TN0104
N-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
•
•
•
•
•
•
•
The TN0104 low-threshold, Enhancement-mode
(normally-off) transistor uses a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
1.6V Maximum Low Threshold
High Input Impedance
Low Input Capacitance
Fast Switching Speeds
Low On-Resistance
Free from Secondary Breakdown
Low Input and Output Leakage
Applications
•
•
•
•
•
•
•
Logic-Level Interfaces (Ideal for TTL and CMOS)
Solid-State Relays
Battery-Operated Systems
Photovoltaic Drives
Analog Switches
General Purpose Line Drivers
Telecommunication Switches
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Package Types
3-lead TO-92
(Top view)
3-lead SOT-89
(Top view)
DRAIN
DRAIN
SOURCE
SOURCE
DRAIN
GATE
GATE
See Table 3-1 and Table 3-2 for pin information.
2020 Microchip Technology Inc.
DS20005930A-page 1
TN0104
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ...................................................................................................................................... BVDSS
Drain-to-Gate Voltage ......................................................................................................................................... BVDGS
Gate-to-Source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. (Pulse test: 300 µs pulse, 2% duty cycle)
Parameter
Sym.
Min. Typ. Max.
Unit
Conditions
Drain-to-Source Breakdown Voltage
BVDSS
40
—
—
V
VGS = 0V, ID = 1 mA
Gate Threshold Voltage
VGS(th)
0.6
—
1.6
V
VGS = VDS, ID = 500 µA
Change in VGS(th) with Temperature
Gate Body Leakage Current
Zero-Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance
ΔVGS(th)
—
–3.8
–5
IGSS
—
0.1
100
nA
VGS = ±20V, VDS = 0V
—
—
1
µA
VGS = 0V,
VDS = Maximum rating
—
—
100
µA
VDS = 0.8 Maximum rating,
VGS = 0V, TA = 125°C
(Note 1)
—
0.35
—
A
VGS = 3V, VDS = 20V
0.5
1.1
—
A
VGS = 5V, VDS = 20V
2
2.6
—
A
VGS = 10V, VDS = 20V
IDSS
On-State Drain Current
ID(ON)
Both
packages
TO-92
RDS(ON)
SOT-89
Change in RDS(ON) with Temperature
Note 1:
V = VDS, ID = 1 mA
mV/°C GS
(Note 1)
ΔRDS(ON)
—
5
—
Ω
VGS = 3V, ID = 50 mA
—
2.3
2.5
Ω
VGS = 5V, ID = 250 mA
—
1.5
1.8
Ω
—
—
2
Ω
—
0.7
1
%/°C
VGS = 10V, ID = 1A
VGS = 10V, ID = 1A (Note 1)
Specification is obtained by characterization and is not 100% tested.
DS20005930A-page 2
2020 Microchip Technology Inc.
TN0104
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is
not 100% tested.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Forward Transconductance
GFS
340
450
—
Input Capacitance
CISS
—
—
70
pF
Common-Source Output Capacitance
COSS
—
—
50
pF
Reverse Transfer Capacitance
CRSS
—
—
15
pF
Turn-On Delay Time
td(ON)
—
3
5
ns
tr
—
7
8
ns
td(OFF)
—
6
9
ns
tf
—
5
8
ns
—
1.2
1.8
V
Rise Time
Turn-Off Delay Time
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
TO-92
SOT-89
Reverse Recovery Time
Note 1:
VSD
trr
Conditions
mmho VDS = 20V, ID = 500 mA
VGS = 0V,
VDS = 20V,
f = 1 MHz
VDD = 20V,
ID = 1A,
RGEN = 25Ω
VGS = 0V, ISD = 1A (Note 1)
—
—
2
V
VGS = 0V, ISD = 0.5A (Note 1)
—
300
—
ns
VGS = 0V, ISD = 1A
All DC parameters are 100% tested at 25°C unless otherwise stated.
(Pulse test: 300 µs pulse, 2% duty cycle)
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ.
Max.
Unit
Operating Ambient Temperature
TA
–55
—
+150
°C
Storage Temperature
TS
–55
—
+150
°C
3-lead TO-92
JA
—
132
—
°C/W
3-lead SOT-89
JA
—
133
—
°C/W
Conditions
TEMPERATURE RANGE
PACKAGE THERMAL RESISTANCE
THERMAL CHARACTERISTICS
ID (Note 1)
(Continuous)
(mA)
ID
(Pulsed)
(A)
3-lead TO-92
450
2.4
1
450
2.4
3-lead SOT-89
630
2.9
1.6 (Note 1)
630
2.9
Package
Note 1:
Power Dissipation
IDR (Note 1)
at TA = 25°C
(mA)
(W)
IDRM
(A)
ID (continuous) is limited by maximum rated TJ.
2020 Microchip Technology Inc.
DS20005930A-page 3
TN0104
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
3.75
3.75
3.00
3.00
ID (amperes)
ID (amperes)
VGS = 10V
2.25
8V
6V
1.50
VGS = 10V
2.25
8V
1.50
6V
4V
0.75
0.75
4V
2V
2V
0
0
10
20
30
0
0
40
2
4
Output Characteristics.
FIGURE 2-4:
0.75
Saturation Characteristics.
(TA = 25OC)
TA = -55OC
0.60
4
TA = 25OC
0.45
PD (watts)
GFS (siemens)
10
5
VDS = 25V
TA = 125OC
0.30
3
2
TO-243AA
0.15
TO-92
1
0
0
0
0.5
1.0
1.5
2.0
0
2.5
25
50
ID (amperes)
FIGURE 2-2:
Current.
75
100
125
150
TC (OC)
Transconductance vs. Drain
FIGURE 2-5:
Temperature.
10
Power Dissipation vs. Case
1.0
Thermal Resistance (normalized)
ID (amperes)
8
VDS (volts)
VDS (volts)
FIGURE 2-1:
6
0.0 TO-92 (DC)
TO-243AA (DC)
0.1
0.8
TO-243AA
PD = 1.6W
TA = 25OC
0.6
0.4
0.2
TO-92
PD = 1.0W
TC = 25OC
O
0.01
0.1
(TA = 25 C)
1.0
10
100
0
0.001
VDS (volts)
FIGURE 2-3:
Operating Area.
DS20005930A-page 4
Maximum Rated Safe
0.01
0.1
1.0
10
tP (seconds)
FIGURE 2-6:
Characteristics.
Thermal Response
2020 Microchip Technology Inc.
1.3
10
1.2
8
VGS = 5.0V
1.1
RDS(ON) (Ω)
BVDSS (normalized)
TN0104
1.0
0.9
6
VGS = 10V
4
2
0.8
-50
0
50
100
0
150
0
1
Tj (OC)
FIGURE 2-7:
Temperature.
2
ID (amperes)
FIGURE 2-10:
Current.
BVDSS Variation with
3.0
On-Resistance vs. Drain
1.4
1.4
1.2
1.2
TA = -55OC
VDS = 25V
VGS(th) (normalized)
ID (amperes)
1.8
125OC
1.2
RDS(ON) @ 5.0V, 0.25A
0.8
0
2
4
6
8
10
0.6
0.4
-50
0
50
0.4
150
100
Tj (OC)
VGS (volts)
FIGURE 2-8:
1.0
0.8
V(th) @ 0.5mA
0.6
0.6
0
1.0
RDS(ON) (normalized)
25OC
2.4
Transfer Characteristics.
FIGURE 2-11:
Temperature.
V(th) and RDS Variation with
10
100
VDS = 10V
f = 1MHz
8
55pF
VGS (volts)
C (picofarads)
75
CISS
50
25
40V
6
4
2
COSS
CRSS
0
0
10
20
30
40
0
0.50
2020 Microchip Technology Inc.
0.80
0.95
1.10
1.25
QG (nanocoulombs)
VDS (volts)
FIGURE 2-9:
Capacitance vs.
Drain-to-Source Voltage.
50pF
0.65
FIGURE 2-12:
Characteristics.
Gate Drive Dynamic
DS20005930A-page 5
TN0104
3.0
PIN DESCRIPTION
The details on the pins of TN0104 TO-92 and SOT-89
are listed in Table 3-1 and Table 3-2, respectively.
Refer to Package Types for the location of pins.
TABLE 3-1:
TO-92 PIN FUNCTION TABLE
Pin Number
Pin Name
1
Source
Description
Source
2
Gate
Gate
3
Drain
Drain
TABLE 3-2:
SOT-89 PIN FUNCTION TABLE
Pin Number
Pin Name
Description
1
Gate
Gate
2,4
Drain
Drain
3
Source
DS20005930A-page 6
Source
2020 Microchip Technology Inc.
TN0104
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1 illustrates the switching waveforms and test
circuit for TN0104.
10V
VDD
90%
Pulse
Generator
INPUT
0V
10%
t(ON)
td(ON)
VDD
tr
td(OFF)
0V
tf
10%
90%
FIGURE 4-1:
OUTPUT
RGEN
10%
OUTPUT
TABLE 4-1:
t(OFF)
RL
INPUT
D.U.T.
90%
Switching Waveforms and Test Circuit.
PRODUCT SUMMARY
BVDSX/BVDGX
(V)
RDS(ON)
(Maximum)
(Ω)
IDSS(ON)
(Minimum)
(A)
40
1.8
2
2020 Microchip Technology Inc.
DS20005930A-page 7
TN0104
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
3-lead TO-92
XXXXXX
XX e3
YWWNNN
3-lead SOT-89
XXXXYWW
NNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005930A-page 8
Example
TN0104
N3 e3
014951
Example
TN1L012
111
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2020 Microchip Technology Inc.
TN0104
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2020 Microchip Technology Inc.
DS20005930A-page 9
TN0104
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
L
1
2
E1
3
b
b1
e
A
e1
Side View
Top View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
Dimensions
(mm)
A
b
b1
C
D
D1
E
E1
MIN
1.40
0.44
0.36
0.35
4.40
1.62
2.29
2.00†
NOM
-
-
-
-
-
-
-
-
MAX
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
e
e1
1.50
BSC
3.00
BSC
H
L
3.94
0.73†
-
-
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
DS20005930A-page 10
2020 Microchip Technology Inc.
TN0104
APPENDIX A:
REVISION HISTORY
Revision A (June 2020)
• Converted Supertex Doc# DSFP-TN0104 to
Microchip DS20005930A
• Changed the package marking format
• Updated the packing medium of the TN0104 N3
P014 media type from 2000/Reel to 2000/AMMO
to align with actual specifications
• Made minor text changes throughout the
document
2020 Microchip Technology Inc.
DS20005930A-page 11
TN0104
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
-
Package
Options
Device
X
-
Environmental
X
Media Type
Device:
TN0104
=
N-Channel Enhancement-Mode Vertical
DMOS FET
Packages:
N3
=
3-lead TO-92
N8
=
3-lead SOT-89
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Types:
(blank)
=
1000/Bag for an N3 Package
=
2000/Reel for an N8 Package
P003
=
2000/Reel for an N3 Package
P014
=
2000/AMMO for an N3 Package
DS20005930A-page 12
Examples:
a) TN0104N3-G:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92,1000/Bag
b) TN0104N3-G-P003:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 2000/Reel
c) TN0104N3-G-P014:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 2000/AMMO
d) TN0104N8-G:
N-Channel EnhancementMode, Vertical DMOS FET,
3-lead SOT-89, 2000/Reel
2020 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
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OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
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Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT,
chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex,
flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck,
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are registered trademarks of Microchip Technology Incorporated in
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SQTP is a service mark of Microchip Technology Incorporated in
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All other trademarks mentioned herein are property of their
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© 2020, Microchip Technology Incorporated, All Rights Reserved.
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2020 Microchip Technology Inc.
ISBN: 978-1-5224-6279-8
DS20005930A-page 13
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DS20005930A-page 14
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Fax: 39-0331-466781
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Tel: 31-416-690399
Fax: 31-416-690340
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Tel: 44-118-921-5800
Fax: 44-118-921-5820
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02/28/20