RF5110G
®
3V General Purpose/GSM Power Amplifier
Product Overview
The RF5110G is a high-power, high-gain, high-efficiency
power amplifier. The device is manufactured with an
advanced GaAs HBT process. It is designed for use as the
final RF amplifier in GSM hand-held equipment in 900 MHz
band, and General-Purpose radio application in standard
sub-bands from 150 MHz to 960 MHz. An analog on-board
power controller provides over 70 dB range of adjustment.
Which allows for power down with a voltage equals to the
logic “Low” to set the device in standby mode. The
RF5110G RF Input is internally matched to 50 Ω. On its RF
Output, it can be easily matched externally to obtain
optimum power and efficiency for certain applications.
16 Pad 3 x 3 mm QFN Package
Key Features
General Purpose:
• Single 2.8 V to 3.6 V Supply
• +32 dBm Output Power
• 53% Efficiency
• 150 MHz to 960 MHz Operation
GSM:
• Single 2.7 V to 4.8 V Supply
• +36 dBm Output Power at 3.6 V
• 32 dB Gain with Analog Gain Control
• 57% Efficiency
• 800 MHz to 950 MHz Operation
• Supports GSM and E-GSM
Functional Block Diagram
Applications
• FM Radio Applications
150 MHz/220 MHz/450 MHz
865 MHz to 928 MHz
• 3 V GSM Cellular Handsets
• GPRS Compatible
Ordering Information
Top View
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
Part No.
Description
RF5110GTR7
2,500 pieces on a 7” reel (standard)
RF5110GPCK-410
Fully Tested Evaluation Board
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Storage Temperature
−55 to +150 °C
Device Voltage (VCC, VCC1, VCC2)
-0.5 V to +6.0 V
Control Voltage (VAPC1, VAPC2)
-0.5 V to +3.0 V
Device Current (ICC, ICC1, ICC2)
RF Input Power
Duty Cycle at Max Power
Parameter
Min
Typ
Max
Units
+4.8(1)
V
+3.5
Device Voltage
(VCC, VCC1, VCC2)
+2.7
2400 mA
TCASE
−40
+13 dBm
Note:
1. POUT < +35 dBm
2. With maximum output load VSWR 6:1
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
50%
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability. This rating specified for GSM operation.
+5.5(1)(2)
V
+85
°C
Electrical Specifications
Parameter
Conditions (1)
Min
Output Power
Gain
150 MHz
Typ
Max
Units
32
dBm
31.5
dB
Efficiency
53
%
Output Power
32
dBm
32
dB
52
%
32
dBm
32.5
dB
Gain
220 MHz
Efficiency
Output Power
Gain
450 MHz; VCC, VCC1 and VCC2 = 3.0 V
Efficiency
Output Power
Gain
Efficiency
865 MHz to 928 MHz
Equals typical at respective frequency corner
50.5
%
32
dBm
33.0
29.5
49
dB
%
Notes:
1. Test conditions unless otherwise noted: VAPC1 and VAPC2 = 2.8 V; VCC, VCC1 and VCC2 = 3.3 V; Duty Cycle = 100%; Temp = +25 °C; 50 Ω system.
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Electrical Specifications (continue)
Parameter
Conditions (1)
Min
Operational Frequency Range
Usable Frequency Range
Maximum Output Power
Using different EVB tune
800
33.8
Temp = +60 °C, VCC, VCC1 and VCC2 = 3.3 V
At Maximum Output Power
Efficiency
Typ
880
Max
Units
915
MHz
950
MHz
34.5
dBm
33.1
50
POUT = +20 dBm
POUT = +10 dBm
dBm
57
%
12
%
5
Input Power for Max. Output
7.0
%
9.5
dBm
RBW = 100 KHz; 925-935 MHz;
VCC, VCC1 and VCC2 = 3.3 to 5.0V
-72
dBm
RBW =100 KHz; 935-960 MHz;
VCC, VCC1 and VCC2 = 3.3 to 5.0V
-81
dBm
Forward Isolation
Standby Mode VAPC1 and VAPC2 = 0.3 V,
PIN = +9.5 dBm
-22
dBm
Second Harmonic
PIN = +9.5 dBm
-20
-7
dBm
Third Harmonic
PIN = +9.5 dBm
-25
-7
dBm
-36
dBm
Output Noise Power
4.5
Non-Harmonic Spurious
Input Impedance
Optimum Source Impedance
Input VSWR
For best noise performance
2.5:1
POUT < (POUT.MAX - 5 dB)
4.0:1
Spurious < -36dBm, RBW=100KHz
VAPC1 and VAPC2 from 0.3 V to 2.6 V
8:1
Output Load VSWR,
Ruggedness
No damage
10:1
2.6 – j15
Output Load Impedance
Load Impedance presented at RF OUT pad
Power Control “ON” Voltage
VAPC1, VAPC2; Maximum POUT
2.6
Power Control “OFF” Voltage
VAPC1, VAPC2; Minimum POUT
0.2
Gain Control Range
VAPC1 and VAPC2 from 0.2 V to 2.6 V
75
Gain Control Slope
POUT from -10 dBm to +35 dBm
5
APC Input Capacitance
DC to 2 MHz
Turn ON/OFF Time
VAPC1 and VAPC2 = 2.8V
Thermal Resistance
Ω
V
0.5
V
dB
100
4.5
150
dB/V
10
pF
5
mA
25
µA
100
ns
200
335
mA
Standby Mode, PIN < -30dBm
1
10
µA
Standby Mode, PIN < -30dBm, Temp = +85°C
1
10
µA
VAPC1 and VAPC2 = 0 V
VAPC1 and VAPC2 from 0 V to 2.8V
At Maximum Output Power
Device Current
(ICC, ICC1, and ICC2)
Ω
40 + j10
(POUT, MAX - 5 dB) < Pout < POUT.MAX
Output Load VSWR,
Stability
APC Input Current
Ω
50
2
Quiescent, PIN < -30dBm
15
CW Mode, Junction to Case
25.6
A
°C/W
Notes:
1. Test conditions unless otherwise noted: VAPC1 and VAPC2 = 2.8 V; VCC, VCC1 and VCC2 = 3.6 V; PIN = +4.5 dBm; Pulse Width = 1731 µs; Duty Cycle
= 37.5%; Temp = +25 °C; 50 Ω system.
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
150 MHz FM Band Application Circuit
220 MHz FM Band Application Circuit
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
450 MHz FM Band Application Circuit
865 MHz and 902 MHz to 928 MHz ISM Band Application Circuit
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
850 MHz GSM Band Application Circuit
900 MHz GSM Band Application Circuit
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Performance Plots – 150 MHz
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Performance Plots – 220 MHz
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Performance Plots – 450 MHz
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Performance Plots – 865 MHz to 925 MHz
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Pad Configuration and Description
Top View
Pad No. Label
Description
1
VCC1
Power supply for the pre-amplifier stage and interstage matching. This pin
forms the shunt inductance needed for proper tuning of the interstage
match. Refer to the application circuit for proper configuration. Note that
position and value of the components are important.
2
GND1
Ground connection for the pre-amplifier stage. Keep traces physically short
and connect immediately to the ground plane for best performance. For
stability concert, this pin requires dedicated ground via holes to the ground
plane to minimize any common inductance.
3
RF IN
RF Input. This is a 50Ω input, but the actual impedance could be affected by
the interstage matching network connected on pin 1. An external DC
blocking capacitor is required.
4
GND2
Ground connection for the driver stage. To minimize the noise power at the
output, it is recommended to connect this pin with a trace of about 40mil
long to the ground plane. This will slightly reduce the small signal gain. For
stability concert, this pin requires dedicated ground via holes to the ground
plane to minimize any common inductance.
5, 6
VCC2
Power supply for the driver stage and interstage matching. This pin requires
a shunt inductance for proper interstage matching. Please refer to the
application schematic for proper configuration.
7, 13
NC
Not connected.
2F0
Connection for the second harmonic trap. This pin is internally connected
to the RF OUT pins. With the bonding wire together with an external
capacitor form a series resonator. It should provide a second harmonic short
termination to improve amplifier efficiency and reduce spurious outputs.
8
9, 10, 11,
RF OUT
12
Interface Circuit
RF Output and power supply for the output stage. Bias voltage for the final
stage is provided through this wide output pins. An external matching
network is required to provide the optimum performance.
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Pad Configuration and Description (continue)
Pad No. Label
Description
14
VCC
Power supply for the bias circuits.
15
APC2
Power Control for the output stage. See pin 16 for more details.
APC1
Power Control for the driver and pre-amplifier stages. When this pin is "low,"
all circuits shut off. A "low" is typically 0.5V or less at room temperature.
A shunt bypass capacitor is required. For a typical power control operation,
the VAPC1 is about 1.0V for -10dBm to 2.6V for +35dBm RF output power.
The maximum power that can be achieved depends on the actual output
matching; see the application circuit for more details.
16
Backside
GND
Paddle
Interface Circuit
RF/DC ground. Ground connection for the output stage. This pad should be
connected to the ground plane by ground via holes directly under the device.
A short path is required to obtain optimum performance, as well as to
provide a good thermal path to the PCB for maximum heat dissipation.
Evaluation Board PCB Information
Evaluation Board: Size 2.0” x 2.0”; Material FR-4; Multi-Layer; Thickness 0.032”
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Package Marking and Dimensions
Marking: Part Number – RF5110
Trace Code – Assigned by sub-contractor
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
3. Contact plating: Matte Sn
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. ground via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. 0.203 mm to 0.330
mm finished hole size and 0.5 mm to 1.2 mm grid pattern recommended.
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Tape and Reel Information – Carrier and Cover Tape Dimensions
Feature
Cavity
Centerline Distance
Symbol
Size (in)
Size (mm)
Length
Measure
A0
0.125
3.20
Width
B0
0.125
3.20
Depth
K0
0.040
1.00
Pitch
P1
0.157
4.00
Cavity to Perforation - Length Direction
P2
0.079
2.00
Cavity to Perforation - Width Direction
F
0.217
5.50
Cover Tape
Width
C
0.362
9.20
Carrier Tape
Width
W
0.472
12.0
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Tape and Reel Information – Reel Dimensions
Standard T/R size = 2,500 pieces on a 7” reel.
Feature
Flange
Hub
Measure
Symbol
Size (in)
Size (mm)
Diameter
A
6.969
177
Thickness
W2
0.717
18.2
Space Between Flange
W1
0.504
12.8
Outer Diameter
N
2.283
58.0
Arbor Hole Diameter
C
0.512
13.0
Key Slit Width
B
0.079
2.0
Key Slit Diameter
D
0.787
20.0
Tape and Reel Information – Tape Length and Label Placement
Notes:
1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A.
2. Labels are placed on the flange opposite the sprockets in the carrier tape.
Datasheet, Rev. D, September 9, 2019 | Subject to change without notice
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RF5110G
3 V General Purpose/GSM Power Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
Class 0
JESD22-A114
ESD – Machine Model
Class A
JESD22-A115
MSL – Moisture Sensitivity Level
Level 2
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Matte Sn
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
•
•
•
•
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
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