pF 50 40 CL = 1500 pF CL = 1000 pF 15 2 MHz VDD = 18V 900 kHz 50 CL = 100 pF 30 20 10 20 Low-State Output 60 VDD = 18V 10 VDD (V) 5 0 ISUPPLY (mA) 0 ISUPPLY (mA) TA = +125°C 20 40 600 kHz 30 20 200 kHz 10 20 kHz 0 0 0 500 1000 1500 2000 0 2500 500 1000 1500 CLOAD (pF) FREQUENCY (kHz) 80 ISUPPLY (mA) CL = 1500 pF 50 CL = 1000 pF 40 30 CL = 100 pF 20 50 40 0 1500 2000 2500 600 kHz 20 10 1000 900 kHz 30 0 500 2 MHz 60 10 0 200 kHz 20 kHz 0 1000 500 FREQUENCY (kHz) FIGURE 2-9: Frequency. DS20001423J-page 6 Supply Current vs. Supply Current vs. VDD = 12V 70 60 2500 80 CL = 2200 pF VDD = 12V 70 FIGURE 2-11: Capacitive Load. Supply Current vs. ISUPPLY (mA) FIGURE 2-8: Frequency. 2000 FIGURE 2-12: Capacitive Load. 1500 CLOAD (pF) 2000 2500 Supply Current vs.  2002-2014 Microchip Technology Inc. TC4426A/TC4427A/TC4428A Note: Unless otherwise indicated, over operating temperature range with 4.5V  VDD  18V. 40 40 VDD = 6V CL = 2200 pF 30 CL = 1500 pF 25 CL = 1000 pF 20 15 CL = 100 pF 10 VDD = 6V 35 ISUPPLY (mA) ISUPPLY (mA) 35 5 0 2 MHz 30 25 20 900 kHz 15 600 kHz 10 200 kHz 20 kHz 5 0 0 500 1000 1500 2000 0 2500 500 FREQUENCY (kHz) FIGURE 2-15: Capacitive Load. Supply Current vs. 900 800 BOTH INPUTS = 1 700 IQUIESCENT (µA) IQUIESCENT (µA) FIGURE 2-13: Frequency. TA = 25°C 600 500 400 300 200 BOTH INPUTS = 0 100 0 0 5 10 15 20 Quiescent Supply Current  2002-2014 Microchip Technology Inc. 1500 CLOAD (pF) 2000 2500 Supply Current vs. 1100 1000 900 BOTH INPUTS = 1 800 700 600 500 400 300 200 BOTH INPUTS = 0 100 0 -100 -50 0 VDD = 18V 50 100 150 TEMPERATURE (°C) VDD (V) FIGURE 2-14: vs. Voltage. 1000 FIGURE 2-16: vs. Temperature. Quiescent Supply Current DS20001423J-page 7 TC4426A/TC4427A/TC4428A 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE (Note 1) PDIP, MSOP, SOIC 6x5 DFN-S Symbol 1 1 NC Note 1: 3.1 2 IN A Input A 3 3 GND Ground 4 4 IN B 5 5 OUT B 6 6 VDD 7 7 OUT A 8 8 NC No connection — 9 EP Exposed Metal Pad Input B Output B Supply input Output A Duplicate pins must be connected for proper operation. Inputs A and B (IN A, IN B) 3.4 Supply Input (VDD) The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V, with respect to the ground pin. The VDD input should be bypassed with local ceramic capacitors. The value of these capacitors should be chosen based on the capacitive load that is being driven. Ground (GND) The Ground pin is the return path for both the bias current and the high-peak current that discharges the external load capacitance. The Ground pin should be tied into a ground plane or have a very short trace to the bias supply source return. 3.3 No connection 2 MOSFET driver inputs A and B are high-impedance, TTL/CMOS compatible inputs. These inputs also have 300 mV of hysteresis between the high and low thresholds that prevents output glitching, even when the rise and fall time of the input signal is very slow. 3.2 Description 3.5 Exposed Metal Pad (EP) The exposed metal pad of the 6x5 DFN-S package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board, to aid in heat removal from the package. Output A and B (OUT A, OUT B) MOSFET driver outputs A and B are low-impedance, CMOS push-pull style outputs. The pull-down and pull-up devices are of equal strength, making the rise and fall times equivalent. DS20001423J-page 8  2002-2014 Microchip Technology Inc. TC4426A/TC4427A/TC4428A 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 4.7 µF 0.1 µF Input tD1 7 VDD tR 90% 90% Output 5 10% 10% 0V Inverting Driver (TC4426A, ½ TC4428A) CL = 1000 pF 4 tD2 tF Output 6 2 10% +5V 90% Input 3 Input: 100 kHz, square wave, tRISE = tFALL  10 ns 0V VDD 10% tD190% tR Output 0V tD2 10% 90% tF 10% Non-Inverting Driver (TC4427A, ½ TC4428A) FIGURE 4-1: Switching Time Test Circuit.  2002-2014 Microchip Technology Inc. DS20001423J-page 9 TC4426A/TC4427A/TC4428A 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead DFN-S (6x5x0.9 mm) NNN PIN 1 Example TC4426A EMF e ^^3 1330 256 PIN 1 8-Lead MSOP (3x3 mm) Example 4426AE 330256 8-Lead PDIP (300 mil) XXXXXXXX XXXXXNNN YYWW 8-Lead SOIC (3.90 mm) NNN Legend: XX...X Y YY WW NNN e3 * Note: DS20001423J-page 10 Example TC4427A EPA e^^3 256 1330 Example TC2248AC OA e^^3 330 256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2002-2014 Microchip Technology Inc. TC4426A/TC4427A/TC4428A        !"#  $ 3& '!&" & + # * !(  ! ! &   +   % & & # & && 244***' '4 +   e D L b N N K E2 E EXPOSED PAD NOTE 1 1 2 2 NOTE 1 1 D2 BOTTOM VIEW TOP VIEW A A3 A1 NOTE 2 5&! ' !6'&! 7"') %! 66-- 7 7 78 9 : & 8  ;  &  : 01 :/  & #%%    / 1& &+ !! , -3 8  6  &  /01 8  
TC4427AEOA713 价格&库存

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TC4427AEOA713
    •  国内价格
    • 45+3.23052

    库存:0

    TC4427AEOA713
    •  国内价格
    • 1+3.36720
    • 10+3.09120
    • 30+3.03600
    • 100+2.87040

    库存:200