VRF151G

VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. FEATURES • Improved Ruggedness V(BR)DSS = 170V • 5:1 Load VSWR Capability at Specified Operating Conditions • 300W with 16dB Typical Gain @ 175MHz, 50V • Nitride Passivated • Excellent Stability & Low IMD • Refractory Gold Metallization • Common Source Configuration • High Voltage Replacement for MRF151G • RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C unless otherwise specified Parameter Drain-Source Voltage VRF151G Unit 170 V Continuous Drain Current @ TC = 25°C 36 A VGS Gate-Source Voltage ±40 V PD Total Device dissipation @ TC = 25°C 500 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature °C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 10A, VGS = 10V) 2.0 Max 3.0 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) gfs Forward Transconductance (VDS = 10V, ID = 10A) 5.0 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.35 °C/W 1.0 1.0 mA μA mhos Symbol RθJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4938 Rev G 11-2009 Thermal Characteristics Dynamic Characteristics Symbol VRF151G Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 375 Coss Output Capacitance VDS = 50V 200 Crss Reverse Transfer Capacitance f = 1MHz 12 Max Unit pF Functional Characteristics Symbol Min Typ GPS f = 175MHz,- VDD = 50V, IDQ = 500mA, Pout = 300W Parameter 14 16 Max dB ηD f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 50 55 % ψ f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 5:1VSWR - All Phase Angles No Degradation in Output Power 1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 30 25 ID, DRAIN CURRENT (A) 20 TJ= -55°C 7V 15 6V 10 5V 5 250μs PULSE TEST