TC6321
N- and P-Channel Enhancement-Mode MOSFET Pair
Features
Description
•
•
•
•
•
•
•
•
•
The TC6321 consists of high-voltage, low-threshold
N-channel and P-channel MOSFETs in an 8-Lead
VDFN package. Both MOSFETs have integrated
gate-to-source
resistors
and
gate-to-source
Zener diode clamps, which are desired for high-voltage
pulser applications.
Integrated Gate-to-Source Resistor
Integrated Gate-to-Source Zener Diode
Low Threshold
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
Free from Secondary Breakdown
Low Input and Output Leakage
Independent, Electrically Isolated N- and
P-Channels
• 8-Lead Very Thin Plastic Dual Flat, No Lead,
6 x 5 mm VDFN Package
Applications
•
•
•
•
•
•
High-Voltage Pulser
Amplifiers
Buffers
Piezoelectric Transducer Drivers
General-Purpose Line Drivers
Logic-Level Interfaces
The TC6321 is a complimentary, high-speed,
high-voltage, gate-clamped N- and P-channel
MOSFET pair, which utilizes an advanced vertical
DMOS structure and the well-proven silicon-gate
manufacturing process. This combination produces a
device with the power-handling capabilities of bipolar
transistors and with the high-input impedance and
positive temperature coefficient inherent in MOS
devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermallyinduced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low
threshold voltage, high breakdown voltage, high input
impedance, low input capacitance and fast switching
speeds are desired.
Package Types
TC6321
6 x 5 VDFN*
SN
1
8
DN
GN
2
7
DN
GP
3
6
DP
SP
4
5
DP
* Includes Dual Exposed Thermal Pads (EP);
see Table 3-1.
2017 Microchip Technology Inc.
DS20005724A-page 1
TC6321
Typical Application Circuit
+100V
VDD VH
10 nF
OE
INA
INB
10 nF
VSS VL
MD12XX, MD17XX,
MD18XX
TC6321
-100V
Functional Block Diagram
SN
GN
DN
N-Channel
DN
P-Channel
DS20005724A-page 2
GP
DP
SP
DP
2017 Microchip Technology Inc.
TC6321
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Drain-to-Source Voltage..........................................................................................................................................BVDSX
Drain-to-Gate Voltage ............................................................................................................................................ BVDGX
Operating and Storage Temperature.......................................................................................................-55°C to +175°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise noted, TA = TJ = +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Drain-to-Source Breakdown
Voltage
BVDSS
200
—
—
V
VGS = 0V, ID = 2.0 mA
Gate Threshold Voltage
VGS(th)
1.0
—
2.0
V
VGS = VDS, ID = 1.0 mA
∆VGS(th)
—
—
–4.5
mV/ºC
VGS = VDS, ID = 1.0 mA
(Note 2)
Gate-to-Source Shunt Resistor
RGS
10
—
50
kΩ
IGS = 100 μA
Gate-to-Source Zener Voltage
VZGS
13.2
—
25
V
IGS = 2 mA
—
—
10.0
μA
VDS = 200V
VGS = 0V
—
—
1.0
mA
VDS = 200V, VGS = 0V
TJ = +125°C (Note 2)
1.0
—
—
A
VGS = 4.5V, VDS = 25V
2.0
—
—
—
—
8.0
—
—
7.0
∆RDS(ON)
—
—
1.0
%/ºC
Forward Transconductance
GFS
400
—
—
mmho
Input Capacitance
CISS
—
—
110
Common Source Output
Capacitance
COSS
—
—
60
Reverse Transfer Capacitance
CRSS
—
—
23
Turn-On Delay Time
td(ON)
—
—
10
tr
—
—
15
td(OFF)
—
—
20
tf
—
—
15
DC Parameters (Note 1)
Change in VGS(th) with
Temperature
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(ON)
Static Drain-to-Source On-State
Resistance
Change in RDS(ON) with
Temperature
RDS(ON)
VGS = 10V, VDS = 25V
Ω
VGS = 4.5V, ID = 150 mA
VGS = 10V, ID = 1.0A
VGS = 4.5V, ID = 150 mA
(Note 2)
AC Parameters (Note 2)
Rise Time
Turn-Off Delay Time
Fall Time
Note 1:
2:
VGS = 25V, ID= 500 mA
pF
VGS = 0V
VDS = 25V
f = 1.0 MHz
ns
VGS = 10V
VDS = 25V
ID = 1.0A
RGEN = 25Ω
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
2017 Microchip Technology Inc.
DS20005724A-page 3
TC6321
N-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS (CONTINUED)
Unless otherwise noted, TA = TJ = +25°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
VSD
—
—
1.8
V
VGS= 0V, ISD= 500 mA
(Note 1)
trr
—
100
—
ns
VGS = 0V, ISD = 500 mA
diF/dt = 25 A/µ (Note 2)
Diode Parameters
Diode Forward Voltage Drop
Reverse Recovery Time
Note 1:
2:
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS
Unless otherwise noted, TA = TJ = +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Condition
Drain-to-Source Breakdown
Voltage
BVDSS
–200
—
—
V
VGS= 0V, ID= –2.0 mA
Gate Threshold Voltage
VGS(th)
–1.0
—
–2.4
V
VGS = VDS, ID = –1.0 mA
∆VGS(th)
—
—
4.5
mV/ºC
VGS = VDS, ID = –1.0 mA
(Note 2)
Gate-to-Source Shunt Resistor
RGS
10
—
50
kΩ
IGS = 100 μA
Gate-to-Source Zener Voltage
VZGS
13.2
—
25
V
IGS = –2 mA
Zero Gate Voltage Drain
Current
—
—
–10.0
μA
VDS = 200V, VGS = 0V
IDSS
—
—
–1.0
mA
VDS = 200V, VGS = 0V
TJ = +125°C, (Note 2)
On-State Drain Current
ID(ON)
–1.0
—
—
–2.0
—
—
—
—
10
—
—
8.0
∆RDS(ON)
—
—
1.0
%/°C
VGS = –25V, ID = –200 mA
(Note 2)
Forward Transconductance
GFS
400
—
—
mmho
VGS = –25V, ID = –500 mA
Input Capacitance
CISS
—
—
200
Common Source Output
Capacitance
COSS
—
—
55
Reverse Transfer Capacitance
CRSS
—
—
30
Turn-On Delay Time
td(ON)
—
—
10
tr
—
—
15
td(OFF)
—
—
20
tf
—
—
15
DC Parameters (Note 1)
Change in VGS(th) with
Temperature
Static Drain-to-Source On-State
Resistance
Change in RDS(ON) with
Temperature
RDS(ON)
A
VGS = –4.5V, VDS = –25V
VGS = –10V, VDS = –25V
VGS = –4.5V, ID = –150 mA
VGS = –10V, ID = –1.0A
AC Parameters (Note 2)
Rise Time
Turn-Off Delay Time
Fall Time
Note 1:
2:
pF
ns
VGS = 0V
VDS = –25V
f = 1.0 MHz
VGS = –10V
VDS = –25V
ID = –1.0A
RGEN = 25Ω
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
DS20005724A-page 4
2017 Microchip Technology Inc.
TC6321
P-CHANNEL DC AND AC ELECTRICAL CHARACTERISTICS (CONTINUED)
Unless otherwise noted, TA = TJ = +25°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Condition
VSD
—
—
–1.8
V
VGS= 0V, ISD= –500 mA
(Note 1)
trr
—
100
—
ns
VGS = 0V, ISD = –500 mA
diF/dt = -25 A/µs (Note 2)
Diode Parameters
Diode Forward Voltage Drop
Reverse Recovery Time
Note 1:
2:
Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameters
Sym.
Min.
Typ.
Max.
Units
Operating Temperature
TJ
–40
—
+150
°C
Storage Temperature
TA
–55
—
+175
°C
JC
—
1.43
—
°C/W
JA
—
34.4
—
°C/W
Conditions
Temperature Ranges
Thermal Package Resistances
Thermal Resistance,
6x5 mm VDFN-8LD
2017 Microchip Technology Inc.
DS20005724A-page 5
TC6321
NOTES:
DS20005724A-page 6
2017 Microchip Technology Inc.
TC6321
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
3.50
-3.50
3.00
-3.00
2.50
-2.50
2.00
-2.00
ID (A)
ID (A)
Note: Unless otherwise indicated, TA = TJ = 25°C.
1.50
1.00
-1.00
0.50
-0.50
0.00
0.00
0
50
100
VDS (V)
150
3.0
VGS = 4.5V, ID = 150 mA
VGS = 10V, ID = 1A
2.5
1.5
1.0
0.5
0.0
-25
0
25
50
75 100
Temperature (°C)
FIGURE 2-2:
vs. Temperature.
3.5
125
-100
VDS (V)
-150
-200
VGS = -4.5V, ID = -150 mA
VGS = -10V, ID = -1A
2.5
2.0
-55
-50
FIGURE 2-4:
P-Channel ID vs. VDS
(Output Characteristics).
RDS(ON) (normalized)
RDS(ON) (normalized)
3.0
0
200
FIGURE 2-1:
N-Channel ID vs. VDS
(Output Characteristics).
150
N-Channel On-Resistance
2.0
1.5
1.0
0.5
0.0
175
-55
-3.5
VDS = +25V
3.0
-3.0
2.5
-2.5
2.0
-2.0
1.5
-25
0
25
50
75 100
Temperature (°C)
FIGURE 2-5:
vs. Temperature.
ID (A)
ID (A)
-1.50
125
150
175
P-Channel On-Resistance
VDS = -25V
-1.5
-1.0
1.0
-0.5
0.5
Temp. = 25&
Temp. = 25 C
0.0
0.0
0
1
FIGURE 2-3:
2
3
4
5
VGS (V)
6
7
8
N-Channel ID vs. VGS.
2017 Microchip Technology Inc.
9
10
0
-1
FIGURE 2-6:
-2
-3
-4
-5
-6
VGS (V)
-7
-8
-9
-10
P-Channel ID vs. VGS.
DS20005724A-page 7
TC6321
Note: Unless otherwise indicated, TA = TJ = 25°C.
20
16
16
14
14
12
12
10
8
6
8
6
4
2
2
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50
0
0.00 -0.25 -0.50 -0.75 -1.00 -1.25 -1.50 -1.75 -2.00 -2.25 -2.50 -2.75 -3.00 -3.25 -3.50
FIGURE 2-7:
vs. Drain Current.
350
N-Channel On-Resistance
ID (A)
FIGURE 2-10:
vs. Drain Current.
350
CISS
COSS
CRSS
f = 1 MHz
300
P-Channel On-Resistance
CISS
COSS
CRSS
f = 1MHz
300
250
Capacitance (pF)
Capacitance (pF)
10
4
ID (A)
200
150
100
250
200
150
100
50
50
0
0
0
10
20
VDS (V)
30
0
40
FIGURE 2-8:
N-Channel Capacitance vs.
Drain-to-Source Voltage.
1.20
1.20
1.10
1.10
1.00
0.90
0.80
0.70
0.60
-10
-20
VDS (V)
-30
-40
FIGURE 2-11:
P-Channel Capacitance vs.
Drain-to-Source Voltage.
VGS(th) (normalized)
VGS(th) (normalized)
VGS = -4.5V
VGS = -10V
18
RDS(ON) ()
RDS(ON) ()
20
VGS = 4.5V
VGS = 10V
18
1.00
0.90
0.80
0.70
0.60
-55
-25
0
FIGURE 2-9:
Temperature.
DS20005724A-page 8
25
50
75 100 125 150 175
Temperature (°C)
N-Channel VGS(th) vs.
-55
-25
FIGURE 2-12:
Temperature.
0
25
50
75 100 125 150 175
Temperature (°C)
P-Channel VGS(th) vs.
2017 Microchip Technology Inc.
TC6321
1.20
1.20
1.15
1.15
1.10
1.10
BVDSS (normalized)
BVDSS (normalized)
Note: Unless otherwise indicated, TA = TJ = 25°C.
1.05
1.00
0.95
0.90
0.85
0.80
1.05
1.00
0.95
0.90
0.85
0.80
-55
-25
FIGURE 2-13:
Temperature.
0
25
50
75 100 125 150 175
Temperature (°C)
N-Channel BVDSS vs.
2017 Microchip Technology Inc.
-55
-25
FIGURE 2-14:
Temperature.
0
25
50
75 100 125 150 175
Temperature (°C)
P-Channel BVDSS vs.
DS20005724A-page 9
TC6321
NOTES:
DS20005724A-page 10
2017 Microchip Technology Inc.
TC6321
3.0
PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
TC6321
6x5 VDFN
PIN FUNCTION TABLE
Name
Description
1
SN
Source N-Channel
2
GN
Gate N-Channel
3
GP
Gate P-Channel
4
SP
Source P-Channel
5, 6
DP
Drain P-Channel
7,8
DN
Drain N-Channel
9
EP
Dual Exposed Thermal Pads
2017 Microchip Technology Inc.
DS20005724A-page 11
TC6321
NOTES:
DS20005724A-page 12
2017 Microchip Technology Inc.
TC6321
4.0
FUNCTIONAL DESCRIPTION
4.1
N-Channel Switching Waveforms
and Test Circuit
Figure 4-1 shows the N-channel switching waveforms
and test circuit.
10 V
Input
RL
10%
0V
VDD
90%
VDD
t(ON)
td(ON) tr
t(OFF)
td(OFF) tf
10%
10%
Output
RGEN
Input
Output
90%
0V
FIGURE 4-1:
4.2
90%
VSOURCE
TC6321
N-Channel Switching Waveforms and Test Circuit.
P-Channel Switching Waveforms
and Test Circuit
Figure 4-2 shows the P-channel switching waveforms
and test circuit.
0V
10%
Input
-10 V
90%
t(ON)
td(ON)
tr
0V
Output
VSS
FIGURE 4-2:
RGEN
t(OFF)
td(OFF) tf
Input TC6321
90% 90%
10%
10%
VSOURCE
Output
RL
VSS
P-Channel Switching Waveforms and Test Circuit.
2017 Microchip Technology Inc.
DS20005724A-page 13
TC6321
NOTES:
DS20005724A-page 14
2017 Microchip Technology Inc.
TC6321
5.0
APPLICATION INFORMATION
The TC6321 N- and P-MOSFET pair is designed for a
wide range of switching and amplifying applications
where high-voltage, high-current drive and fast
switching speeds are required, especially for medical
ultrasound applications.
A typical application pairs the TC6321 with any of
MD12xx, MD17xx, or MD18xx ultrasound family
MOSFET Drivers in order to form a high-speed and
high-voltage (+/–100V 2.5A) pulser circuit. Figure 5-1
illustrates the application circuit digram for a two level
pulser.
+100V
VDD VH
10 nF
OE
INA
INB
10 nF
VSS VL
MD12XX, MD17XX,
MD18XX
FIGURE 5-1:
TC6321
-100V
TC6321 - Application Circuit Diagram.
2017 Microchip Technology Inc.
DS20005724A-page 15
TC6321
NOTES:
DS20005724A-page 16
2017 Microchip Technology Inc.
TC6321
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
8-Lead VDFN (6 x 5 mm)
Example
TC6321
V/9U e3
1640
256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2017 Microchip Technology Inc.
DS20005724A-page 17
TC6321
8-Lead Very Thin Plastic Dual Flat, No Lead (9U) - 6x5 mm Body [VDFN]
With Dual Exposed Pads
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
2X
0.10 C
A
B
N
(DATUM A)
(DATUM B)
NOTE 1
E
E
4
1
2
2X
D
4
0.10 C
TOP VIEW
A1
0.10 C
C
A
SEATING
PLANE
8X
A3
SIDE VIEW
0.08 C
e
(K4)
2X
0.10
C A B
2X D2
1
2
4X (K1)
2X
0.10
C A B
8X L
NOTE 1
2X E2
4X (K2)
N
(K3)
8X b
0.10
0.05
e
2
C A B
C
BOTTOM VIEW
Microchip Technology Drawing C04-413A Sheet 1 of 2
DS20005724A-page 18
2017 Microchip Technology Inc.
TC6321
8-Lead Very Thin Plastic Dual Flat, No Lead (9U) - 6x5 mm Body [VDFN]
With Dual Exposed Pads
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units
Dimension Limits
Number of Terminals
N
e
Pitch
A
Overall Height
Standoff
A1
A3
Terminal Thickness
Overall Length
D
Exposed Pad Length (X2)
D2
E
Overall Width
E2
Exposed Pad Width (X2)
b
Terminal Width
L
Terminal Length
Terminal to Exposed Pad (X4)
K1
Terminal to Exposed Pad (X4)
K2
K3
Molded Package Edge to Exposed Pad
K4
Exposed Pad to Exposed Pad
MIN
0.80
0.00
2.25
3.15
0.35
0.55
MILLIMETERS
NOM
8
1.27 BSC
0.85
0.02
0.20 REF
6.00 BSC
2.35
5.00 BSC
3.25
0.40
0.60
0.35 REF
0.20 REF
0.35 REF
0.60 REF
MAX
0.90
0.05
2.45
3.35
0.45
0.65
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package is saw singulated
3. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-413A Sheet 2 of 2
2017 Microchip Technology Inc.
DS20005724A-page 19
TC6321
DS20005724A-page 20
2017 Microchip Technology Inc.
TC6321
APPENDIX A:
REVISION HISTORY
Revision A (March 2017)
• Original Release of this Document.
2017 Microchip Technology Inc.
DS20005724A-page 21
TC6321
NOTES:
DS20005724A-page 22
2017 Microchip Technology Inc.
TC6321
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X/
XX
Examples:
Device Temperature Package
Device:
TC6321T:
N- and P-Channel Enhancement-Mode
MOSFET Pair, Tape and Reel
Temperature:
V
= -55°C to +175°C (Various temperature levels) ( 1)
Package Type:
9U
= Very Thin Plastic Dual Flat, No Lead, VDFN,
8-Lead, 6x5 mm Body, with Dual Exposed Pads
2017 Microchip Technology Inc.
a) TC6321T-E/MQ:
Note
1:
Tape and Reel,
Various temperature levels,
8-LD VDFN package
Shipment of these devices may require an
end-use/end-user certificate per SPI-43508.
DS20005724A-page 23
TC6321
NOTES:
DS20005724A-page 24
2017 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
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arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,
CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST
Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,
CodeGuard, CryptoAuthentication, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial
Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,
KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,
MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple
Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,
SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC,
USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and
ZENA are trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip
Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip Technology
Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2017, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-1396-7
== ISO/TS 16949 ==
2017 Microchip Technology Inc.
DS20005724A-page 25
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Finland - Espoo
Tel: 358-9-4520-820
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Novi, MI
Tel: 248-848-4000
Houston, TX
Tel: 281-894-5983
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Raleigh, NC
Tel: 919-844-7510
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005724A-page 26
China - Dongguan
Tel: 86-769-8702-9880
China - Guangzhou
Tel: 86-20-8755-8029
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-3326-8000
Fax: 86-21-3326-8021
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7830
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
France - Saint Cloud
Tel: 33-1-30-60-70-00
Germany - Garching
Tel: 49-8931-9700
Germany - Haan
Tel: 49-2129-3766400
Germany - Heilbronn
Tel: 49-7131-67-3636
Germany - Karlsruhe
Tel: 49-721-625370
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Rosenheim
Tel: 49-8031-354-560
Israel - Ra’anana
Tel: 972-9-744-7705
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Padova
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Norway - Trondheim
Tel: 47-7289-7561
Poland - Warsaw
Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
2017 Microchip Technology Inc.
11/07/16
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