EVALUATION
KIT
AVAILABLE
TC7662B
CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
FEATURES
GENERAL DESCRIPTION
■
■
■
■
The TC7662B is a pin-compatible upgrade to the Industry standard TC7660 charge pump voltage converter. It
converts a +1.5V to +15V input to a corresponding – 1.5 to
– 15V output using only two low-cost capacitors, eliminating
inductors and their associated cost, size and EMI.
The on-board oscillator operates at a nominal frequency of 10kHz. Frequency is increased to 35kHz when
pin 1 is connected to V+, allowing the use of smaller external
capacitors. Operation below 10kHz (for lower supply current
applications) is also possible by connecting an external
capacitor from OSC to ground (with pin 1 open).
The TC7662B is available in both 8-pin DIP and 8-pin
small outline (SO) packages in commercial and extended
temperature ranges.
■
Wide Operating Voltage Range: 1.5V to 15V
Boost Pin (Pin 1) for Higher Switching Frequency
High Power Efficiency is 96%
Easy to Use – Requires Only 2 External Non-Critical
Passive Components
Improved Direct Replacement for Industry Standard ICL7660 and Other Second Source Devices
APPLICATIONS
■
■
■
■
■
Simple Conversion of +5V to ±5V Supplies
Voltage Multiplication VOUT = ±nVIN
Negative Supplies for Data Acquisition Systems
and Instrumentation
RS232 Power Supplies
Supply Splitter, VOUT = ±VS/2
PIN CONFIGURATION (DIP AND SOIC)
8 V+
BOOST 1
CAP + 2
8 V+
BOOST 1
CAP + 2
7 OSC
GND 3 TC7662BCPA 6 LOW
VOLTAGE (LV)
TC7662BEPA
5 VOUT
CAP – 4
GND 3
CAP – 4
7 OSC
TC7662BCOA 6 LOW
VOLTAGE (LV)
TC7662BEOA
5 VOUT
ORDERING INFORMATION
Temperature
Range
Part No.
Package
TC7662BCOA
8-Pin SOIC
TC7662BCPA
8-Pin Plastic DIP
TC7662BEOA
8-Pin SOIC
– 40°C to +85°C
TC7662BEPA
8-Pin Plastic DIP
– 40°C to +85°C
TC7660EV
Evaluation Kit for
Charge Pump Family
0°C to +70°C
0°C to +70°C
FUNCTIONAL BLOCK DIAGRAM
V + CAP +
8
BOOST
OSC
LV
2
1
7
RC
OSCILLATOR
÷2
VOLTAGE–
LEVEL
TRANSLATOR
4
CAP –
6
5
VOUT
INTERNAL
VOLTAGE
REGULATOR
LOGIC
NETWORK
TC7662B
3
GND
© 2001 Microchip Technology Inc.
DS21469A
TC7662B-8 9/11/96
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
Operating Temperature Range
C Suffix .................................................. 0°C to +70°C
E Suffix ............................................. – 40°C to +85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ...................................................... +16.5V
LV, Boost and OSC Inputs Voltage (Note 1)
V+5.5V .................................. (V+ – 5.5V) to (V+ + 0.3V)
Current Into LV (Note 1)
V+ >3.5V ............................................................ 20µA
Output Short Duration
(VSUPPLY ≤ 5.5V) ....................................... Continuous
Power Dissipation (TA ≤ 70°C) (Note 2)
Plastic DIP ...................................................... 730mW
SO ..................................................................470mW
* Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS: V+ = 5V, TA = +25°C, OSC = Free running, Test Circuit Figure 2, Unless
Otherwise Specified.
Symbol
Parameter
Test Conditions
I+
Supply Current (Note 3)
(Boost pin OPEN OR GND)
I+
Supply Current
(Boost pin = V+)
V+H
Supply Voltage Range, High
(Note 4)
Supply Voltage Range, Low
Output Source Resistance
RL = ∞, +25°C
0°C ≤ TA ≤ +70°C
– 40°C ≤ TA ≤ +85°C
– 55°C ≤TA ≤ +125°C
0°C ≤ TA ≤ +70°C
– 40°C ≤ TA ≤ +85°C
– 55°C ≤ TA ≤ +125°C
RL = 10 kΩ, LV Open, TMIN ≤ TA ≤ TMAX
+
VL
ROUT
fOSC
Oscillator Frequency
PEff
Power Efficiency
VOUTEff
ZOSC
Voltage Conversion Efficiency
Oscillator Impedance
RL = 10 kΩ, LV to GND, TMIN ≤ TA ≤ TMAX
IOUT = 20mA, 0°C ≤ TA ≤ +70°C
IOUT = 20mA, – 40°C ≤ TA ≤ +85°C
IOUT = 20mA, – 55°C ≤ TA ≤ +125°C
IOUT = 3mA, V+ = 2V, LV to GND ,
0°C ≤ TA ≤ +70°C
IOUT = 3mA, V+ = 2V, LV to GND ,
– 40°C ≤ TA ≤ +85°C
IOUT = 3mA, V+ = 2V, LV to GND ,
– 55°C ≤ TA ≤ +125°C
COSC = 0,Pin 1 Open or GND
Pin 1 = V+
RL = 5kΩ
TMIN ≤ TA ≤ TMAX
RL = ∞
V+ = 2V
V+ = 5V
Min
Typ
Max
Unit
—
—
—
—
—
80
—
—
—
—
µA
µA
µA
µA
µA
3.0
—
160
180
180
200
300
350
400
15
1.5
—
—
—
—
—
65
—
—
—
3.5
100
120
150
250
V
Ω
Ω
Ω
Ω
—
—
300
Ω
—
—
400
Ω
5
10
35
96
97
99.9
1
100
—
kHz
—
%
—
—
—
%
MΩ
kΩ
96
95
99
—
—
V
NOTES:
1. Connecting any terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no inputs from
sources operating from external supplies be applied prior to “power up” of the TC7662B.
2. Derate linearly above 50°C by 5.5 mW/°C.
3. In the test circuit, there is no external capacitor applied to pin 7. However, when the device is plugged into a test socket, there is usually a very
small but finite stray capacitance present, of the order of 5pF.
4. The TC7662B can operate without an external diode over the full temperature and voltage range. This device will function in existing designs which
incorporate an external diode with no degradation in overall circuit performance.
TC7662B-8 9/11/96
2
© 2001 Microchip Technology Inc.
DS21469A
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
DETAILED DESCRIPTION
THEORETICAL POWER EFFICIENCY
CONSIDERATIONS
The TC7662B contains all the necessary circuitry to
complete a negative voltage converter, with the exception of
two external capacitors which may be inexpensive 1µF
polarized electrolytic types. The mode of operation of the
device may be best understood by considering Figure 2,
which shows an idealized negative voltage converter. Capacitor C1 is charged to a voltage V+ for the half cycle when
switches S1 and S3 are closed. (Note: Switches S2 and S4
are open during this half cycle.) During the second half cycle
of operation, switches S2 and S4 are closed, with S1 and S3
open, thereby shifting capacitor C1 negatively by V+ volts.
Charge is then transferred from C1 to C2 such that the
voltage on C2 is exactly V+, assuming ideal switches and no
load on C2. The TC7662B approaches this ideal situation
more closely than existing non-mechanical circuits.
In the TC7662B, the four switches of Figure 2 are MOS
power switches; S1 is a P-channel device and S2, S3 and S4
are N-channel devices. The main difficulty with this approach is that in integrating the switches, the substrates of
S3 and S4 must always remain reverse biased with respect
to their sources, but not so much as to degrade their “ON”
resistances. In addition, at circuit start up, and under output
short circuit conditions (VOUT = V+), the output voltage must
be sensed and the substrate bias adjusted accordingly.
Failure to accomplish this would result in high power losses
and probable device latchup.
The problem is eliminated in the TC7662B by a logic
network which senses the output voltage (VOUT) together
with the level translators, and switches the substrates of S3
and S4 to the correct level to maintain necessary reverse
bias.
The voltage regulator portion of the TC7662B is an
integral part of the anti-latchup circuitry; however, its inherent voltage drop can degrade operation at low voltages.
Therefore, to improve low voltage operation, the “LV” pin
should be connected to GND, disabling the regulator. For
supply voltages greater than 3.5 volts, the LV terminal must
be left open to insure latchup proof operation and prevent
device damage.
V+
C1 +
10 µF
In theory, a voltage converter can approach 100%
efficiency if certain conditions are met:
A. The drive circuitry consumes minimal power.
B. The output switches have extremely low ON resistance
and virtually no offset.
C. The impedances of the pump and reservoir capacitors
are negligible at the pump frequency.
The TC7662B approaches these conditions for negative voltage conversion if large values of C1 and C2 are used.
Energy is lost only in the transfer of charge between
capacitors if a change in voltage occurs. The energy lost
is defined by:
E = 1/2 C1 (V12 – V22)
where V1 and V2 are the voltages on C1 during the pump and
transfer cycles. If the impedances of C1 and C2 are relatively
high at the pump frequency (refer to Figure 2) compared to
the value of RL, there will be a substantial difference in
voltages V1 and V2. Therefore, it is desirable not only to
make C2 as large as possible to eliminate output voltage
ripple, but also to employ a correspondingly large value for
C1 in order to achieve maximum efficiency of operation.
Dos and Don’ts
1. Do not exceed maximum supply voltages.
2. Do not connect the LV terminal to GND for supply
voltages greater than 3.5 volts.
3. Do not short circuit the output to V+ supply for voltages
above 5.5 volts for extended periods; however,
transient conditions including start-up are okay.
S1
S2
VIN
C1
IS
1
8
2
7
3 TC7662B
6
4
5
IL
V+
(+5V)
S3
S4
C2
VOUT = – VIN
RL
VO
NOTE: For large values of COSC (>1000 pF), the values
of C1 and C2 should be increased to 100 µF.
+
C2
10 µF
Figure 1. TC7662B Test Circuit
© 2001 Microchip Technology Inc.
DS21469A
Figure 2. Idealized Negative Voltage Capacitor
3
TC7662B-8 9/11/96
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
voltage and temperature (See the Output Source Resistance graphs), typically 23Ω at +25°C and 5V. Careful
selection of C1 and C2 will reduce the remaining terms,
minimizing the output impedance. High value capacitors will
reduce the 1/(fPUMP x C1) component, and low ESR capacitors will lower the ESR term. Increasing the oscillator frequency will reduce the 1/(fPUMP x C1) term, but may have the
side effect of a net increase in output impedance when C1 >
10µF and there is not enough time to fully charge the
capacitors every cycle. In a typical application when fOSC =
10kHz and C = C1 = C2 = 10µF:
4. When using polarized capacitors in the inverting mode,
the + terminal of C1 must be connected to pin 2 of the
TC7662B and the – terminal of C2 must be connected
to GND.
5. If the voltage supply driving the TC7662B has a large
source impedance (25-30 ohms), then a 2.2µF capacitor from pin 8 to ground may be required to limit the
rate of rise of the input voltage to less than 2V/µsec.
TYPICAL APPLICATIONS
Simple Negative Voltage Converter
RO ≅ 2 x 23 +
The majority of applications will undoubtedly utilize the
TC7662B for generation of negative supply voltages. Figure
3 shows typical connections to provide a negative supply
where a positive supply of +1.5V to +15V is available. Keep
in mind that pin 6 (LV) is tied to the supply negative (GND)
for supply voltages below 3.5 volts.
1
Since the ESRs of the capacitors are reflected in the
output impedance multiplied by a factor of 5, a high value
could potentially swamp out a low 1/(fPUMP x C1) term,
rendering an increase in switching frequency or filter capacitance ineffective. Typical electrolytic capacitors may have
ESRs as high as 10Ω.
8
2
3
Output Ripple
7
TC7662B
6
ESR also affects the ripple voltage seen at the output.
The total ripple is determined by 2 voltages, A and B, as
shown in Figure 4. Segment A is the voltage drop across the
ESR of C2 at the instant it goes from being charged by C1
(current flowing into C2) to being discharged through the
load (current flowing out of C2). The magnitude of this
current change is 2 x IOUT, hence the total drop is 2 x IOUT x
ESRC2 volts. Segment B is the voltage change across C2
during time t2, the half of the cycle when C2 supplies current
to the load. The drop at B is IOUT x t2/C2 volts. The peak-topeak ripple voltage is the sum of these voltage drops:
RO
5
4
–
10 µF
+
VOUT = –V+
VOUT
–
V+
+
a.
b.
Figure 3. Simple Negative Converter and its Output Equivalent
The output characteristics of the circuit in Figure 3 can
be approximated by an ideal voltage source in series with a
resistance as shown in Figure 3b. The voltage source has a
value of–(V+). The output impedance (RO) is a function of
the ON resistance of the internal MOS switches (shown in
Figure 2), the switching frequency, the value of C1 and C2,
and the ESR (equivalent series resistance) of C1 and C2. A
good first order approximation for RO is:
VRIPPLE ≅
(
)
1
2 x fPUMP x C2 + ESRC2 x IOUT
RO ≅ 2(RSW1 + RSW3 + ESRC1) + 2(RSW2 + RSW4 +
ESRC1) +
(fPUMP =
fOSC
2
1
fPUMP x C1
t2
RO ≅ 2 x RSW +
t1
+ ESRC2
0
B
, RSWX = MOSFET switch resistance)
V
Combining the four RSWX terms as RSW, we see that:
1
fPUMP x C1
A
+ 4 x ESRC1 + ESRC2Ω
– (V+)
RSW, the total switch resistance, is a function of supply
TC7662B-8 9/11/96
+ 4 x ESRC1 + ESRC2
RO ≅ (46 + 20 + 5 x ESRC) Ω
V+
10 µF
+
–
1
(5 x 103 x 10 x 10-6)
Figure 4. Output Ripple
4
© 2001 Microchip Technology Inc.
DS21469A
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
Paralleling Devices
Changing the TC7662B Oscillator Frequency
Any number of TC7662B voltage converters may be
paralleled to reduce output resistance (Figure 5). The reservoir capacitor, C2, serves all devices, while each device
requires its own pump capacitor, C1. The resultant output
resistance would be approximately:
It may be desirable in some applications (due to noise or
other considerations) to increase the oscillator frequency.
This is achieved by one of several methods described
below:
By connecting the BOOSTPin (Pin 1) to V+, the oscillator
charge and discharge current is increased and, hence the
oscillator frequency is increased by approximately 3-1/2
times. The result is a decrease in the output impedance and
ripple. This is of major importance for surface mount applications where capacitor size and cost are critical. Smaller
capacitors, e.g., 0.1µF, can be used in conjunction with the
Boost Pin in order to achieve similar output currents compared to the device free running with C1 = C2 = 1µF or 10µF.
(Refer to graph of Output Source Resistance as a Function
of Oscillator Frequency).
Increasing the oscillator frequency can also be achieved
by overdriving the oscillator from an external clock as shown
in Figure 7. In order to prevent device latchup, a 1kΩ resistor
must be used in series with the clock output. In a situation
where the designer has generated the external clock frequency using TTL logic, the addition of a 10kΩ pullup
resistor to V+ supply is required. Note that the pump frequency with external clocking, as with internal clocking, will
be 1/2 of the clock frequency. Output transitions occur on the
positive-going edge of the clock.
ROUT =
ROUT (of TC7662B)
n (number of devices)
V
1
2
C1
3
+
8
TC7662B
4
7
1
6
2
5
"1"
C1
8
RL
7
TC7662B
3
"n"
4
6
5
+
C2
Figure 5. Paralleling Devices
Cascading Devices
The TC7662B may be cascaded as shown to produce
larger negative multiplication of the initial supply voltage.
However, due to the finite efficiency of each device, the
practical limit is 10 devices for light loads. The output voltage
is defined by:
VOUT = – n(VIN)
V+
V+
1
8
2
7
1 kΩ
+
10µF
where n is an integer representing the number of devices
cascaded. The resulting output resistance would be approximately the weighted sum of the individual TC7662B
ROUT values.
3
4
TC7662B
CMOS
GATE
6
5
VOUT
+
10µF
Figure 7. External Clocking
It is also possible to increase the conversion efficiency
of the TC7662B at low load levels by lowering the oscillator
frequency. This reduces the switching losses, and is shown
in Figure 8. However, lowering the oscillator frequency will
cause an undesirable increase in the impedance of the
pump (C1) and reservoir (C2) capacitors; this is overcome by
increasing the values of C1 and C2 by the same factor that
the frequency has been reduced. For example, the addition
of a 100pF capacitor between pin 7 (Osc) and V+ will lower
the oscillator frequency to 1kHz from its nominal frequency
of 10kHz (multiple of 10), and thereby necessitate a corresponding increase in the value of C1 and C2 (from 10µF to
100µF).
V+
1
8
2
10µF
+
7
3
TC7662B
6
4
"1"
5
1
8
2
10µF
+
7
3
TC7662B
6
4
"n"
5
VOUT
+
*VOUT = –nV+
10µF
10µF
Figure 6. Cascading Devices for Increased Output Voltage
© 2001 Microchip Technology Inc.
DS21469A
5
TC7662B-8 9/11/96
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
V+
V+
C1
+
1
8
2
7
3
TC7662B
4
COSC
6
1
8
2
7
TC7662B
3
5
VOUT
+
+
C1
C2
D1
6
4
VOUT =
– (V+– VF)
5
D2
+
C3
VOUT =
(2 V +) – (2 VF)
+
C2
Figure 8. Lowering Oscillator Frequency
+
C4
Positive Voltage Doubling
Figure 10. Combined Negative Converter and Positive Doubler
The TC7662B may be employed to achieve positive
voltage doubling using the circuit shown in Figure 9. In this
application, the pump inverter switches of the TC7662B are
used to charge C1 to a voltage level of V+ – VF (where V+ is
the supply voltage and VF is the forward voltage on C1 plus
the supply voltage (V+) applied through diode D2 to capacitor
C2). The voltage thus created on C2 becomes (2 V+) – (2 VF),
or twice the supply voltage minus the combined forward
voltage drops of diodes D1 and D2.
The source impedance of the output (VOUT) will depend
on the output current, but for V+ = 5V and an output current
of 10 mA, it will be approximately 60Ω.
Voltage Splitting
The bidirectional characteristics can also be used to
split a higher supply in half, as shown in Figure 11. The
combined load will be evenly shared between the two sides
and a high value resistor to the LV pin ensures start-up.
Because the switches share the load in parallel, the output
impedance is much lower than in the standard circuits, and
higher currents can be drawn from the device. By using this
circuit, and then the circuit of Figure 6, +15V can be
converted (via +7.5V and –7.5V) to a nominal –15V, though
with rather high series resistance (~250Ω).
V+
V+
1
8
2
7
3
4
TC7662B
D1
D2
6
5
VOUT =
(2 V+) – (2 VF)
+
+
C1
C2
RL1
50 µF
VOUT =
V + –V –
2
+
50
µF
+
-
1
8
2
7
3
-
4
RL2
TC7662B
6
5
Figure 9. Positive Voltage Multiplier
50
µF
Combined Negative Voltage Conversion
and Positive Supply Multiplication
V–
Figure 10 combines the functions shown in Figures 3
and 9 to provide negative voltage conversion and positive
voltage doubling simultaneously. This approach would be,
for example, suitable for generating +9V and –5V from an
existing +5V supply. In this instance, capacitors C1 and C3
perform the pump and reservoir functions, respectively, for
the generation of the negative voltage, while capacitors C2
and C4 are pump and reservoir, respectively, for the doubled
positive voltage. There is a penalty in this configuration
which combines both functions, however, in that the source
impedances of the generated supplies will be somewhat
higher due to the finite impedance of the common charge
pump driver at pin 2 of the device.
TC7662B-8 9/11/96
+
Figure 11. Splitting a Supply in Half
6
© 2001 Microchip Technology Inc.
DS21469A
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
Regulated Negative Voltage Supply
+5 LOGIC SUPPLY
In some cases, the output impedance of the TC7662B
can be a problem, particularly if the load current varies
substantially. The circuit of Figure 12 can be used to overcome this by controlling the input voltage, via an ICL7611
low-power CMOS op amp, in such a way as to maintain a
nearly constant output voltage. Direct feedback is advisable,
since the TC7662B’s output does not respond instantaneously to change in input, but only after the switching delay.
The circuit shown supplies enough delay to accommodate
the TC7662B, while maintaining adequate feedback. An
increase in pump and storage capacitors is desirable, and
the values shown provide an output impedance of less than
5Ω to a load of 10mA.
1
8
2
7
+
1µF
–
3
4
TC7662B
16
1
4
3
RS232
DATA
OUTPUT
15
IH5142
13
6
14
5
+5V
1µF
+
-5V
Figure 13. RS232 Levels from a Single 5V Supply
–
50k
11
50k
+8V
56k
12
TTL DATA
INPUT
+8V
+
–
10µF
V+
+
100k
1
8
2
7
+
100µF
3
-
TC7662B
5
4
800k
6
250K
VOLTAGE
ADJUST
VOUT
100µF
Figure 12. Regulating the Output Voltage
© 2001 Microchip Technology Inc.
DS21469A
7
TC7662B-8 9/11/96
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
TYPICAL CHARACTERISTICS
1000
VOLTAGE CONVERSION EFFICIENCY (%)
Supply Current vs. Temperature
(with Boost Pin = VIN)
800
VIN = 12V
IDD (µA)
600
400
200
VIN = 5V
0
-40
-20
0
20
40
60
80
Voltage Conversion
101.0
100.5
Without Load
100.0
99.5
10K Load
99.0
98.5
TA = 25°C
98.0
100
1
2
3
4
5
6
7
8
9
10 11 12
TEMPERATURE (°C)
INPUT VOLTAGE VIN (V)
Output Source Resistance vs. Supply Voltage
Output Source Resistance vs. Temperature
100
OUTPUT SOURCE RESISTANCE (Ω)
OUTPUT SOURCE RESISTANCE (Ω)
100
70
50
30
IOUT = 20mA
TA = 25°C
10
1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5 11.5 12
VIN = 2.5V
80
60
VIN = 5.5V
40
20
0
-40
-20
SUPPLY VOLTAGE (V)
Output Voltage vs. Output Current
200
20
40
60
80
100
Supply Current vs. Temperature
175
-2
SUPPLY CURRENT IDD (µA)
OUTPUT VOLTAGE VOUT (V)
0
-4
-6
-8
-10
-12
0
TEMPERATURE (°C)
0
10
20
30
40
50
60
70
80
125
VIN = 12.5V
100
75
50
VIN = 5.5V
25
0
-40
90 100
OUTPUT CURRENT (mA)
TC7662B-8 9/11/96
150
-20
0
20
40
60
80
100
TEMPERATURE (°C)
8
© 2001 Microchip Technology Inc.
DS21469A
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
TYPICAL CHARACTERISTICS (cont.)
Unloaded Osc Freq vs. Temperature
with Boost Pin = VIN
Unloaded Osc Freq vs. Temperature
60
OSCILLATOR FREQUENCY (kHz)
OSCILLATOR FREQUENCY (kHz)
12
10
8
VIN = 5V
6
4
VIN = 12V
2
0
-40
-20
0
20
40
60
80
50
40
VIN = 5V
30
VIN = 12V
20
10
0
100
-40
-20
TEMPERATURE (°C)
0
20
40
60
80
100
TEMPERATURE (°C)
PACKAGE DIMENSIONS
8-Pin Plastic DIP
PIN 1
Note: For the most current package drawings,
please see the Microchip Packaging Specification
located at http://www.microchip.com/packaging
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.040 (1.02)
.020 (0.51)
.150 (3.81)
.115 (2.92)
.110 (2.79)
.090 (2.29)
.015 (0.38)
.008 (0.20)
3° MIN.
.400 (10.16)
.310 (7.87)
.022 (0.56)
.015 (0.38)
Dimensions: inches (mm)
© 2001 Microchip Technology Inc.
DS21469A
9
TC7662B-8 9/11/96
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
PACKAGE DIMENSIONS (Cont.)
8-Pin SOIC
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
Note: For the most current package drawings,
please see the Microchip Packaging Specification
located at http://www.microchip.com/packaging
.050 (1.27) TYP.
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35)
.010 (0.25)
.007 (0.18)
8° MAX.
.020 (0.51) .010 (0.25)
.013 (0.33) .004 (0.10)
.050 (1.27)
.016 (0.40)
Dimensions: inches (mm)
TC7662B-8 9/11/96
10
© 2001 Microchip Technology Inc.
DS21469A
CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC7662B
WORLDWIDE SALES AND SERVICE
AMERICAS
New York
Corporate Office
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Rocky Mountain
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
ASIA/PACIFIC (continued)
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-334-8870 Fax: 65-334-8850
Taiwan
Atlanta
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
ASIA/PACIFIC
Austin
EUROPE
China - Beijing
Australia
Analog Product Sales
8303 MoPac Expressway North
Suite A-201
Austin, TX 78759
Tel: 512-345-2030 Fax: 512-345-6085
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Boston
Analog Product Sales
Unit A-8-1 Millbrook Tarry Condominium
97 Lowell Road
Concord, MA 01742
Tel: 978-371-6400 Fax: 978-371-0050
Toronto
Microchip Technology Beijing Office
Unit 915
New China Hong Kong Manhattan Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Shanghai
Microchip Technology Shanghai Office
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Hong Kong
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Microchip Asia Pacific
RM 2101, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
Dallas
India
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Two Prestige Place, Suite 130
Miamisburg, OH 45342
Tel: 937-291-1654 Fax: 937-291-9175
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, OíShaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Detroit
Japan
Chicago
Dayton
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
Mountain View
Analog Product Sales
1300 Terra Bella Avenue
Mountain View, CA 94043-1836
Tel: 650-968-9241 Fax: 650-967-1590
Microchip Technology Intl. Inc.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea
Tel: 82-2-554-7200 Fax: 82-2-558-5934
All rights reserved. © 2001 Microchip Technology Incorporated. Printed in the USA. 1/01
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Denmark
Microchip Technology Denmark ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Arizona Microchip Technology SARL
Parc díActivite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Arizona Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Germany
Analog Product Sales
Lochhamer Strasse 13
D-82152 Martinsried, Germany
Tel: 49-89-895650-0 Fax: 49-89-895650-22
Italy
Arizona Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
Printed on recycled paper.
01/09/01
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by
updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual
property rights arising from such use or otherwise. Use of Microchipís products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights
reserved. All other trademarks mentioned herein are the property of their respective companies.
© 2001 Microchip Technology Inc.
DS21469A
11
TC7662B-8 9/11/96
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