TP0610T-G

TP0610T P-Channel Enhancement-Mode Vertical DMOS FET Features General Description • • • • • • • The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. High Input Impedance and High Gain Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-Drain Diode Free from Secondary Breakdown Applications • • • • • • • Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Logic-Level Interfaces (Ideal for TTL and CMOS) Solid-State Relays Battery-Operated Systems Photo-Voltaic Drives Analog Switches Power Management Telecommunication Switches Package Type 3-lead SOT-23 (TO-236AB) (Top view) DRAIN SOURCE GATE See Table 3-1 for pin information.  2019-2020 Microchip Technology Inc. DS20005701B-page 1 TP0610T 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage ....................................................................................................................................... BVDSS Drain-to-Gate Voltage .......................................................................................................................................... BVDGS Gate-to-Source Voltage.......................................................................................................................................... ±20V Operating Ambient Temperature, TA .................................................................................................... –55°C to +150°C Storage Temperature, TS...................................................................................................................... –55°C to +150°C † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero-Gate Voltage Drain Current On-State Drain Current Static Drain-to-Source On-State Resistance Change in RDS(ON) with Temperature Note 1: Sym. Min. Typ. Max. Unit Conditions BVDSS –60 — — V VGS = 0V, ID = –10 μA V VGS = VDS, ID = –1 mA VGS(th) –1 — –2.4 ΔVGS(th) — — 6.5 IGSS — — ±10 nA VGS = ± 20V, VDS = 0V — –1 μA VGS = 0V, VDS = Maximum rating — –200 μA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) — — mA VGS = –4.5V, VDS = –10V — 25 Ω VGS = –4.5V, ID = –25 mA — 10 Ω VGS = –10V, ID = –200 mA %/°C VGS = –10V, ID = –200 mA (Note 1) IDSS — ID(ON) –50 RDS(ON) ΔRDS(ON) — — — 1 mV/°C VGS = VDS, ID = –1 mA (Note 1) Specification is obtained by characterization and is not 100% tested. DS20005701B-page 2  2019-2020 Microchip Technology Inc. TP0610T AC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. Parameter Sym. Min. Typ. Max. Unit Conditions Forward Transconductance GFS 60 — — Input Capacitance CISS — — 60 pF Common Source Output Capacitance COSS — — 30 pF Reverse Transfer Capacitance CRSS — — 10 pF Turn-On Delay Time td(ON) — — 10 ns tr — — 15 ns td(OFF) — — 15 ns tf — — 20 ns VSD — — –2 V VGS = 0V, ISD = –120 mA (Note 1) trr — 400 — ns VGS = 0V, ISD = –400 mA Rise Time Turn-Off Delay Time Fall Time DIODE PARAMETER Diode Forward Voltage Drop Reverse Recovery Time Note 1: mmho VDS = –10V, ID = –100 mA VGS = 0V, VDS = –25V, f = 1 MHz VDD = –25V, ID = –180 mA, RGEN = 25Ω Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty cycle TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C JA — 203 — °C/W Conditions TEMPERATURE RANGE PACKAGE THERMAL RESISTANCE 3-lead SOT-23 THERMAL CHARACTERISTICS Package 3-lead SOT-23 Note 1: ID (Note 1) (Continuous) (mA) ID (Pulsed) (mA) Power Dissipation at TA = 25°C (W) IDR (Note 1) (mA) IDRM (mA) –120 –400 0.36 –120 –400 ID (continuous) is limited by maximum TJ.  2019-2020 Microchip Technology Inc. DS20005701B-page 3 TP0610T 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. FIGURE 2-1: Output Characteristics. FIGURE 2-4: Saturation Characteristics. FIGURE 2-2: Current. Transconductance vs. Drain FIGURE 2-5: Temperature. Power Dissipation vs. FIGURE 2-3: Operating Area. Maximum Rated Safe FIGURE 2-6: Characteristics. Thermal Response DS20005701B-page 4  2019-2020 Microchip Technology Inc. TP0610T FIGURE 2-7: Temperature. BVDSS Variation with FIGURE 2-10: Current. On-Resistance vs. Drain FIGURE 2-8: Transfer Characteristics. FIGURE 2-11: Temperature. V(th) and RDS Variation with FIGURE 2-12: Characteristics. Gate Drive Dynamic FIGURE 2-9: Capacitance vs. Drain-to-source Voltage.  2019-2020 Microchip Technology Inc. DS20005701B-page 5 TP0610T 3.0 PIN DESCRIPTION Table 3-1 shows the description of pins in TP0610T SOT-23 (TO–236AB). Refer to Package Type for the location of pins. TABLE 3-1: PIN FUNCTION TABLE Pin Number Pin Name 1 Gate 2 Source 3 Drain DS20005701B-page 6 Description Gate Source Drain  2019-2020 Microchip Technology Inc. TP0610T 4.0 FUNCTIONAL DESCRIPTION Figure 4-1 illustrates the switching waveforms and test circuit for TP0610T. 0V Pulse Generator 10% INPUT RGEN 90% t(OFF) -10V t(ON) D.U.T. td(ON) tr td(OFF) tf INPUT OUTPUT 0V 90% OUTPUT 10% RL 90% 10% VDD FIGURE 4-1: TABLE 4-1: VDD Switching Waveforms and Test Circuit. PRODUCT SUMMARY BVDSS/BVDGS (V) RDS(ON) (Maximum) (Ω) VGS(th) (Maximum) (mA) –60 10 –50  2019-2020 Microchip Technology Inc. DS20005701B-page 7 TP0610T 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 3-lead SOT-23 XXXNNN Legend: XX...X Y YY WW NNN e3 * Note: DS20005701B-page 8 Example T50636 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2019-2020 Microchip Technology Inc. TP0610T 3-Lead TO-236AB (SOT-23) Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 Seating Plane L 2 e L1 b e1 View B Top View View B A A A2 Seating Plane A1 Side View View A - A A Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. Symbol Dimension (mm) A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e 0.95 BSC e1 1.90 BSC L 0.20† 0.50 0.60 L1 0.54 REF ș 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale.  2019-2020 Microchip Technology Inc. DS20005701B-page 9 TP0610T NOTES: DS20005701B-page 10  2019-2020 Microchip Technology Inc. TP0610T APPENDIX A: REVISION HISTORY Revision A (July 2019) • Converted Supertex Doc# DSFP-TP0610T to Microchip DS20005701B • Corrected the order of the diagrams in the Typical Performance Curves section • Made minor text changes throughout the document Revision B (February 2020) • Changed all Typical Performance Curves in Revision A to the curves shown in this version  2019-2020 Microchip Technology Inc. DS20005701B-page 11 TP0610T PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. XX PART NO. - Package Options Device X - Environmental X Media Type Device: TP0610T = P-Channel Enhancement-Mode Vertical DMOS FET Package: (blank) = 3-lead SOT-23 Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Type: (blank) = 3000/Reel for an SOT-23 Package DS20005701B-page 12 Example: a) TP0610T-G: P-Channel Enhancement-Mode Vertical DMOS FET, 3-lead SOT-23, 3000/Reel  2019-2020 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TempTrackr, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, FlashTec, Hyper Speed Control, HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider, Vite, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2019-2020, Microchip Technology Incorporated, All Rights Reserved. For information regarding Microchip’s Quality Management Systems, please visit www.microchip.com/quality.  2019-2020 Microchip Technology Inc. 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