TQP7M9104
2W High-Linearity Amplifier
®
General Description
The TQP7M9104 is a high linearity driver amplifier in
industry standard, RoHS compliant, QFN surface mount
package. This InGaP / GaAs HBT delivers high
performance across 600 – 2700 MHz range of
frequencies with 15.8 dB Gain, +49.5 dBm OIP3 and
+32.5 dBm P1dB at 2.14 GHz while only consuming
435 mA quiescent collector current. All devices are 100%
RF and DC tested.
24 Pin 4 mm x 4 mm leadless SMT Package
Product Features
The TQP7M9104 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier integrates an on-chip DC over-voltage and RF
over-drive protection. This protects the amplifier from
electrical DC voltage surges and high input RF input
power levels that may occur in a system.
The TQP7M9104 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. The device is an
excellent candidate for transceiver line cards and high
power amplifiers in current and next generation multicarrier 3G / 4G base stations.
600 – 2700 MHz
+32.8 dBm P1dB
+49.5 dBm Output IP3
15.8 dB Gain At 2140 MHz
+5 V Single Supply, 435 mA Collector Current
Internal RF Overdrive Protection
Internal DC Overvoltage Protection
Internal Active Bias
On Chip ESD Protection
Shut-down Capability
Capable Of Handling 10:1 VSWR At +5 VCC,
2.14 GHz, +32.8 dBm CW POUT Or +23.5 dBm
WCDMA POUT
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
19
20
21
22
5
14
6
13
GND/NC
RFout/Vcc
RFout/Vcc
RFout/Vcc
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Iref
12
15
11
4
7
GND/NC
16
10
RFin
17
3
9
RFin
2
GND/NC
GND/NC
18
GND/NC
GND/NC
Applications
1
8
Vbias
23
24
GND/NC
Functional Block Diagram
Ordering Information
Backside Paddle - RF/DC Ground
Part No.
Description
TQP7M9104
2 Watt High Linearity Amplifier
TQP7M9104-PCB900
920 – 960 MHz EVB
TQP7M9104-PCB2140 2.11 – 2.17 GHz EVB
Standard T / R size = 2500 pieces on a 13” reel.
Data Sheet, June 30, 2017 | Subject to change without notice
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TQP7M9104
2W High-Linearity Amplifier
®
Recommended Operating Conditions
Parameter
VCC
TCASE
Tj (for>106 hours MTTF)
Min
−40
Typ
Max
Units
+5
+5.25
+85
170
V
°C
°C
Electrical specifications are measured at specified
test conditions. Specifications are not guaranteed
over all recommended operating conditions.
Absolute Maximum Ratings
Parameter
Storage Temperature
Device Voltage, VCC
Maximum Input Power, CW
Range / Value
Units
−65 to +150 °C
+6.5 V
+30 dBm
°C
dBm
V
Operation of this device exceeding the parameter
ranges given may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: VCC=+5 V, ICQ = 435 mA, Temp= +25°C, Using a TQP7M9104 Application circuit.
Parameter
Operational Bandwidth
Test Frequency
Power Gain
Input Return Loss
Output Return Loss
Output IP3
WCDMA Channel Power (1)
Output P1dB
Noise Figure
Quiescent Collector Current, Icq
VCC
IREF
Thermal Resistance (jnc to case) θjc
Conditions
Min
Typ
600
14.3
Pout=+17 dBm / tone, ∆f=1 MHz
+45.5
At −50 dBc ACLR
+32
355
2140
15.8
12
9.5
+49.5
+23.8
+32.8
4.4
435
+5
19
15.7
Max
Units
2700
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
mA
°C / W
17.3
490
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
Data Sheet, June 30, 2017 | Subject to change without notice
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TQP7M9104
2W High-Linearity Amplifier
®
Device Characterization Data
Input Reflection Coefficients
1.0
0
0.
6
Swp Max
3GHz
4
0.
3.
0
4
4.
30
3.
0
0
4.
5.0
0.2
25
0
5.0
0.2
15
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.2
0
10.0
-10.0
-5.
0
-4
.0
-3
.0
-0
.4
2.5
3
S(1,1)
-2
.6
-2
Swp Min
0.05GHz
S(2,2)
-1.0
2
-0.8
1.5
Frequency (GHz)
-0
1
-1.0
0.5
-0.8
0
-0
.6
0
.0
.0
.4
0
-0
2
-3
.
5
-0.
-4
2
.0
-0.
Gain (S21)
0
10
-5.
Gmax
20
0.4
10.0
-10.0
Gain (dB)
0.
35
2.
2.
0
0.
0.8
Swp Max
3GHz
6
40
Output Reflection Coefficients
1.0
0.8
45
Swp Min
0.05GHz
S-Parameters
Test Conditions: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C, unmatched 50 ohm system, calibrated to device leads
Freq (GHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
−0.4553
−179.26
20.126
118.98
−43.273
4.1446
−1.8524
−155.37
100
−0.4348
178.69
15.971
124.23
−42.615
−1.4433
−1.8878
−166.21
200
−0.4583
176.36
13.24
126.46
−40.235
2.3772
−1.859
−172.01
400
−0.5124
173.38
10.778
118.38
−40.956
0.7196
−1.5792
−174.84
600
−0.5796
171.48
8.9263
108.51
−41.682
10.901
−1.6005
−175.51
800
−0.6594
170.04
7.3201
100.05
−42.533
−8.3414
−1.6164
−174.73
1000
−0.7617
169.21
6.2878
93.94
−42.841
6.4435
−1.531
−173.74
1200
−0.8777
168.95
5.7693
89.116
−40.461
3.1558
−1.6296
−171.43
1400
−1.1121
168.56
5.5556
83.209
−39.435
−0.2787
−1.7656
−170.12
1600
−1.4274
167.84
6.0222
74.67
−41.097
−1.3568
−1.8812
−167.74
1800
−1.9525
165.88
6.3509
63.971
−37.935
−22.971
−1.951
−165.22
2000
−3.0149
163.02
7.1412
51.862
−36.666
−37.917
−1.9853
−163.19
2200
−5.3234
162.27
8.1891
30.583
−35.423
−57.21
−1.7616
−163.18
2400
−7.8162
−179.65
8.2216
2.8455
−35.631
−78.615
−1.5099
−167.05
2600
−5.6951
−159.12
6.6099
−26.943
−35.017
−113.27
−1.2811
−172.58
2800
−3.2673
−161.75
3.8288
−51.412
−37.551
−151.24
−1.2268
−179.96
3000
−2.1416
−169.16
0.9043
−67.725
−39.417
−168.38
−1.4503
175.32
Data Sheet, June 30, 2017 | Subject to change without notice
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TQP7M9104
2W High-Linearity Amplifier
®
Reference Design: TQP7M9104 (615 – 655 MHz)
Vcc
+5V
C7
R6
220
C17
C20 2.2 nH
C8
6.8 pF
10 pF 6
5
20
21
22
19
GND/NC
GND/NC
GND/NC
23
RFin
RFout
GND/NC
GND/NC
7
22 pF
RFout
GND/NC
C10
U1
RFin
18
17
C15
100 pF
L1
18 nH
0805
16
C3
J3
4.7 pF
RF
Output
15
C2
14
12 pF
13
12
100 pF
4
GND/NC
RF
Input
C9
RFout
11
51
GND/NC
GND/NC
C11
GND/NC
10
J2
3
GND/NC
GND/NC
2
R2
Iref
9
C8
C3
C2
U1
C9
C20
R2
C10
C1
100 pF
B1
0
L3
0
Vbias
1
C11
GND/NC
24
C14
100 pF
GND/NC
GND/NC
L4
0
GND/NC
C15
R1
33 nH
GND/NC
B1
R1
1000 pF
R3
0
L1
C14
C17
C1
L3
L4
R3
C13
10 uF
6032
R7
110
8
R6
R7
C7
Notes:
1. Components shown on the silkscreen but not on the schematic are not used.
2. 0 Ω resistors may be replaced with copper trace in the target application layout.
3. Iref can be used as device power down current by placing R7 at location R8.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. R1 is critical for device linearity performance.
7. Critical component placement locations:
Distance between right edge of C8 and U1 device package is 193 mil
Distance between right edge of C20 and U1 device package is 336 mil
Distance between left edge of C2 and U1 device package is 453 mil
Distance between center of C9 and U1 device package is 275 mil
Typical Performance: TQP7M9104 (615 – 655 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+23 dBm / tone, ∆f = 1 MHz)
Channel Power (At −50 dBc ACLR with 20MHz LTE)
Data Sheet, June 30, 2017 | Subject to change without notice
Units
Typical Value
615
20.8
9.4
7
+34
+43.6
+19
4 of 17
635
21
9
7.7
+34.3
+43.5
+18
655
21.1
8.5
9.2
+34.6
+43.5
+18
MHz
dB
dB
dB
dBm
dBm
dB
www.qorvo.com
TQP7M9104
2W High-Linearity Amplifier
®
Performance Plots: TQP7M9104 (615 – 655 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25°C
Gain vs. Frequency
23
Return Loss vs. Frequency
0
OIP3 vs. Pout/tone
55
53
51
21
20
49
-5
OIP3 (dBm)
|S11| & |S22| (dB)
Gain (dB)
22
-10
47
45
43
41
19
39
615 MHz
Input Return Loss
37
635 MHz
Output Return Loss
18
655 MHz
-15
600
610
620
630
640
650
660
670
35
600
610
620
Frequency (MHz)
640
650
660
670
Frequency (MHz)
ACPR vs Pout
-35
630
22
23
24
25
26
27
28
Pout/Tone (dBm)
P1dB vs Frequency
36
1C 20MHz LTE signal, PAR=9.5dB
35
-40
P1dB (dBm)
ACPR (dBc)
34
-45
-50
33
32
-55
31
615 MHz
635 MHz
655 MHz
-60
12
14
16
18
20
22
24
30
26
Pout (dBm)
Data Sheet, June 30, 2017 | Subject to change without notice
610
620
630
640
650
660
Frequency (MHz)
5 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
Reference Design: TQP7M9104 (869 – 894 MHz)
Vcc
+5V
C7
R1
B1
0.1 uF
R3
0
20
21
22
19
GND/NC
GND/NC
GND/NC
18
17
C15
100 pF
L1
18 nH
0805
16
C3
J3
4.7 pF
RF
Output
15
C2
14
8.2 pF
13
12
7
8.2 pF
GND/NC
GND/NC
GND/NC
GND/NC
6
RFout
11
5
C8
RFout
RFin
GND/NC
2.7 pF
L5
6.8 nH
U1
RFin
10
22 pF
RFout
9
4
C10
100 pF
23
24
C9
51
GND/NC
GND/NC
GND/NC
C11
L3
0
GND/NC
GND/NC
J2
RF
Input
3
C1
100 pF
B1
0
Iref
GND/NC
C2
2
1000 pF
R1
33 nH
0603
Vbias
1
R2
GND/NC
GND/NC
C14
C3
GND/NC
L4
0
100 pF
C8
C10
C17
C15
U1
C9
L5
C11
C13
L1
C14
R2
C7
10 uF
6032
C1
L3
L4
R3
C13
R7
110
D3
SM05T1G
C17
8
R6
R7
R6
220
Notes:
1. Components shown on the silkscreen but not on the schematic are not used.
2. 0 Ω resistors may be replaced with copper trace in the target application layout.
3. Iref can be used as device power down current by placing R7 at location R8.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
6. R1 is critical for device linearity performance.
7. Critical component placement locations:
Distance between center of C8 and U1 device package is 243 mil (11° at 880 MHz)
Distance between center of L5 and U1 device package is 452 mil (20.5° at 880 MHz)
Distance between center of C2 and U1 device package is 355 mil (16.1° at 880 MHz)
Distance between center of C9 and U1 device package is 275 mil (12.4° at 880 MHz)
Typical Performance: TQP7M9104 (869 – 894 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+23 dBm / tone, ∆f = 1 MHz)
WCDMA Channel Power (At −50 dBc ACLR)
Data Sheet, June 30, 2017 | Subject to change without notice
Units
Typical Value
869
20.8
−13.3
−7.7
+34.3
+44.9
22
6 of 17
880
20.8
−13
−8.6
+34.1
+44.9
22.5
894
20.8
−11.5
−9.8
+33.8
+44.7
23
MHz
dB
dB
dB
dBm
dBm
dB
www.qorvo.com
TQP7M9104
2W High-Linearity Amplifier
®
Performance Plots: TQP7M9104 (869 – 894 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25°C
Gain vs. Frequency
22
Return Loss vs. Frequency
0
Temp.=+25°C
Temp.=+25°C
|S11|, |S22| (dB)
Gain (dB)
21
20
19
18
0.85
0.86
0.87
0.88
0.89
-5
S22
S11
-10
-15
-20
0.85
0.90
0.86
0.87
Frequency (GHz)
OIP3 vs. Pout / Tone
55
0.90
50
ACLR (dBm)
-45
45
0.894 GHz
0.88 GHz
0.869 GHz
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
Temp.=+25°C
OIP3 (dBm)
0.89
ACLR vs. Output Power
-40
1MHz Tone Spacing
40
0.88
Frequency (GHz)
-50
0.894 GHz
-55
0.88 GHz
0.869 GHz
-60
35
-65
30
21
22
23
24
25
26
12
27
14
16
20
22
24
26
Collector Current vs. Output Power
1,100
1,000
18
Output Power (dBm)
Pout / Tone (dBm)
Frequency : 0.88 GHz
CW Signal
Temp.=+25oC
ICC (mA)
900
800
700
600
500
400
20
22
24
26
28
30
32
34
Output Power (dBm)
Data Sheet, June 30, 2017 | Subject to change without notice
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TQP7M9104
2W High-Linearity Amplifier
®
Application Circuit : TQP7M9104-PCB900 (920 – 960 MHz)
Vcc
+5V
R6
220
R7
C7
10 uF
6032
C17
6
20
21
22
19
GND/NC
GND/NC
GND/NC
23
GND/NC
7
6.8 pF
RFout
GND/NC
GND/NC
C8
RFin
18
17
C15
100 pF
L1
18 nH
0805
16
C3
J3
4.7 pF
RF
Output
15
C2
14
8.2 pF
13
12
5
RFout
GND/NC
2.7 pF
L5
6.8 nH
GND/NC
22 pF
U1
RFin
10
4
C10
100 pF
GND/NC
24
GND/NC
C9
RFout
GND/NC
51
GND/NC
GND/NC
9
RF
Input
C11
GND/NC
GND/NC
J2
3
C1
100 pF
B1
0
Iref
GND/NC
2
R2
1000 pF
R1
33 nH
0603
L3
0
Vbias
1
C2
C9
GND/NC
C14
C3
8
R1
B1
L4
0
U1
C8
C10
L5
C11
C15
100 pF
R2
C17
0.1 uF
R3
0
L1
C14
C13
C1
L3
L4
R3
C13
11
R6
R7
110
D3
SM05T1G
C7
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and U1 device package is 190 mil (9.2° at 940 MHz)
Distance between center of L5 and U1 device package is 452 mil (21.8° at 940 MHz)
Distance between center of C2 and U1 device package is 305 mil (14.7° at 940 MHz)
Distance between center of C9 and U1 device package is 275 mil (13.3° at 940 MHz)
Data Sheet, June 30, 2017 | Subject to change without notice
8 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
Bill of Material – TQP7M9104
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
1078282
n/a
n/a
Printed Circuit Board
Qorvo
1078282
D3
n/a
Zener, dual, SOT-23
various
C9
2.7 pF
B1, L3, L4, R3
0 Ω
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
Resistor, Chip, 0603, 5%, 1/16W
AVX
06035J2R7ABSTR
various
L5
6.8 nH
Inductor, 0603, 5%
Toko
LL1608-FSL6N8
C3
4.7 pF
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
AVX
06035J4R7ABSTR
C2, C8
8.2 pF
Capacitor, Chip, 0603, ±0.05pF, 50 V, Accu-P
AVX
06035J8R2ABSTR
C10
22 pF
Capacitor, Chip, 0603, 5%, 50 V, NPO/COG
various
C1, C11, C14, C15
100 pF
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
various
L1
18 nH
Inductor, 1008, 5%, Coilcraft CS Series
Coilcraft
Capacitor, Chip, 0603, 10%, 50V, NPO/COG
various
C17
1000 pF
C13
0.1 μF
Capacitor, Chip, 0603, 50V, X5R, 10%
various
C7
10 μF
Capacitor , Tantalum, 6032, 35V, 10%
various
R2
51 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
R6
220 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R7
110 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R1
33 nH
Inductor, 0603, 5%
R8, R4, C12, C4,D3
n/a
Toko
1008HQ-18NXJL
LL1608-FSL33N
Do Not Place
Typical Performance: TQP7M9104-PCB900 (920 – 960 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA, T=+25 °C
Parameter
Frequency
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+23 dBm/tone, ∆f = 1 MHz)
WCDMA Channel power (at −50 dBc ACLR) (1)
Units
Typical Value
920
−13
−9
+33.9
+45
+24
940
−12
−11.8
+33.8
+45
+23.5
960
−11
−15
+33.4
+45
+23
MHz
dB
dB
dBm
dBm
dBm
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
Data Sheet, June 30, 2017 | Subject to change without notice
9 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
RF Performance Plots: TQP7M9104-PCB900 (920 – 960 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25°C
Gain vs. Frequency
22
20
- 40 °C
+25°C
+85 °C
19
18
0.90
0.92
0.94
-10
0.98
-15
-20
0.90
1.00
0.92
0.94
Frequency (GHz)
34
33
0.95
40
- 40 °C
+25°C
+85 °C
ACLR vs. Output Power
-45
22
23
24
25
26
21
23
24
25
26
27
Collector Current vs. Output Power
1,100
1,000
Frequency : 0.94 GHz
CW Signal
Temp.=+25oC
900
- 40 °C
+25°C
+85 °C
-60
-50
-55
ICC (mA)
ACLR (dBm)
ACLR (dBm)
22
Output Power / Tone (dBm)
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
-45
-55
0.96 GHz
0.94 GHz
18
20
22
24
Data Sheet, June 30, 2017 | Subject to change without notice
700
600
500
-65
Output Power (dBm)
800
0.92 GHz
-60
-65
16
0.92 GHz
27
ACLR vs. Output Power
-40
-50
14
0.94 GHz
40
35
Frequency : 0.94 GHz
12
0.96 GHz
45
Pout / Tone(dBm)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
1.00
30
21
Frequency (GHz)
-40
0.98
50
45
0.96
0.96
OIP3 vs. Output Power
55
30
0.94
0.94
1MHz Tone Spacing
Temp.=+25oC
35
0.93
0.92
Frequency (GHz)
50
35
32
0.92
-20
0.90
1.00
1MHz Tone Spacing
OIP3 (dBm)
P1dB (dBm)
0.98
OIP3 vs. Pout / Tone
55
+85°C
+25°C
−40°C
36
0.96
Frequency (GHz)
P1dB vs. Temperature
37
-10
-15
0.96
- 40 °C
+25°C
+85 °C
-5
|S22| (dB)
21
Output Return Loss vs. Frequency
0
- 40 °C
+25°C
+85 °C
-5
|S11| (dB)
Gain (dB)
Input Return Loss vs. Frequency
0
OIP3 (dBm)
23
26
400
12
14
16
18
20
Output Power (dBm)
10 of 17
22
24
26
16
18
20
22
24
26
28
30
32
34
Output Power (dBm)
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TQP7M9104
2W High-Linearity Amplifier
®
Application Circuit: TQP7M9104-PCB2140 (2110 – 2170 MHz)
Vcc
+5V
C7
10 uF
6032
B1
5
C8
6
20
21
22
19
GND/NC
GND/NC
GND/NC
23
RFin
RFout
GND/NC
GND/NC
7
1.5 pF
RFout
GND/NC
2.4 pF
22 pF
U1
RFin
18
17
C15
22 pF
L1
18 nH
0805
16
C3
J3
100 pF
RF
Output
15
C2
14
2.7 pF
13
12
4
RFout
GND/NC
C9
GND/NC
GND/NC
C10
L3
0
GND/NC
10
51
0
C1
100 pF
B1
0
GND/NC
GND/NC
C11
3
1000 pF
R1
120 nH
0603
Iref
9
J2
GND/NC
24
2
R2
RF
Input
C17
Vbias
1
GND/NC
C8
100 pF
C3
C2
U1
C9
GND/NC
GND/NC
C14
R2
C10
GND/NC
L1
L4
0
11
R1
C13
0.1 uF
R3
0
C15
C14
C11
C7
C1
L3
L4
R3
C13
R7
110
D3
SM05T1G
8
R6
R7
R6
220
C17
Notes:
1. See PC Board Layout under Application Information section for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 Ω resistors may be replaced with copper trace in the target application layout.
4. Iref can be used as device power down current by placing R7 at location R8.
5. The recommended component values are dependent upon the frequency of operation.
6. All components are of 0603 size unless stated on the schematic.
7. R1 is critical for device linearity performance.
8. Critical component placement locations:
Distance between center of C8 and U1 device package is 50 mil (5.5° at 2140 MHz)
Distance between center of C2 and U1 device package is 113 mil (12.4° at 2140 MHz)
Distance between center of C9 and U1 device package is 275 mil (30.3° at 2140 MHz)
Data Sheet, June 30, 2017 | Subject to change without notice
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TQP7M9104
2W High-Linearity Amplifier
®
Bill of Material – TQP7M9104-PCB2140
Reference Des.
Value
Description
Manuf.
Part Number
U1
n/a
2W High Linearity Amplifier
Qorvo
TQP7M9104
n/a
n/a
Printed Circuit Board
Qorvo
1078282
D3
n/a
Zener, dual, SOT-23
various
C8
1.5 pF
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
AVX
06035J1R5ABSTR
C9
2.4 pF
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
AVX
06035J2R4ABSTR
C2
2.7 pF
Capacitor, Chip, 0603, ±0.05pF, 50V, Accu-P
AVX
06035J2R7ABSTR
B1, L3, L4, R3, C11
0Ω
Resistor, Chip, 0603, 5%, 1/16W
various
various
C10, C15
22 pF
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
C1, C14, C3
100 pF
Capacitor, Chip, 0603, 5%, 50V, NPO/COG
various
L1
18 nH
Inductor, 1008, 5%, Ceramic
Coilcraft
Capacitor, Chip, 0603, 10%, 50V, NPO/COG
various
C17
1000 pF
C13
0.1 μF
Capacitor, Chip, 0603, 10%, 50V, X5R
various
C7
10 μF
Capacitor , Tantalum, 6032, 20 %, 50V
various
R2
51 Ω
Resistor, Chip, 0603, 5%, 1/16W
various
R6
220 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R7
110 Ω
Resistor, Chip, 0603, 1%, 1/16W
various
R1
120 nH
Inductor, 0603, 5%
R8, R4, C12, C4, D3
n/a
Toko
1008HQ-18NXJL
LL1608-FSR12J
Do Not Place
Data Sheet, June 30, 2017 | Subject to change without notice
12 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
Typical Performance: TQP7M9104-PCB2140 (2110 – 2170 MHz)
Test conditions unless otherwise noted: VCC = +5 V, ICQ = 435 mA, IREF = 19 mA
Parameter
Units
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (+17 dBm / tone, ∆f = 1 MHz)
WCDMA Channel power (at −50 dBc ACLR) (1)
Noise Figure
2110
15.8
−12.4
−8.7
+32.9
+49
+23.5
4.4
2140
15.8
−12.0
−9.5
+32.8
+49.5
+23.8
4.4
2170
15.8
−11.8
−10.5
+32.8
+50
+24.0
4.6
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.
RF Performance Plots: TQP7M9104-PCB2140 (2110 – 2170 MHz)
Test conditions unless otherwise noted: VCC=+5 V, Temp=+25 °C
Gain vs. Frequency
18
0
16
15
- 40°C
+25°C
+85°C
14
13
2.10
- 40°C
+25°C
+85°C
-5
|S11| (dB)
Gain (dB)
17
Input Return Loss vs. Frequency
2.12
2.14
2.16
-10
-15
2.18
-20
2.10
2.20
2.12
0
Output Return Loss vs. Frequency
P1dB (dBm)
|S22| (dB)
2.18
2.20
+85°C
+25°C
−40°C
34
-10
-15
-20
2.10
2.16
P1dB vs. Temperature
35
- 40°C
+25°C
+85°C
-5
2.14
Frequency (GHz)
Frequency (GHz)
33
32
31
2.12
2.14
2.16
2.18
2.20
Frequency (GHz)
Data Sheet, June 30, 2017 | Subject to change without notice
30
2.11
2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
13 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
RF Performance Plots: TQP7M9104-PCB2140 (2110 – 2170 MHz)
OIP3 vs. Pout / Tone
55
OIP3 vs. Output Power vs. Frequency
55
1MHz Tone Spacing
1MHz Tone Spacing
Temp.=+25oC
50
45
−40°C
40
+25°C
+85°C
OIP3 (dBm)
OIP3 (dBm)
50
35
45
2.17 GHz
2.14 GHz
2.11 GHz
40
35
30
30
13
15
17
19
21
23
25
13
15
17
ACLR vs. Pout / Tone
-40
21
23
25
ACLR vs. Output Power
-40
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
-45
19
Output Power / Tone(dBm)
Pout / Tone(dBm)
Temp.=+25oC
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB at 0.01% Probability
3.84 MHz BW
-45
ACLR (dBm)
ACLR (dBm)
Frequency : 2.14 GHz
-50
+85°C
-55
+25°C
-50
2.17 GHz
-55
2.14 GHz
−40°C
2.11 GHz
-60
-60
-65
-65
17
19
21
23
25
27
17
19
Pout / Tone (dBm)
ICC vs. Output Power
1,000
21
23
25
6.0
Noise Figure vs. Frequency
Temp.=+25°C
Temp.=+25oC
5.0
800
NF (dB)
Collector Current (mA)
Frequency : 2.14 GHz
CW Signal
900
27
Output Power (dBm)
700
4.0
600
3.0
500
400
16
18
20
22
24
26
28
30
32
34
2.0
2.11
Data Sheet, June 30, 2017 | Subject to change without notice
2.12
2.13
2.14
2.15
2.16
2.17
Frequency (GHz)
Output Power (dBm)
14 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
GND/NC
GND/NC
19
20
GND/NC
GND/NC
21
22
GND/NC
15
5
14
6
13
GND/NC
RFout/Vcc
RFout/Vcc
RFout/Vcc
GND/NC
GND/NC
GND/NC
GND/NC
GND/NC
Iref
12
4
11
16
7
GND/NC
3
10
RFin
17
9
RFin
2
GND/NC
GND/NC
18
GND/NC
GND/NC
1
8
Vbias
23
24
GND/NC
Pin Configuration and Description
Backside Paddle - RF/DC Ground
Pin No.
1
2, 3, 6,7, 8, 9, 10, 11,
12, 13,17, 19, 20, 21,
22, 23, 24
4, 5
14, 15, 16
18
Backside paddle
Symbol
VBIAS
GND / NC
RFIN
RFOUT / VCC
IREF
RF / DC GND
Data Sheet, June 30, 2017 | Subject to change without notice
Description
Voltage supply for active bias for the amp. Connect to same supply voltage as
Vcc.
No internal connection. This pin can be grounded or N/C on PCB. Land pads
should be provided for PCB mounting integrity.
RF Input. DC voltage present, blocking capacitor required. Requires external
match for optimal performance.
RF Output. DC Voltage present, blocking cap required. Requires external
match for optimal performance.
Reference current into internal active bias current mirror. Current into Iref sets
device quiescent current. Also, can be used as on/off control.
Multiple Vias should be employed to minimize inductance and thermal
resistance. Use recommended via pattern shown under mounting configuration
and ensure good solder attach for optimum thermal and electrical performance
15 of 17
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TQP7M9104
2W High-Linearity Amplifier
®
Package Marking and Dimensions
Marking: Part Identifier – 7M9104
Date Code – YYMM
Lot code – AaXXXX
6
4.000
24X 0.50 Pitch
24X 0.25±0.05
TERMINAL #1
IDENTIFIER
7M9104
YYMM
AaXXXX
4.000
2.70±0.05
Exp. DAP
6
Pin #1 IDENTIFIER
CHAMFER 0.300 x 45°
4
24X 0.40±0.05
2.50 Ref.
R.075
5
2.70±0.05
Exp. DAP
GND/THERMAL PAD
.10 C
24X
.850±0.050
.08 C
5
SEATING PLANE
0.000
0.050
.203 Ref.
C
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Except where noted, this part outline conforms to JEDEC standard MO-220, Issue E (Variation VGGC) for thermally enhanced
plastic very thin fine pitch quad flat no lead package (QFN).
3. Dimension and tolerance formats conform to ASME Y14.4M-1994.
4. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
5. Co-planarity applies to the exposed ground/thermal pad as well as the contact pins.
6. Package body length/width does not include plastic flash protrusion across mold parting line.
PCB Mounting Pattern
3
PACKAGE
OUTLINE
16X
0.50 PITCH
R.19
24X 0.38
0.19
1
(SOLDER MASK)
MINIMUM BACKSIDE THERMAL
CONTACT AREA
6
1
24X 0.70
2.70
2.70
0.64
0.64
2.70
BACK SIDE
COMPONENT SIDE
Notes:
1. All dimensions are in millimeters. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend
a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
5. Place mounting screws near the part to fasten a back side heat sink.
6. Do not apply solder mask to the back side of the PC board in the heat sink contact region.
7. Ensure that the backside via region makes good physical contact with the heat sink.
Data Sheet, June 30, 2017 | Subject to change without notice
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TQP7M9104
2W High-Linearity Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
Class 1C
ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM)
Class C3
JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level
Level 1
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Annealed Matte Tin over Copper
RoHS Compliance
This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:
Product uses RoHS Exemption 7c-I to meet RoHS Compliance requirements.
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
For technical questions and application information: Email: appsupport@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2016 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Data Sheet, June 30, 2017 | Subject to change without notice
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