TC4467/TC4468/TC4469
Logic-Input CMOS Quad Drivers
Features
General Description
• High Peak Output Current: 1.2 A
• Wide Operating Range:
- 4.5 V to 18 V
• Symmetrical Rise/Fall Times: 25 nsec
• Short, Equal Delay Times: 75 nsec
• Latch-proof. Will Withstand 500 mA Inductive
Kickback
• 3 Input Logic Choices:
- AND / NAND / AND + Inv
• ESD Protection on All Pins: 2 kV
The TC4467/TC4468/TC4469 devices are a family of
four-output CMOS buffers/MOSFET drivers with 1.2 A
peak drive capability. Unlike other MOSFET drivers,
these devices have two inputs for each output. The
inputs are configured as logic gates: NAND (TC4467),
AND (TC4468) and AND/INV (TC4469).
Applications
•
•
•
•
•
•
General Purpose CMOS Logic Buffer
Driving All Four MOSFETs in an H-Bridge
Direct Small Motor Driver
Relay or Peripheral Drivers
CCD Driver
Pin-Switching Network Driver
The TC4467/TC4468/TC4469 drivers can continuously
source up to 250 mA into ground referenced loads.
These devices are ideal for direct driving low current
motors or driving MOSFETs in a H-bridge configuration
for higher current motor drive (see Section 5.0 for
details). Having the logic gates onboard the driver can
help to reduce component count in many designs.
The TC4467/TC4468/TC4469 devices are very robust
and highly latch-up resistant. They can tolerate up to
5 V of noise spiking on the ground line and can handle
up to 0.5 A of reverse current on the driver outputs.
The TC4467/4468/4469 devices are available in
commercial, industrial and military temperature ranges.
Package Types
14-Pin PDIP/CERDIP
14 VDD
1A 1
1B 2
2A 3
2B 4
3A 5
13 1Y
TC4467
TC4468
TC4469
12 2Y
11 3Y
10 4Y
3B 6
9 4B
GND 7
8 4A
16-Pin SOIC (Wide)
16
15
14
13
VDD
VDD
12
3Y
11
4Y
7
10
4B
8
9
4A
1A
1B
2A
2B
1
2
3
4
3A
5
3B
6
GND
GND
TC4467
TC4468
TC4469
2001-2012 Microchip Technology Inc.
1Y
2Y
DS21425C-page 1
TC4467/TC4468/TC4469
Logic Diagrams
TC4467
TC4468
TC4469
VDD
VDD
VDD
14
14
1A
1B
1
2
13 1Y
2A
2B
3
4
12 2Y
3A
3B
5
6
11 3Y
4A
4B
8
9
10 4Y
7
GND
DS21425C-page 2
1A 1
1B 2
2A 3
2B 4
12 2Y
11 3Y
10 4Y
7
GND
VDD
14
13 1Y
3A 5
3B 6
4A 8
4B 9
TC446X
1A 1
1B 2
2A 3
2B 4
13 1Y
12 2Y
3A 5
3B 6
4A 8
4B 9
Output
11 3Y
10 4Y
7
GND
2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
1.0
ELECTRICAL
CHARACTERISTICS
†Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings†
Supply Voltage ...............................................................+20 V
Input Voltage ............................. (GND – 5 V) to (VDD + 0.3 V)
Package Power Dissipation: (TA 70°C)
PDIP...................................................................800 mW
CERDIP .............................................................840 mW
SOIC ..................................................................760 mW
Package Thermal Resistance:
CERDIP RJ-A ...................................................100°C/W
CERDIP RJ-C .....................................................23°C/W
PDIP RJ-A ..........................................................80°C/W
PDIP RJ-C ..........................................................35°C/W
SOIC RJ-A ..........................................................95°C/W
SOIC RJ-C ..........................................................28°C/W
Operating Temperature Range:
C Version ................................................... 0°C to +70°C
E Version.................................................-40°C to +85°C
M Version ..............................................-55°C to +125°C
Maximum Chip Temperature ....................................... +150°C
Storage Temperature Range .........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V VDD18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic 1, High Input Voltage
VIH
2.4
—
VDD
V
Note 3
Logic 0, Low Input Voltage
VIL
—
—
0.8
V
Note 3
Input Current
IIN
-1.0
—
+1.0
µA
0 VVINVDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
ILOAD = 100 µA (Note 1)
Low Output Voltage
VOL
—
—
0.15
V
ILOAD = 10 mA (Note 1)
Output Resistance
RO
—
10
15
IOUT = 10 mA, VDD = 18 V
Peak Output Current
IPK
—
1.2
—
A
Continuous Output Current
IDC
—
—
300
mA
—
—
500
I
—
500
—
mA
Rise Time
tR
—
15
25
nsec
Figure 4-1
Fall Time
tF
—
15
25
nsec
Figure 4-1
Delay Time
tD1
—
40
75
nsec
Figure 4-1
Delay Time
tD2
—
40
75
nsec
Figure 4-1
Power Supply Current
IS
—
1.5
4
mA
Power Supply Voltage
VDD
4.5
—
18
V
Output
Latch-Up Protection Withstand
Reverse Current
Single Output
Total Package
4.5 VVDD 16 V
Switching Time (Note 1)
Power Supply
Note
1:
2:
3:
Note 2
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
2001-2012 Microchip Technology Inc.
DS21425C-page 3
TC4467/TC4468/TC4469
ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES)
Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V VDD18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic 1, High Input Voltage
VIH
2.4
—
—
V
Logic 0, Low Input Voltage
VIL
—
—
0.8
V
Note 3
Input Current
IIN
-10
—
10
µA
0 VVINVDD
High Output Voltage
VOH
VDD – 0.025
—
—
V
ILOAD = 100 µA (Note 1)
Input
Note 3
Output
Low Output Voltage
VOL
—
—
0.30
V
ILOAD = 10 mA (Note 1)
Output Resistance
RO
—
20
30
IOUT = 10 mA, VDD = 18 V
Peak Output Current
IPK
—
1.2
—
A
Continuous Output Current
IDC
—
—
300
mA
Single Output
—
—
500
I
—
500
—
mA
Rise Time
tR
—
15
50
nsec
Fall Time
tF
—
15
50
nsec
Figure 4-1
Delay Time
tD1
—
40
100
nsec
Figure 4-1
Delay Time
tD2
—
40
100
nsec
Figure 4-1
Latch-Up Protection Withstand
Reverse Current
Total Package
4.5 VVDD 16 V
Switching Time (Note 1)
Figure 4-1
Power Supply
Power Supply Current
IS
—
—
8
mA
Power Supply Voltage
VDD
4.5
—
18
V
Note
1:
2:
3:
Note 2
Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
TRUTH TABLE
Part No.
TC4467 NAND
Inputs A
H
H
L
TC4468 AND
L
H
H
L
TC4469 AND/INV
L
H
H
L
L
Inputs B
H
L
H
L
H
L
H
L
H
L
H
L
Outputs TC446X
L
H
H
H
H
L
L
L
L
H
L
L
Legend: H = High
L = Low
DS21425C-page 4
2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
TA = +25°C, with 4.5 V VDD18 V.
140
140
2200
0 pF
p
120 2200 pF
100
1600 pF
p
80
1000 pF
100
tFALL (nsec)
tRISE (nsec)
120
60
1000 pF
60
470 pF
40
470 pF
20
100 pF
20
100 pF
p
3
5
7
FIGURE 2-1:
Voltage.
9
11
13
VSUPPLY (V)
15
0
19
17
Rise Time vs. Supply
5
7
9
11
13
VSUPPLY (V)
15
19
17
Fall Time vs. Supply
140
120
5V
120
5V
100
tFALL (nsec)
100
80
10 V
15 V
60
80
40
20
20
0
100
FIGURE 2-2:
Load.
0
100
10,000
1000
CLOAD (pF)
Rise Time vs. Capacitive
10 V
15 V
60
40
10,000
1000
CLOAD (pF)
FIGURE 2-5:
Load.
25
Fall Time vs. Capacitive
80
VSUPPLY = 17.5 V
CLOAD = 470 pF
CLOAD = 4
470 pF
DELAY TIME (nsec)
20
3
FIGURE 2-4:
Voltage.
140
tRISE (nsec)
80
40
0
TIME (nsec)
1500 pF
tFALL
15
tRISE
10
60
tD1
40
tD2
20
5
0
-50
0
-25
0
25
50
75
100
125
4
6
TEMPERATURE (°C)
FIGURE 2-3:
Temperature.
Rise/Fall Times vs.
2001-2012 Microchip Technology Inc.
8
10
12
14
16
18
VSUPPLY (V)
FIGURE 2-6:
Supply Voltage.
Propagation Delay Time vs.
DS21425C-page 5
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
TA = +25°C, with 4.5 V VDD18 V.
140
70
VDD = 12 V
VDD = 17.5 V
= 470 pF
VIN
INPUT RISING
DELAY TIME (nsec)
DELAY TIME (nsec)
120
100
tD2
80
60
tD1
INPUT FALLING
40
tD1
50
tD2
40
30
20
0
60
1
2
3
4
FIGURE 2-7:
Times.
5
6
VDRIVE (V)
7
8
20
-60
10
9
Input Amplitude vs. Delay
-40
-20
0
FIGURE 2-10:
vs. Temperatures.
20
40
60
°C)
80
100
120
Propagation Delay Times
3.5
2.5
VDD = 17.5 V
2.0
IQUIESCENT (mA)
IQUIESCENT (mA)
3.0
OUTPUTS = 0
1.5
1.0
OUTPUTS = 1
0.5
6
8
10
12
VSUPPLY (V)
14
16
OUTPUTS = 1
1.0
-40
-20
0
FIGURE 2-11:
vs. Temperature.
20
40
60
TJUNCTION (°C)
80
100
120
Quiescent Supply Current
35
35
30
30
TJ = +150°C
25
RDS(ON) (Ω)
25
RDS(ON) (Ω)
1.5
0
-60
18
FIGURE 2-8:
Quiescent Supply Current
vs. Supply Voltage.
20
TJ = +25°C
15
20
10
5
5
4
6
FIGURE 2-9:
Resistance.
DS21425C-page 6
8
10
12
V SUPPLY (V)
14
High-State Output
16
18
TJ = +150°C
15
10
0
OUTPUTS = 0
2.0
0.5
0
4
2.5
0
TJ = +25°C
4
6
FIGURE 2-12:
Resistance.
8
10
12
V SUPPLY (V)
14
16
18
Low-State Output
2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note:
(Load on single output only).
60
60
VDD = 18 V
50
1000 pF
40
30
50
00 kHz
20
200 kHz
10
0
100
FIGURE 2-13:
Capacitive Load.
30
20
100 pF
p
0
10
10,000
Supply Current vs.
100
1000
FREQUENCY (kHz)
FIGURE 2-16:
Frequency.
60
2 MHz
Supply Current vs.
2200 pF
VDD = 12 V
50
50
ISUPPLY (mA)
40
1 MHz
30
20
500 kHz
10
FIGURE 2-14:
Capacitive Load.
40
1000 pF
p
30
20
100 pF
10
200 kHz
0
100
20 kHz
0
10,000
1000
CLOAD (pF)
Supply Current vs.
10
100
FREQUENCY (kHz)
FIGURE 2-17:
Frequency.
60
1000
10,000
Supply Current vs.
60
VDD = 6 V
VDD = 6 V
50
50
40
40
30
ISUPPLY (mA)
ISUPPLY (mA)
10,000
60
VDD = 12 V
ISUPPLY (mA)
40
10
20 kHz
1000
CLOAD (pF)
2200 pF
50
1 MH
MHz
ISUPPLY (mA)
ISUPPLY (mA)
VDD = 18 V
2 MH
Hz
2 MHz
20
1 MHz
500 kHz
200 kHz
20 kHz
10
0
100
FIGURE 2-15:
Capacitive Load.
1000
CLOAD (pF)
Supply Current vs.
2001-2012 Microchip Technology Inc.
2200 pF
30
20
1000 pF
10
100 pF
10,000
0
10
FIGURE 2-18:
Frequency.
100
1000
FREQUENCY (kHz)
10,000
Supply Current vs.
DS21425C-page 7
TC4467/TC4468/TC4469
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
14-Pin PDIP,
CERDIP
16-Pin SOIC
(Wide)
Symbol
Symbol
1A
1A
Input A for Driver 1, TTL/CMOS Compatible Input
1B
1B
Input B for Driver 1, TTL/CMOS Compatible Input
2A
2A
Input A for Driver 2, TTL/CMOS Compatible Input
2B
2B
Input B for Driver 2, TTL/CMOS Compatible Input
3A
3A
Input A for Driver 3, TTL/CMOS Compatible Input
Input B for Driver 3, TTL/CMOS Compatible Input
3B
3B
GND
GND
Description
Ground
—
GND
4A
4A
Input A for Driver 4, TTL/CMOS Compatible Input
Ground
4B
4B
Input B for Driver 4, TTL/CMOS Compatible Input
4Y
4Y
Output for Driver 4, CMOS Push-Pull Output
3Y
3Y
Output for Driver 3, CMOS Push-Pull Output
2Y
2Y
Output for Driver 2, CMOS Push-Pull Output
Output for Driver 1, CMOS Push-Pull Output
1Y
1Y
VDD
VDD
Supply Input, 4.5 V to 18 V
—
VDD
Supply Input, 4.5 V to 18 V
DS21425C-page 8
2001-2012 Microchip Technology Inc.
TC4467/TC4468/TC4469
4.0
DETAILED DESCRIPTION
4.4
4.1
Supply Bypassing
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 µF film capacitor in parallel with one or two
low-inductance, 0.1 µF ceramic disk capacitors with
short lead lengths (