VP2206
P-Channel Enhancement-Mode Vertical DMOS FET
Features
General Description
•
•
•
•
•
•
•
The VP2206 Enhancement-mode (normally-off)
transistor uses a vertical DMOS structure and a
well-proven silicon-gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Low CISS and Fast Switching Speeds
Excellent Thermal Stability
Integral Source-to-Drain Diode
High Input Impedance and High Gain
Applications
•
•
•
•
•
•
Motor Controls
Converters
Amplifiers
Switches
Power Supply Circuits
Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Microchip’s vertical DMOS FETs are ideally suited for a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
Package Types
3-lead TO-92
(Top view)
3-lead TO-39
(Top view)
DRAIN
GATE
SOURCE
SOURCE
DRAIN
GATE
See Table 3-1 and Table 3-2 for pin information.
2021 Microchip Technology Inc. and its subsidiaries
DS20006009A-page 1
VP2206
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ...................................................................................................................................... BVDSS
Drain-to-Gate Voltage ......................................................................................................................................... BVDGS
Gate-to-Source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, TA ................................................................................................... –55°C to +150°C
Storage Temperature, TS ..................................................................................................................... –55°C to +150°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter
Sym.
Min.
Typ.
Max.
Unit
Drain-to-Source Breakdown Voltage
BVDSS
–60
—
—
V
VGS = 0V, ID = –10 mA
Gate Threshold Voltage
VGS(th)
–1
—
–3.5
V
VGS = VDS, ID = –10 mA
Change in VGS(th) with Temperature
Gate Body Leakage Current
Zero-Gate Voltage Drain Current
On-State Drain Current
Static Drain-to-Source On-State Resistance
Change in RDS(ON) with Temperature
Note 1:
Conditions
V = VDS, ID = –10 mA
mV/°C GS
(Note 1)
ΔVGS(th)
—
–4.3
–5.5
IGSS
—
–1
–100
nA
VGS = ±20V, VDS = 0V
—
—
–50
µA
VGS = 0V,
VDS = Maximum rating
—
—
–10
mA
VDS = 0.8 Maximum rating,
VGS = 0V, TA = 125°C
(Note 1)
–0.85
–2
—
A
IDSS
ID(ON)
RDS(ON)
ΔRDS(ON)
VGS = –5V, VDS = –25V
–4
–9
—
A
VGS = –10V, VDS = –25V
—
1.3
1.5
Ω
VGS = –5V, ID = –1A
—
0.75
0.9
Ω
VGS = –10V, ID = –3.5A
—
0.85
1.2
%/°C
VGS = –10V, ID = –3.5A
(Note 1)
Specification is obtained by characterization and is not 100% tested.
DS20006009A-page 2
2021 Microchip Technology Inc. and its subsidiaries
VP2206
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All AC parameters are not 100% sample tested.
Parameter
Sym.
Min.
Typ.
Max.
Forward Transconductance
GFS
800
1400
—
Input Capacitance
CISS
—
325
450
pF
Common-Source Output Capacitance
COSS
—
125
180
pF
Reverse Transfer Capacitance
CRSS
—
30
40
pF
Turn-On Delay Time
td(ON)
—
4
15
ns
tr
—
16
25
ns
td(OFF)
—
16
50
ns
tf
—
22
50
ns
VSD
—
–1.1
–1.6
V
VGS = 0V, ISD = –3.5A (Note 1)
trr
—
500
—
ns
VGS = 0V, ISD = –1A
Rise Time
Turn-Off Delay Time
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
Note 1:
Unit
Conditions
mmho VDS = –25V, ID = –2A
VGS = 0V,
VDS = –25V,
f = 1 MHz
VDD = –25V,
ID = –4A,
RGEN = 10Ω
Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty
cycle
TEMPERATURE SPECIFICATIONS
Parameter
Sym.
Min.
Typ. Max.
Unit
Operating Ambient Temperature
TA
–55
—
+150
°C
Storage Temperature
TS
–55
—
+150
°C
JA
—
132
—
°C/W
Conditions
TEMPERATURE RANGE
PACKAGE THERMAL RESISTANCE
3-lead TO-92
THERMAL CHARACTERISTICS
ID (Note 1)
(Continuous)
(mA)
ID
(Pulsed)
(A)
3-lead TO-39
–750
–8
0.36
–750
–8
3-lead TO-92
–640
–4
0.74
–640
–4
Package
Note 1:
Power Dissipation
IDR (Note 1)
at TA = 25°C
(mA)
(W)
IDRM
(A)
ID (continuous) is limited by maximum rated TJ.
2021 Microchip Technology Inc. and its subsidiaries
DS20006009A-page 3
VP2206
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
-10
-10
VGS = -10V
VGS = -10V
-8.0
ID (amperes)
ID (amperes)
-8.0
-8V
-6.0
-4.0
-6V
-8V
-6.0
-4.0
-6V
-2.0
-2.0
-4V
-4V
-3V
-3V
0
0
-10
-20
-30
-40
0
0
-50
-2.0
-4.0
FIGURE 2-1:
-6.0
-8.0
-10
VDS (volts)
VDS (volts)
Output Characteristics.
FIGURE 2-4:
2.0
Saturation Characteristics.
10
VDS = -25V
TA = -55OC
8.0
TA = 125OC
TO-39
PD (watts)
GFS (siemens)
TA = 25OC
1.0
6.0
4.0
2.0
TO-92
0
0
-5.0
0
-10
0
25
50
ID (amperes)
FIGURE 2-2:
Current.
75
100
125
150
TC (OC)
Transconductance vs. Drain
FIGURE 2-5:
Temperature.
-10
Power Dissipation vs. Case
10
Thermal Resistance (normalized)
TO-39 (pulsed)
TO-92 (pulsed)
TO-39 (DC)
ID (amperes)
-1.0
TO-92 (DC)
-0.1
8.0
6.0
TO-39
PD = 6.0W
TC = 25OC
4.0
TO-92
PD = 1.0W
TC = 25OC
2.0
TC = 25OC
-0.01
-1.0
-10
-100
-1000
0
0.001
FIGURE 2-3:
Operating Area.
DS20006009A-page 4
Maximum Rated Safe
0.01
0.1
1.0
10
tP (seconds)
VDS (volts)
FIGURE 2-6:
Characteristics.
Thermal Response
2021 Microchip Technology Inc. and its subsidiaries
VP2206
5.0
1.1
VGS = -5.0V
RDS(ON) (ohms)
BVDSS (normalized)
4.0
1.0
3.0
2.0
VGS = -10V
1.0
0
50
100
0
150
0
-2.0
O
Tj ( C)
FIGURE 2-7:
Temperature.
-4.0
-6.0
-8.0
BVDSS Variation with
FIGURE 2-10:
Current.
-10
On-Resistance vs. Drain
2.0
1.2
VDS = -25V
RDS(ON) @ -10V, -3.5A
TA = -55OC
-4.0
VGS(th) (normalized)
ID (amperes)
-8.0
-6.0
25OC
125OC
1.1
1.6
1.0
1.2
0.9
0.8
V(th) @ -1.0mA
0.8
-2.0
0
0
-2.0
-4.0
-6.0
-8.0
-10
0.4
0.7
-50
0
50
0
150
100
O
VGS (volts)
FIGURE 2-8:
-10
ID (amperes)
RDS(ON) (normalized)
0.9
-50
Tj ( C)
Transfer Characteristics.
FIGURE 2-11:
Temperature.
V(th) and RDS Variation with
-10
400
f = 1.0MHz
CISS
-8.0
VGS (volts)
C (picofarads)
300
200
VDS = -10V
VDS = -40V
-6.0
725 pF
-4.0
COSS
100
-2.0
310 pF
CRSS
0
0
-10
-20
-30
-40
0
0
VDS (volts)
FIGURE 2-9:
Capacitance vs.
Drain-to-Source Voltage.
2021 Microchip Technology Inc. and its subsidiaries
2.0
4.0
6.0
8.0
10
QG (nanocoulombs)
FIGURE 2-12:
Characteristics.
Gate Drive Dynamic
DS20006009A-page 5
VP2206
3.0
PIN DESCRIPTION
The details on the pins of VP2206 3-lead TO-39 and
3-lead TO-92 are listed in Table 3-1 and Table 3-2,
respectively. Refer to Package Types for the location
of pins.
TABLE 3-1:
3-LEAD TO-39 PIN FUNCTION TABLE
Pin Number
Pin Name
1
Source
Description
Source
2
Gate
Gate
3
Drain
Drain
TABLE 3-2:
3-LEAD TO-92 PIN FUNCTION TABLE
Pin Number
Pin Name
1
Source
2
Gate
Gate
3
Drain
Drain
DS20006009A-page 6
Description
Source
2021 Microchip Technology Inc. and its subsidiaries
VP2206
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1 illustrates the switching waveforms and test
circuit for VP2206.
0V
Pulse
Generator
10%
INPUT
t(ON)
td(ON)
RGEN
90%
t(OFF)
-10V
tr
td(OFF)
D.U.T.
tf
INPUT
OUTPUT
0V
90%
OUTPUT
10%
RL
90%
10%
VDD
FIGURE 4-1:
TABLE 4-1:
VDD
Switching Waveforms and Test Circuit.
PRODUCT SUMMARY
BVDSS/BVDGS
(V)
RDS(ON)
(Maximum)
(Ω)
ID(ON)
(Minimum)
(A)
–60
0.9
–4
2021 Microchip Technology Inc. and its subsidiaries
DS20006009A-page 7
VP2206
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
3-Lead TO-39
Example
XXXXXX
YYWW
NNN e4
VP2206
2138
123 e4
3-lead TO-92
XXXXXX
XX e3
YWWNNN
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20006009A-page 8
Example
VP2206
N3 e3
115310
Product Code or Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
2021 Microchip Technology Inc. and its subsidiaries
VP2206
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2021 Microchip Technology Inc. and its subsidiaries
DS20006009A-page 9
VP2206
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
DS20006009A-page 10
2021 Microchip Technology Inc. and its subsidiaries
VP2206
APPENDIX A:
REVISION HISTORY
Revision A (December 2021)
• Converted Supertex Doc# DSFP-VP2206 to
Microchip DS20006009A
• Changed the package marking format
• Removed the 3-lead TO-92 N3 P002, P003,
P005, and P014 media types to align packaging
specifications with the actual BQM
• Added some sections to comply with the standard
Microchip format
• Made minor text changes throughout the
document
2021 Microchip Technology Inc. and its subsidiaries
DS20006009A-page 11
VP2206
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
XX
PART NO.
-
Package
Options
Device
X
-
Environmental
X
Media Type
Device:
VP2206
=
P-Channel Enhancement-Mode Vertical
DMOS FET
Packages:
N2
=
3-lead TO-39
N3
=
3-lead TO-92
Environmental:
G
=
Lead (Pb)-free/RoHS-compliant Package
Media Types:
(blank)
=
500/Bag for an N2 Package
(blank)
=
1000/Bag for an N3 Package
P013
=
2000/Reel for an N3 Package
DS20006009A-page 12
Examples:
a) VP2206N2-G:
P-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-39, 500/Bag
b) VP2206N3-G:
P-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 1000/Bag
c) VP2206N3-G-P013:
P-Channel EnhancementMode, Vertical DMOS FET,
3-lead TO-92, 2000/Reel
2021 Microchip Technology Inc. and its subsidiaries
Note the following details of the code protection feature on Microchip products:
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and
under normal conditions.
•
Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of
Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to
continuously improving the code protection features of our products.
This publication and the information herein may be used only
with Microchip products, including to design, test, and integrate
Microchip products with your application. Use of this information in any other manner violates these terms. Information
regarding device applications is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your
specifications. Contact your local Microchip sales office for
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ISBN: 978-1-5224-9518-5
DS20006009A-page 13
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DS20006009A-page 14
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Tel: 48-22-3325737
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Gothenberg
Tel: 46-31-704-60-40
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
2021 Microchip Technology Inc. and its subsidiaries
09/14/21