UPS120Ee3
Low Leakage Schottky Barrier Rectifier
Main product characteristics
IO
1A
VRRM
20V
Tj(MAX)
125ºC
VF(MAX)
0.455V
IR(MAX)
10µA
Features and benefits
•
•
•
•
Low forward voltage drop
Low profile package height
Efficient heat path with integral locking bottom metal tab
Low thermal resistance DO-216AA package
Powermite 1
(DO-216AA)
Description and applications
Single schottky rectifier assembled in Powermite 1® package which features a full metallic bottom that
eliminates possibility of solder flux entrapment during assembly. The package also incorporates a unique
locking tab which acts as an efficient heat path from die to mounting plane for external heat sinking with
very low thermal resistance junction to case (bottom).
This product is suitable for use in switching and regulating power supplies and also charge pump
circuits.
Absolute maximum ratings(1)
Symbol
VRRM
VRWM
VR
VR(RMS)
dV/dt
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average rectified forward output current
(TC = 135ºC)
Peak repetitive forward current
(100kHz square wave, TC = 135ºC)
Non repetitive peak forward surge current
(8.3ms single half sine wave)
Voltage rate of change (at max VR)
TSTG
TJ
IO
IFRM
IFSM
(1)
Value
Unit
20
V
14
V
1.0
A
2.0
A
50
A
10000
V/µs
Storage temperature
-55 to +150
ºC
Junction temperature
-55 to +125
ºC
All ratings at 25ºC unless specified otherwise
Copyright © 2008
June 2008 Rev E
www.Microsemi.com
1/4
UPS120Ee3
Low Leakage Schottky Barrier Rectifier
Characteristics
Static Electrical Characteristics
Symbol
Parameter
Test Conditions
TJ = 25ºC
VF(2)
Maximum forward voltage
TJ = 100ºC
TJ = 25ºC
Maximum instantaneous
reverse current
IR(2)
TJ = 100ºC
CT
(2)
Junction capacitance
Typ
max
IF = 0.1 A
IF = 1.0 A
IF = 3.0 A
IF = 0.1 A
IF = 1.0 A
IF = 3.0 A
VR = 20V
VR = 10V
VR = 5V
VR = 20V
VR = 10V
VR = 5V
0.455
0.530
0.595
0.360
0.455
0.540
10
1.0
0.5
1600
500
300
VR = 5V, f = 1MHz
Units
V
µA
pF
Measured with a test pulse of 380µs to minimize self-heating effect
Thermal Characteristics
(3)
Symbol
Parameter
Value
Unit
RΘJC
Junction to case (bottom)
15
ºC/W
RΘJA
Junction to ambient(3)
240
ºC/W
Mounted on FR-4 PC board using 1oz copper with recommended minimum foot print
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this device under any
reverse voltage conditions. Calculations of TJ therefore must
include forward and reverse power effects. The allowable
operating TJ may be calculated from the equation:
TJ = TJ max = r(t)(Pf+Pr) where
r(t) = thermal impedance under given conditions.
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the de-rated allowable TJ due to reverse bias
under DC conditions only and is calculated as TJ = TJ max-r(t) Pr,
Where r(t)=Rthja. For other power applications further
calculations must be performed.
Copyright © 2008
June 2008 Rev E
www.Microsemi.com
2/4
UPS120Ee3
Low Leakage Schottky Barrier Rectifier
Thermal Impedance Junction to Case (bottom)
Thermal Impedance Junction to Ambient
Mechanical Characteristics
Physical dimensions
Ref.
A
B
C
D
E
F
G
H
I
J
Copyright © 2008
June 2008 Rev E
www.Microsemi.com
Dimensions
Millimeters
Inches
Min.
Max.
Min.
Max.
0.73
0.99
0.029
0.039
0.40
0.66
0.016
0.026
1.77
2.03
0.070
0.080
2.21
2.46
0.087
0.097
0.50
0.76
0.020
0.030
1.29
1.54
0.051
0.061
0.53
0.78
0.021
0.031
0.10
0.20
0.004
0.008
1.77
2.03
0.070
0.080
0.89
1.14
0.035
0.045
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UPS120Ee3
Low Leakage Schottky Barrier Rectifier
Footprint dimensions
Package materials & information
Case : Epoxy meets UL94V-0
Electrode finish : Matte Sn
plating - fully RoHS compliant
Marking code :
20E
Powermite 1® footprint dimensions in mm (inches)
Ordering information
Product order code
Marking
Package
Weight
Base qty
Delivery mode
UPS120Ee3 / TR7
20E
Powermite 1
(DO-216AA)
0.016 g
3000
Tape and reel (7 inch)
UPS120Ee3 / TR13
20E
Powermite 1
(DO-216AA)
0.016 g
12000
Tape and reel (13 inch)
Commercial Business Unit
Microsemi Corporation
Microsemi Commercial Offshore de Macau Limitada
Avenida Doutor Mario Soares
Bank of China Building, 18/F, Unit D
Macau SAR
Copyright © 2008
June 2008 Rev E
Please refer to www.microsemi.com for the terms and conditions of purchase
www.Microsemi.com
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