TC4451/TC4452
12A High-Speed MOSFET Drivers
Features:
General Description:
• High Peak Output Current: 13A (typical)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2.6A
(maximum)
• Matched Fast Rise and Fall Times:
- 21 ns with 10,000 pF Load
- 42 ns with 22,000 pF Load
• Matched Short Propagation Delays: 44 ns
(typical)
• Low Supply Current:
- With Logic ‘1’ Input – 140 µA (typical)
- With Logic ‘0’ Input – 40 µA (typical)
• Low Output Impedance: 0.9 (typical)
• Latch-Up Protected: Withstands 1.5A Output
Reverse Current
• Input Withstands Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429,
TC4421/TC4422 and TC4421A/TC4422A
MOSFET Drivers
• Space-Saving, Thermally-Enhanced, 8-Pin DFNS Package
The TC4451/TC4452 are single-output MOSFET
drivers. These devices are high-current buffers/drivers
capable of driving large MOSFETs and insulated gate
bipolar transistors (IGBTs). The TC4451/TC4452 have
matched output rise and fall times, as well as matched
leading and falling-edge propagation delay times. The
TC4451/TC4452 devices also have very low crossconduction current, reducing the overall power
dissipation of the device.
Applications:
•
•
•
•
•
•
Line Drivers for Extra Heavily-Loaded Lines
Pulse Generators
Driving the Largest MOSFETs and IGBTs
Local Power On/Off Switch
Motor and Solenoid Driver
LF Initiator
2006-2014 Microchip Technology Inc.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground
terminals. They can accept, without damage or logic
upset, more than 1.5A inductive current of either
polarity being forced back into their outputs. In addition,
all terminals are fully protected against electrostatic
discharge (ESD) up to 4.0 kV (HBM) and 400V (MM).
The TC4451/TC4452 inputs may be driven directly
from either TTL or CMOS (3V to 18V). Moreover,
300 mV of hysteresis is built into the input, providing
noise immunity and enabling the device to be driven
from slowly rising or falling waveforms.
With a wide operating temperature range and having
both surface-mount and pin-through-hole packages,
the TC4451/TC4452 family of 12A MOSFET drivers fits
into any application where high gate/line capacitance
drive is required.
DS20001987C-page 1
TC4451/TC4452
Package Types
8-Pin PDIP/SOIC(1, 2)
TC4451
VDD
INPUT
NC
GND
1
2
3
4
TC4452
8
7
6
5
VDD
OUTPUT
OUTPUT
GND
VDD
INPUT
NC
GND
1
2
3
4
8
7
6
5
VDD
OUTPUT
OUTPUT
GND
8-Pin DFN-S(1, 2)
TC4451
VDD 1
INPUT 2
NC 3
TC4452
8 VDD
EP
9
GND 4
7 OUTPUT
6 OUTPUT
5 GND
8 VDD
VDD 1
INPUT 2
NC 3
GND 4
EP
9
7 OUTPUT
6 OUTPUT
5 GND
(1, 2)
5-Pin TO-220
TC4451
TC4452
INPUT
GND
VDD
GND
OUTPUT
Tab is Common to VDD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed thermal pad (EP) of the DFN-S package is electrically isolated; see Table 3-1.
DS20001987C-page 2
2006-2014 Microchip Technology Inc.
TC4451/TC4452
Functional Block Diagram
VDD
TC4451
Inverting
140 µA
300 mV
Cross-Conduction
Reduction and Pre-Drive
Circuitry
Output
Output
TC4452
Non-Inverting
Input
4.7V
GND
Effective
Input
C = 25 pF
2006-2014 Microchip Technology Inc.
DS20001987C-page 3
TC4451/TC4452
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings †
Supply Voltage .....................................................+20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD) ...................................50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Logic ‘1’, High Input Voltage
VIH
2.4
1.5
—
V
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
-10
—
+10
µA
Input Voltage
VIN
-5
—
VDD + 0.3
V
Conditions
Input
0V VIN VDD
Output
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
1.0
1.5
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
0.9
1.5
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
13
—
A
VDD = 18V
Continuous Output Current
IDC
2.6
—
—
A
10V VDD 18V (Note 2,
Note 3)
Latch-Up Protection
Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle 2%, t 300 µs
tR
—
30
40
ns
Figure 4-1, CL = 15,000 pF
Fall Time
tF
—
32
40
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD1
—
44
52
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD2
—
44
52
ns
Figure 4-1, CL = 15,000 pF
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Operating Input Voltage
VDD Ramp Rate
Note 1:
2:
3:
—
140
200
µA
VIN = 3V
—
40
100
µA
VIN = 0V
VDD
4.5
—
18.0
V
SVDD
0.2
—
—
V/ms
IS
Switching times ensured by design.
Tested during characterization, not production tested.
Valid for AT and MF packages only. TA = +25°C.
DS20001987C-page 4
2006-2014 Microchip Technology Inc.
TC4451/TC4452
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over the operating temperature range with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
-10
—
+10
µA
0V VIN VDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
—
2.2
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
—
2.0
IOUT = 10 mA, VDD = 18V
tR
—
35
60
ns
Figure 4-1, CL = 15,000 pF
Fall Time
tF
—
38
60
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD1
—
55
65
ns
Figure 4-1, CL = 15,000 pF
Propagation Delay Time
tD2
—
55
65
ns
Figure 4-1, CL = 15,000 pF
IS
—
200
400
µA
VIN = 3V
—
50
150
µA
VIN = 0V
VDD
4.5
—
18.0
V
SVDD
0.2
—
—
V/ms
Output
Switching Time (Note 1)
Rise Time
Power Supply
Power Supply Current
Operating Input Voltage
VDD Ramp Rate
Note 1:
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Specified Temperature Range (V)
TA
-40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Conditions
Temperature Ranges
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
JA
—
39.5
—
°C/W
Without heat sink
Thermal Resistance, 8L-6x5 DFN-S
JA
—
35.7
—
°C/W
Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
JA
—
89.3
—
°C/W
Thermal Resistance, 8L-SOIC
JA
—
149.5
—
°C/W
2006-2014 Microchip Technology Inc.
DS20001987C-page 5
TC4451/TC4452
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
300
220
200
180
160
140
120
100
80
60
40
20
0
47,000 pF
250
Fall Time (ns)
Rise Time (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
22,000 pF
5V
200
10V
150
100
18V
50
10,000 pF
0
4
6
8
10
12
14
16
100
18
1000
Supply Voltage (V)
FIGURE 2-1:
Voltage.
Rise Time vs. Supply
FIGURE 2-4:
Load.
Rise and Fall Times (ns)
250
Rise Time (ns)
100000
Fall Time vs. Capacitive
40
300
5V
200
10V
150
100
18V
50
0
VDD = 18V
tRISE
30
tFALL
20
10
0
100
1000
10000
100000
-40 -25 -10
5
20 35 50 65 80 95 110 125
Capacitive Load (pF)
FIGURE 2-2:
Load.
Temperature (°C)
Rise Time vs. Capacitive
FIGURE 2-5:
Temperature.
Rise and Fall Times vs.
-7
1E-07
10
220
200
180
160
140
120
100
80
60
40
20
0
Crossover Energy (A·sec)
Fall Time (ns)
10000
Capacitive Load (pF)
47,000 pF
22,000 pF
10,000 pF
4
6
FIGURE 2-3:
Voltage.
DS20001987C-page 6
-8
1E-08
10
-9
1E-09
10
8
10
12
14
Supply Voltage (V)
16
Fall Time vs. Supply
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-6:
Supply Voltage.
Crossover Energy vs.
2006-2014 Microchip Technology Inc.
TC4451/TC4452
95
90
85
80
75
70
65
60
55
50
45
40
140
CLOAD = 15,000 pF
VIN = 5V
120
IQUIESCENT (µA)
Propagation Delay (ns)
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
tD2
INPUT = High
100
80
60
INPUT = Low
40
tD1
20
4
6
8
10
12
14
16
18
4
6
8
Supply Voltage (V)
CLOAD = 15,000 pF
VDD = 10V
tD2
tD1
220
200
180
160
140
120
100
80
60
40
20
3
4
5
6
7
8
9
INPUT = Low
Propagation Delay vs. Input
Temperature (oC)
FIGURE 2-11:
vs. Temperature.
Input Threshold (V)
Propagation Delay (ns)
VDD = 10V
VIN = 5V
CLOAD = 15,000 pF
50
45
tD2
40
35
tD1
30
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature
FIGURE 2-9:
Temperature.
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
2006-2014 Microchip Technology Inc.
Quiescent Supply Current
VDD = 12 V
VIH
VIL
-40 -25 -10
(oC)
Propagation Delay vs.
20 35 50 65 80 95 110 125
10
60
55
18
INPUT = High
Input Amplitude (V)
FIGURE 2-8:
Amplitude.
16
VDD = 18 V
-40 -25 -10 5
2
14
FIGURE 2-10:
Quiescent Supply Current
vs. Supply Voltage.
Propagation Delay vs.
100
95
90
85
80
75
70
65
60
55
50
45
40
12
Supply Voltage (V)
IQUIESCENT (µA)
Propagation Delay (ns)
FIGURE 2-7:
Supply Voltage.
10
5
20 35 50 65 80 95 110 125
Temperature (oC)
FIGURE 2-12:
Temperature.
Input Threshold vs.
DS20001987C-page 7
TC4451/TC4452
Supply Current (mA)
300
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
VIH
VIL
4
6
8
FIGURE 2-13:
Voltage.
10
12
14
Supply Voltage (V)
16
18
200
150
100 kHz
2 MHz
50 kHz
100
1 MHz
10 kHz
50
1,000
100,000
10,000
FIGURE 2-16:
Supply Current vs.
Capacitive Load (VDD = 18V).
300
VIN = 5V (TC4452)
VIN = 0V (TC4451)
3.5
3.0
2.5
2.0
TJ = +125oC
1.5
1.0
o
TJ = +25 C
0.5
VDD = 12 V
1 MHz
250
200 kHz
200
150
100
100 kHz
2 MHz
50 kHz
50
10 kHz
0
0.0
4
6
8
10
12
14
16
100
18
FIGURE 2-14:
High State Output
Resistance vs. Supply Voltage.
VIN = 0V (TC4452)
VIN = 5V (TC4451)
2.5
2.0
o
1.5
TJ = +125 C
1.0
0.5
100,000
10,000
FIGURE 2-17:
Supply Current vs.
Capacitive Load (VDD = 12V).
TJ = +25oC
175
155
Supply Current (mA)
3.0
1,000
Capacitive Load (pF)
Supply Voltage (V)
ROUT-LO (:)
200 kHz
Capacitive Load (pF)
Input Threshold vs. Supply
4.0
ROUT-HI (:)
VDD = 18 V
250
0
100
Supply Current (mA)
Input Threshold (V)
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
VDD = 6 V
2 MHz
1 MHz
135
115
200 kHz
95
100 kHz
75
55
50 kHz
35
10 kHz
15
-5
0.0
4
6
8
10
12
14
Supply Voltage (V)
FIGURE 2-15:
Low State Output
Resistance vs. Supply Voltage.
DS20001987C-page 8
16
18
100
1,000
10,000
100,000
Capacitive Load (pF)
FIGURE 2-18:
Supply Current vs.
Capacitive Load (VDD = 6V).
2006-2014 Microchip Technology Inc.
TC4451/TC4452
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
Supply Current (mA)
250
VDD = 18 V
15,000 pF
200
10,000 pF
22,000 pF
150
1,000 pF
47,000 pF
100
0.1 µF
470 pF
50
0
10
100
1000
10000
Frequency (kHz)
FIGURE 2-19:
Supply Current vs.
Frequency (VDD = 18V).
Supply Current (mA)
250
VDD = 12 V
15,000 pF
200
150
22,000 pF
100
10,000 pF
47,000 pF
1,000 pF
0.1 µF
50
470 pF
0
10
100
1000
10000
Frequency (kHz)
FIGURE 2-20:
Supply Current vs.
Frequency (VDD = 12V).
Supply Current (mA)
250
VDD = 6 V
200
15,000 pF
150
22,000 pF
100
10,000 pF
47,000 pF
50
1,000 pF
0.1 µF
470 pF
0
10
100
1000
10000
Frequency (kHz)
FIGURE 2-21:
Supply Current vs.
Frequency (VDD = 6V).
2006-2014 Microchip Technology Inc.
DS20001987C-page 9
TC4451/TC4452
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin PDIP,
SOIC
8-Pin DFN-S
5-Pin TO-220
Symbol
1
1
—
VDD
2
2
1
INPUT
3
3
—
NC
4
4
2
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT/OUTPUT
CMOS push-pull output
7
7
—
OUTPUT/OUTPUT
CMOS push-pull output
3.1
Description
Supply input, 4.5V to 18V
Control input, TTL/CMOS-compatible input
No connection
8
8
3
VDD
Supply input, 4.5V to 18V
—
9
—
EP
Exposed thermal pad
—
—
TAB
VDD
Thermal tab is at the VDD potential
Supply Input (VDD)
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
3.4
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
3.5
3.2
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
CMOS Push-Pull Output (OUTPUT,
OUTPUT)
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 12A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
DS20001987C-page 10
Exposed Thermal Pad (EP)
The exposed thermal pad of the 6x5 DFN-S package is
not internally connected to any potential. Therefore,
this pad can be connected to a ground plane or other
copper plane on a printed circuit board (PCB) to help
remove heat from the package.
3.6
3.3
Ground (GND)
Thermal Tab
The thermal tab of the TO-220 package is connected to
the VDD potential of the device and this connection is
used as a current-carrying path.
2006-2014 Microchip Technology Inc.
TC4451/TC4452
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
0V
10%
tD1
tD2
tF
+18V
tR
90%
90%
Output
Inverting Driver
TC4451
VDD = 18V
0.1 µF
10%
10%
0V
0.1 µF
4.7 µF
1
8
VDD VDD
2 Input
Input
Output 6
Output 7
GND
4
Output
CL = 15,000 pF
GND
5
+5V
Input: 100 kHz, square wave
tRISE = tFALL 10 ns
90%
Input
0V
+18V
10%
tD1 90%
tR
Output
0V
10%
tD2
90%
tF
10%
Non-Inverting Driver
TC4452
Note: Pinout shown is for the DFN-S, PDIP and SOIC packages.
FIGURE 4-1:
Switching Time Test Circuits.
2006-2014 Microchip Technology Inc.
DS20001987C-page 11
TC4451/TC4452
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
5-Lead TO-220
TC4451
e3
VAT^^
1319256
XXXXXXXXX
XXXXXXXXX
YYWWNNN
8-Lead DFN-S (6x5x0.9 mm)
NNN
PIN 1
XXXXXXXX
XXXXXNNN
YYWW
8-Lead SOIC (3.90 mm)
NNN
Note:
DS20001987C-page 12
Example
TC4451
3
VMF e^^
1319
256
PIN 1
8-Lead PDIP (300 mil)
Legend: XX...X
Y
YY
WW
NNN
e3
*
Example
Example
TC4451V
e3 256
PA^^
1319
Example
TC4451V
e3 1319
OA^^
256
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2006-2014 Microchip Technology Inc.
TC4451/TC4452
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2006-2014 Microchip Technology Inc.
DS20001987C-page 13
TC4451/TC4452
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7
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DS20001987C-page 14
2006-2014 Microchip Technology Inc.
TC4451/TC4452
/#
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2006-2014 Microchip Technology Inc.
DS20001987C-page 15
TC4451/TC4452
/HDG3ODVWLF'XDO,Q/LQH 3$ PLO%RG\>3',3@
1RWH
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
N
B
E1
NOTE 1
1
2
TOP VIEW
E
C
A2
A
3/$1(
L
c
A1
e
eB
8X b1
8X b
.010
C
SIDE VIEW
END VIEW
Microchip Technology Drawing No. C04-018D Sheet 1 of 2
DS20001987C-page 16
2006-2014 Microchip Technology Inc.
TC4451/TC4452
/HDG3ODVWLF'XDO,Q/LQH 3$ PLO%RG\>3',3@
1RWH
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
ALTERNATE LEAD DESIGN
(VENDOR DEPENDENT)
DATUM A
DATUM A
b
b
e
2
e
2
e
Units
Dimension Limits
Number of Pins
N
e
Pitch
Top to Seating Plane
A
Molded Package Thickness
A2
Base to Seating Plane
A1
Shoulder to Shoulder Width
E
Molded Package Width
E1
Overall Length
D
Tip to Seating Plane
L
c
Lead Thickness
Upper Lead Width
b1
b
Lower Lead Width
Overall Row Spacing
eB
§
e
MIN
.115
.015
.290
.240
.348
.115
.008
.040
.014
-
INCHES
NOM
8
.100 BSC
.130
.310
.250
.365
.130
.010
.060
.018
-
MAX
.210
.195
.325
.280
.400
.150
.015
.070
.022
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-018D Sheet 2 of 2
2006-2014 Microchip Technology Inc.
DS20001987C-page 17
TC4451/TC4452
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20001987C-page 18
2006-2014 Microchip Technology Inc.
TC4451/TC4452
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
2006-2014 Microchip Technology Inc.
DS20001987C-page 19
TC4451/TC4452
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DS20001987C-page 20
2006-2014 Microchip Technology Inc.
TC4451/TC4452
APPENDIX A:
REVISION HISTORY
Revision C (July 2014)
The following is the list of modifications:
1.
2.
3.
Added value for Electrostatic Discharge (ESD)
protection – Machine Model (MM) in General
Description: column.
Updated package marking information and
drawings in Section 5.0, Packaging Information.
Minor grammatical and spelling corrections.
Revision B (March 2012)
The following is the list of modifications:
1.
2.
3.
Added VDD Ramp Rate value in both DC
Characteristics and DC Characteristics (Over
Operating Temperature Range) tables.
Updated package thermal resistances values in
Temperature Characteristics table.
Updated package specification drawings in
Section 5.0, Packaging Information to show
all available drawings.
Revision A (February 2006)
• Original release of this document.
2006-2014 Microchip Technology Inc.
DS20001987C-page 21
TC4451/TC4452
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
XX
XXX
Package
Tape & Reel
Device:
TC4451:
TC4452:
12A High-Speed MOSFET Driver, Inverting
12A High-Speed MOSFET Driver, Non-Inverting
Temperature Range:
V
Package: *
AT
= TO-220, 5-lead
MF
= Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA
= Plastic DIP (300 mil Body), 8-lead
OA
= Plastic SOIC (150 mil Body), 8-lead
OA713 = Plastic SOIC (150 mil Body), 8-lead
(Tape and Reel)
= -40°C to +125°C
*All package offerings are Pb Free (Lead Free).
DS20001987C-page 22
Examples:
a)
TC4451VAT:
12A High-Speed
Inverting
MOSFET Driver,
TO-220 package
b)
TC4451VOA:
12A High-Speed
Inverting
MOSFET Driver,
SOIC package
c)
TC4451VMF:
12A High-Speed
Inverting
MOSFET Driver,
DFN-S package
a)
TC4452VPA:
12A High-Speed
Non-Inverting
MOSFET Driver,
PDIP package
b)
TC4452VOA:
12A High-Speed
Non-Inverting
MOSFET Driver,
SOIC package
c)
TC4452VMF:
12A High-Speed
Non-Inverting
MOSFET Driver,
DFN-S package
2006-2014 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2006-2014, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-63276-429-4
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
2006-2014 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20001987C-page 23
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
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Tel: 949-462-9523
Fax: 949-462-9608
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
DS20001987C-page 24
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Germany - Dusseldorf
Tel: 49-2129-3766400
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Germany - Pforzheim
Tel: 49-7231-424750
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Italy - Venice
Tel: 39-049-7625286
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Poland - Warsaw
Tel: 48-22-3325737
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
03/25/14
2006-2014 Microchip Technology Inc.
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