VRF151

VRF151 VRF151MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. M174 FEATURES • Improved Ruggedness V(BR)DSS = 170V • 30:1 Load VSWR Capability at Specified Operating Conditions • 150W with 22dB Typical Gain @ 30MHz, 50V • Nitride Passivated • 150W with 14dB Typical Gain @ 175MHz, 50V • Refractory Gold Metallization • Excellent Stability & Low IMD • High Voltage Replacement for MRF151 • Common Source Configuration • RoHS Compliant • Available in Matched Pairs Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF151(MP) Unit 170 V Continuous Drain Current @ TC = 25°C 16 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 300 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.0 Max 3.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 5A) 5.0 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.60 °C/W 1 mA 1.0 μA mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4937 Rev F 9-2010 Thermal Characteristics Dynamic Characteristics Symbol VRF151(MP) Parameter Test Conditions CISS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min Typ VGS = 0V 375 VDS = 150V 200 f = 1MHz 12 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP GPS f = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 150W ηD f 1= 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP Min Typ 18 22 Max dB 14 50 IMD(d3) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP IMD(d11) f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP ψ f1 = 30MHz, f2 = 30.001MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 30:1 VSWR - All Phase Angles % -30 1 Unit dBc -60 No Degradation in Output Power Class A Characteristics Symbol Test Conditions GPS IMD(d3) IMD(d9-d13) Min Typ f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP 20 f = 30MHz, VDD = 50V, IDQ(Max) = 3.75A, Pout = 150WPEP -50 f = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 150WPEP -75 Max dB 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 25 30 14V 10V 250μs PULSE TEST