SPF5122Z

SPF5122Z SPF5122Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers. 25.0 GaAs MESFET 22.0 3.50 19.0 3.00 16.0 2.50 13.0 2.00 10.0 1.50 7.0 1.00 SiGe BiCMOS Gain (dB) Si BiCMOS SiGe HBT GaAs pHEMT 4.00 GaN HEMT 4.0 InP HBT 1.0 Gain     Si CMOS Si BJT   GaAs HBT InGaP HBT  Gain and NF versus Frequency Broadband Application Circuit (5V, 90mA) NF (dB) Optimum Technology Matching® Applied    0.50 0.00 0.0 0.5 1.0 1.5 2.0 2.5  3.0 Frequency (GHz) LDMOS Parameter Small Signal Power Gain Min. Specification Typ.  Max. Gain=18.9dB at 900MHz High Linearity: OIP3=40.5dBm at 1900MHz Channel Power=13.4dBm (65dBc IS95 ACPR, 880MHz) P1dB =23.4dBm at 1900MHz Single-Supply Operation: 5V at IDQ =90mA Flexible Biasing Options: 3-5V, Adjustable Current Broadband Internal Matching Applications NF RF MEMS Ultra-Low Noise Figure=0.60dB at 900MHz Cellular, PCS, W-CDMA, ISM, WiMAX Receivers PA Driver Amplifier Low Noise, High Linearity Gain Block Applications Unit Condition 17.2 11.2 20.8 21.4 35.1 37.2 18.9 20.2 dB 0.9GHz 12.2 14.4 dB 1.96GHz Output Power at 1dB Compression 22.8 dBm 0.9GHz 23.4 dBm 1.9GHz Output Third Order Intercept Point 38.1 dBm 0.9GHz 40.5 dBm 1.9GHz Noise Figure 0.59 0.85 dB 0.9GHz 0.65 0.9 dB 1.9GHz Input Return Loss 10 14.3 dB 0.9 GHz 21 dB 1.9GHz Output Return Loss 14 17 dB 0.9GHz 13 dB 1.9GHz Reverse Isolation 24.1 dB 0.9GHz 18.4 dB 1.9GHz Device Operating Voltage 5.00 5.25 V Device Operating Current 75 90 105 mA Quiescent Thermal Resistance 65 °C/W Junction to lead Test Conditions: VD =5V, IDQ =90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS =ZL =50, 25°C, Broadband Application Circuit RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110408 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 SPF5122Z Absolute Maximum Ratings Parameter Rating Unit Max Device Current (lD) 120 Max Device Voltage (VD) 5.5 V Max RF Input Power 27 dBm 660 mW Max Dissipated Power Max Junction Temperature (TJ) mA 150 °C Operating Temperature Range (TL) -40 to + 85 °C Max Storage Temperature -65 to +150 °C ESD Rating - Human Body Model (HBM) Class 1B Moisture Sensitivity Level (MSL) MSL 1 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and