TQP7M9105
1W High Linearity Amplifier
®
Product Overview
The TQP7M9105 is a high linearity, high gain 1 W driver
amplifier in industry standard, RoHS compliant, SOT-89
surface mount package. This InGaP / GaAs HBT delivers
high performance across 0.05 to 1.5 GHz while achieving
+47 dBm OIP3 and +30 dBm P1dB at 940 MHz while only
consuming 220 mA quiescent current. All devices are
100% RF and DC tested.
The TQP7M9105 incorporates on-chip features that
differentiate it from other products in the market. The
amplifier has a dynamic active bias circuit that enable
stable operation over bias and temperature variations and
can provide a high linearity at back-off operation
The TQP7M9105 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. The device an excellent
candidate for transceiver line cards and high power
amplifiers in current and next generation multi-carrier
3G / 4G base stations.
Functional Block Diagram
3-pin SOT−89 Package
Key Features
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
•
GND
4
50 – 1500 MHz
+30 dBm P1dB at 940 MHz
+47 dBm Output IP3 at 940 MHz
19.5 dB Gain at 940 MHz
+5 V Single Supply, 220 mA Current
Internal RF Overdrive Protection
Internal DC Overvoltage Protection
On Chip ESD Protection
SOT-89 Package
Repeaters
BTS Transceivers
BTS High Power Amplifiers
CDMA / WCDMA / LTE
General Purpose Wireless
• ISM Equipment
1
2
3
RF IN
GND
RF OUT
Top View
Ordering Information
Part No.
Description
TQP7M9105
TQP7M9105-PCB900
1 W High Linearity Amplifier
920 – 960 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Datasheet, March 5, 2020 | Subject to change without notice
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TQP7M9105
1W High Linearity Amplifier
®
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50 Ω, T=+25 °C
Device Voltage (VCC)
Recommended Operating Conditions
Parameter
Rating
−65 to 150 °C
+30 dBm
+8 V
Device Voltage (VCC)
TCASE
Tj for >106 hours MTTF
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Min
Typ
Max Units
+5.0
+5.25
+105
+170
−40
V
°C
°C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC = +5.0 V, Temp= +25 °C
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
WCDMA Output Power
Noise Figure
Quiescent Current, ICQ
Thermal Resistance, θjc
Conditions
Min
Typ
50
17.5
Pout = +15 dBm/tone, ∆f = 1 MHz
−50 dBc ACLR (1)
+28.7
+43.5
195
Module (junction to case)
Max Units
1500
940
19.4
14
15
+30
+47
+20.5
6.3
220
27.3
20.5
245
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
°C/W
Notes:
ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
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TQP7M9105
1W High Linearity Amplifier
®
Device Characterization Data
25
Gain (dB)
Input reflection coefficients
Gain & Max Stable Gain
30
Output reflection coefficients
1
Gain
Gmax
20
15
1
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
-1
-0.75 -0.5 -0.25
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
0.25
0.5
0.75
1
-1
-0.75
-0.5
-0.25
0
-0.2
-0.2
-0.4
-0.4
-0.6
-0.6
-0.8
-0.8
-1
-1
0.25
0.5
0.75
1
Frequency (GHz)
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in black color, [gain (S(21)]. For a tuned circuit for a particular
frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown as the blue trace [Gmax].
The impedance plots are shown from 0.01– 4 GHz.
S-Parameters
Test Conditions: VCC=+5 V, ICQ=220 mA, T=+25°C, unmatched 50 ohm system, calibrated to device leads
Freq (GHz)
0.05
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
S11 (dB)
−1.06
−1.08
−1.01
−0.75
−0.57
−0.51
−0.51
−0.54
−0.57
−0.62
−0.66
−0.60
−0.56
−0.75
−0.58
−0.55
−0.64
−0.69
−0.84
−0.93
−0.85
−0.80
S11 (ang)
−178.68
−179.98
179.18
176.01
171.34
166.55
163.55
161.26
157.96
154.88
150.04
144.26
139.27
135.92
132.79
132.30
129.89
126.19
121.41
115.44
110.18
106.76
Datasheet, March 5, 2020 | Subject to change without notice
S21 (dB)
17.88
16.04
15.20
14.04
12.73
11.29
10.11
8.87
7.85
7.10
6.35
5.75
4.95
3.91
3.16
2.52
2.01
1.69
1.48
1.06
0.51
−0.04
S21 (ang)
154.59
154.96
150.91
134.55
120.33
108.35
98.59
90.63
82.50
75.78
67.47
59.82
51.93
45.80
40.57
36.55
31.75
26.65
20.86
12.97
5.81
−0.51
3 of 13
S12 (dB)
−36.95
−37.20
−37.52
−36.48
−35.65
−35.14
−34.89
−34.56
−34.07
−33.47
−33.19
−32.84
−32.47
−32.62
−32.36
−32.25
−31.94
−31.44
−30.84
−30.84
−30.20
−30.40
S12 (ang)
1.89
3.77
7.85
11.27
11.92
9.35
11.74
11.00
10.99
10.29
11.13
4.95
3.98
1.55
2.07
2.62
0.51
1.40
−2.57
−4.71
−10.30
−11.85
S22 (dB)
−3.39
−3.00
−2.91
−2.73
−2.52
−2.51
−2.50
−2.52
−2.61
−2.57
−2.66
−2.64
−2.59
−2.57
−2.28
−2.33
−2.37
−2.40
−2.54
−2.68
−2.63
−2.51
S22 (ang)
−171.92
−176.29
−179.66
176.91
173.48
169.15
165.78
163.07
160.70
158.17
155.39
151.03
146.61
141.55
139.39
138.20
136.78
135.83
133.06
126.60
119.65
114.02
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TQP7M9105
1W High Linearity Amplifier
®
Evaluation Board 615 – 655 MHz Reference Design
J4
C7
J3
J3 +5V
0.1 uF
C6
J4 GND
C7
C6
L1
L2
C5
C3
C1
1000 pF
L3
U1
L3
12 nH
C2
J1
C1
L1
TQP7M9103
RF
Input
100 pF
C3
2.2 nH
C2
L2
U1
1
2,4
3
3.3 nH
C5 100 pF
J2
RF
Output
10 pF
15 pF
Notes:
1.
2.
3.
4.
5.
Components shown on the silkscreen but not on the schematic are not used.
0 Ω resistor can be replaced with copper trace in the target application layout.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
• Distance between U1 Pin 1 Pad left edge to L1 (right edge): 100 mil
• Distance between U1 Pin 1 Pad left edge to C3 (right edge): 200 mil
• Distance between U1 Pin 3 Pad right edge to C5 (left edge): 210 mil
• Distance between U1 Pin 3 Pad right edge to L2 (left edge): 120 mil
Bill of Material 615 – 655 MHz
Reference Des.
n/a
Value
Description
Manuf.
Part Number
n/a
Printed Circuit Board
Qorvo
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9105
C3
15 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U150J
C5
10 pF
CAP, 0603, ± 0.05 pF, 50V, NPO
AVX
06032U100J
C1, C2
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C6
1000 pF
CAP, chip
various
C7
0.1 uF
CAP, 0603, 10%, X5R , 10V
various
L1
2.2 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL2N2S
L2
3.3 nH
IND, 0603, +/-0.3nH
TOKO
LL1608-FSL3N3S
L3
12 nH
IND, 0805, 5%, Wirewound
Coilcraft
0805CS-120XJL
Datasheet, March 5, 2020 | Subject to change without notice
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TQP7M9105
1W High Linearity Amplifier
®
Typical Performance 615 – 655 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Parameter
Conditions
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3
WCDMA Channel Power (1)
Typical Value
617
21.6
10.5
17
+30.3
+44.7
+18
Pout = +16 dBm / tone, Δf =1 MHz
ACLR = −50 dBc
635
21.6
11
16.5
+30.5
+43.8
+17.5
Units
652
21.6
11
17.5
+30.8
+42.7
+16.8
MHz
dB
dB
dB
dBm
dBm
dBm
Notes:
1. 1C 20MHz LTE signal, PAR=9.5dB
Performance Plots 615 – 655 MHz
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
23
Return Loss vs. Frequency
0
OIP3 vs. Pout/tone
55
22
51
21
20
OIP3 (dBm)
|S11| & |S22| (dB)
Gain (dB)
-5
-10
47
43
Input Return Loss
-15
Output Return Loss
19
39
617 MHz
635 MHz
652 MHz
18
-20
600
610
620
630
640
650
660
670
35
600
610
620
Frequency (MHz)
630
640
650
660
670
Frequency (MHz)
12
13
14
15
16
17
Pout/Tone (dBm)
ACPR vs Pout
-35
1C 20MHz LTE signal, PAR = 9.5dB
ACPR (dBc)
-40
-45
-50
-55
617 MHz
635 MHz
652 MHz
-60
12
13
14
15
16
17
18
19
20
21
22
Pout (dBm)
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TQP7M9105
1W High Linearity Amplifier
®
Evaluation Board – TQP7M9105-PCB900 (860 – 960 MHz)
C5
J4
1.0uF
J3
C5
C4
C4
J3 Vcc
0.1uF
C3
C3
J4 GND
L1
U1
L2
C8
R1
C7
C6
C1
1000pF
C2
L1
10nH
0805
J1
C1
R1
L2
U1
1
TQP7M9105
RF
Input
3.3pF
1
C6
4.7pF
2,4
C2
3
2.2nH
C7
C8
1.5pF
4.7pF
Notes:
• See Evaluation Board PCB Information section for PCB material and stack-up.
• Components shown on the silkscreen but not on the schematic are not used.
• The recommended component values are dependent upon the frequency of operation.
• All components are of 0603 size unless stated on the schematic.
• Critical component placement locations:
Distance from U1 Pin 1 Pad (left edge) to R1 (right edge): 100 Mils (4.85° at 940 MHz)
Distance from U1 Pin 1 Pad (left edge) to C6 (right edge): 270 Mils (13.1° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to C7 (left edge): 40 Mils (1.94° at 940 MHz)
Distance from U1 Pin 3 Pad (right edge) to L2 (left edge): 120 Mils (5.82° at 940 MHz)
• Distance from U1 Pin 3 Pad (right edge) to C8 (left edge): 260 Mils (12.6° at 940 MHz)
Bill of Material TQP7M9105-PCB900
Reference Des.
Value
Description
Manuf.
n/a
U1
C1
C2
n/a
n/a
3.3 pF
100 pF
Printed Circuit Board
TQP7M9105 Amplifier, SOT-89 pkg.
Cap., Chip, 0603, ±0.1 pF, 50 V, Accu-P
Cap., Chip, 0603, 5%, 50 V, NPO/COG
Qorvo
Qorvo
AVX
various
C3
C4
C5
C7
C6, C8
L1
1000 pF
0.1 μF
1.0 μF
1.5 pF
4.7 pF
10 nH
Cap., Chip, 0603, 5%, 50 V, NPO/COG
Cap., Chip, 0603, 10%, 16 V, X7R
Cap., Chip, 0603, 10%, 10 V, X5R
Cap., Chip, 0603, ±0.05 pF, 50 V, Accu-P
Cap., Chip, 0603, ±0.05 pF, 50 V, Accu-P
Inductor, 0805, 5%, Coilcraft CS Series
various
various
various
AVX
AVX
Coilcraft
Inductor, 0603, ±0.3 nH
Resistor, Chip, 0603, 5%, 1/16 W
Toko
various
L2
R1
2.2 nH
1 Ω
Datasheet, March 5, 2020 | Subject to change without notice
6 of 13
J2
100pF RF
Output
Part Number
06035J3R3ABSTR
06035J1R5ABSTR
06035J4R7ABSTR
0805CS-100XJLB
LL1608-FSL2N2S
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TQP7M9105
1W High Linearity Amplifier
®
Typical Performance 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 220 mA, Temp. = +25 °C
Parameter
Units
Typical Value
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (1)
WCDMA Channel Power (2,3)
Noise figure
860
18.9
7.9
16.2
+29
+48
20
6.8
880
19.2
9.5
16.7
+29.2
+50.2
20.2
6.6
900
19.3
11.3
16.8
+29.5
+50.6
20.5
6.4
920
19.4
13
15
+29.9
+49.5
+20.5
6.4
940
19.4
14
15
+30.0
+49.2
+20.5
6.4
960
19.3
13
14
+29.8
+49
+20.5
6.3
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Notes:
1. +15 dBm/tone, ∆f = 1 MHz
2. At −50 dBc ACLR
3. 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
RF Performance Plots 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
Gain vs. Frequency
22
0
Input Return Loss vs. Frequency
Return Loss (dB)
Gain (dB)
21
20
19
- 40°C
+25°C
+85°C
18
17
0.86
0.88
0.90
0.92
0.94
0.96
- 40°C
+25°C
+85°C
-5
-10
-15
-20
0.86
0.88
Frequency (GHz)
Return Loss (dB)
0
0.90
0.92
0.94
0.96
Frequency (GHz)
Output Return Loss vs. Frequency
-5
- 40°C
+25°C
+85°C
-10
-15
-20
0.86
0.88
0.90
0.92
0.94
0.96
Frequency (GHz)
Datasheet, March 5, 2020 | Subject to change without notice
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TQP7M9105
1W High Linearity Amplifier
®
Performance Plots 860 – 960 MHz (TQP7M9105-PCB900)
Test conditions unless otherwise noted: VC C= +5 V, ICQ = 235 mA, Temp. = +25 °C
ACLR vs. Output Power vs. Frequency
-45
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7dB @ 0.01% Probability
3.84 MHz BW
-50
-50
ACLR (dBm)
ACLR (dBm)
ACLR vs. Output Power at 940MHz
-45
Temp.=+25oC
-55
860 MHz
880 MHz
900 MHz
920 MHz
940 MHz
960 MHz
-60
Frequency : 940 MHz
-55
-60
-65
-65
16
17
18
19
20
21
16
17
18
Output Power (dBm)
Temp.=+25oC
19
20
OIP3 vs. Output Power at 940MHz
55
1MHz Tone Spacing
1MHz Tone Spacing
50
OIP3 (dBm)
50
45
860 MHz
880 MHz
900 MHz
920 MHz
940 MHz
960 MHz
40
35
45
40
- 40 °C
+25°C
+85 °C
35
30
30
12
13
14
15
16
17
18
12
13
Output Power / Tone(dBm)
14
15
16
17
18
Output Power / Tone(dBm)
P1dB vs. Temperature
33
Icc vs. Output Power
600
Temp.=+25oC
Frequency : 940 MHz CW Signal
500
31
400
29
Icc (mA)
P1dB (dBm)
21
Output Power (dBm)
OIP3 vs. Output Power vs. Frequency
55
OIP3 (dBm)
- 40 °C
+25°C
+85 °C
300
27
+85°C
+25°C
−40°C
25
200
100
23
0
860
880
900
920
940
960
21
Frequency (MHz)
Datasheet, March 5, 2020 | Subject to change without notice
23
25
27
29
31
Output Power (dBm)
8 of 13
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TQP7M9105
1W High Linearity Amplifier
®
Evaluation Board 700 – 1000 MHz Reference Design
C9
J4
J3
1.0uF
C8
C9
J3 Vcc
C8
0.1uF
C7
C7
J4 GND
L1
U1
R1
C4
C2
C5
C1
J1
C6
J2
22pF
L1
18nH
J1
C5
R1
1
U1
TQP7M9105
RF
Input
100pF
2.4
C1
C2
3.9pF
5.6pF
2,4
C6
3
C4
J2
100pF RF
Output
5.6pF
Notes:
6.
7.
8.
9.
Components shown on the silkscreen but not on the schematic are not used.
All components are of 0603 size unless stated on the schematic.
The recommended component values are dependent upon the frequency of operation.
Critical component placement locations:
• Distance between U1 Pin 1 Pad to R1 (right edge): 45 mil
• Distance between U1 Pin 1 Pad to C1 (right edge): 370 mil
• Distance between U1 Pin 1 Pad to C2 (right edge): 195 mil
• Distance between U1 Pin 3 Pad to C4 (left edge): 395 mil
Bill of Material 700 – 1000 MHz
Reference Des.
Value
Description
Manuf.
Part Number
n/a
n/a
Printed Circuit Board
Qorvo
1100415
U1
n/a
1 W High Linearity Amplifier
Qorvo
TQP7M9105
C1
3.9 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06035J3R9ABSTR
C2, C4
5.6 pF
CAP, 0603, ± 0.1 pF, 100V, NPO/COG
AVX
06035J5R6ABSTR
C5, C6
100 pF
CAP, 0603, 5%, 50V, NPO/COG
various
C7
22 pF
CAP, 0603, 5%, 50V, NPO/COG
Various
C8
0.1 uF
CAP, 0603, 5%, 50V, NPO/COG
various
C9
1.0 uF
CAP, 0603, 10%, X5R , 10V
various
R1
2.4 Ω
RES, 0603, 5%, 1/16W, Chip
various
L1
18 nH
IND, 0805, 5%, Ceramic
Coilcraft
Datasheet, March 5, 2020 | Subject to change without notice
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0805CS-180XJL
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TQP7M9105
1W High Linearity Amplifier
®
Typical Performance 700 – 1000 MHz
Test Conditions: VCC=+5 V, Temp.=+25°C, 50Ω System
Parameter
Typical Value
Conditions
Units
Frequency
700
800
900
1000
MHz
Gain
17.2
17.9
18
16.9
dB
Input Return Loss
7.7
13.3
15.3
7.8
dB
Output Return Loss
Output P1dB
Pout= +15 dBm/tone, f= 1 MHz
Output IP3
8.5
10.9
14
15.7
dB
+28.5
+29.5
+30.5
+30.5
dBm
+45
+47
+44
+42.6
dBm
Quiescent Collector Current, ICQ
225
mA
Performance Plots 700 – 1000 MHz
Gain vs. Frequency
20
Return Loss vs. Frequency
0
OIP3 vs Pout/tone
55
19
18
17
50
OIP3 (dBm)
Return Loss (dB)
Gain (dB)
-5
-10
-15
45
700 MHz
40
16
800 MHz
900 MHz
Input Return Loss
1000 MHz
Output return Loss
15
-20
700
800
900
1000
Frequency (MHz)
Datasheet, March 5, 2020 | Subject to change without notice
35
700
800
900
Frequency (MHz)
10 of 13
1000
9
10
11
12
13
14
15
16
17
18
19
Pout/tone (dBm)
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TQP7M9105
1W High Linearity Amplifier
®
Pin Configuration and Description
GND
4
1
2
3
RF IN
GND
RF OUT
Pin No. Label
Description
1
2, 4
RF IN
GND
RF Input. Requires external match for optimal performance. External DC Block required.
RF/DC Ground Connection
3
RF OUT
RF Output and VCC. Requires external match for optimal performance. External DC Block,
RF choke and supply voltage is required.
Evaluation Board PCB Information
Qorvo PCB 1080068 Material and Stack-up
1 oz. Cu top layer
0.014"
Nelco N-4000-13
1 oz. Cu inner layer
0.062" ± 0.006"
Finished Board
Thickness
Core
1 oz. Cu inner layer
0.014"
Nelco N-4000-13
1 oz. Cu bottom layer
50 ohm line dimensions: width = .028”, spacing = .028”.
Datasheet, March 5, 2020 | Subject to change without notice
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TQP7M9105
1W High Linearity Amplifier
®
Package Marking and Dimensions
Marking:
Part Number – 7M9105
Trace Code – XXXX
7M9105
XXXX
Notes:
1. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012.
2. Trace code up to 4 characters assigned by subcontractor.
3. Contact plating: Annealed Matte Tin
PCB Mounting Pattern
3.86 [0.152]
29X
3
1.26 [0.050]
0.63 [0.025]
0.76 [0.030]
4.50 [0.177]
Ø.254 (.010) PLATED THRU VIA HOLES
PACKAGE OUTLINE
2X 1.27 [0.050]
2X 0.58 [0.023]
2.65 [0.104]
2X 0.86 [0.034]
0.64 [0.025]
0.86 [0.034]
3.86 [0.152]
NOTES:
1. All dimensions are in millimeters [inches]. Angles are in degrees.
2. Use 1 oz. copper minimum for top and bottom layer metal.
3. Via holes are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We
recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25mm (0.10”).
4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.
Datasheet, March 5, 2020 | Subject to change without notice
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TQP7M9105
1W High Linearity Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
2
ESDA / JEDEC JS-001-2012
ESD – Charged Device Model (CDM)
C3
JEDEC JESD22-C101F
MSL – Moisture Sensitivity Level
Level 1
IPC/JEDEC J-STD-020
Caution!
ESD-Sensitive Device
Solderability
Compatible with both lead-free (260°C max. reflow temp.) and tin/lead (245°C max. reflow temp.) soldering processes.
Solder profiles available upon request.
Contact plating: Annealed Matte Tin
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and
Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
Pb
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.
Datasheet, March 5, 2020 | Subject to change without notice
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