UPS120E/TR7

UPS120e3 Schottky Barrier Rectifier Main product characteristics IO 1A VRRM 20V Tj(MAX) 125ºC VF(MAX) 0.415V Features and benefits • • • • Low forward voltage drop Low profile package height Efficient heat path with integral locking bottom metal tab Low thermal resistance DO-216AA package Powermite 1 (DO-216AA) Description and applications Single schottky rectifier assembled in Powermite 1® package which features a full metallic bottom that eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with very low thermal resistance junction to case (bottom). This product is suitable for use in switching and regulating power supplies and also charge pump circuits. Absolute maximum ratings(1) Symbol VRRM VRWM VR VR(RMS) dV/dt Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average rectified forward output current (TC = 135ºC) Peak repetitive forward current (100kHz square wave, TC = 135ºC) Non repetitive peak forward surge current (8.3ms single half sine wave) Voltage rate of change (at max VR) TSTG TJ IO IFRM IFSM (1) Value Unit 20 V 14 V 1.0 A 2.0 A 50 A 10000 V/µs Storage temperature -55 to +150 ºC Junction temperature -55 to +125 ºC All ratings at 25ºC unless specified otherwise Copyright © 2008 June 2008 Rev E www.Microsemi.com 1/4 UPS120e3 Schottky Barrier Rectifier Characteristics Static Electrical Characteristics Symbol Parameter Test Conditions Maximum forward voltage TJ = 85ºC Maximum instantaneous reverse current IR(2) CT (2) Junction capacitance max IF = 0.1 A IF = 1.0 A IF = 3.0 A IF = 0.1 A IF = 1.0 A IF = 3.0 A VR = 20V VR = 10V VR = 20V VR = 10V TJ = 25ºC VF(2) Typ TJ = 25ºC TJ = 85ºC VR = 5V, f = 1MHz 0.34 0.45 0.65 0.25 0.415 0.67 0.40 0.10 25 18 80 Units V mA pF Measured with a test pulse of 380µs to minimize self-heating effect Thermal Characteristics Symbol Parameter RΘJC Junction to case (bottom) RΘJA (3) Junction to ambient (3) Value Unit 15 ºC/W 240 ºC/W Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJ max = r(t)(Pf+Pr) where r(t) = thermal impedance under given conditions. Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the de-rated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJ max-r(t) Pr, Where r(t)=Rthja. For other power applications further calculations must be performed. Copyright © 2008 June 2008 Rev E www.Microsemi.com 2/4 UPS120e3 Schottky Barrier Rectifier Thermal Impedance Junction to Case (bottom) Thermal Impedance Junction to Ambient Mechanical Characteristics Physical dimensions Ref. A B C D E F G H I J Copyright © 2008 June 2008 Rev E www.Microsemi.com Dimensions Millimeters Inches Min. Max. Min. Max. 0.73 0.99 0.029 0.039 0.40 0.66 0.016 0.026 1.77 2.03 0.070 0.080 2.21 2.46 0.087 0.097 0.50 0.76 0.020 0.030 1.29 1.54 0.051 0.061 0.53 0.78 0.021 0.031 0.10 0.20 0.004 0.008 1.77 2.03 0.070 0.080 0.89 1.14 0.035 0.045 3/4 UPS120e3 Schottky Barrier Rectifier Footprint dimensions Package materials & information Case : Epoxy meets UL94V-0 Electrode finish : Matte Sn plating - fully RoHS compliant Marking code : S20 Powermite 1® footprint dimensions in mm (inches) Ordering information Product order code Marking Package Weight Base qty Delivery mode UPS120e3 / TR7 S20 Powermite 1 (DO-216AA) 0.016 g 3000 Tape and reel (7 inch) UPS120e3 / TR13 S20 Powermite 1 (DO-216AA) 0.016 g 12000 Tape and reel (13 inch) Commercial Business Unit Microsemi Corporation Microsemi Commercial Offshore de Macau Limitada Avenida Doutor Mario Soares Bank of China Building, 18/F, Unit D Macau SAR Copyright © 2008 June 2008 Rev E Please refer to www.microsemi.com for the terms and conditions of purchase www.Microsemi.com 4/4