UF3N170400B7S

1700V-400mW SiC Normally-on JFET Rev. B, September 2021 DATASHEET Description UF3N170400B7S UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. Features D (Tab) Tab w Typical on-resistance RDS(on),typ of 400mW w Voltage controlled G (1) 1 w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature KS (2) 7 w Low gate charge S (3-7) w Low intrinsic capacitance w RoHS compliant Typical applications w Over Current Protection Circuits Part Number UF3N170400B7S Package 2 D PAK-7L Marking UF3N170400B7S w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3N170400B7S Rev. B, September 2021 1 Maximum Ratings Parameter Symbol Test Conditions Value Units AC 1 TC = 25°C TC = 100°C TC = 25°C TC = 25°C 1700 -20 to +3 -30 to +20 6.8 5.1 16 68 175 -55 to 175 V V V A A A W °C °C reflow MSL 1 245 °C VDS Drain-source voltage VGS Gate-source voltage Continuous drain current 2 ID Pulsed drain current 3 Power dissipation Maximum junction temperature Operating and storage temperature IDM Ptot TJ,max TJ,TSTG Reflow soldering temperature Tsolder DC 1. +20V AC rating applies for turn-on pulses 1W. 2. Limited by TJ,max 3. Pulse width tp limited by TJ,max Thermal Characteristics Parameter Thermal resistance, junction-to-case Datasheet: UF3N170400B7S Symbol Test Conditions RqJC Rev. B, September 2021 Value Min Typ Max 1.7 2.2 Units °C/W 2 Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Datasheet: UF3N170400B7S Symbol Test Conditions BVDS VGS=-20V, ID=0.3mA IDSS IGSS RDS(on) VG(th) RG Value Min Typ 1700 2.2 VDS=1700V, VGS=-20V, TJ=175°C 9 VGS=-20V, TJ=25°C 0.15 VGS=-20V, TJ=175°C 0.8 VGS=2V, ID=5A, TJ=25°C 350 f=1MHz, open drain Rev. B, September 2021 Units V VDS=1700V, VGS=-20V, TJ=25°C VGS=0V, ID=5A, TJ=25°C VGS=2V, ID=5A, TJ=175°C VGS=0V, ID=5A, TJ=175°C VDS=5V, ID=4.5mA Max 60 mA 400 6 mA mA 500 mW 928 1040 -11.3 -9 5 -6.7 V W 3 Typical Performance - Dynamic Parameter Value Symbol Test Conditions Ciss Coss Crss VDS=100V, VGS=-20V f=100kHz 225 22 18 pF Coss(er) VDS=0V to 1200V, VGS=-20V 11.4 pF COSS stored energy Eoss VDS=1200V, VGS=-20V 8.2 mJ Total gate charge Gate-drain charge Gate-source charge QG QGD QGS VDS=1200V, ID=5A, VGS = -18V to 0V 30 17 5 nC Turn-on delay time td(on) Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Rise time Turn-off delay time Fall time tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time ETOTAL td(on) tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Datasheet: UF3N170400B7S ETOTAL Min Typ Max Units 5 VDS=1200V, ID=5A, Gate Driver =-18V to 0V, RG=1W, Inductive Load, FWD: 2x UJ3D1210TS in series TJ=25°C 19 9 ns 37 125 38 mJ 163 5 VDS=1200V, ID=5A, Gate Driver =-18V to 0V, RG=1W, Inductive Load, FWD: 2x UJ3D1210TS in series, TJ=150°C 16 8 ns 34 114 31 mJ 145 Rev. B, September 2021 4 10 10 9 9 8 8 Drain Current, ID (A) Drain Current, ID (A) Typical Performance Diagrams 7 6 Vgs = 2V Vgs = 0V Vgs = -2V Vgs = -4V Vgs = -5V Vgs = -6V 5 4 3 2 1 6 Vgs = 2V Vgs = 0V Vgs = -2V Vgs = -4V Vgs = -6V Vgs = -7V 5 4 3 2 1 0 0 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 1. Typical output characteristics at TJ = - 55°C, tp < 250ms 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 2. Typical output characteristics at TJ = 25°C, tp < 250ms 10 1.E-03 8 7 6 5 4 Drain Leakage Current, ID (A) Vgs = 2V Vgs = 0V Vgs = -2V Vgs = -4V Vgs = -6V Vgs = -7V Vgs = -8V 9 Drain Current, ID (A) 7 3 2 1 Tj = 175°C 1.E-04 Tj = 125°C Tj = 25°C 1.E-05 Tj = -55°C 1.E-06 1.E-07 1.E-08 0 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) Figure 3. Typical output characteristics at TJ = 175°C, tp < 250ms Datasheet: UF3N170400B7S 500 10 700 900 1100 1300 1500 1700 Drain-Source Voltage, VDS (V) Figure 4. Typical drain-source leakage at VGS = -20V Rev. B, September 2021 5 8 7 100 Drain Current, ID (A) Capacitance, C (pF) Ciss Coss 10 Crss 6 5 4 Tj = -55°C 3 Tj = 25°C 2 Tj = 125°C 1 1 0 500 1000 1500 Drain-Source Voltage, VDS (V) 0 2000 Figure 5. Typical capacitances at f = 100kHz and VGS = -20V -10 -8 -6 -4 -2 0 Gate-Source Voltage, VGS (V) 1.6 Tj = 175°C Tj = 125°C Tj = 25°C Tj = -55°C 1.4 On-Resistance, RDS(on) (W) 2.5 2.0 1.5 1.0 0.5 0.0 2 Figure 6. Typical transfer characteristics at VDS = 5V 3.0 On Resistance, RDS_ON (P.U.) Tj = 175°C 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 7. Normalized on-resistance vs. temperature at VGS = 0V and ID = 5A Datasheet: UF3N170400B7S 0 1 2 3 4 5 6 7 Drain Current, ID (A) 8 9 10 Figure 8. Typical drain-source on-resistances at VGS = 0V Rev. B, September 2021 6 16 -2 14 12 -4 EOSS (mJ) Threshold Voltage, Vth (V) 0 -6 -8 10 8 6 -10 4 -12 2 -14 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 9. Threshold voltage vs. junction temperature at VDS = 5V and ID = 4.5mA 0 500 1000 1500 Drain-Source Voltage, VDS (V) 2000 Figure 10. Typical stored energy in COSS at VGS = -20V 70 10 60 Drain Current, ID (A) Power Dissipation, Ptot (W) 80 50 40 30 20 10 0 -75 -50 -25 0 25 50 75 100 125 150 175 10ms 1 100ms 0.1 Datasheet: UF3N170400B7S DC 1ms 10ms 0.01 1 Case Temperature, TC (°C) Figure 11. Total power Dissipation 1ms 10 100 1000 Drain-Source Voltage, VDS (V) Figure 12. Safe operation area at TC =25°C, Parameter tp Rev. B, September 2021 7 1.0 Tj = 175°C Tj = 125°C Tj = 25°C Tj = -55°C 1.E-06 Tj = 175°C Tj = 125°C 0.8 Gate Current, IG (A) Gate Current, IG (A) 1.E-05 1.E-07 1.E-08 Tj = 25°C Tj = -55°C 0.6 0.4 0.2 0.0 -20 -15 -10 -5 Gate-Source Voltage, VGS (V) 0 Figure 13. Typical gate leakage at VDS = 0V 0 1 2 3 4 Gate-Source Voltage, VGS (V) 5 Figure 14. Typical gate forward current at VDS = 0V 1 0.1 0.01 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Pulse Time, tp (s) Figure 15. Maximum transient thermal impedance Datasheet: UF3N170400B7S Gate-Source Voltage, VGS (V) Thermal Impedance, ZqJC (°C/W) 5 0 -5 -10 -15 -20 0 10 20 30 40 Gate Charge, QG (nC) Figure 16. Typical gate charge at VDS = 1200V and ID = 5A Rev. B, September 2021 8 350 VDS = 1200V, VGS = -18V/0V RG = 1W, FWD: 2x UJ3D1210TS in series 250 200 Etot Eon Eoff 150 100 50 250 200 150 VDS = 1200V, VGS = -18V/0V ID = 5A, TJ =25°C FWD: 2x UJ3D1210TS in series 100 50 0 0 0 1 2 3 4 5 Drain Current, ID (A) 6 7 200 0 8 Figure 17. Clamped inductive switching energy vs. drain current at TJ = 25°C 5 10 15 Gate Resistor RG (W) 20 25 Figure 18. Clamped inductive switching energy vs. gate resistor RG Etot Eon Eoff 175 Switching Energy (mJ) Etot Eon Eoff 300 Switching Energy (mJ) Switching Energy (mJ) 300 150 125 100 VGS = -18V/0V, RG = 1W, FWD: 2x UJ3D1210TS in series 75 50 25 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 19. Clamped inductive switching energy vs. junction temperature at VDS = 1200V and ID = 5A Datasheet: UF3N170400B7S Rev. B, September 2021 9 Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. Datasheet: UF3N170400B7S Rev. B, September 2021 10