VRF148A

VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. FEATURES • Improved Ruggedness V(BR)DSS = 170 V • 30:1 Load VSWR Capability at Specified Operating Conditions • 30W with 20dB Typical Gain @ 30MHz, 50V • Nitride Passivated • 30W with 16dB Typical Gain @ 175MHz, 50V • Refractory Gold Metallization • Excellent Stability & Low IMD • High Voltage Replacement for MRF148A • Common Source Configuration • RoHS Compliant • Available in Matched Pairs Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage Unit 170 V 6 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 115 W TSTG TJ Continuous Drain Current @ TC = 25°C VRF148A(MP) Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 1mA) 170 VDS(ON) On State Drain Voltage (ID(ON) = 2.5A, VGS = 10V) Typ Max 3.0 5.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 0.1 mA IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 1.0 μA gfs Forward Transconductance (VDS = 10V, ID = 2.5A) 0.8 Gate Threshold Voltage (VDS = 10V, ID = 10mA) 2.9 3.6 4.4 V Min Typ Max Unit 1.52 °C/W VGS(TH) mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4943 Rev C 9-2010 Thermal Characteristics Dynamic Characteristics Symbol VRF148A(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 160 Coss Output Capacitance VDS = 50V 40 Crss Reverse Transfer Capacitance f = 1MHz 2.6 Max Unit pF Functional Characteristics Symbol Parameter Min Typ GPS f1 = 30MHz, VDD = 50V, IDQ = 100mA, Pout = 30W 18 GPS f1 = 175MHz, VDD = 50V, IDQ = 100mA, Pout = 30W 16 η f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, 30 WPEP 40 η f1 = 30MHz, VDD = 50V, IDQ = 100mA, 30 WCW 50 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, Pout = 30WPEP 1 -35 IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 100mA, Pout = 30WPEP -60 ψ f1= 30MHz, f2 = 30.001MHz ,VDD = 50V, IDQ = 100mA, Pout = 300WPEP 30:1 VSWR - All Phase Angles Max Unit dB % -28 dB No Degradation in Output Power Class A Characteristics Symbol Test Conditions Min Typ GPS f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP 20 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP -50 IMD(d9-d13) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 1.0A, Pout = 10WPEP -70 Max dB 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 60 20 16 10V 40 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 9V 30 8V 7V 20 6V 10 5V TJ= -55°C 14 TJ= 25°C 12 5 10 15 20 V , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 0 10 8 6 4 0 25 0 Ciss Pdmax ID, DRAIN CURRENT (V) IDMax Coss C, CAPACITANCE (pF) 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 10 100 050-4943 Rev C 9-2010 TJ= 125°C 2 4V 0 250μs PULSE TEST