TQP7M9102
1/2 W High Linearity Amplifier
®
General Description
The TQP7M9102 is a high linearity driver amplifier in a lowcost, RoHS compliant, surface mount package. This
InGaP/GaAs HBT delivers high performance across a
broad range of frequencies with +44 dBm OIP3 and +27.5
dBm P1dB while only consuming 135 mA quiescent
current. All devices are 100% RF and DC tested.
3 Pin SOT-89 Package
Product Features
The TQP7M9102 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input power
levels that may occur in a system. On-chip ESD protection
allows the amplifier to have a very robust Class 1C HBM
ESD rating.
• 400 – 4000 MHz
The TQP7M9102 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. The device an excellent
candidate for transceiver line cards in current and next
generation multi-carrier 3G / 4G base stations.
• On-Chip ESD Protection
• +27.5 dBm P1dB
• +44 dBm Output IP3
• 17.8 dB Gain at 2140 MHz
• +5 V Single Supply, 135 mA Current
• Internal RF Overdrive Protection
• Internal DC Overvoltage Protection
• SOT-89 Package
Applications
• Repeaters
• Mobile Infrastructure
• CDMA / WCDMA / LTE
Functional Block Diagram
• General Purpose Wireless
Backside Paddle - GND
1
2
RF IN
GND
3
RF OUT / VCC
Top View
Ordering Information
Part No.
Description
TQP7M9102
0.5 W High Linearity Amplifier
TQP7M9102-PCB900
869 – 960 MHz Evaluation Board
TQP7M9102-PCB2140
2.11 – 2.17 GHz Evaluation Board
TQP7M9102-PCB2600
2.5–2.7 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
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TQP7M9102
1/2 W High Linearity Amplifier
®
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Storage Temperature
Parameter
-65 to 150 °C
RF Input Power, CW, 50Ω, T=25°C
+27 dBm
Device Voltage (VCC)
Device Voltage (VCC)
Min
Typ
Max
Units
+4.75
+5
+5.25
V
+105
°C
+170
°C
TCASE
-40
Tj for >106 hours MTTF
+8 V
Exceeding any one or a combination of the Absolute Maximum Rating
conditions may cause permanent damage to the device. Extended
application of Absolute Maximum Rating conditions to the device may
reduce device reliability.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Conditions (1)
Parameter
Min
Operational Frequency Range
Typ
400
Test Frequency
Max
Units
4000
MHz
2140
MHz
17.8
dB
Input Return Loss
12
dB
Output Return Loss
10
dB
+26.4
+27.5
dBm
+41
+43.8
dBm
+18.5
dBm
Gain
15.5
Output P1dB
Output IP3
Pout = +8 dBm/tone, ∆f = 1 MHz
WCDMA Channel Power
−50 dBc ACLR, Note 2
Noise Figure
3.9
Quiescent Current, ICQ
Thermal Resistance, θjc
dB
137
115
Junction to case
155
mA
50
°C/W
Notes:
1. Test conditions unless otherwise noted: VCC = +5 V, Temp. = +25 °C, matched 2140 MHz reference circuit
2. ACLR test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability
Performance Summary Table
Frequency
635
768
869
960
1540
1840
1960
2140
2140
2350
2600
3500
MHz
Gain
22.4
20.9
21.8
21.7
20.2
20.0
18.4
15.5
17.8
16.0
14.5
14.5
dB
Input Return Loss
12
9
10
17
15
17
13
8
12
17
14.5
17
dB
Output Return Loss
Output P1dB
Output IP3
14
8
12
9
6
7.5
7
8
11
8
8
11
dB
+27.3
+28.4
+27.3
+27.4
+28.2
+27.5
+27.0
+30.7
+27.6
+27.2
+28.0
+26.2
dBm
+44
+44
+43
+44
+51
+42
+46
+38
+44
+44
+44
+45
dBm
Notes:
1. Test conditions unless otherwise noted: VCC = +5 V, Temp. = +25 °C, matched reference circuit
2. Reference designs for the various frequencies are either included on this datasheet or may be obtained by contacting appsupport@qorvo.com
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TQP7M9102
1/2 W High Linearity Amplifier
®
Device Characterization Data
Output Smith Chart
Input Smith Chart
1
Gain and Maximum Stable Gain
30
0.8
4 GHz
25
Gain (dB)
4 GHz
0.6
Gain (Max)
0.4
20
0.2
0.01 GHz
0
15
-1 -0.75-0.5-0.25
-0.2 0 0.25 0.5 0.75 1
Gain (S21)
10
0.01 GHz
-0.4
5
-0.6
-0.8
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-1
Frequency (GHz)
Note: The gain for the unmatched device in a 50 ohm system is shown as the black trace labeled "Gain (S21)". In a circuit tuned for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the red trace [Gmax].
The impedance Smith chart plots are shown from 0.01 to 4 GHz.
S-Parameters
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-2.55
176.64
20.38
156.15
-35.04
-9.37
-5.88
-159.98
100
-2.91
172.21
18.15
151.53
-35.97
-20.12
-4.45
-167.94
200
-5.79
172.18
14.52
160.74
-41.94
-60.14
-3.20
177.62
400
-1.41
-163.37
19.80
154.97
-34.61
49.55
-7.14
165.58
600
-0.52
179.77
18.56
125.67
-33.11
19.10
-6.55
178.58
800
-0.45
171.80
16.85
108.86
-32.96
8.46
-5.41
178.08
1000
-0.49
165.43
15.28
95.36
-32.92
-1.08
-4.76
174.13
1200
-0.60
160.30
13.79
85.52
-33.15
-4.65
-4.38
171.06
1400
-0.60
157.51
12.55
77.70
-33.23
-9.05
-4.24
167.58
1600
-0.67
152.76
11.49
69.57
-33.03
-15.12
-4.15
163.37
1800
-0.74
148.28
10.53
62.39
-32.96
-19.02
-4.00
159.18
2000
-0.72
143.55
9.75
54.69
-33.03
-20.90
-3.89
155.31
2200
-0.78
139.03
8.88
48.56
-32.96
-25.51
-3.77
150.66
2400
-0.71
135.24
7.99
42.25
-32.88
-27.98
-3.40
146.69
2600
-0.74
131.98
7.23
36.47
-33.43
-30.45
-3.38
144.96
2800
-0.75
128.79
6.58
31.19
-33.15
-33.43
-3.44
142.02
3000
-0.80
126.32
6.09
26.41
-33.23
-36.48
-3.50
139.73
3200
-0.75
122.75
5.69
20.73
-33.43
-37.86
-3.39
137.14
3400
-0.81
118.06
5.30
14.38
-33.39
-44.57
-3.48
130.99
3600
-0.82
113.62
4.59
7.77
-33.03
-43.44
-3.34
124.40
3800
-0.71
108.88
4.07
1.73
-32.92
-50.92
-3.04
120.16
4000
-0.68
105.86
3.64
-2.85
-33.15
-54.00
-2.92
118.44
Test Conditions: VCC = +5 V, ICQ = 135 mA, Temp. = +25 °C, unmatched 50 Ohm system, reference plane at device leads
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TQP7M9102
1/2 W High Linearity Amplifier
®
617 – 652 MHz Reference Design
C4
J3 Vcc
J3
J4
1 uF
C4
C3
J4 GND
C3
L2
L3
R1
C6
C5
C1
100 pF
L1
82 nH
0805
L1
U1
C2
J1
RF
Input
C1
L2
R1
2.7
J2
3
4.7 nH
2,4
C5
C2
L3
U1
TQP7M9102
1.5 nH
100 pF
1
100 pF
C6
12 pF
RF
Output
3.9 pF
Notes:
1. See Evaluation Board PCB Information for material and stack up.
2. The recommended component values are dependent upon the frequency of operation.
3. All components are of 0603 size unless stated on the schematic.
4. Critical component placement locations:
• Distance from U1 Pin Pad 1 (left edge) to R1 (right edge): 20 mils
• Distance from U1 Pin Pad 1 (left edge) to L2 (right edge): 90 mils
• Distance from U1 Pin Pad 1 (left edge) to C5 (right edge): 235 mils
• Distance from U1 Pin Pad 3 (right edge) to L3 (left edge): 120 mils
• Distance from U1 Pin Pad 3 (right edge) to C6 (left edge): 255 mils
Bill of Material 617 – 652 MHz Reference Design
Reference Des.
Value
Description
Manuf.
n/a
U1
C1 , C2 , C3
C5
n/a
n/a
100 pF
12 pF
Printed Circuit Board
½ W High Linearity Amplifier
CAP, 0603, +/-5%. 100V NPO/COG
CAP, 0603, +/-2%. 50V. NPO/COG
Qorvo
Qorvo
various
various
C6
C4
L1
L2
L3
R1
3.9 pF
1.0 uF
82 nH
1.5 nH
4.7 nH
2.7 Ω
CAP, 0603, +/-0.1PF. 100V. NPO/COG
CAP, 0603, 10%, X5R, 10V
IND, 0805, 5%, Ceramic
IND, 0603
IND, 0603
Resistor, Chip, 0603, 5%, 1/16W
various
various
Coilcraft
various
various
various
Part Number
TQP7M9102
0805CS-820XJL
Typical Performance 617 – 652 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
Parameter
Typical Value
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
LTE Chan.
Power(1)
Units
617
22.3
10
635
22.4
12
652
22.4
14
MHz
dB
dB
Pout= +15 dBm/tone, f= 1 MHz
16
+27.1
+43.0
14
+27.3
+43.8
12
+27.3
+43.7
dB
dBm
dBm
−50 dBc ACLR
+15.8
+16.3
+16.5
dBm
Notes:
1. ACLR test set-up: 1 CH, 20 MHz BW, LTE E-TM1.1, 9.5 dB PAR at 0.01% Probability
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots 617 – 652 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5V, ICQ=137 mA (typ.)
Gain vs. Frequency
24
Input Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
23
|S11| (dB)
Gain (dB)
-5
22
21
-10
20
19
-15
617
624
631
638
645
652
617
624
631
Frequency (MHz)
Output Return Loss vs. Frequency
0
638
645
652
Frequency (MHz)
P1dB vs. Frequency
29
Temp.=+25°C
Temp.=+25°C
28
P1dB (dBm)
|S22| (dB)
-5
-10
27
26
-15
25
24
-20
617
624
631
638
645
617
652
624
631
Frequency (MHz)
OIP3 vs. Pout/tone
50
638
645
652
Frequency (MHz)
ACLR vs. Output Power
-35
TQP7M9102
Temp.=+25°C
Temp.=+25°C
652 MHz
635 MHz
45
ACLR (dBc)
OIP3 (dBm)
-40
652 MHz
40
617 MHz
-45
-50
635 MHz
617 MHz
-55
LTE 1CH 20Mz, Adj ch IBW 18.02MHz,
PAR 9.5dB no clipping
35
-60
9
10
11
12
13
14
15
16
17
18
19
14
Pout/Tone (dBm)
Datasheet December 26, 2017 | Subject to change without notice
15
16
17
18
19
20
Pout (dBm)
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TQP7M9102
1/2 W High Linearity Amplifier
®
746 – 768 MHz Reference Design
C4
J3 Vcc
J3
J4
1.0 uF
C4
C3
J4 GND
C3
R1
L2
C6
C5
C1
100 pF
L1
0805
33 nH
L1
U1
C2
R1
0402
C1
J1
1
RF
Input
100 pF
3.0
J2
3
4.7 nH
2,4
C5
C2
L2
U1
TQP7M9102
C6
100 pF
RF
Output
4.7 pF
12 pF
Notes:
5. See Evaluation Board PCB Information for material and stack up.
6. The recommended component values are dependent upon the frequency of operation.
7. All components are of 0603 size unless stated on the schematic.
8. Critical component placement locations:
• Distance from U1 Pin Pad 1 (left edge) to R1 (right edge): 0 mils
• Distance from U1 Pin Pad 1 (left edge) to C6 (right edge): 60 mils
• Distance from U1 Pin Pad 1 (left edge) to C5 (right edge): 230 mils
• Distance from U1 Pin Pad 3 (right edge) to L2 (left edge): 0 mils
Bill of Material 746 – 768 MHz Reference Design
Reference Des.
Value
Description
Manuf.
n/a
U1
C1, C2, C3
C5
n/a
n/a
100 pF
12 pF
Printed Circuit Board
½ W High Linearity Amplifier
CAP, 0603, +/-5%. 100V NPO/COG
CAP, 0603, +/-2%. 50V. NPO/COG
Qorvo
Qorvo
various
various
C6
C4
L1
L2
R1
4.7 pF
1.0 uF
33 nH
4.7 nH
3.0 Ω
CAP, 0603, +/-0.1PF. 100V. NPO/COG
CAP, 0603, 10%, X5R , 10V
IND, 0805, 5%, Ceramic
IND, 0603, +/-0.3. >5600MHZ
Resistor, Chip, 0603, 5%, 1/16W
various
various
Coilcraft
Toko
various
Part Number
TQP7M9102
0805CS-330XJL
LL1608-FSL4N7S
Typical Performance 746 – 768 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Conditions
Typical Value
Pout= +18 dBm/tone, f= 1 MHz
Datasheet December 26, 2017 | Subject to change without notice
6 of 26
746
20.9
8
10
+28.2
+47
768
20.9
9
8
+28.4
+44
Units
MHz
dB
dB
dB
dBm
dBm
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots 746 – 768 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5V, ICQ=137 mA (typ.)
Gain vs. Frequency
22
Input Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
21
|S11| (dB)
Gain (dB)
-5
20
-10
19
18
-15
745
750
755
760
765
770
745
750
Frequency (MHz)
Output Return Loss vs. Frequency
0
755
760
765
770
Frequency (MHz)
OIP3 vs. Pout/tone
50
Temp.=+25°C
Temp.=+25°C
45
|S22| (dB)
OIP3 (dBm)
-5
-10
768 MHz
746 MHz
40
35
-15
30
745
750
755
760
765
770
Frequency (MHz)
Datasheet December 26, 2017 | Subject to change without notice
15
16
17
18
19
20
21
Pout/Tone (dBm)
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TQP7M9102
1/2 W High Linearity Amplifier
®
869 – 960 MHz Evaluation Board (TQP7M9102−PCB900)
C4
J3 Vcc
J3
J4
1 uF
C4
C3
J4 GND
C3
L2
R1
C6
C5
C1
100 pF
L1
33 nH
0805
L1
U1
C2
J1
C1
R1
1
RF
Input
100 pF
1.8
C2
L2
U1
TQP7M9102
J2
3
3.3 nH
2,4
C5
8.2 pF
100 pF
C6
RF
Output
3.3 pF
Notes:
1. See Evaluation Board PCB Information for material and stack up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The recommended component values are dependent upon the frequency of operation.
4. All components are of 0603 size unless stated on the schematic.
5. Critical component placement locations:
• Distance from U1 Pin 1 (left edge) to R1 (right edge): 90 mils (4.3 deg. at 920 MHz)
• Distance from R1 (left edge) to C5 (right edge): 70 mils (3.3 deg. at 920 MHz)
• Distance from U1 Pin 3 (right edge) to L2 (left edge): 120 mils (5.7 deg. at 920 MHz)
• Distance from U1 Pin 3 (right edge) to C6 (left edge): 370 mils (17.6 deg. at 920 MHz)
Bill of Material TQP7M9102−PCB900
Reference Des.
Value
Description
Manuf.
n/a
U1
R1
L2
L1
C5
C6
C1, C2, C3
C4
n/a
n/a
1.8 Ω
3.3 nH
33 nH
8.2 pF
3.3 pF
100 pF
1.0 uF
Printed Circuit Board
TQP7M9102 Amplifier, SOT-89 pkg.
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0603, +/-0.3 nH
Inductor, 0805, 5%, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V.
NPO/COG
Cap., Chip, 0603, +/-0.1pF. 200V.
NPO/COG
Cap.,
Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
Qorvo
Qorvo
various
Toko
Coilcraft
AVX
AVX
various
various
Part Number
TQP7M9102
LL1608-FSL3N3S
0805CS-330XJLB
06032U8R2BAT2A
06032U3R3BAT2A
Typical Performance TQP7M9102−PCB900
Test conditions unless otherwise noted: VCC=+5V, ICQ=137 mA (typ.), Temp.=+25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power(1)
Noise Figure
Conditions
Pout= +19 dBm/tone, Δf=1 MHz
−50 dBc ACLR
Units
Typical Value
869
21.8
10
12
+27.3
+42.7
+18.0
5.9
920
21.9
16
10
+27.4
+43.4
+18.2
5.9
960
21.7
17
9
+27.4
+43.9
+18.1
5.9
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Probability
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots TQP7M9102−PCB900
Test conditions unless otherwise noted: VCC=+5V, ICQ=137 mA (typ.)
Gain vs. Frequency
24
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
+85°C
+25°C
23
-5
−40°C
+85°C
-5
+25°C
22
21
20
-10
−40°C
-15
-20
19
900
920
940
960
-25
860
880
900
Freq (MHz)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
860
-65
42
+85°C
+25°C
−40°C
40
15
16
17
18
19
20
ACLR Vs. Output Power
-40
13
15
17
19
17
920
940
960
Freq.= 920 MHz
27
OIP3 (dBm)
-65
16
900
Output Power vs. Input Power
29
960 MHz
920 MHz
869 MHz
40
35
15
880
Frequency (MHz)
18
19
−40°C
+25°C
+85°C
23
19
30
20
25
21
-60
14
860
45
-55
13
27
1 MHz Tone Spacing
Temp.=+25°C
-50
12
28
21
OIP3 Vs. Pout/Tone
50
Temp.=+25°C
960 MHz
920 MHz
869 MHz
-45
−40°C
+25°C
+85°C
Pout/Tone (dBm)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
960
25
11
Pout (dBm)
-35
940
26
Pout (dBm)
14
920
29
36
13
900
P1dB vs. Frequency
30
38
-60
12
880
Freq (MHz)
44
+85°C
+25°C
−40°C
-55
960
Freq.=920 MHz
1 MHz Tone Spacing
-45
-50
940
OIP3 Vs. Pout/Tone
46
Freq.=920 MHz
OIP3 (dBm)
ACLR (dBc)
-40
920
Freq (MHz)
ACLR Vs. Output Power
-35
-15
P1dB (dBm)
880
-10
-20
-25
860
ACLR (dBc)
−40°C
+25°C
|S22| (dB)
|S11| (dB)
Gain (dB)
+85°C
11
13
15
Pout (dBm)
17
19
21
-3
-1
1
3
5
7
Pin (dBm)
Pout/Tone (dBm)
Icc vs. Output Power
260
Frequency = 920 MHz
240
Icc (mA)
220
200
+85°C
180
+25°C
−40°C
160
140
120
12
14
16
18
20
22
24
26
28
Pout (dBm)
Datasheet December 26, 2017 | Subject to change without notice
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TQP7M9102
1/2 W High Linearity Amplifier
®
700 – 1000 MHz Reference Design
C5
J4
J3 Vcc
J3
1.0 uF
C5
C4
C4
0.1 uF
C3
R1
L3
C8
L2
C7
C6
C1
C3
J4 GND
L1
U1
C2
100 pF
L1
33 nH
0805
L2
C1
J1
R1
L3
1
U1
TQP7M9102
RF
Input
100 pF
5.6 nH
1.2
C6
C7
4.7 pF
12.0 pF
C2
J2
3
2,4
2.7 nH
C8
100 pF
RF
Output
3.3 pF
Notes:
1. The recommended component values are dependent upon the frequency of operation.
2. All components are of 0603 size unless stated on the schematic.
3. Entire Bias network values are critical of linearity performance.
4. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to R1 (right edge): 10 mils (0.5 deg at 920 MHz)
Distance from R1 (left edge) to C7 (right edge): 10 mils (0.5 deg at 920 MHz)
Distance from C7 (left edge) to L2 (right edge): 10 mils (0.5 deg at 920 MHz)
Distance from L2 (left edge) to C6 (right edge): 20 mils (1.0 deg at 920 MHz)
Distance from U1 Pin 3 (right edge) to L3 (left edge): 290 mils (13.8 deg at 920 MHz)
Distance from L3 (right edge) to C8 (left edge): 20 mils (1.0 deg at 920 MHz)
Bill of Material 700 – 1000 MHz Reference Design
Reference Des.
Value
Description
n/a
U1
C1,C2,C3
C4
n/a
n/a
100 pF
0.1 μF
Printed Circuit Board
½ W High Linearity Amplifier
0603, 5%, 50 V, NPO/COG
0603, 10%, 50 V, X7R
Qorvo
Qorvo
various
various
C5
L1
L2
L3
C6
C7
1.0 μF
33 nH
5.6 nH
2.7 nH
4.7 pF
12 pF
0603. 10%, 10 V, X5R
0805, 5%, cer core,0805 Coilcraft
0603, ± 0.3 nH, multilayer, Toko
0603, ± 0.3 nH, multilayer, Toko
0603, ± 0.1 pF, 200 V, NPO/COG, AVX U Series
0603, 2%, 50 V, NPO/COG
Various
Coilcraft
Toko
Toko
AVX
Various
LL-1608-FSL1N2S
0805CS-330XJL
LL1608-FSL5N6S
LL1608-FSL2N7S
06032U4R7BAT2A
C8
3.3 pF
0603, ± 0.1 pF, 200 V, NPO/COG, AVX U Series
AVX
06032U3R3BAT2A
Datasheet December 26, 2017 | Subject to change without notice
Manuf.
10 of 26
Part Number
TQP7M9102
www.qorvo.com
TQP7M9102
1/2 W High Linearity Amplifier
®
Typical Performance 700 – 1000 MHz Reference Design
Test conditions unless otherwise noted: VCC = +5 V, ICQ=135 mA , Temp = +25 °C, 50 Ω system
Parameter
Conditions
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Pout= +16 dBm / tone, f= 1 MHz
Units
700
22.2
6.3
18.8
850
21.8
7.7
14.2
1000
21.1
7.2
15.2
MHz
dB
dB
dB
+27.4
+42.3
+28
+43
+28.3
+41.3
dBm
dBm
Performance Plots 700 – 1000 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
Gain vs. Frequency
24
Return Loss (dB)
23
Gain (dB)
Return Loss vs. Frequency
0
22
21
-5
-10
Input Return Loss
Output Return Loss
-15
20
-20
19
700
750
800
850
900
950
700
1000
750
OIP3 vs. Pout/tone
50
800
850
900
950
1000
950
1000
Frequency (MHz)
Frequency (MHz)
P1dB vs. Frequency
30
29
P1dB (dBm)
OIP3 (dBm)
45
40
35
28
27
26
700 MHz
850 MHz
1000 MHz
25
30
11
13
15
17
19
21
Datasheet December 26, 2017 | Subject to change without notice
700
750
800
850
900
Frequency (MHz)
Pout/Tone (dBm)
11 of 26
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TQP7M9102
1/2 W High Linearity Amplifier
®
1800 – 2200 MHz 1 Watt Reference Design
C4
J4
J3 +5V
J3
C4
1.0 uF
C3
J4 GND
C3
22 pF
R1
C6
C1
C5
L2
L1
U1
L1
18 nH
(0805)
C2
L2
J1
RF
Input
C1
C2
R1
1
U1
TQP7M9102
2.2 nH
1.5 pF
2.7
2,4
C5
J2
3
RF
Output
22 pF
C6
1.8 pF
1.5 pF
Notes:
1. See Evaluation Board PCB Information for material and stack up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors (R2) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
• Distance from U1 Pin 1 (left edge) to R1 (right edge): 25 mils
• Distance from U1 Pin 1 (left edge) to C1 (right edge): 145 mils
• Distance from U1 Pin 1 (left edge) to C5 (right edge): 90 mils
• Distance from U1 Pin 3 (right edge) to C6 (left edge): 145 mils
Bill of Material 1800 – 2200 MHz 1 Watt Reference Design
Reference Des.
n/a
U1
C2 , C3
C1, C5
L2
C4
L1
C6
R1
Value
n/a
n/a
22 pF
1.5 pF
2.2 nH
1.0 uF
18 nH
1.8pF
2.7 Ω
Description
Manuf.
Printed Circuit Board
½ W High Linearity Amplifier
CAP, 0603, +/-1%. 200V NPO/COG
CAP, 0603, +/-0.1pF. 200V. NPO/COG
Part Number
Qorvo
Qorvo
various
various
Toko
various
Coilcraft
various
various
Ind, chip, 0603, +/-0.3nH >6000MHz
CAP, 0603, 10%, X5R , 10V
IND, 0805, 5%, Ceramic
CAP, 0603, +/-0.1pF. 200V. NPO/COG
RES, 0603, 5%
TQP7M9102
LL-1608-FSL1N2S
0805CS-180XJL
Typical Performance 1800 – 2200 MHz 1 Watt Reference Design
Test conditions unless otherwise noted: VCC =+5V, ICQ=137 mA (typ.), Temp= +25°C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Conditions
Pout= +15 dBm/tone, f= 1 MHz
Datasheet December 26, 2017 | Subject to change without notice
12 of 26
Units
Typical Value
1800
15.3
7.5
7
+29.7
+38
2000
15.5
8
8
+30.7
+38
2200
15.4
9
8
+29.9
+38
MHz
dB
dB
dB
dBm
dBm
www.qorvo.com
TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots 1800 – 2200 MHz 1 Watt Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
20
Gain vs. Frequency
Input Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
-5
|S11| (dB)
Gain (dB)
18
16
14
12
10
1800
-10
-15
-20
1900
2000
2100
-25
1800
2200
1900
Frequency (MHz)
0
2000
2100
Output Return Loss vs. Frequency
OIP3 vs. Pout/tone
45
Temp.=+25°C
Temp.=+25°C
-5
40
OIP3 (dBm)
|S22| (dB)
2200
Frequency (MHz)
-10
2200 MHz
35
2050 MHz
1900 MHz
1800 MHz
-15
-20
1800
30
25
1900
2000
2100
2200
Datasheet December 26, 2017 | Subject to change without notice
9
10
11
12
13
14
15
16
17
18
19
Pout/Tone (dBm)
Frequency (MHz)
13 of 26
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TQP7M9102
1/2 W High Linearity Amplifier
®
2110 – 2170 MHz Evaluation Board (TQP7M9102−PCB2140)
C4
J3 Vcc
J3
J4
1.0 uF
C4
C3
J4 GND
C3
C6
C1
C5
R1
22 pF
L1
U1
L1
18 nH
C2
J1
R1
C1
1
C2
U1
TQP7M9102
RF
Input
39 pF
1.5 pF
2,4
C5
J2
3
1.8 pF
3.3 pF
C6
RF
Output
0.8 pF
Notes:
1. See Evaluation Board PCB Information for material and stack up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The recommended component values are dependent upon the frequency of operation.
4. All components are of 0603 size unless stated on the schematic.
5. Critical component placement locations:
• Distance from U1 Pin 1 (left edge) to C5 (right edge): 35 mils (3.9 deg. at 2140 MHz)
• Distance from U1 Pin 1 (left edge) to C1 (right edge): 90 mils (9.9 deg. at 2140 MHz)
• Distance from U1 Pin 3 (right edge) to C6 (left edge): 210 mils (23.2 deg. at 2140 MHz)
Bill of Material TQP7M9102−PCB2140
Reference Des.
Value
Description
Manuf.
n/a
U1
R1
L1
C1
C2
C3
C4
C5
C6
n/a
n/a
39 pF
18 nH
1.5 pF
3.3 pF
22 pF
1.0 uF
1.8 pF
0.8 pF
Printed Circuit Board
TQP7M9102 Amplifier, SOT-89 pkg.
Cap., Chip, 0603, +/-1%. 200V NPO/COG
Inductor, 0805, Coilcraft CS Series
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 5%, 50V, NPO/COG
Cap., Chip, 10%, 10V, X5R
Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG
Cap., Chip, 0603, +/-0.05pF, 50V
Qorvo
Qorvo
various
Coilcraft
various
various
various
various
various
various
Part Number
TQP7M9102
0805CS-180XJLB
06032U1R5BAT2A
06032U3R3BAT2A
06032U1R8BAT2A
06032U0R8BAT2A
Typical Performance TQP7M9102−PCB2140
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp=+25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power(1)
Noise Figure
Conditions
Pout= +9 dBm/tone, Δf=1 MHz
−50 dBc ACLR
Units
Typical Value
2110
17.9
12
12
+27.8
+43.6
+18.5
3.8
2140
17.8
12
11
+27.6
+43.5
+18.4
3.9
2170
17.7
11
10
+27.4
+43.6
+18.3
4.0
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob
Datasheet December 26, 2017 | Subject to change without notice
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots TQP7M9102−PCB2140
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.)
Gain vs. Frequency
Input Return Loss vs. Frequency
0
19
+105°C
|S11| (dB)
Gain (dB)
-5
18
17
Output Return Loss vs. Frequency
0
+105°C
+85°C
-5
+85°C
+25°C
|S22| (dB)
20
−40°C
-10
+25°C
−40°C
-10
+105°C
2120
2130
2140
2150
2160
-20
2110
2170
2120
2130
Freq (MHz)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
2160
-20
2110
2170
2120
2130
Freq.=2140 MHz
1 MHz Tone Spacing
-45
+85°C
+25°C
−40°C
-55
2150
2160
2170
P1dB vs. Frequency
30
+105°C
+85°C
29
44
-50
2140
Freq (MHz)
Freq.= 2140 MHz
OIP3 (dBm)
ACLR (dBc)
-40
2150
OIP3 Vs. Pout/Tone
46
ACLR Vs. Output Power
-35
2140
Freq (MHz)
+25°C
P1dB (dBm)
15
2110
-15
-15
+85°C
+25°C
−40°C
16
+105°C
+85°C
42
+25°C
−40°C
−40°C
28
27
40
26
-60
-65
38
14
15
16
17
18
19
7
20
9
11
ACLR Vs. Output Power
-35
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
-40
13
15
25
2110
17
2120
2130
Pout/Tone (dBm)
Pout (dBm)
2150
2160
2170
Output Power vs. Input Power
29
OIP3 Vs. Pout/Tone
50
2140
Frequency (MHz)
Freq.=2140 MHz
1 MHz Tone Spacing
Temp.=+25°C
Temp.=+25°C
27
-50
2170 MHz
2140 MHz
2110 MHz
-55
40
Pout (dBm)
-45
OIP3 (dBm)
ACLR (dBc)
45
2170 MHz
2140 MHz
2110 MHz
15
16
17
18
19
20
9
11
15
17
2
4
6
LTE 1CH 20MHz, Adj ch IBW 18.02MHz,
PAR 9.5dB no clipping
240
ACLR (dBc)
Icc (mA)
200
+105°C
+85°C
180
+25°C
−40°C
-55
2170 MHz
160
-50
-55
+105°C
+85°C
-65
-65
120
14
15
16
17
18
19
20
Pout (dBm)
Datasheet December 26, 2017 | Subject to change without notice
+25°C
−40°C
-60
140
2110 MHz
Freq = 2140 MHz
-45
2140 MHz
-60
12
-40
220
-50
10
ACLR vs Output Power
-35
Frequency = 2140 MHz
-45
8
Pin (dBm)
Icc vs. Output Power
260
Temp.=+25°C
-40
ACLR (dBc)
13
Pout/Tone (dBm)
ACLR vs Output Power
LTE 1CH 20MHz, Adj ch IBW 18.02MHz,
PAR 9.5dB no clipping
+25°C
19
7
Pout (dBm)
-35
+85°C
21
30
14
+105°C
23
−40°C
35
-60
-65
25
12
14
16
18
20
Pout (dBm)
15 of 26
22
24
26
28
14
15
16
17
18
19
20
Pout (dBm)
www.qorvo.com
TQP7M9102
1/2 W High Linearity Amplifier
®
2300 – 2700 MHz Reference Design
C4
J3 +5V
J4
J3
1.0 uF
C4
C3
J4 GND
C3
22 pF
C1
R1
C6
C5
R2
L1
18 nH
(0805)
L1
U1
C2
C1
J1
R1
C2
1
U1
TQP7M9102
RF
Input
C5
1.8 pF
2.2
3
2,4
C6
22 pF
J2
RF
Output
0.9 pF
1.5 pF
Notes:
1. See Evaluation Board PCB Information for material and stack up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors (R2) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 (left edge) to R1 (right edge): 10 mils
Distance from U1 Pin 1 (left edge) to C1 (right edge): 80 mils
Distance from U1 Pin 1 (left edge) to C5 (right edge): 235 mils
Distance from U1 Pin 3 (right edge) to C6 (left edge): 165 mils
Bill of Material 2300 – 2700 Reference Design
Reference Des.
Value
Description
n/a
U1
C1
C5
C2, C3
C4
C6
R1
R2
L1
n/a
n/a
1.8 pF
1.5 pF
22 pF
1.0 uF
0.9 pF
2.2 Ω
0Ω
18 nH
Printed Circuit Board
½ W High Linearity Amplifier
CAP, 0603, ± 0.05 pF, 50V, ACCU-P
CAP, 0603, ± 0.05 pF, 50V, ACCU-P
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, 10%, X5R , 10V
CAP, 0603
RES, 0402
RES, 0603, 5%, 1/16W, Chip
IND, 0805, 5%, Ceramic
Datasheet December 26, 2017 | Subject to change without notice
Manuf.
16 of 26
Qorvo
Qorvo
AVX
AVX
various
various
AVX
various
various
Coilcraft
Part Number
TQP7M9102
06035J1R8ABSTR
06035J1R5ABSTR
06035J0R9ABSTR
0805CS-180XJL
www.qorvo.com
TQP7M9102
1/2 W High Linearity Amplifier
®
Typical Performance 2300 – 2700 Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp=+25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
Units
Typical Value
2300
13.8
5.5
12.6
+27.7
+43.8
Pout= +9 dBm / Tone, Δf = 1 MHz
2500
14.7
13.3
12
+27.8
+44.0
2700
13.6
7.9
10.6
+27.1
+45.9
MHz
dB
dB
dB
dBm
dBm
Performance Plots 2300 – 2700 Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
Gain vs. Frequency
16
Input Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
15
14
|S11| (dB)
Gain (dB)
-5
13
-10
-15
12
11
2300
2400
2500
2600
-20
2300
2700
2400
0
Output Return Loss vs. Frequency
2600
2700
OIP3 vs. Pout / Tone
50
Temp.=+25°C
Temp.=+25°C
45
|S22| (dB)
OIP3 (dBm)
-5
2300 MHz
2500 MHz
2700 MHz
40
-10
-15
2300
2500
Frequency (MHz)
Frequency (MHz)
35
2400
2500
2600
9
2700
Datasheet December 26, 2017 | Subject to change without notice
11
13
15
17
19
Pout / Tone (dBm)
Frequency (MHz)
17 of 26
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TQP7M9102
1/2 W High Linearity Amplifier
®
2.5 – 2.7 GHz Evaluation Board (TQP7M9102−PCB2600)
C4
J4
J3 +5V
J3
1.0 uF
C4
C3
J4 GND
C3
22 pF
C1
R1
C6
C5
R2
L1
U1
L1
18 nH
(0805)
C2
C1
J1
R1
C2
1
U1
TQP7M9102
RF
Input
C5
1.8 pF
1.0
J2
3
2,4
C6
RF
Output
22 pF
0.6 pF
1.5 pF
Notes:
1. See Evaluation Board PCB Information for material and stack up.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors (R2) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
• Distance from U1 Pin 1 (left edge) to R1 (right edge): 13 mils
• Distance from U1 Pin 1 (left edge) to C1 (right edge): 70 mils
• Distance from U1 Pin 1 (left edge) to C5 (right edge): 148 mils
• Distance from U1 Pin 3 (right edge) to C6 (left edge): 78 mils
Bill of Material TQP7M9102−PCB2600
Reference Des.
Value
Description
n/a
U1
C1
C5
C2, C3
C4
C6
R1
R2
L1
n/a
n/a
1.8 pF
1.5 pF
22 pF
1.0 uF
0.6 pF
1.0 Ω
0Ω
18 nH
Printed Circuit Board
½ W High Linearity Amplifier
CAP, 0603, ± 0.05 pF, 50V, ACCU-P
CAP, 0603, ± 0.05 pF, 50V, ACCU-P
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, 10%, X5R , 10V
CAP, 0603, ± 0.05 pF, 50V, ACCU-P
RES, 0402, 1%, 1/16W. CHIP.
RES, 0603, 5%, 1/16W, Chip
IND, 0805, 5%, Ceramic
Manuf.
Qorvo
Qorvo
AVX
AVX
various
various
AVX
various
various
Coilcraft
Part Number
TQP7M9102
06035J1R8ABSTR
06035J1R5ABSTR
06035J0R6ABSTR
0805CS-180XJL
Typical Performance TQP7M9102−PCB2600
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power(1)
Conditions
Pout= +11 dBm/tone, Δf=1 MHz
−50 dBc ACLR
Units
Typical Value
2500
14.3
8.5
8.5
+28.0
+44.0
+17.5
2600
14.5
14.5
8
+28.0
+43.7
+17.5
2700
14.1
12
7.5
+28.0
+43.0
+17.5
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Datasheet December 26, 2017 | Subject to change without notice
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots TQP7M9102−PCB2600
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp.=+25 °C
Gain vs. Frequency
17
Input Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
16
-5
|S11| (dB)
Gain (dB)
15
14
13
12
-10
-15
11
10
2300
2400
2500
2600
2700
2800
-20
2300
2900
2400
2500
Frequency (MHz)
Output Return Loss vs. Frequency
0
2600
2700
2900
P1dB vs. Frequency
30
Temp.=+25°C
Temp.=+25°C
29
P1dB (dBm)
-5
|S22| (dB)
2800
Frequency (MHz)
-10
28
27
-15
26
-20
2300
2400
2500
2600
2700
2800
25
2500
2900
2550
Frequency (MHz)
OIP3 vs. Pout/tone
50
2600
2650
ACLR vs. Output Power
-35
Temp.=+25°C
Temp.=+25°C
WCDMA Test Model 1+64 Channels,
PAR=10.3dB @ .01% probability,
3.84MHz BW, ±5MHz offset
-40
ACLR (dBc)
OIP3 (dBm)
45
2700 MHz
40
2700
Frequency (MHz)
2600 MHz
2500 MHz
-45
-50
2700 MHz
-55
2600 MHz
35
2500 MHz
-60
30
-65
8
9
10
11
12
13
14
15
11
Pout/Tone (dBm)
Datasheet December 26, 2017 | Subject to change without notice
12
13
14
15
16
17
18
19
20
21
Pout (dBm)
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TQP7M9102
1/2 W High Linearity Amplifier
®
3400 – 3600 MHz Reference Design
C4
J4
J3 +5V
J3
1.0 uF
C4
C3
J4 GND
C3
22 pF
C1
C6
C5
R2
L1
U1
L1
18 nH
(0805)
C2
J1
C2
C1
R2
U1
1
TQP7M9102
RF
Input
0
C5
2,4
0.7 pF
22 pF
C6
RF
Output
0.7 pF
0.8 pF
Notes:
7.
8.
9.
10.
11.
12.
J2
3
See Evaluation Board PCB Information for material and stack up.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistors (R2) may be replaced with copper trace in the target application layout.
The recommended component values are dependent upon the frequency of operation.
All components are of 0603 size unless stated on the schematic.
Critical component placement locations:
•
Distance from U1 Pin 1 (left edge) to C1 (right edge): 87 mils
•
Distance from U1 Pin 1 (left edge) to C5 (right edge): 210 mils
•
Distance from U1 Pin 3 (right edge) to C6 (left edge): 105 mils
Bill of Material 3400 – 3600 MHz Reference Design
Reference Des.
Value
Description
Manuf.
n/a
U1
R2
C1 , C6
C5
C2 , C3
C4
L1
n/a
n/a
0Ω
0.7 pF
0.8 pF
22 pF
1.0 uF
18 nH
Printed Circuit Board
0.25 W High Linearity Amplifier
RES , 0603, 5PCT. 1/16W. CHIP
CAP, 0603, ± 0.1 pF, 50V
CAP, 0603, ± 0.1 pF, 50V
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, 10%, X5R , 10V
Inductor, 0805, 5%, Coilcraft CS series
Qorvo
Qorvo
various
various
various
various
various
Coilcraft
Part Number
TQP7M9102
0805CS-180XJLB
Typical Performance 3400 – 3600 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5V, ICQ=137 mA (typ.), Temp.=+25°C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power(1)
Conditions
Pout= +11 dBm/tone, Δf=1 MHz
−50 dBc ACLR
Units
Typical Value
3400
14.2
9
15
+27.1
+43.3
+18.0
3500
14.5
17
11
+26.7
+44.6
+17.5
3600
13.8
9
8
+26.2
+44.6
+17.0
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob
Datasheet December 26, 2017 | Subject to change without notice
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots 3400 – 3600 MHz Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp=+25°C
Gain vs. Frequency
16
Input Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
-5
|S11| (dB)
Gain (dB)
15
14
13
-10
-15
12
3400
3450
3500
3550
-20
3400
3600
3450
Frequency (MHz)
Output Return Loss vs. Frequency
0
3500
3550
3600
Frequency (MHz)
OIP3 vs. Pout/tone
50
TQP7M9102
Temp.=+25°C
Temp.=+25°C
45
OIP3 (dBm)
|S22| (dB)
-5
-10
-15
3600 MHz
40
3500 MHz
3400 MHz
35
-20
3400
30
3450
3500
3550
3600
9
10
11
12
Frequency (MHz)
14
15
16
17
18
19
P1dB vs. Frequency
ACRL vs. Pout
29
-30
WCDMA Test Model 1+64 Channels,
PAR=10.3dB @ .01% probability,
3.84MHz BW, ±5MHz offset
-35
Temp.=+25°C
Temp.=+25°C
28
3600 MHz
-40
27
3500 MHz
P1dB (dBm)
ACLR (dBC)
13
Pout/Tone (dBm)
3400 MHz
-45
-50
26
25
24
-55
23
22
3400
-60
11
12
13
14
15
16
17
18
19
20
21
Datasheet December 26, 2017 | Subject to change without notice
3450
3500
3550
3600
Frequency (MHz)
Pout (dBm)
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TQP7M9102
1/2 W High Linearity Amplifier
®
Application Note 1.8-2.2 GHz (1/2 Watt - 1 Watt) Tunable Reference Design
This application note describes the ability to take the TQP7M9102 1.8-2.2 GHz design and tune it from 1/2 Watt to 1 Watt
simply by changing the output match (one component). By use of Load-Pull data we were able to see the capability of
this part to be tuned from +27 dBm P1dB to +30 dBm by trading off OIP3 performance. This gives the end user the option
to run the TQP7M9102 as a 1 Watt device over a wide frequency band.
Below are the different Reference Design options which show the performance trade-offs between P1dB and OIP3 by
changing the value and placement of C6.
Evaluation Board
J4
C4
J3
J3 +5V
C4
1.0 uF
C3
J4 GND
C3
22 pF
C1
R1
C6
L2
C5
J1
L1
U1
L1
18 nH
(0805)
J2
C2
J1
RF
Input
L2
C1
R1
C2
1
U1
TQP7M9102
2.2 nH
1.8 pF
2.7
C5
1.5 pF
2,4
3
C6
22 pF
J2
RF
Output
0.8 - 2.0 pF
Notes:
1. All components are of 0603 size unless stated on the schematic.
2. The recommended component values are dependent upon the frequency of operation.
3. Critical component placement locations:
• Distance between U1 Pin 1 Pad to R1 (right edge): 10 mil
• Distance between U1 Pin 1 Pad to C1 (right edge): 110 mil
• Distance between U1 Pin 1 Pad to C5 (right edge): 65 mil
• Distance between U1 Pin 3 Pad to C6 (left edge): see below:
Component Placement
Option
P1dB
C6 Value (pF)
Line Length (mils)
Electrical Length
at 2 GHz (degrees)
1
30.0
2.0
145
15.0
2
29.0
1.8
170
17.6
3
28.0
1.2
230
23.8
4
27.0
0.8
290
30.0
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TQP7M9102
1/2 W High Linearity Amplifier
®
Performance Plots 1.8-2.2 GHz (1/2 Watt - 1 Watt) Tunable Reference Design
Test conditions unless otherwise noted: VCC=+5 V, ICQ=137 mA (typ.), Temp=+25°C
Gain vs. Frequency
17
Input Return Loss vs. Frequency
0
Option 1
Option 2
Option 3
Option 4
14
13
1800
1900
2000
2100
-5
Option 1
Option 2
-10
Option 3
Option 4
-15
-20
1800
2200
1900
Frequency (MHz)
2200
1900
2000
2100
Option 4
45
40
TQP7M9102
Temp.=+25°C
Option 1
Option 4
45
14
15
16
17
Option 4
45
Freq = 2170 MHz
Freq = 1960 MHz
35
35
13
Option 3
40
40
12
Option 2
50
Option 3
Freq = 1805 MHz
35
18
19
2200
OIP3 vs. Pout/tone
55
Temp.=+25°C
OIP3 (dBm)
OIP3 (dBm)
Option 3
11
-20
1800
Option 2
50
Option 2
10
-15
Option 1
Option 1
9
Option 4
-10
Frequency (MHz)
TQP7M9102
Temp.=+25°C
OIP3 (dBm)
2100
Option 3
OIP3 vs. Pout/tone
55
TQP7M9102
50
2000
Option 2
-5
Frequency (MHz)
OIP3 vs. Pout/tone
55
Temp.=+25°C
Option 1
Output Return Loss (dB)
Gain (dB)
16
15
Output Return Loss vs. Frequency
0
Temp.=+25°C
Input Return Loss (dB)
Temp.=+25°C
9
10
11
12
13
14
15
16
17
18
19
10
11
12
13
14
15
16
17
18
19
Pout/Tone (dBm)
Pout/Tone (dBm)
Pout/Tone (dBm)
9
P1dB vs. Frequency
31
P1dB (dBm)
30
29
28
27
Option 1
Option 2
26
Option 3
Temp.=+25°C
Option 4
25
1800
1900
2000
2100
2200
Frequency (MHz)
Datasheet December 26, 2017 | Subject to change without notice
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TQP7M9102
1/2 W High Linearity Amplifier
®
Pin Configuration and Description
Backside Paddle - GND
Pin No.
Label
1
RF IN
2, Backside Paddle
GND
3
RF OUT / VCC
1
2
RF IN
GND
3
RF OUT / VCC
Description
RF input. External DC Block required. Requires conjugate match for optimal
performance.
RF/DC ground. Use recommended via pattern to minimize inductance and
thermal resistance. See PCB Mounting Pattern for suggested footprint.
RF output, matched to 50 ohms. External DC Block and bias voltage required.
Evaluation Board PCB Information
PC Board Layout
PCB Material (stackup):
1 oz. Cu top layer
0.014 inch Nelco N-4000-13, εr=3.7
1 oz. Cu MIDDLE layer 1
Core Nelco N-4000-13
1 oz. Cu middle layer 2
0.014 inch Nelco N-4000-13
1 oz. Cu bottom layer
Finished board thickness is 0.062±.006
50 ohm line dimensions: width = .028”, spacing = .028”.
The pad pattern shown has been developed and tested for
optimized assembly at Qorvo. The PCB land pattern has
been developed to accommodate lead and package
tolerances. Since surface mount processes vary from
supplier to supplier, careful process development is
recommended.
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TQP7M9102
1/2 W High Linearity Amplifier
®
Package Marking and Dimensions
Package Marking
Product ID:
7M9102
Trace Code:
XXXX
Notes:
1. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
2. Trace code up to 4 characters to be assigned by sub-contractor
PCB Mounting Pattern
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation.
4. Do not remove or minimize via hole structure in the PCB. Thermal and RF grounding is critical.
5. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10”).
6. Ensure good package backside paddle solder attach for best electrical and thermal performance.
Datasheet December 26, 2017 | Subject to change without notice
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TQP7M9102
1/2 W High Linearity Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
Class 2
ESDA / JEDEC JS-001-2014
ESD – Charged Device Model (CDM)
Class C3
ESDA / JEDEC JS-002-2014
MSL – Moisture Sensitivity Level
Level 1
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with lead-free (260°C max. reflow temp.) soldering process.
Solder profiles available upon request.
Contact plating: Annealed Matte Tin or Nickel Palladium Gold (NiPdAu)
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2017 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
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