UF3SC065007K4S

650V-6.7mW SiC FET Rev. B, December 2019 DATASHEET Description UF3SC065007K4S CASE This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive. CASE D (1) Features w Typical on-resistance RDS(on),typ of 6.7mW w Maximum operating temperature of 175°C G (4) w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance KS (3) w ESD protected, HBM class 2 S (2) 1 2 34 w TO-247-4L package for faster switching, clean gate waveforms Typical applications Part Number Package Marking w EV charging UF3SC065007K4S TO-247-4L UF3SC065007K4S w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3SC065007K4S Rev. B, December 2019 1 Maximum Ratings Parameter Symbol VDS VGS ID IDM EAS Ptot TJ,max TJ, TSTG Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds Test Conditions DC TC < 135°C TC = 25°C L=15mH, IAS =8.6A TC = 25°C TL Value Units 650 -20 to +20 120 550 555 789 175 -55 to 175 V V A A mJ W °C °C 250 °C 1. Limited by bondwires 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Parameter Thermal resistance, junction-to-case Datasheet: UF3SC065007K4S Symbol Test Conditions RqJC Rev. B, December 2019 Value Min Typ Max 0.15 0.19 Units °C/W 2 Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Symbol Test Conditions BVDS VGS=0V, ID=1mA IDSS IGSS RDS(on) VG(th) RG Value Min Typ Max 650 V VDS=650V, VGS=0V, TJ=25°C 7 VDS=650V, VGS=0V, TJ=175°C 70 VDS=0V, TJ=25°C, VGS=-20V / +20V 5 20 VGS=12V, ID=50A, TJ=25°C 6.7 9 VGS=12V, ID=50A, TJ=125°C VGS=12V, ID=50A, TJ=175°C VDS=5V, ID=10mA Units 600 mA mA mW 8.8 11 4 f=1MHz, open drain 4.7 0.8 6 1.5 V W Typical Performance - Reverse Diode Parameter Diode continuous forward current 1 Diode pulse current 2 Forward voltage Test Conditions IS TC < 135°C 120 A IS,pulse TC=25°C 550 A VFSD Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery time trr Datasheet: UF3SC065007K4S Value Symbol Min Typ VGS=0V, IF=80A, TJ=25°C 1.31 VGS=0V, IF=80A, TJ=175°C 1.4 VR=400V, IF=80A, VGS=-5V, RG_EXT=10W di/dt=1400A/ms, TJ=25°C VR=400V, IF=80A, VGS=-5V, RG_EXT=10W di/dt=1400A/ms, TJ=150°C Rev. B, December 2019 Max Units 1.5 V 856 nC 53 ns 865 nC 35 ns 3 Typical Performance - Dynamic Parameter Value Symbol Test Conditions Ciss Coss Crss VDS=100V, VGS=0V f=100kHz 8360 1190 11.3 pF Effective output capacitance, energy related Coss(er) VDS=0V to 400V, VGS=0V 856 pF Effective output capacitance, time related Coss(tr) VDS=0V to 400V, VGS=0V 1806 pF COSS stored energy Eoss VDS=400V, VGS=0V 69 mJ Total gate charge Gate-drain charge Gate-source charge QG QGD QGS VDS=400V, ID=80A, VGS = -5V to 15V 214 28 96 nC Turn-on delay time td(on) Input capacitance Output capacitance Reverse transfer capacitance Rise time Turn-off delay time Fall time tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time ETOTAL td(on) tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Datasheet: UF3SC065007K4S ETOTAL VDS=400V, ID=80A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1.5W, Turn-off RG,EXT=5W Inductive Load, FWD: same device with VGS = -5V, RG = 10W, TJ=25°C VDS=400V, ID=80A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1.5W, Turn-off RG,EXT=5W Inductive Load, FWD: same device with VGS = -5V, RG = 10W, TJ=150°C Rev. B, December 2019 Min Typ Max Units 36 46 72 ns 14 925 83 mJ 1008 38 47 75 ns 14 1081 105 mJ 1186 4 Typical Performance - Dynamic (continued) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Symbol td(on) tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time ETOTAL td(on) tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Datasheet: UF3SC065007K4S ETOTAL Test Conditions Value Min Typ Max Units 36 VDS=400V, ID=80A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1.5W, Turn-off RG,EXT=5W Inductive Load, FWD: UJ3D065030TS TJ=25°C VDS=400V, ID=80A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1.5W, Turn-off RG,EXT=5W Inductive Load, FWD:UJ3D065030TS TJ=150°C Rev. B, December 2019 37 72 ns 14 545 82 mJ 627 34 40 79 ns 14 555 84 mJ 639 5 350 350 300 300 250 Drain Current, ID (A) Drain Current, ID (A) Typical Performance Diagrams Vgs = 15V 200 Vgs = 10V Vgs = 8V 150 Vgs = 7.5V 100 Vgs = 7V Vgs = 6.5V 50 200 Vgs = 15V Vgs = 10V Vgs = 8V Vgs = 7.5V Vgs = 7V Vgs = 6.5V 150 100 50 0 0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 10 Figure 1. Typical output characteristics at TJ = - 55°C, tp < 250ms 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 2. Typical output characteristics at TJ = 25°C, tp < 250ms 350 1.8 On Resistance, RDS_ON (P.U.) 300 Drain Current, ID (A) 250 250 Vgs = 15V Vgs = 10V Vgs = 8V Vgs = 7V Vgs = 6.5V Vgs = 6V Vgs = 5.5V 200 150 100 50 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 1.2 1.0 0.8 0.6 0.4 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 10 Figure 3. Typical output characteristics at TJ = 175°C, tp < 250ms Datasheet: UF3SC065007K4S 1.4 0.2 0 0 1.6 Figure 4. Normalized on-resistance vs. temperature at VGS = 12V and ID = 50A Rev. B, December 2019 6 20 300 16 Drain Current, ID (A) On-Resistance, RDS(on) (mW) Tj = -55°C 250 12 8 Tj = 175°C Tj = 25°C Tj = - 55°C 4 Tj = 175°C 200 150 100 50 0 0 0 50 100 150 200 250 Drain Current, ID (A) 300 350 Figure 5. Typical drain-source on-resistances at VGS = 12V 0 2 3 4 5 6 7 8 Gate-Source Voltage, VGS (V) 9 10 Gate-Source Voltage, VGS (V) 20 5 4 3 2 1 0 -100 1 Figure 6. Typical transfer characteristics at VDS = 5V 6 Threshold Voltage, Vth (V) Tj = 25°C 15 10 5 0 -5 -50 0 50 100 150 Junction Temperature, TJ (°C) Figure 7. Threshold voltage vs. junction temperature at VDS = 5V and ID = 10mA Datasheet: UF3SC065007K4S 0 200 50 100 150 Gate Charge, QG (nC) 200 250 Figure 8. Typical gate charge at VDS = 800V and ID = 80A Rev. B, December 2019 7 0 0 Vgs = - 5V Vgs = -5V Vgs = 5V Vgs = 8V -100 -150 -200 -250 Vgs = 5V Vgs = 8V -100 -150 -200 -250 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 9. 3rd quadrant characteristics at TJ = -55°C -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 10. 3rd quadrant characteristics at TJ = 25°C 0 180 -50 Vgs = - 5V 160 Vgs = 0V 140 Vgs = 5V 120 Vgs = 8V -100 EOSS (mJ) Drain Current, ID (A) Vgs = 0V -50 Vgs = 0V Drain Current, ID (A) Drain Current, ID (A) -50 -150 100 80 60 40 -200 20 0 -250 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) Figure 11. 3rd quadrant characteristics at TJ = 175°C Datasheet: UF3SC065007K4S 0 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 700 Figure 12. Typical stored energy in COSS at VGS = 0V Rev. B, December 2019 8 1.E+05 140 Capacitance, C (pF) DC Drain Current, ID (A) Ciss 1.E+04 Coss 1.E+03 1.E+02 Crss 1.E+01 100 80 60 40 20 0 1.E+00 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) 100 200 300 400 500 600 700 Drain-Source Voltage, VDS (V) Figure 13. Typical capacitances at f = 100kHz and VGS = 0V 900 Figure 14. DC drain current derating 1.E+00 800 Thermal Impedance, ZqJC (°C/W) Power Dissipation, Ptot (W) 120 700 600 500 400 300 200 100 0 1.E-01 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 1.E-02 1.E-03 1.E-04 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 15. Total power dissipation Datasheet: UF3SC065007K4S Pulse Time, tp (s) Figure 16. Maximum transient thermal impedance Rev. B, December 2019 9 1400 Drain Current, ID (A) 100 10ms 100ms 10 1ms 10ms DC 1 Switching Energy (mJ) 1ms 1000 800 600 VDS = 400V, VGS = -5V/15V RG_ON = 1.5W, RG_OFF = 5W FWD: same device with VGS = -5V, RG = 10W 400 200 0 0.1 1 10 100 Drain-Source Voltage, VDS (V) 0 1000 Figure 17. Safe operation area at TC = 25°C, D = 0, Parameter tp 1600 500 1400 450 1200 1000 800 600 VDS = 400V, VGS = -5V/15V ID = 80A, TJ = 25°C FWD: same device with VGS = - 5V, RG = 10W 400 200 20 40 60 80 Drain Current, ID (A) 100 120 Figure 18. Clamped inductive switching energy vs. drain current at TJ = 25°C Turn-Off Energy, EOFF (mJ) Turn-on Energy, EON (mJ) Etot Eon Eoff 1200 VDS = 400V, VGS = -5V/15V ID = 80A, TJ =25°C FWD: same device with VGS = -5V, RG = 10W 400 350 300 250 200 150 100 50 0 0 0 5 10 15 Total External RG, RG,EXT_ON (W) Figure 19. Clamped inductive switching turn-on energy vs. RG,EXT_ON Datasheet: UF3SC065007K4S 0 20 10 20 30 40 Total External RG, RG,EXT_OFF (W) 50 Figure 20. Clamped inductive switching turn-off energy vs. RG,EXT_OFF Rev. B, December 2019 10 1000 900 1200 800 1000 700 Etot Eon Eoff 800 600 Qrr (nC) Switching Energy (mJ) 1400 VGS = -5V/15V, RG_ON = 1.5W, RG_OFF = 5W, FWD: same device with VGS = -5V, RG = 10W 400 200 600 500 400 300 200 100 0 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 21. Clamped inductive switching energy vs. junction temperature at VDS = 400V and ID = 80A 1000 Etot Eon Eoff 500 400 300 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Etot Eon Eoff 800 700 600 25 Figure 22. Reverse recovery charge Qrr vs. junction temperature Switching Energy (mJ) 800 0 900 VDS = 400V, VGS = -5V/15V RG_ON=1.5W, RG_OFF=5W, FWD: UJ3D06530TS 900 Switching Energy (mJ) VDS = 400V, IS = 80A, di/dt = 1400A/ms, VGS = -5V, RG =10W 700 600 500 400 VGS = -5V/15V, RG_ON = 1.5W, RG_OFF = 5W, FWD: UJ3D06530TS 300 200 200 100 100 0 0 0 20 40 60 80 Drain Current, ID (A) 100 120 Figure 23. Clamped inductive switching energy vs. drain current at TJ = 25°C Datasheet: UF3SC065007K4S 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 24. Clamped inductive switching energy vs. junction temperature at VDS = 400V and ID = 80A Rev. B, December 2019 11 Applications Information SiC FETs are enhancement-mode power switches formed by a highvoltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low on-resistance (RDS(on)), output capacitance (Coss), gate charge (QG), and reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC FETs also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the FET is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on SiC FET operation, see www.unitedsic.com. Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. Datasheet: UF3SC065007K4S Rev. B, December 2019 12