TQP7M9103
1W High Linearity Amplifier
®
Product Overview
The TQP7M9103 is a high linearity driver amplifier in
industry standard, RoHS compliant, SOT-89 surface mount
package. This InGaP/GaAs HBT delivers high performance
across a broad range of frequencies while achieving
+45 dBm OIP3 and +29.5 dBm P1dB while only consuming
235 mA quiescent current. All devices are 100% RF and
DC tested.
The TQP7M9103 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input power
levels that may occur in a system.
The TQP7M9103 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. The device an excellent
candidate for transceiver line cards and high power
amplifiers in current and next generation multi-carrier
3G / 4G base stations.
Functional Block Diagram
3-pin SOT−89 Package
Key Features
•
•
•
•
•
•
•
•
400 – 4000 MHz
+29.5 dBm P1dB
+45 dBm Output IP3
16.5 dB Gain at 2140 MHz
+5 V Single Supply, 235 mA Current
Internal RF Overdrive Protection
Internal DC Overvoltage Protection
On chip ESD Protection
• RF Power Handling 10:1 VSWR, VCC=+5 V, 2.14 GHz
Pout=+29.5 dBm CW
Pout=+20 dBm WCDMA
• SOT−89 Package
Applications
•
•
•
•
•
GND
4
1
2
3
RF IN
GND
RF OUT
Top View
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
Ordering Information
Part No.
Description
TQP7M9103
TQP7M9103-PCB900
TQP7M9103-PCB2140
TQP7M9103-PCB2600
1 W High Linearity Amplifier
920 – 960 MHz Evaluation Board
2.11 – 2.17 GHz Evaluation Board
2.62 – 2.69 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Data Sheet, April 13, 2018 | Subject to change without notice
1 of 24
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TQP7M9103
1W High Linearity Amplifier
®
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50 Ω, T=+25 °C
Device Voltage (VCC)
Recommended Operating Conditions
Parameter
Rating
−65 to 150 °C
+30 dBm
+8 V
Device Voltage (VCC)
TCASE
Tj for >106 hours MTTF
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Min
Typ
Max Units
+5.0
+5.25
+105
+170
−40
V
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC = +5.0 V, Temp= +25 °C
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Output Power
Noise Figure
Quiescent Current, ICQ
Thermal Resistance, θjc
Notes:
1.
Conditions
Min
Typ
400
14.7
Pout = +15 dBm/tone, ∆f = 1 MHz
−50 dBc ACLR (1)
+28.5
+42.5
210
Module (junction to case)
Max Units
4000
2140
16.6
12.0
15.0
+29.5
+45
+20
4.4
235
17.7
260
35.6
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C/W
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet, April 13, 2018 | Subject to change without notice
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TQP7M9103
1W High Linearity Amplifier
®
Device Characterization Data
Output Smith Chart
Input Smith Chart
Gain and Maximum Stable Gain
30
1
Gain (Max)
25
0.8
4 GHz
4 GHz
0.6
Gain (dB)
20
0.4
15
0.01 GHz
Gain (S21)
0.2
0
10
-0.2 0 0.25 0.5 0.75 1
-1 -0.75-0.5-0.25
0.01 GHz
-0.4
5
-0.6
0
-0.8
0
0.5
1
1.5
2
2.5
3
3.5
4
-1
Frequency (GHz)
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in red color, [Gain (S21)]. For a tuned circuit for a particular
frequency, its expected gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the black trace, [Gain (Max)]. The
impedance plots are shown from 0.01– 4 GHz.
S-Parameters
Test Conditions: VCC=+5 V, ICQ=235 mA, T=+25°C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
3800
4000
S11 (dB)
-1.05
-1.15
-2.07
-1.01
-0.61
-0.59
-0.62
-0.62
-0.67
-0.64
-0.75
-0.64
-0.62
-0.77
-0.66
-0.73
-0.69
-0.74
-0.74
-0.72
-0.77
-0.80
S11 (ang)
179.35
176.19
171.50
-176.54
173.92
169.36
164.62
160.93
156.67
153.26
149.43
145.77
142.62
139.07
135.41
132.81
128.99
125.72
122.13
119.18
116.00
113.01
Data Sheet, April 13, 2018 | Subject to change without notice
S21 (dB)
15.75
13.33
11.63
15.01
13.87
13.05
12.35
11.51
10.73
10.00
9.12
8.50
7.90
7.16
6.58
6.04
5.51
5.01
4.52
4.02
3.52
3.15
S21 (ang)
154.01
155.93
168.26
153.46
137.55
125.26
114.05
103.77
94.67
86.25
78.19
70.63
63.72
57.32
51.13
45.43
39.41
33.18
27.44
22.42
16.74
11.74
3 of 24
S12 (dB)
-35.54
-35.54
-37.45
-36.02
-35.08
-34.89
-34.56
-34.60
-34.79
-34.75
-34.75
-34.81
-34.51
-34.72
-34.60
-34.65
-34.51
-34.65
-34.60
-34.56
-34.37
-34.33
S12 (ang)
-2.51
-9.63
-27.07
22.73
6.61
0.27
-4.24
-7.64
-12.27
-15.00
-17.78
-20.08
-23.77
-26.63
-29.04
-33.24
-33.49
-34.26
-37.56
-43.68
-44.96
-46.26
S22 (dB)
-2.94
-2.28
-2.00
-3.38
-3.21
-3.18
-3.13
-3.21
-3.18
-3.21
-3.25
-3.09
-3.24
-3.10
-3.07
-3.16
-3.09
-3.12
-3.09
-3.13
-3.04
-2.96
S22 (ang)
-171.04
-176.20
176.45
172.64
171.33
168.76
166.33
164.22
162.12
159.50
156.37
154.32
151.96
148.69
147.12
144.43
141.32
138.96
136.12
133.54
130.91
128.69
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TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, 615 – 655 MHz Reference Design
J4
J3
C7
J3 +5V
1.0 uF
C6
J4 GND
C7
C6
L1
L2
C5
C3
C1
100 pF
L3
U1
L3
33 nH
C2
J1
C1
L1
L2
U1
1
TQP7M9103
RF
Input
100 pF
C3
3.9 nH
2,4
C2
3
3.9 nH
C5 100 pF
J2
RF
Output
7.5 pF
10 pF
Notes:
1.
2.
3.
4.
5.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
• Distance between U1 Pin 1 Pad left edge to L1 (right edge): 55 mil
• Distance between U1 Pin 1 Pad left edge to C3 (right edge): 130 mil
• Distance between U1 Pin 3 Pad right edge to C5 (left edge): 160 mil
• Distance between U1 Pin 3 Pad right edge to L2 (left edge): 85 mil
Bill of Material, 615 – 655 MHz
Reference Des.
n/a
Value
Description
Manuf.
Part Number
n/a
Printed Circuit Board
Qorvo
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9103
C3
10 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U100J
C5
7.5 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U7R5B
C1, C2, C6
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C7
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
L1, L2
3.9 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL3N9S
L3
33 nH
IND, 0805, 5%, Wirewound
Coilcraft
0805CS-330XJL
Data Sheet, April 13, 2018 | Subject to change without notice
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TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 615 – 655 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power (1)
Typical Value
617
20.9
9.5
20
+29.3
+47.7
+19.3
Pout = +19 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
Units
635
20.9
10
19
+29.5
+46.2
+19.2
652
20.8
10
18
+29.7
+44.2
+18.3
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. 1C 20MHz LTE signal, PAR=9.5dB
Performance Plots, 615 – 655 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
23
Return Loss vs. Frequency
0
OIP3 vs. Pout/tone
49
48
-5
21
20
19
47
46
OIP3 (dBm)
|S11| & |S22| (dB)
Gain (dB)
22
-10
-15
45
44
43
42
-20
41
617 MHz
Input Return Loss
40
635 MHz
Output Return Loss
18
652 MHz
-25
600
610
620
630
640
650
660
670
39
600
610
620
Frequency (MHz)
630
640
650
660
670
Frequency (MHz)
14
15
16
17
18
19
20
21
22
Pout/Tone (dBm)
ACPR vs Pout
-35
1C 20MHz LTE signal, PAR=9.5dB
ACPR (dBc)
-40
-45
-50
-55
617 MHz
635 MHz
652 MHz
-60
15
16
17
18
19
20
21
22
Pout (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
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TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, 758 – 875 MHz Reference Design
C9
J4
1.0uF
J3
C8
J3 Vcc
0.1uF
C9
C8
C7
C7
J4 GND
C4
L2
C1
C2
L1
U1
C6
L1
18 nH
(0805)
J1
C2
1
L2
U1
TQP7M9103
RF
Input
4.7 pF
C1
100pF
2,4
6.8 pF
C6
3
3.3 nH
C4
J2
100 pF RF
Output
5.6 pF
Notes:
6.
7.
8.
9.
10.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
• Distance between U1 Pin 1 Pad left edge to C1 (right edge): 362 mil
• Distance between U1 Pin 3 Pad right edge to L2 (left edge): 150 mil
• Distance between U1 Pin 3 Pad right edge to C4 (left edge): 230 mil
Bill of Material, 758 – 875 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9103
C1
6.8 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U6R8BAT2A
C2
4.7 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U4R7BAT2A
C6, C7
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C9
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
C4
5.6 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
C8
0.1 uF
CAP, chip, 0603
Various
L2
3.3 nH
IND, 0805, 5%, Ceramic
TOKO
LL1608-FSL3N3S
L1
18 nH
IND, 0805, 5%, Wirewound
Coilcraft
0805CS-180XJL
Data Sheet, April 13, 2018 | Subject to change without notice
6 of 24
AVX
06032U5R6BAT2A
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TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 758 – 875 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power (1)
Typical Value
758
21
7.7
16.5
+29.2
+46.5
+19.5
Pout = +19 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
803
21.5
11.7
17
+29.5
+43.7
+19.8
Units
875
21.3
11.5
30
+29
+41.7
+19.2
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
2. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Performance Plots, 758 – 875 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
23
Return Loss vs. Frequency
0
Temp.=+25°C
Output IP3 vs. Pout / Tone
55
Temp.=+25°C
Temp.=+25°C
22
-5
50
20
|S22|
-10
OIP3 (dBm)
|S11|, |S22| (dB)
Gain (dB)
803 MHz
21
|S11|
-15
758 MHz
45
40
875 MHz
860 MHz
19
-20
18
35
-25
750
775
800
825
850
875
30
750
775
Frequency (MHz)
800
825
850
P1dB vs. Frequency
32
15
16
31
ACLR (dBc)
29
18
19
20
21
ACLR vs. Pout
W-CDMA 3GPP Test Model 1+64 DPCH,
PAR = 10.2 dB at 0.01% Probability,
3.84 MHz BW
-40
30
17
Pout / Tone (dBm)
-35
Temp.=+25°C
P1dB (dBm)
875
Frequency (MHz)
Temp.=+25°C
-45
875 MHz
-50
803 MHz
758 MHz
28
-55
27
-60
750
775
800
825
850
875
Frequency (MHz)
Data Sheet, April 13, 2018 | Subject to change without notice
15
16
17
18
19
20
21
22
Pout (dBm)
7 of 24
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TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 869 – 894 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Units
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
869
20.8
17.5
14.3
880
20.8
18.7
14.4
894
20.8
17.2
14.5
MHz
dB
dB
dB
Output P1dB
OIP3
WCDMA Channel Power (1)
+29.2
+43.6
+19.7
+29.3
+42.9
+19.7
+29.4
+42.3
+19.7
dBm
dBm
dBm
Pout = +19 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
Notes:
1. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots, 869 – 894 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
22
Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
-5
|S11|, |S22| (dB)
Gain (dB)
21
20
-10
|S22|
|S11|
-15
19
-20
18
-25
860
870
880
890
900
860
870
Frequency (MHz)
ACLR vs. Output Power
-40
W-CDMA 3GPP Test Model 1+64 DPCH,
PAR = 10.2 dB at 0.01% Probability,
3.84 MHz BW
-45
880
890
900
Frequency (MHz)
P1dB vs. Frequency
31
Temp.=+25°C
OIP3 vs. Pout/tone
55
Temp.=+25°C
1 MHz tone spacing
Temp.=+25°C
50
30
894 MHz
-55
OIP3 (dBm)
P1dB (dBm)
ACLR (dBc)
880 MHz
-50
29
869 MHz
45
40
894 MHz
28
880 MHz
-60
35
869 MHz
-65
27
15
16
17
18
19
20
21
Output Power (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
30
870
875
880
885
Frequency (MHz)
8 of 24
890
895
17
18
19
20
21
Pout/tone (dBm)
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TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, TQP7M9103-PCB900
,
J4
J3
J3 Vcc
C7
J4 GND
1 uF
C6
C7
C6
100 pF
L2
C5
L2
C4
C3
C1
L3
U1
J1
C2
L3
33 nH
0805
J2
J1
C1
L1
1
L2
U1
TQP7M9103
RF
Input
100 pF
3.3nH
C3
C4
4.7 pF
10 pF
2,4
C2
3
2.7 nH
C5
J2
100 pF RF
Output
4.7 pF
Notes:
11. All components are of 0603 size unless stated on the schematic.
12. The recommended component values are dependent upon the frequency of operation.
13. Critical component placement locations:
• Distance between U1 Pin 1 Pad to C4 (right edge): 20 mil
• Distance between U1 Pin 1 Pad to C3 (right edge): 130 mil
• Distance between U1 Pin 3 Pad to C5 (left edge): 158 mil
• Distance between U1 Pin 3 Pad to L2 (left edge): 85 mil
Bill of Material, TQP7M9103-PCB900
Reference Des.
U1
Value
n/a
Description
1 W High Linearity Amplifier
Manuf.
Part Number
Qorvo
TQP7M9103
C3, C5
4.7 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U4R7BAT2A
C4
10 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06035A100JAT2A
C1, C2, C6
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C7
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
L1
3.3 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL3N3S
L2
2.7 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL2N7S
L3
33 nH
IND, 0805, 5%, Wirewound
Coilcraft
0805CS-330XJL
Data Sheet, April 13, 2018 | Subject to change without notice
9 of 24
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, TQP7M9103-PCB900
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power (1)
Typical Value
920
20.6
12
18
+29.8
+46.5
+20.2
Pout = +19 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
940
20.6
12
18.5
+29.9
+44.8
+20.2
Units
960
20.5
11.8
19.5
30
+44
+20.2
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Performance Plots, TQP7M9103-PCB900
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
23
+85°C
22
Input Return Loss vs. Frequency
0
+85°C
-5
+25°C
-5
+25°C
−40°C
21
20
|S22| (dB)
|S11| (dB)
−40°C
Gain (dB)
Output Return Loss vs. Frequency
0
-10
-15
-10
+85°C
-15
+25°C
−40°C
19
-20
18
-20
-25
920
930
940
950
960
-25
920
930
Frequency (MHz)
ACLR vs Output Power
-45
940
950
960
920
930
940
Frequency (MHz)
ACLR vs Output Power
-45
Temp.=+25°C
950
960
Frequency (MHz)
OIP3 vs. Pout/tone
51
50
Freq.=940 MHz
49
-50
-50
48
960 MHz
-55
940 MHz
920 MHz
OIP3 (dBm)
ACLR (dBc)
ACLR (dBc)
+85°C
+25°C
−40°C
-55
47
46
45
44
-60
-60
43
920 MHz
940 MHz
42
-65
14
15
16
17
18
19
20
21
14
15
Output Power (dBm)
16
17
18
19
28
950
960
Data Sheet, April 13, 2018 | Subject to change without notice
21
Temp.=+25°C
400
40
300
200
100
0
30
940
Frequency (MHz)
20
+25°C
45
35
27
19
500
Icc (mA)
OIP3 (dBm)
P1dB (dBm)
29
18
Icc vs. Output Power
600
−40°C
−40°C
930
17
Pout/Tone (dBm)
+85°C
+25°C
920
16
Freq.=940 MHz
50
+85°C
30
15
21
OIP3 vs. Pout / tone
55
Freq.=940 MHz
1 MHz tone spacing
31
20
Output Power (dBm)
P1dB vs Frequency
32
960 MHz
41
-65
15
16
17
18
19
Pout / tone (dBm)
10 of 24
20
21
21
23
25
27
29
31
Output Power (dBm)
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, 1805-1880 MHz Reference Design
C5
J4
J3
C5
1.0 uF
C4
C4
J3 +5V
0.1 uF
C3
C3
J4 GND
C7
C1
C6
R1
L1
U1
22 pF
C2
L1
33 nH
0805
J1
C2
C1
1
U1
TQP7M9103
RF
Input
3.0 pF
C6
3
2,4
2.4 pF
100 pF
C7
J2
RF
Output
1.8 pF
Notes:
1. All components are of 0603 size unless stated on the schematic.
2. Distance from right edge of C6 to left edge of device pin 1 pad is 65mil
3. Distance from right edge of C1 to left edge of device pin 1 pad is 110mil
4. Distance from left edge of C7 to right edge of device pin 3 pad is 210mil
Bill of Material, 1805 – 1880 MHz
Reference Des.
Value
Description
n/a
U1
C1
C6
n/a
n/a
3.0 pF
2.4 pF
Printed Circuit Board
TQP7M9103 Amplifier, SOT-89 pkg.
Cap., Chip, 0603, +/0.1pF, 200V
Cap., Chip, 0603, +/0.1pF, 200V
C7
C2
C3
C4
C5
L1
1.8 pF
100 pF
22 pF
0.1 uF
1 uF
33 nH
Cap., Chip, 0603, +/0.1pF, 200V
Cap., Chip, 0603
Cap., Chip, 0603
Cap., Chip, 0603, 10%, 16V, X7R
Cap., Chip, 0603, 10%, 10V, X5R
Inductor, 0805, 5%, Coilcraft HP Series
AVX
various
various
various
various
Coilcraft
R1
0Ω
Res, chip, 0603
various
Data Sheet, April 13, 2018 | Subject to change without notice
11 of 24
Manuf.
Part Number
Qorvo
Qorvo
AVX
AVX
06032U3R0BAT2A
06032U2R4BAT2A
06032U1R8BAT2A
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 1805 – 1880 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Units
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
1805
17.7
11.6
16.1
1850
17.7
12.3
16.3
1880
17.7
12.1
16.6
MHz
dB
dB
dB
Output P1dB
OIP3
WCDMA Channel Power (1)
+29.5
+44.1
+20.0
+29.6
+43.8
+20.2
+29.5
+43.2
+20.2
dBm
dBm
dBm
Pout = +16 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
Notes:
1. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots, 1805 – 1880 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
20
Input Return Loss vs. Frequency
0
Temp.=+25°C
0
Temp.=+25°C
18
-5
16
14
|S22| (dB)
|S11| (dB)
-5
Gain (dB)
Output Return Loss vs. Frequency
Temp.=+25°C
-10
-10
-15
-15
12
10
1800
1810
1820
1830
1840
1850
1860
1870
-20
1800
1880
1810
1820
Frequency (MHz)
1850
1860
1870
-20
1800
1880
1810
1820
1830
1840
1850
1860
1870
1880
Frequency (MHz)
OIP3 vs. Pout / Tone
55
Temp.=+25°C
W-CDMA 3GPP Test Model 1+64 DPCH,
PAR = 10.2 dB at 0.01% Probability,
3.84 MHz BW
-45
1840
Frequency (MHz)
ACLR vs. Output Power
-40
1830
P1dB vs. Frequency
32
Temp.=+25°C
Temp.=+25°C
1 MHz tone spacing
1880 MHz
50
31
1840 MHz
-55
P1dB (dBm)
OIP3 (dBm)
ACLR (dBc)
1805 MHz
-50
45
40
30
29
1880 MHz
1840 MHz
-60
28
35
1805 MHz
-65
30
16
17
18
19
20
21
22
Output Power (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
11
13
15
Pout / Tone (dBm)
12 of 24
17
19
27
1800
1810
1820
1830
1840
1850
1860
1870
1880
Frequency (MHz)
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 1930 – 1990 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Units
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
1930
17.0
15.2
13.0
1960
17.0
17.8
12.9
1990
16.9
18.3
12.8
MHz
dB
dB
dB
Output P1dB
OIP3
WCDMA Channel Power (1)
+29.3
+44.0
+20.0
+29.3
+45.2
+20.0
+29.3
+44.2
+20.0
dBm
dBm
dBm
Pout = +16 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
Notes:
1. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots, 1930 – 1990 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
20
Input Return Loss vs. Frequency
0
0
Output Return Loss vs. Frequency
Temp.=+25°C
Temp.=+25°C
Temp.=+25°C
18
16
14
-5
|S22| (dB)
|S11| (dB)
Gain (dB)
-5
-10
-15
-10
-15
12
10
1930
1940
1950
1960
1970
1980
1990
-20
1930
1940
Frequency (MHz)
W-CDMA 3GPP Test Model 1+64 DPCH,
PAR = 10.2 dB at 0.01% Probability,
3.84 MHz BW
-45
1960
1970
1980
1940
OIP3 vs. Pout / Tone
55
Temp.=+25°C
1990
1960 MHz
45
40
30
29
28
35
1960 MHz
1980
31
P1dB (dBm)
OIP3 (dBm)
1990 MHz
-60
1970
P1dB vs. Frequency
32
1990 MHz
50
-55
1960
Temp.=+25°C
Temp.=+25°C
1 MHz tone spacing
-50
1950
Frequency (MHz)
1930 MHz
ACLR (dBc)
-20
1930
1990
Frequency (MHz)
ALCR vs Output Power
-40
1950
1930 MHz
30
-65
12
14
16
18
20
Output Power (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
12
13
14
15
16
Pout / Tone (dBm)
13 of 24
17
18
27
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
TQP7M9103-PCB2140 Evaluation Board
C5
1.0 uF
J4
J3
C4
C5
C4
J3 Vcc
0.1 uF
C3
C3
J4 GND
L1
U1
R2
C8
C7
C1
C6
R1
C2
22 pF
L1
33 nH
0805
J1
C1
U1
1
TQP7M9103
RF
Input
1.5 pF
C6
1.5 pF
2,4
C2
R2
3
0
22 pF
C7
C8
1.2 pF
0.6 pF
J2
RF
Output
Notes:
1. See PC Board Layout, page 11 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. Component (R1) is a 0 Ω resistors may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. Critical component placement locations:
Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 28 Mils (3.0° at 2140 MHz)
Distance from C6 (left edge) to C1 (right edge): 65 Mils (7.0° at 2140 MHz)
Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 31 Mils (3.4° at 2140 MHz)
Distance from C7 (right edge) to R2 (left edge): 60 Mils (6.5° at 2140 MHz)
Distance from R2 (right edge) to C8 (left edge): 62 Mils (6.7° at 2140 MHz)
Bill of Material, TQP7M9103-PCB2140
Reference Des.
Value
Description
Manuf.
Part Number
n/a
U1
C1, C6
C2, C3
C4
C5
C7
C8
R1, R2
L1
n/a
n/a
1.5 pF
22 pF
0.1 uF
1.0 uF
1.2 pF
0.6 pF
0Ω
33 nH
Printed Circuit Board
TQP7M9103 Amplifier, SOT-89 pkg.
Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P
Cap., Chip, 0603, 5%, 50V, NPO/COG
Cap., Chip, 0603, 10%, 16V, X7R
Cap., Chip, 0603, 10%, 10V, X5R
Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P
Cap., Chip, 0603, +/-0.05pF, 50V, Accu-P
Resistor, Chip, 0603, 5%, 1/16W
Inductor, 0805, 5%, Coilcraft CS Series
Qorvo
Qorvo
AVX
various
various
various
AVX
AVX
various
Coilcraft
1080068
TQP7M9103
06032U1R5BAT2A
Data Sheet, April 13, 2018 | Subject to change without notice
14 of 24
06035J1R2ABSTR
06035J0R6ABSTR
0805CS-330XJLB
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, TQP7M9103-PCB2140
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power (1)
Noise figure
Units
Typical Value
2110
16.7
11.7
16.5
+29.5
+45.0
+20
4.4
Pout = +11 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
2140
16.6
12.0
16.0
+29.5
+45.0
+20
4.4
2170
16.6
11.7
15.2
+29.6
+45.0
+20
4.6
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Performance Plots, TQP7M9103-PCB2140
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
19
Input Return Loss vs. Frequency
0
Output Return Loss vs. Frequency
0
+85°C
+25°C
18
-5
−40°C
-5
+85°C
17
16
15
−40°C
-10
-15
-20
14
2110
2120
2130
2140
2150
2160
-25
2110
2170
2120
2130
2140
2150
2140 MHz
2110 MHz
-60
-65
17
18
19
+25°C
-55
20
−40°C
2170
2140 MHz
2110 MHz
45
35
14
15
16
17
18
19
20
12
13
14
P1dB vs Frequency
32
Freq.=2140 MHz
1 MHz tone spacing
15
16
18
Icc vs. Output Power
600
Temp.=+25°C
Freq.=2140 MHz
500
+85°C
31
17
Pout / tone (dBm)
Output Power (dBm)
+85°C
2160
40
13
OIP3 vs. Pout / tone
50
2150
2170 MHz
50
+85°C
Output Power (dBm)
55
2140
Temp.=+25°C
1 MHz tone spacing
-65
16
2130
OIP3 vs. Pout / tone
55
-60
15
2120
Frequency (MHz)
OIP3 (dBm)
ACLR (dBc)
2170 MHz
14
−40°C
-25
2110
2170
-50
13
+25°C
Freq.=2140 MHz
-50
ACLR (dBc)
2160
ACLR vs Output Power
-45
Temp.=+25°C
-55
+85°C
-15
Frequency (MHz)
ACLR vs Output Power
-45
-10
-20
Frequency (MHz)
+25°C
+25°C
−40°C
45
400
30
Icc (mA)
−40°C
P1dB (dBm)
OIP3 (dBm)
|S22| (dB)
|S11| (dB)
Gain (dB)
+25°C
29
300
200
40
28
35
12
13
14
15
16
17
18
Pout / tone (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
27
2110
100
0
2120
2130
2140
2150
Frequency (MHz)
15 of 24
2160
2170
22
24
26
28
30
32
Output Power (dBm)
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, 2300 – 2400 MHz Reference Design
C5
J4
J3
1.0 uF
C4
J3 +5V
C5
C4
C3
0.1 uF
C3
J4 GND
C7
C7
C1
C6
R1
L1
U1
100 pF
C2
L1
12 nH
C2
C1
J1
Option 2
1
U1
TQP7M9103
Option 1
RF
Input
1.0 pF
C6
J2
3
2,4
1.5 pF
22 pF
C7
RF
Output
1.5 pF
Notes:
14.
15.
16.
17.
18.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
• Distance between U1 Pin 1(left edge) to C1 (right edge): 135 mil
• Distance between U1 Pin 1(left edge) to C6 (right edge): 30 mil
• Distance between U1 Pin 3(right edge) to C7 (left edge): 145 mil for Option 1 and 85 mil for Option 2
Bill of Material, 2300 – 2400 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9103
C1
CAP, 0603, +/-0.1pF, 100V, NPO/COG
Murata
GQM1885C2A1R0BB01J
C6, C7
1.5 pF
1 pF
CAP, 0603, +/-0.1pF, 100V, NPO/COG
Murata
GQM1885C2A1R5BB01J
C3
100 pF
CAP, 0603
various
C2
22 pF
CAP, 0603
various
C4
0.1 uF
CAP, chip, 0603
Various
C5
1.0 uF
CAP, 0603, 10%, X5R , 10V
Various
R1
0Ω
RES, chip, 0603
Various
L1
12 nH
IND, 0805, 5%, Wirewound
Coilcraft
Data Sheet, April 13, 2018 | Subject to change without notice
16 of 24
0805CS-120XJL
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Typical Performance (Option 1)
Typical Performance (Option 2)
Test Conditions: VCC=+5 V, Temp.=+25°C, 50Ω System
Parameter
Conditions
Typical Value
Units
Frequency
2300 2350 2400
Gain
16.6
Input Return Loss
13.3
Output Return Loss
16.2
Output P1dB
+29.3 +29.4 +29.4
Pout= +18
dBm/tone,
f= 1 MHz
Output IP3
+44
Test Conditions: VCC=+5 V, Temp.=+25°C, 50Ω System
Parameter
Conditions Typical Value
Units
MHz
Frequency
2300 2350 2400
dB
Gain
16.2
dB
Input Return Loss
14.5
19
20
dB
dB
Output Return Loss
9.7
9.6
9.8
dB
dBm
Output P1dB
+30 +30.1 +30.3 dBm
+43.9 +43.6
dBm
Output IP3
225
mA
Quiescent Collector
Current, ICQ
16.6 16.5
16
15
16.4 16.4
Quiescent Collector
Current, ICQ
Pout= +18
dBm/tone,
f= 1 MHz
MHz
16.2 16.2
dB
+41.6 +41.5 +41.1 dBm
225
mA
Performance Plots, 2300 – 2400 MHz
Gain vs. Frequency
Input Return Loss (dB)
18
Gain (dB)
Input Return Loss vs. Frequency
0
17
16
15
-5
-10
-15
-20
Option 1
2320
2360
2380
2400
P1dB vs. Frequency
2320
2360
2380
Option 2
-20
2300
2400
29
28
43
42
2350 MHz
Option 2
2400 MHz
2400
Frequency (MHz)
Data Sheet, April 13, 2018 | Subject to change without notice
2380
2400
42
41
40
2300 MHz
Option 1
2300 MHz
2350 MHz
2400 MHz
40
2380
2360
43
41
2360
2340
OIP3 vs. Pout/tone (Option 2)
44
OIP3 (dBm)
30
2340
2320
Frequency (MHz)
OIP3 vs. Pout/tone (Option 1)
45
OIP3 (dBm)
P1dB (dBm)
2340
44
2320
Option 1
-15
Frequency (MHz)
31
27
2300
-10
Option 2
2340
-25
2300
Frequency (MHz)
32
-5
Option 1
Option 2
14
2300
Output Return Loss vs. Frequency
0
Output Return Loss (dB)
19
39
12
13
14
15
16
17
Pout/Tone (dBm)
17 of 24
18
19
20
12
13
14
15
16
17
18
19
20
Pout/Tone (dBm)
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, 2500 – 2700 MHz Reference Design
C4
J4
J3 +5V
J3
1.0 uF
C3
J4 GND
C4
C3
C1
C6
R1
C5
J1
22 pF
L1
U1
C2
L1
18 nH
(0805)
J2
C2
C1
J1
1
U1
TQP7M9103
RF
Input
0.8 pF
C5
J2
3
2,4
22 pF
C6
RF
Output
1.2 pF
0.7 pF
Notes:
19.
20.
21.
22.
23.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
• Distance between U1 Pin 1 Pad to C5 (right edge): 80 mil
• Distance between U1 Pin 1 Pad to C1 (right edge): 120 mil
• Distance between U1 Pin 3 Pad to C6 (left edge): 55 mil
Bill of Material, 2500 – 2700 MHz
Reference Des.
n/a
Value
Description
Manuf.
Part Number
1100415
n/a
Printed Circuit Board
Qorvo
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9103
C1
0.8 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06032U0R8BAT2A
C5
0.7 pF
CAP, 0603, ± 0.05 pF, 50V, ACCU-P
AVX
06035J0R7ABSTR
C2, C3
22 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C4
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
C6
1.2 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
R1
0Ω
L1
18 nH
AVX
RES, 0603, 5%, 1/16W, Chip
various
IND, 0805, 5%, Ceramic
Coilcraft
Data Sheet, April 13, 2018 | Subject to change without notice
18 of 24
06035J1R2ABSTR
0805CS-180XJL
www.qorvo.com
TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 2500 – 2700 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power (1)
Typical Value
2500
14.9
-6.5
-20.0
+29.7
+43.7
+20
Pout = +11 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
2600
15.2
-9.0
-18.7
+29.6
+43.7
+20
Units
2700
15.0
-10.5
-17.1
+29.8
+44.1
+20
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Performance Plots, 2500 – 2700 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
17
Return Loss vs. Frequency
0
Temp.=+25°C
-5
15
14
13
-45
ACLR (dBc)
|S11|, |S22| (dB)
16
Gain (dB)
ACLR vs. Output Power
-40
Temp.=+25°C
Temp.=+25°C
-10
-15
-50
-55
2700 MHz
|S11|
-20
2600 MHz
-60
2500 MHz
|S22|
12
2300
2400
2500
2600
2700
2800
-25
2300
2900
-65
2400
2500
Frequency (MHz)
2600
2700
2800
2900
12
OIP3 vs. Pout / Tone
50
32
16
18
20
22
Output Power (dBm)
P1dB vs. Frequency
Temp.=+25°C
1 MHz tone spacing
Temp.=+25°C
31
P1dB (dBm)
45
OIP3 (dBm)
14
Frequency (MHz)
2700 MHz
2600 MHz
40
2500 MHz
30
29
35
28
30
7
8
9
10
11
12
13
14
15
Pout / Tone (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
27
2500
2550
2600
2650
2700
Frequency (MHz)
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TQP7M9103
1W High Linearity Amplifier
®
Evaluation Board, 3400 – 3600 MHz Reference Design
C9
J4
J3
C9
1.0uF
C8
C8
J3 Vcc
0.1uF
C7
C4
C2
C1
C5
C7
J4 GND
L1
U1
C6
L1
33 nH
(0805)
J1
C5
C2
1
U1
TQP7M9103
RF
Input
0
0.3 pF
2,4
C1
0.3 pF
22 pF
C6
3
J2
22 pF RF
Output
C4
0.9 pF
Notes:
1. All components are of 0603 size unless stated on the schematic.
2. Distance from right edge of C1 to device pin is 43mil
3. Distance from right edge of C2 to device pin is 75mil
4. Distance from right edge of C4 to device pin is 15mil
Bill of Material, 3400 – 3600 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
U1
C1, C2
C4
n/a
n/a
0.3 pF
0.9 pF
Printed Circuit Board
TQP7M9103 Amplifier, SOT-89 pkg.
Cap., Chip, 0603, +/10.05pF, 50V
Cap., Chip, 0603, 5%, 50V, NPO/COG
Qorvo
Qorvo
AVX
AVX
06035J0R3ABSTR
06035J0R9ABSTR
C6, C7
C8
C9
L1
C5
22 pF
0.1 uF
1 uF
33 nH
0Ω
Cap., Chip, 0603, 5%, 50V, NPO/COG
Cap., Chip, 0603, 10%, 16V, X7R
Cap., Chip, 0603, 10%, 10V, X5R
Inductor, 0603, 5%, Coilcraft CS Series
Res, chip, 0603
various
various
various
Coilcraft
various
Data Sheet, April 13, 2018 | Subject to change without notice
20 of 24
0603CS-33NXJL
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TQP7M9103
1W High Linearity Amplifier
®
Typical Performance, 3400 – 3600 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Typical Value
3400
13.1
8.2
18.5
+29.2
+41
Pout = +10 dBm / tone, f = 1 MHz
3500
13.5
17
16
+29.2
+40.4
Units
3600
13
11
13.7
+28.9
+39.7
MHz
dB
dB
dB
dBm
dBm
Performance Plots, 3400 – 3600 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
15
0
Return Loss vs. Frequency
Temp.=+25°C
Temp.=+25°C
14
|S11|, |S22| (dB)
Gain (dB)
-5
13
12
-10
|S22|
|S11|
-15
11
10
3400
3450
3500
3550
-20
3400
3600
3450
Frequency (MHz)
OIP3 vs. Pout/tone
45
Temp.=+25°C
1 MHz tone spacing
3500
3550
3600
Frequency (MHz)
35
P1dB vs. Frequency
Temp.=+25°C
3600 MHz
43
33
3500 MHz
P1dB (dBm)
OIP3 (dBm)
3400 MHz
41
39
37
31
29
27
35
9
10
11
12
13
14
15
16
Pout/Tone (dBm)
Data Sheet, April 13, 2018 | Subject to change without notice
25
3400
3450
3500
3550
3600
Frequency (MHz)
21 of 24
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TQP7M9103
1W High Linearity Amplifier
®
Pin Configuration and Description
GND
4
1
2
3
RF IN
GND
RF OUT
Pin No. Label
Description
1
2, 4
RF IN
GND
RF Input. Requires external match for optimal performance. External DC Block required.
RF/DC Ground Connection
3
RF OUT / Vcc
RF Output. Requires external match for optimal performance. External DC Block and
supply voltage is required.
Evaluation Board PCB Information
Qorvo PCB 1080068 Material and Stack-up
1 oz. Cu top layer
0.014"
Nelco N-4000-13
1 oz. Cu inner layer
0.062" ± 0.006"
Finished Board
Thickness
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
50 ohm line dimensions: width = .028”, spacing = .028”.
Data Sheet, April 13, 2018 | Subject to change without notice
22 of 24
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TQP7M9103
1W High Linearity Amplifier
®
Package Marking and Dimensions
Marking: Part Identifier – 7M9103
Lot code – YXXX
7M9103
YXXX
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Dimension and tolerance formats conform to ASME Y14.4M-1994.
3. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
4. Contact plating: NiPdAu
PCB Mounting Pattern
3.86 [0.152]
29X
3
1.26 [0.050]
0.63 [0.025]
0.76 [0.030]
4.50 [0.177]
Ø.254 (.010) PLATED THRU VIA HOLES
PACKAGE OUTLINE
2X 1.27 [0.050]
2X 0.58 [0.023]
2.65 [0.104]
2X 0.86 [0.034]
0.64 [0.025]
0.86 [0.034]
3.86 [0.152]
NOTES:
1. All dimensions are in millimeters [inches]. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We
recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Data Sheet, April 13, 2018 | Subject to change without notice
23 of 24
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TQP7M9103
1W High Linearity Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
2
ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM)
C3
JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level
Level 3
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: NiPdAu
RoHS Compliance
This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:
•
•
•
•
•
•
Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements.
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information:
Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2018 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet, April 13, 2018 | Subject to change without notice
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