RF5110GTR7

RF5110G ® 3V General Purpose/GSM Power Amplifier Product Overview The RF5110G is a high-power, high-gain, high-efficiency power amplifier. The device is manufactured with an advanced GaAs HBT process. It is designed for use as the final RF amplifier in GSM hand-held equipment in 900 MHz band, and General-Purpose radio application in standard sub-bands from 150 MHz to 960 MHz. An analog on-board power controller provides over 70 dB range of adjustment. Which allows for power down with a voltage equals to the logic “Low” to set the device in standby mode. The RF5110G RF Input is internally matched to 50 Ω. On its RF Output, it can be easily matched externally to obtain optimum power and efficiency for certain applications. 16 Pad 3 x 3 mm QFN Package Key Features General Purpose: • Single 2.8 V to 3.6 V Supply • +32 dBm Output Power • 53% Efficiency • 150 MHz to 960 MHz Operation GSM: • Single 2.7 V to 4.8 V Supply • +36 dBm Output Power at 3.6 V • 32 dB Gain with Analog Gain Control • 57% Efficiency • 800 MHz to 950 MHz Operation • Supports GSM and E-GSM Functional Block Diagram Applications • FM Radio Applications 150 MHz/220 MHz/450 MHz 865 MHz to 928 MHz • 3 V GSM Cellular Handsets • GPRS Compatible Ordering Information Top View Datasheet, Rev. D, September 9, 2019 | Subject to change without notice Part No. Description RF5110GTR7 2,500 pieces on a 7” reel (standard) RF5110GPCK-410 Fully Tested Evaluation Board 1 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Storage Temperature −55 to +150 °C Device Voltage (VCC, VCC1, VCC2) -0.5 V to +6.0 V Control Voltage (VAPC1, VAPC2) -0.5 V to +3.0 V Device Current (ICC, ICC1, ICC2) RF Input Power Duty Cycle at Max Power Parameter Min Typ Max Units +4.8(1) V +3.5 Device Voltage (VCC, VCC1, VCC2) +2.7 2400 mA TCASE −40 +13 dBm Note: 1. POUT < +35 dBm 2. With maximum output load VSWR 6:1 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 50% Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. This rating specified for GSM operation. +5.5(1)(2) V +85 °C Electrical Specifications Parameter Conditions (1) Min Output Power Gain 150 MHz Typ Max Units 32 dBm 31.5 dB Efficiency 53 % Output Power 32 dBm 32 dB 52 % 32 dBm 32.5 dB Gain 220 MHz Efficiency Output Power Gain 450 MHz; VCC, VCC1 and VCC2 = 3.0 V Efficiency Output Power Gain Efficiency 865 MHz to 928 MHz Equals typical at respective frequency corner 50.5 % 32 dBm 33.0 29.5 49 dB % Notes: 1. Test conditions unless otherwise noted: VAPC1 and VAPC2 = 2.8 V; VCC, VCC1 and VCC2 = 3.3 V; Duty Cycle = 100%; Temp = +25 °C; 50 Ω system. Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 2 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Electrical Specifications (continue) Parameter Conditions (1) Min Operational Frequency Range Usable Frequency Range Maximum Output Power Using different EVB tune 800 33.8 Temp = +60 °C, VCC, VCC1 and VCC2 = 3.3 V At Maximum Output Power Efficiency Typ 880 Max Units 915 MHz 950 MHz 34.5 dBm 33.1 50 POUT = +20 dBm POUT = +10 dBm dBm 57 % 12 % 5 Input Power for Max. Output 7.0 % 9.5 dBm RBW = 100 KHz; 925-935 MHz; VCC, VCC1 and VCC2 = 3.3 to 5.0V -72 dBm RBW =100 KHz; 935-960 MHz; VCC, VCC1 and VCC2 = 3.3 to 5.0V -81 dBm Forward Isolation Standby Mode VAPC1 and VAPC2 = 0.3 V, PIN = +9.5 dBm -22 dBm Second Harmonic PIN = +9.5 dBm -20 -7 dBm Third Harmonic PIN = +9.5 dBm -25 -7 dBm -36 dBm Output Noise Power 4.5 Non-Harmonic Spurious Input Impedance Optimum Source Impedance Input VSWR For best noise performance 2.5:1 POUT < (POUT.MAX - 5 dB) 4.0:1 Spurious < -36dBm, RBW=100KHz VAPC1 and VAPC2 from 0.3 V to 2.6 V 8:1 Output Load VSWR, Ruggedness No damage 10:1 2.6 – j15 Output Load Impedance Load Impedance presented at RF OUT pad Power Control “ON” Voltage VAPC1, VAPC2; Maximum POUT 2.6 Power Control “OFF” Voltage VAPC1, VAPC2; Minimum POUT 0.2 Gain Control Range VAPC1 and VAPC2 from 0.2 V to 2.6 V 75 Gain Control Slope POUT from -10 dBm to +35 dBm 5 APC Input Capacitance DC to 2 MHz Turn ON/OFF Time VAPC1 and VAPC2 = 2.8V Thermal Resistance Ω V 0.5 V dB 100 4.5 150 dB/V 10 pF 5 mA 25 µA 100 ns 200 335 mA Standby Mode, PIN < -30dBm 1 10 µA Standby Mode, PIN < -30dBm, Temp = +85°C 1 10 µA VAPC1 and VAPC2 = 0 V VAPC1 and VAPC2 from 0 V to 2.8V At Maximum Output Power Device Current (ICC, ICC1, and ICC2) Ω 40 + j10 (POUT, MAX - 5 dB) < Pout < POUT.MAX Output Load VSWR, Stability APC Input Current Ω 50 2 Quiescent, PIN < -30dBm 15 CW Mode, Junction to Case 25.6 A °C/W Notes: 1. Test conditions unless otherwise noted: VAPC1 and VAPC2 = 2.8 V; VCC, VCC1 and VCC2 = 3.6 V; PIN = +4.5 dBm; Pulse Width = 1731 µs; Duty Cycle = 37.5%; Temp = +25 °C; 50 Ω system. Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 3 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® 150 MHz FM Band Application Circuit 220 MHz FM Band Application Circuit Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 4 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® 450 MHz FM Band Application Circuit 865 MHz and 902 MHz to 928 MHz ISM Band Application Circuit Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 5 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® 850 MHz GSM Band Application Circuit 900 MHz GSM Band Application Circuit Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 6 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Performance Plots – 150 MHz Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 7 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Performance Plots – 220 MHz Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 8 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Performance Plots – 450 MHz Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 9 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Performance Plots – 865 MHz to 925 MHz Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 10 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Pad Configuration and Description Top View Pad No. Label Description 1 VCC1 Power supply for the pre-amplifier stage and interstage matching. This pin forms the shunt inductance needed for proper tuning of the interstage match. Refer to the application circuit for proper configuration. Note that position and value of the components are important. 2 GND1 Ground connection for the pre-amplifier stage. Keep traces physically short and connect immediately to the ground plane for best performance. For stability concert, this pin requires dedicated ground via holes to the ground plane to minimize any common inductance. 3 RF IN RF Input. This is a 50Ω input, but the actual impedance could be affected by the interstage matching network connected on pin 1. An external DC blocking capacitor is required. 4 GND2 Ground connection for the driver stage. To minimize the noise power at the output, it is recommended to connect this pin with a trace of about 40mil long to the ground plane. This will slightly reduce the small signal gain. For stability concert, this pin requires dedicated ground via holes to the ground plane to minimize any common inductance. 5, 6 VCC2 Power supply for the driver stage and interstage matching. This pin requires a shunt inductance for proper interstage matching. Please refer to the application schematic for proper configuration. 7, 13 NC Not connected. 2F0 Connection for the second harmonic trap. This pin is internally connected to the RF OUT pins. With the bonding wire together with an external capacitor form a series resonator. It should provide a second harmonic short termination to improve amplifier efficiency and reduce spurious outputs. 8 9, 10, 11, RF OUT 12 Interface Circuit RF Output and power supply for the output stage. Bias voltage for the final stage is provided through this wide output pins. An external matching network is required to provide the optimum performance. Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 11 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Pad Configuration and Description (continue) Pad No. Label Description 14 VCC Power supply for the bias circuits. 15 APC2 Power Control for the output stage. See pin 16 for more details. APC1 Power Control for the driver and pre-amplifier stages. When this pin is "low," all circuits shut off. A "low" is typically 0.5V or less at room temperature. A shunt bypass capacitor is required. For a typical power control operation, the VAPC1 is about 1.0V for -10dBm to 2.6V for +35dBm RF output power. The maximum power that can be achieved depends on the actual output matching; see the application circuit for more details. 16 Backside GND Paddle Interface Circuit RF/DC ground. Ground connection for the output stage. This pad should be connected to the ground plane by ground via holes directly under the device. A short path is required to obtain optimum performance, as well as to provide a good thermal path to the PCB for maximum heat dissipation. Evaluation Board PCB Information Evaluation Board: Size 2.0” x 2.0”; Material FR-4; Multi-Layer; Thickness 0.032” Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 12 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Package Marking and Dimensions Marking: Part Number – RF5110 Trace Code – Assigned by sub-contractor Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. 3. Contact plating: Matte Sn PCB Mounting Pattern Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. ground via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. 0.203 mm to 0.330 mm finished hole size and 0.5 mm to 1.2 mm grid pattern recommended. 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 13 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Tape and Reel Information – Carrier and Cover Tape Dimensions Feature Cavity Centerline Distance Symbol Size (in) Size (mm) Length Measure A0 0.125 3.20 Width B0 0.125 3.20 Depth K0 0.040 1.00 Pitch P1 0.157 4.00 Cavity to Perforation - Length Direction P2 0.079 2.00 Cavity to Perforation - Width Direction F 0.217 5.50 Cover Tape Width C 0.362 9.20 Carrier Tape Width W 0.472 12.0 Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 14 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Tape and Reel Information – Reel Dimensions Standard T/R size = 2,500 pieces on a 7” reel. Feature Flange Hub Measure Symbol Size (in) Size (mm) Diameter A 6.969 177 Thickness W2 0.717 18.2 Space Between Flange W1 0.504 12.8 Outer Diameter N 2.283 58.0 Arbor Hole Diameter C 0.512 13.0 Key Slit Width B 0.079 2.0 Key Slit Diameter D 0.787 20.0 Tape and Reel Information – Tape Length and Label Placement Notes: 1. Empty part cavities at the trailing and leading ends are sealed with cover tape. See EIA 481-1-A. 2. Labels are placed on the flange opposite the sprockets in the carrier tape. Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 15 of 16 www.qorvo.com RF5110G 3 V General Purpose/GSM Power Amplifier ® Handling Precautions Parameter Rating Standard ESD – Human Body Model (HBM) Class 0 JESD22-A114 ESD – Machine Model Class A JESD22-A115 MSL – Moisture Sensitivity Level Level 2 IPC/JEDEC J-STD-020 Caution! ESD-Sensitive Device Solderability Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes. Solder profiles available upon request. Contact plating: Matte Sn RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • • • • Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Pb Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. 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Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Datasheet, Rev. D, September 9, 2019 | Subject to change without notice 16 of 16 www.qorvo.com