UPS5100E3/TR13

UPS5100E3/TR13

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    POWERMITE3

  • 描述:

    电压:100V 电流:5A

  • 详情介绍
  • 数据手册
  • 价格&库存
UPS5100E3/TR13 数据手册
UPS5100e3 5 A High Voltage Schottky Barrier Rectifier KEY FEATURES DESCRIPTION This UPS5100e3 in the Powermite3 package is a high efficiency Schottky rectifier that is also RoHS compliant offering high current/power capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, the Powermite3® package includes a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly and a unique locking tab act as an efficient heat path to the heat-sink mounting. Its innovative design makes this device ideal for use with automatic insertion equipment. ƒ Very low thermal resistance package ƒ RoHS Compliant with e3 suffix part number ƒ Guard-ring-die construction for transient protection ƒ Efficient heat path with Integral locking bottom metal tab ƒ Low forward voltage ƒ Full metallic bottom eliminates flux entrapment ƒ Compatible with automatic insertion ƒ Low profile-maximum height of 1mm IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com WWW . Microsemi .C OM ® ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V RMS Reverse Voltage VR(RMS) 70 V Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =90 ºC Storage Temperature Io 5 A IFSM 100 A TSTG -55 to +150 ºC Junction Temperature TJ -55 to +125 ºC Value Unit THERMAL CHARACTERISTICS Thermal Resistance Junction-to-Case (bottom) Junction to Ambient (1) RθJC RθJA 2.5 65 ºC/ Watt ºC/ Watt (1) When mounted on FR-4 PC board using 2 oz copper with recommended minimum foot print Powermite 3™ APPLICATIONS/BENEFITS ƒ Switching and Regulating Power Supplies. ƒ Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery ƒ Elimination of reverse-recovery oscillations to reduce need for EMI filtering ƒ Charge Pump Circuits ƒ Reduces reverse recovery loss with low IRM ƒ Small foot print 190 X 260 mils (1:1 Actual size) See mounting pad details on pg 3 MECHANICAL & PACKAGING • CASE: Void-free transfer molded thermosetting epoxy compound meeting UL94V-0 • FINISH: Annealed matte-Tin plating over copper and readily solderable per MILSTD-750 method 2026 (consult factory for Tin-Lead plating) • POLARITY: See figure (left) • MARKING: S5100• • WEIGHT: 0.072 gram (approx.) • Package dimension on last page • Tape & Reel option: 16 mm tape per Standard EIA-481-B, 5000 on 13” reel UPS5100e3 Copyright © 2007 10-15-2007 Rev C Microsemi Page 1 UPS5100e3 5 A High Voltage Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Symbol VF IF = 5 A , TL = 25 ºC IF = 5 A , TL = 125 ºC IF = 10 A , TL = 25 ºC IF = 10 A , TL = 125 ºC VBR IR = 0.2 mA Forward Voltage (Note 1) Reverse Break Down Voltage (Note 1) Min Typ. Max 0.75 0.58 0.84 0.67 0.81 0.64 0.90 0.73 100 Units V V IR VR = 100V, Tj = 25ºC VR = 100V, Tj = 125 ºC 15 10 CT VR = 4 V; f = 1 MHZ 150 Reverse Current (Note1) Capacitance Conditions 200 20 μA mA WWW . Microsemi .C OM Parameter pF Note: 1 Short duration test pulse used to minimize self – heating effect. UPS5100e3 Copyright © 2007 10-15-2007 Rev C Microsemi Page 2 UPS5100e3 5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi .C OM Notes: 1. TA = TSOLDERING POINT, RΘJS = 2.5C/W, RΘSA = 0ºC/W. 2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RΘJA in range of 20-35°C/W. 3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RΘJA in range of 65°C/W. See mounting pad below. MOUNTING PAD LAYOUT UPS5100e3 Mounting Pad Dimensions: inches [mm] Copyright © 2007 10-15-2007 Rev C Microsemi Page 3 UPS5100e3 5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi .C OM TAPE & REEL 13 INCH REEL UPS5100e3 Copyright © 2007 10-15-2007 Rev C Microsemi Page 4 UPS5100e3 5 A High Voltage Schottky Barrier Rectifier WWW . Microsemi .C OM PACKAGE DIMENSIONS UPS5100e3 Copyright © 2007 10-15-2007 Rev C Microsemi Page 5
UPS5100E3/TR13
物料型号:UPS5100e3

器件简介:这个UPS5100e3是Microsemi公司生产的高效率肖特基整流器,采用Powermite3®封装,尺寸小却提供高电流/功率能力,符合RoHS标准,适合高频SMD应用。独特的设计使其适用于自动插入设备。

引脚分配:该器件的引脚1和2必须在印刷电路板上电连接,引脚20连接至散热器底部。

参数特性: - 峰值重复反向电压:100V - 有效值反向电压:70V - 平均整流输出电流:5A - 非重复峰值正向浪涌电流:100A - 存储温度:-55至+150℃ - 结温:-55至+125℃

功能详解: - 低正向电压降 - 低热阻抗封装 - 完全金属底部消除助焊剂残留的可能性 - 集成锁底金属标签提供高效的热路径 - 消除反向恢复振荡以减少EMI滤波需求

应用信息: - 开关和调节电源 - 硅肖特基(热载流子)整流器,最小化反向电压恢复 - 电荷泵电路 - 降低反向恢复损耗,小尺寸

封装信息: - 封装材料:无空洞转移模塑热固性环氧化合物,符合UL94V-0 - 热特性:结至外壳热阻2.5℃/W,结至环境热阻65℃/W - 表面处理:退火亚光锡镀层,覆盖铜,符合MILSTD-750方法2026
UPS5100E3/TR13 价格&库存

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UPS5100E3/TR13
  •  国内价格
  • 1+7.02120

库存:5

UPS5100E3/TR13
    •  国内价格
    • 1+5.33520
    • 200+2.07360
    • 500+1.99800
    • 1000+1.96560

    库存:0

    UPS5100E3/TR13
    •  国内价格 香港价格
    • 1+6.554191+0.84864

    库存:2522

    UPS5100E3/TR13
    •  国内价格 香港价格
    • 5000+5.563915000+0.72042

    库存:2522