UJ3C120070K3S

1200V-70mW SiC FET Rev. B, December 2019 DATASHEET Description UJ3C120070K3S CASE CASE D (2) This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Features w Typical on-resistance RDS(on),typ of 70mW G (1) w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge 1 w Low intrinsic capacitance 2 3 S (3) w ESD protected, HBM class 2 Typical applications Part Number Package Marking UJ3C120070K3S TO-247-3L UJ3C120070K3S w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3C120070K3S Rev. B, December 2019 1 Maximum Ratings Parameter Symbol VDS VGS Drain-source voltage Gate-source voltage Continuous drain current 1 ID Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature IDM EAS Ptot TJ,max TJ, TSTG Max. lead temperature for soldering, 1/8” from case for 5 seconds TL Test Conditions DC TC = 25°C TC = 100°C TC = 25°C L=15mH, IAS =2.8A TC = 25°C Value Units 1200 -25 to +25 34.5 25.5 80 58.5 254.2 175 -55 to 175 V V A A A mJ W °C °C 250 °C 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Parameter Thermal resistance, junction-to-case Datasheet: UJ3C120070K3S Symbol Test Conditions RqJC Rev. B, December 2019 Value Min Typ Max 0.45 0.59 Units °C/W 2 Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Symbol Test Conditions BVDS VGS=0V, ID=1mA IDSS IGSS RDS(on) VG(th) RG Value Min Typ Max 1200 V VDS=1200V, VGS=0V, TJ=25°C 0.5 VDS=1200V, VGS=0V, TJ=175°C 7 VDS=0V, TJ=25°C, VGS=-20V / +20V 6 20 VGS=12V, ID=20A, TJ=25°C 70 90 VGS=12V, ID=20A, TJ=175°C VDS=5V, ID=10mA Units 75 mA mA mW 148 4 f=1MHz, open drain 5 4.5 6 V W Typical Performance - Reverse Diode Parameter Diode continuous forward current 1 Diode pulse current 2 Forward voltage Test Conditions IS TC=25°C 34.5 A IS,pulse TC=25°C 80 A VFSD Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery time trr Datasheet: UJ3C120070K3S Value Symbol Min Typ VGS=0V, IF=10A, TJ=25°C 1.41 VGS=0V, IF=10A, TJ=175°C 1.9 VR=800V, IF=20A, VGS=-5V, RG_EXT=22W di/dt=1150A/ms, TJ=25°C VR=800V, IF=20A, VGS=-5V, RG_EXT=22W di/dt=1150A/ms, TJ=150°C Rev. B, December 2019 Max Units 2 V 125 nC 38 ns 131 nC 38 ns 3 Typical Performance - Dynamic Parameter Value Symbol Test Conditions Ciss Coss Crss VDS=100V, VGS=0V f=100kHz 1500 114 2.1 pF Effective output capacitance, energy related Coss(er) VDS=0V to 800V, VGS=0V 63 pF Effective output capacitance, time related Coss(tr) VDS=0V to 800V, VGS=0V 128 pF COSS stored energy Eoss VDS=800V, VGS=0V 20 mJ Total gate charge Gate-drain charge Gate-source charge QG QGD QGS VDS=800V, ID=20A, VGS = -5V to 15V 46 7 19 nC Turn-on delay time td(on) Input capacitance Output capacitance Reverse transfer capacitance Rise time Turn-off delay time Fall time tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time ETOTAL td(on) tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Datasheet: UJ3C120070K3S ETOTAL VDS=800V, ID=20A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V, RG = 22W, TJ=25°C VDS=800V, ID=20A, Gate Driver =-5V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=22W Inductive Load, FWD: same device with VGS = -5V, RG = 22W, TJ=150°C Rev. B, December 2019 Min Typ Max Units 38 17 58 ns 9 569 37 mJ 606 35 17 59 ns 10 557 43 mJ 600 4 60 60 50 50 Drain Current, ID (A) Drain Current, ID (A) Typical Performance Diagrams 40 Vgs = 15V 30 Vgs = 8V Vgs = 7V 20 Vgs = 6.5V Vgs = 6V 10 Vgs = 15V 30 Vgs = 8V 20 Vgs = 7V Vgs = 6.5V 10 0 Vgs = 6V 0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 10 Figure 1. Typical output characteristics at TJ = - 55°C, tp < 250ms 60 30 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 2. Typical output characteristics at TJ = 25°C, tp < 250ms On Resistance, RDS_ON (P.U.) 40 0 2.5 Vgs = 15V Vgs = 8V Vgs = 7V Vgs = 6V Vgs = 5.5V Vgs = 5V 50 Drain Current, ID (A) 40 20 10 2.0 1.5 1.0 0.5 0.0 0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 Figure 3. Typical output characteristics at TJ = 175°C, tp < 250ms Datasheet: UJ3C120070K3S -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 10 Figure 4. Normalized on-resistance vs. temperature at VGS = 12V and ID = 20A Rev. B, December 2019 5 60 Tj = 175°C Tj = 25°C Tj = - 55°C 250 200 150 100 50 Tj = 25°C Tj = 175°C 40 30 20 10 0 0 0 10 20 30 40 Drain Current, ID (A) 50 60 Figure 5. Typical drain-source on-resistances at VGS = 12V 0 2 3 4 5 6 7 8 Gate-Source Voltage, VGS (V) 9 10 Gate-Source Voltage, VGS (V) 20 5 4 3 2 1 0 -100 1 Figure 6. Typical transfer characteristics at VDS = 5V 6 Threshold Voltage, Vth (V) Tj = -55°C 50 Drain Current, ID (A) On-Resistance, RDS(on) (mW) 300 15 10 5 0 -5 -50 0 50 100 150 Junction Temperature, TJ (°C) Figure 7. Threshold voltage vs. junction temperature at VDS = 5V and ID = 10mA Datasheet: UJ3C120070K3S 0 200 10 20 30 40 Gate Charge, QG (nC) 50 60 Figure 8. Typical gate charge at VDS = 800V and ID = 20A Rev. B, December 2019 6 0 0 Vgs = -5V Vgs = 0V Vgs = 5V -10 Vgs = - 5V -5 Drain Current, ID (A) Drain Current, ID (A) -5 Vgs = 8V -15 -20 -25 Vgs = 0V Vgs = 5V -10 Vgs = 8V -15 -20 -25 -30 -30 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 9. 3rd quadrant characteristics at TJ = -55°C -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 10. 3rd quadrant characteristics at TJ = 25°C 0 40 30 -10 -15 EOSS (mJ) Drain Current, ID (A) -5 Vgs = - 5V 20 Vgs = 0V -20 10 Vgs = 5V -25 Vgs = 8V 0 -30 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) Figure 11. 3rd quadrant characteristics at TJ = 175°C Datasheet: UJ3C120070K3S 0 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) 1200 Figure 12. Typical stored energy in COSS at VGS = 0V Rev. B, December 2019 7 1.E+04 40 35 DC Drain Current, ID (A) Capacitance, C (pF) Ciss 1.E+03 1.E+02 Coss 1.E+01 Crss 30 25 20 15 10 5 0 1.E+00 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) 200 400 600 800 1000 1200 Drain-Source Voltage, VDS (V) Figure 13. Typical capacitances at f = 100kHz and VGS = 0V Figure 14. DC drain current derating 1 Thermal Impedance, ZqJC (°C/W) Power Dissipation, Ptot (W) 300 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 15. Total power dissipation Datasheet: UJ3C120070K3S 0.1 0.01 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Pulse Time, tp (s) Figure 16. Maximum transient thermal impedance Rev. B, December 2019 8 1400 100 10 10ms 100ms 1 Switching Energy (mJ) Drain Current, ID (A) 1ms 1ms DC 1000 800 Etot Eon Eoff 600 400 200 10ms 0 0.1 1 0 10 100 1000 Drain-Source Voltage, VDS (V) Figure 17. Safe operation area at TC = 25°C, D = 0, Parameter tp 700 140 600 120 500 400 300 VDS = 800V, VGS = -5V/15V ID = 20A, TJ = 25°C FWD: same device with VGS = -5V, RG = 22W 200 100 5 10 15 20 25 Drain Current, ID (A) 30 35 Figure 18. Clamped inductive switching energy vs. drain current at TJ = 25°C Turn-Off Energy, EOFF (mJ) Turn-on Energy, EON (mJ) VDS = 800V, VGS = -5V/15V RG_ON = 1W, RG_OFF = 22W FWD: same device with VGS = 5V, RG = 22W 1200 VDS = 800V, VGS = -5V/15V ID = 20A, TJ =25°C FWD: same device with VGS = -5V, RG = 22W 100 80 60 40 20 0 0 0 5 10 15 Total External RG, RG,EXT_ON (W) Figure 19. Clamped inductive switching turn-on energy vs. RG,EXT_ON Datasheet: UJ3C120070K3S 0 20 20 40 60 80 Total External RG, RG,EXT_OFF (W) 100 Figure 20. Clamped inductive switching turn-off energy vs. RG,EXT_OFF Rev. B, December 2019 9 200 600 150 500 Etot Eon Eoff 400 300 Qrr (nC) Switching Energy (mJ) 700 VGS = -5V/15V, RG_ON =1W, RG_OFF = 22W, FWD: same device with VGS = -5V, RG = 22W 200 100 100 VDS = 800V, IS = 20A, di/dt = 1150A/ms, VGS = -5V, RG =22W 50 0 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 21. Clamped inductive switching energy vs. junction temperature at VDS = 800V and ID = 20A 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 22. Reverse recovery charge Qrr vs. junction temperature Applications Information SiC FETs are enhancement-mode power switches formed by a highvoltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low on-resistance (RDS(on)), output capacitance (Coss), gate charge (QG), and reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC FETs also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the FET is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on SiC FET operation, see www.unitedsic.com. Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. Datasheet: UJ3C120070K3S Rev. B, December 2019 10