VP2206N2

VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description • • • • • • • The VP2206 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Free from Secondary Breakdown Low Power Drive Requirement Ease of Paralleling Low CISS and Fast Switching Speeds Excellent Thermal Stability Integral Source-to-Drain Diode High Input Impedance and High Gain Applications • • • • • • Motor Controls Converters Amplifiers Switches Power Supply Circuits Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Microchip’s vertical DMOS FETs are ideally suited for a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Types 3-lead TO-92 (Top view) 3-lead TO-39 (Top view) DRAIN GATE SOURCE SOURCE DRAIN GATE See Table 3-1 and Table 3-2 for pin information.  2021 Microchip Technology Inc. and its subsidiaries DS20006009A-page 1 VP2206 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Drain-to-Source Voltage ...................................................................................................................................... BVDSS Drain-to-Gate Voltage ......................................................................................................................................... BVDGS Gate-to-Source Voltage ......................................................................................................................................... ±20V Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C Storage Temperature, TS ..................................................................................................................... –55°C to +150°C † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle Parameter Sym. Min. Typ. Max. Unit Drain-to-Source Breakdown Voltage BVDSS –60 — — V VGS = 0V, ID = –10 mA Gate Threshold Voltage VGS(th) –1 — –3.5 V VGS = VDS, ID = –10 mA Change in VGS(th) with Temperature Gate Body Leakage Current Zero-Gate Voltage Drain Current On-State Drain Current Static Drain-to-Source On-State Resistance Change in RDS(ON) with Temperature Note 1: Conditions V = VDS, ID = –10 mA mV/°C GS (Note 1) ΔVGS(th) — –4.3 –5.5 IGSS — –1 –100 nA VGS = ±20V, VDS = 0V — — –50 µA VGS = 0V, VDS = Maximum rating — — –10 mA VDS = 0.8 Maximum rating, VGS = 0V, TA = 125°C (Note 1) –0.85 –2 — A IDSS ID(ON) RDS(ON) ΔRDS(ON) VGS = –5V, VDS = –25V –4 –9 — A VGS = –10V, VDS = –25V — 1.3 1.5 Ω VGS = –5V, ID = –1A — 0.75 0.9 Ω VGS = –10V, ID = –3.5A — 0.85 1.2 %/°C VGS = –10V, ID = –3.5A (Note 1) Specification is obtained by characterization and is not 100% tested. DS20006009A-page 2  2021 Microchip Technology Inc. and its subsidiaries VP2206 AC ELECTRICAL CHARACTERISTICS Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested. Parameter Sym. Min. Typ. Max. Forward Transconductance GFS 800 1400 — Input Capacitance CISS — 325 450 pF Common-Source Output Capacitance COSS — 125 180 pF Reverse Transfer Capacitance CRSS — 30 40 pF Turn-On Delay Time td(ON) — 4 15 ns tr — 16 25 ns td(OFF) — 16 50 ns tf — 22 50 ns VSD — –1.1 –1.6 V VGS = 0V, ISD = –3.5A (Note 1) trr — 500 — ns VGS = 0V, ISD = –1A Rise Time Turn-Off Delay Time Fall Time DIODE PARAMETER Diode Forward Voltage Drop Reverse Recovery Time Note 1: Unit Conditions mmho VDS = –25V, ID = –2A VGS = 0V, VDS = –25V, f = 1 MHz VDD = –25V, ID = –4A, RGEN = 10Ω Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty cycle TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C JA — 132 — °C/W Conditions TEMPERATURE RANGE PACKAGE THERMAL RESISTANCE 3-lead TO-92 THERMAL CHARACTERISTICS ID (Note 1) (Continuous) (mA) ID (Pulsed) (A) 3-lead TO-39 –750 –8 0.36 –750 –8 3-lead TO-92 –640 –4 0.74 –640 –4 Package Note 1: Power Dissipation IDR (Note 1) at TA = 25°C (mA) (W) IDRM (A) ID (continuous) is limited by maximum rated TJ.  2021 Microchip Technology Inc. and its subsidiaries DS20006009A-page 3 VP2206 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. -10 -10 VGS = -10V VGS = -10V -8.0 ID (amperes) ID (amperes) -8.0 -8V -6.0 -4.0 -6V -8V -6.0 -4.0 -6V -2.0 -2.0 -4V -4V -3V -3V 0 0 -10 -20 -30 -40 0 0 -50 -2.0 -4.0 FIGURE 2-1: -6.0 -8.0 -10 VDS (volts) VDS (volts) Output Characteristics. FIGURE 2-4: 2.0 Saturation Characteristics. 10 VDS = -25V TA = -55OC 8.0 TA = 125OC TO-39 PD (watts) GFS (siemens) TA = 25OC 1.0 6.0 4.0 2.0 TO-92 0 0 -5.0 0 -10 0 25 50 ID (amperes) FIGURE 2-2: Current. 75 100 125 150 TC (OC) Transconductance vs. Drain FIGURE 2-5: Temperature. -10 Power Dissipation vs. Case 10 Thermal Resistance (normalized) TO-39 (pulsed) TO-92 (pulsed) TO-39 (DC) ID (amperes) -1.0 TO-92 (DC) -0.1 8.0 6.0 TO-39 PD = 6.0W TC = 25OC 4.0 TO-92 PD = 1.0W TC = 25OC 2.0 TC = 25OC -0.01 -1.0 -10 -100 -1000 0 0.001 FIGURE 2-3: Operating Area. DS20006009A-page 4 Maximum Rated Safe 0.01 0.1 1.0 10 tP (seconds) VDS (volts) FIGURE 2-6: Characteristics. Thermal Response  2021 Microchip Technology Inc. and its subsidiaries VP2206 5.0 1.1 VGS = -5.0V RDS(ON) (ohms) BVDSS (normalized) 4.0 1.0 3.0 2.0 VGS = -10V 1.0 0 50 100 0 150 0 -2.0 O Tj ( C) FIGURE 2-7: Temperature. -4.0 -6.0 -8.0 BVDSS Variation with FIGURE 2-10: Current. -10 On-Resistance vs. Drain 2.0 1.2 VDS = -25V RDS(ON) @ -10V, -3.5A TA = -55OC -4.0 VGS(th) (normalized) ID (amperes) -8.0 -6.0 25OC 125OC 1.1 1.6 1.0 1.2 0.9 0.8 V(th) @ -1.0mA 0.8 -2.0 0 0 -2.0 -4.0 -6.0 -8.0 -10 0.4 0.7 -50 0 50 0 150 100 O VGS (volts) FIGURE 2-8: -10 ID (amperes) RDS(ON) (normalized) 0.9 -50 Tj ( C) Transfer Characteristics. FIGURE 2-11: Temperature. V(th) and RDS Variation with -10 400 f = 1.0MHz CISS -8.0 VGS (volts) C (picofarads) 300 200 VDS = -10V VDS = -40V -6.0 725 pF -4.0 COSS 100 -2.0 310 pF CRSS 0 0 -10 -20 -30 -40 0 0 VDS (volts) FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage.  2021 Microchip Technology Inc. and its subsidiaries 2.0 4.0 6.0 8.0 10 QG (nanocoulombs) FIGURE 2-12: Characteristics. Gate Drive Dynamic DS20006009A-page 5 VP2206 3.0 PIN DESCRIPTION The details on the pins of VP2206 3-lead TO-39 and 3-lead TO-92 are listed in Table 3-1 and Table 3-2, respectively. Refer to Package Types for the location of pins. TABLE 3-1: 3-LEAD TO-39 PIN FUNCTION TABLE Pin Number Pin Name 1 Source Description Source 2 Gate Gate 3 Drain Drain TABLE 3-2: 3-LEAD TO-92 PIN FUNCTION TABLE Pin Number Pin Name 1 Source 2 Gate Gate 3 Drain Drain DS20006009A-page 6 Description Source  2021 Microchip Technology Inc. and its subsidiaries VP2206 4.0 FUNCTIONAL DESCRIPTION Figure 4-1 illustrates the switching waveforms and test circuit for VP2206. 0V Pulse Generator 10% INPUT t(ON) td(ON) RGEN 90% t(OFF) -10V tr td(OFF) D.U.T. tf INPUT OUTPUT 0V 90% OUTPUT 10% RL 90% 10% VDD FIGURE 4-1: TABLE 4-1: VDD Switching Waveforms and Test Circuit. PRODUCT SUMMARY BVDSS/BVDGS (V) RDS(ON) (Maximum) (Ω) ID(ON) (Minimum) (A) –60 0.9 –4  2021 Microchip Technology Inc. and its subsidiaries DS20006009A-page 7 VP2206 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 3-Lead TO-39 Example XXXXXX YYWW NNN e4 VP2206 2138 123 e4 3-lead TO-92 XXXXXX XX e3 YWWNNN Legend: XX...X Y YY WW NNN e3 * Note: DS20006009A-page 8 Example VP2206 N3 e3 115310 Product Code or Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or customer-specific information. Package may or not include the corporate logo.  2021 Microchip Technology Inc. and its subsidiaries VP2206 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.  2021 Microchip Technology Inc. and its subsidiaries DS20006009A-page 9 VP2206 Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. DS20006009A-page 10  2021 Microchip Technology Inc. and its subsidiaries VP2206 APPENDIX A: REVISION HISTORY Revision A (December 2021) • Converted Supertex Doc# DSFP-VP2206 to Microchip DS20006009A • Changed the package marking format • Removed the 3-lead TO-92 N3 P002, P003, P005, and P014 media types to align packaging specifications with the actual BQM • Added some sections to comply with the standard Microchip format • Made minor text changes throughout the document  2021 Microchip Technology Inc. and its subsidiaries DS20006009A-page 11 VP2206 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. XX PART NO. - Package Options Device X - Environmental X Media Type Device: VP2206 = P-Channel Enhancement-Mode Vertical DMOS FET Packages: N2 = 3-lead TO-39 N3 = 3-lead TO-92 Environmental: G = Lead (Pb)-free/RoHS-compliant Package Media Types: (blank) = 500/Bag for an N2 Package (blank) = 1000/Bag for an N3 Package P013 = 2000/Reel for an N3 Package DS20006009A-page 12 Examples: a) VP2206N2-G: P-Channel EnhancementMode, Vertical DMOS FET, 3-lead TO-39, 500/Bag b) VP2206N3-G: P-Channel EnhancementMode, Vertical DMOS FET, 3-lead TO-92, 1000/Bag c) VP2206N3-G-P013: P-Channel EnhancementMode, Vertical DMOS FET, 3-lead TO-92, 2000/Reel  2021 Microchip Technology Inc. and its subsidiaries Note the following details of the code protection feature on Microchip products: • Microchip products meet the specifications contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and under normal conditions. • Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to continuously improving the code protection features of our products. This publication and the information herein may be used only with Microchip products, including to design, test, and integrate Microchip products with your application. Use of this information in any other manner violates these terms. Information regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. 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Trademarks The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud, CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO, JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 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Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, Espresso T1S, EtherGREEN, GridTime, IdealBridge, In-Circuit Serial Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView, memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP, SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI, SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY, ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. The Adaptec logo, Frequency on Demand, Silicon Storage Technology, Symmcom, and Trusted Time are registered trademarks of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2021, Microchip Technology Incorporated and its subsidiaries. All Rights Reserved. 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