UJ3N065080K3S

80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet Description CASE D (2) CASE United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. G (1) S (3) 1 2 3 Part Number Package Marking UJ3N065080K3S TO-247-3L UJ3N065080K3S Features Typical Applications w Typical on-resistance RDS(on),typ of 80mW w Over current protection circuits w Voltage controlled Maximum operating temperature of 175°C w DC-AC inverters w w Switch mode power supplies w Extremely fast switching not dependent on temperature w Power factor correction modules w Low gate charge w Motor drives w Low intrinsic capacitance w Induction heating w RoHS compliant Maximum Ratings Parameter Test Conditions Symbol Drain-source voltage VDS Gate-source voltage VGS Value Units 650 V DC -20 to +3 AC (1) -20 to +20 TC = 25°C 32 A TC = 100°C 24 A IDM TC = 25°C 72 A Ptot TC=25°C 190 W TJ,max 175 °C Operating and storage temperature TJ, TSTG -55 to 175 °C Max. lead temperature for soldering, 1/8” from case for 5 seconds TL 250 °C Continuous drain current (2) Pulsed drain current (3) Power dissipation Maximum junction temperature (1) (2) (3) ID V +20V AC rating applies for turn-on pulses 1W. Limited by TJ,max Pulse width tp limited by TJ,max Rev. B, December 2018 1 For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Rev. B, December 2018 Symbol Test Conditions BVDS VGS= - 20V, ID=1mA ID IG RDS(on) Value Min 650 Typ 8 VDS = 650V, VGS = -20V, TJ = 175°C 30 VGS=-20V, Tj=25°C VGS=-20V, Tj=175°C 10 32 VGS=2V, ID=10A, TJ = 25°C 68 VGS=0V, ID=10A, TJ = 25°C 80 VGS=2V, ID=10A, TJ = 175°C 114 VGS=0V, ID=10A, TJ = 175°C 130 VDS = 5V, ID = 20mA RG f = 1MHz, open drain 2 Units V VDS = 650V, VGS = -20V, TJ = 25°C VG(th) Max 60 mA 50 mA 95 mW -14 -11.5 3.7 -6 V W For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet Typical Performance - Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related symbol Test Conditions Ciss Coss Crss VDS = 100V, VGS = -20V, f = 100kHz Coss(er) VDS = 0V to 400V, VGS = -20V Total gate charge Gate-drain charge QG QGD Gate-source charge QGS Turn-on delay time td(on) tr Rise time td(off) Turn-off delay time tf Fall time Turn-on energy EON Turn-off energy EOFF Value Min VDS=400V, ID = 24A, VGS=-18V to 0V Typ 630 94 88 75 43 nC 7 6 25 VDS=400V, ID=24A, Gate Driver =-18V to 0V, RG,EXT = 1W, Inductive Load, FWD: UJ3D06510TS TJ = 25°C 31 149 td(on) 6 tf Fall time Turn-on energy EON Turn-off energy EOFF Total switching energy mJ 183 Turn-on delay time td(off) ns 14 332 Turn-off delay time pF pF ETOTAL tr Units 69 Total switching energy Rise time Max 24 VDS=400V, ID=24A, Gate Driver =-18V to 0V, RG,EXT = 1W, Inductive Load, FWD: UJ3D06510TS TJ = 150°C ns 14 14 134 mJ 103 ETOTAL 237 Thermal Characteristics Parameter Thermal resistance, junction-to-case Rev. B, December 2018 symbol Test Conditions RqJC 3 Value Min Typ 0.61 Max 0.79 Units °C/W For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet 80 80 70 70 60 60 Drain Current, ID (A) Drain Current, ID (A) Typical Performance Diagrams 50 40 Vgs = 2V Vgs = 0V Vgs= - 2V Vgs = -4V Vgs = -6V Vgs = -8V 30 20 10 40 Vgs = 2V Vgs = 0V Vgs= - 2V Vgs = -4V Vgs = -6V Vgs = -8V 30 20 10 0 0 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 0 Figure 1 Typical output characteristics at T J = 55°C 60 30 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 1.E-03 Tj = - 55°C Drain Leakage Current, ID (A) 40 1 Figure 2 Typical output characteristics at T J = 25°C Vgs = 2V Vgs = 0V Vgs= - 2V Vgs = -4V Vgs = -6V Vgs = -8V Vgs = -10V 50 Drain Current, ID (A) 50 20 10 0 Tj = 25°C Tj = 125°C 1.E-04 Tj = 175°C 1.E-05 1.E-06 1.E-07 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 100 Figure 3 Typical output characteristics at T J = 175°C Rev. B, December 2018 200 300 400 500 600 Drain-Source Voltage, VDS (V) Figure 4 Typical drain-source leakage at V GS = -20V 4 For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet 1000 60 Ciss Tj = - 55°C 100 Drain Current, ID (A) Capacitance, C (pF) 50 Coss Crss 10 Tj = 125°C 40 Tj = 175°C 30 20 10 0 0 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) -15 Figure 5 Typical capacitances at 100kHz and V GS = -20V -10 -5 Gate-Source Voltage, VGS (V) 0 Figure 6 Typical transfer characteristics at V DS = 5V 300 On-Resistance, RDS(on) (mW) 2.0 On-Resistance, RDS_ON (P.U.) Tj = 25°C 1.5 1.0 0.5 0.0 Tj = - 55°C Tj = 25°C Tj = 125°C Tj = 175°C 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 0 Figure 7 Normalized on-resistance vs. temperature at V GS = 0V and I D = 10A Rev. B, December 2018 10 20 30 40 Drain Current, ID (A) 50 60 70 Figure 8 Typical drain-source on-resistance at V GS = 0V 5 For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet 0 16 12 -5 EOSS (mJ) Threshold Voltage, VG(th) (V) 14 -10 10 8 6 4 2 -15 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, Tj (°C) 0 Figure 9 Threshold voltage vs. Tj at V DS = 5V and I D = 20mA 700 Figure 10 Typical stored energy in C OSS at V GS = -20V 200 100 1ms 175 150 Drain Current, ID (A) Power Dissipation, Ptot (W) 100 200 300 400 500 600 Drain-Source Voltage, VDS (V) 125 100 75 50 25 0 10ms 100ms 1 DC 1ms 10ms 0.1 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) 1 Figure 11 Total power Dissipation Rev. B, December 2018 10 10 100 1000 Drain-Source Voltage, VDS (V) Figure 12 Safe operation area T c = 25°C, Parameter t p 6 For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet 1.E-04 1.0 Tj = - 55°C Tj = - 55°C Tj = 25°C 0.8 Gate Current, IG (A) Gate Current, IG (A) Tj = 25°C 1.E-05 Tj = 125°C Tj = 175°C 1.E-06 1.E-07 1.E-08 Tj = 125°C Tj = 175°C 0.6 0.4 0.2 0.0 -20 -15 -10 -5 Gate-Source Voltage, VGS (V) 0 0 Figure 13 Typical gate leakage current at V DS = 0V 1 2 3 4 5 Gate-Source Voltage, VGS (V) 6 Figure 14 Typical gate forward current at V DS = 0V 0.1 0.01 Gate-Source Voltage, VGS (V) Thermal Impedance, ZqJC (°C/W) 3 1 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Pulse Time, tp (s) -3 -6 -9 -12 -15 -18 0 Figure 15 Maximum transient thermal impedance Rev. B, December 2018 0 20 40 60 80 Gate Charge, QG (nC) 100 Figure 16 Typical gate charge at V DS = 400V and I D = 24A 7 For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet 600 VDD = 400V, VGS = -18V/0V RG = 1W, FWD: UJ3D06510TS TJ = 150°C 300 Switching Energy (mJ) Switching Energy (mJ) 400 Etot Eon Eoff 200 100 VDD = 400V, VGS = -18V/0V ID =24A, TJ = 150°C FWD: UJ3D06510TS 500 400 300 200 Etot Eon Eoff 100 0 0 0 5 10 15 20 25 Drain Current, ID (A) 30 35 0 Figure 17 Clamped inductive switching energy vs. drain current at T J = 150°C 2 4 6 Gate Resistor, RG (W) 8 10 Figure 18 Clamped inductive switching energy vs. gate resistor R G Switching Energy (mJ) 350 Etot Eon Eoff 300 250 200 150 100 VDD = 400V, VGS = -18V/0V RG = 1W, FWD: UJ3D06510TS 50 0 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 19 Clamped inductive switching energy vs. junction temperature at I D = 24A Rev. B, December 2018 8 For more information go to www.unitedsic.com. 80mW - 650V SiC Normally-On JFET | UJ3N065080K3S Datasheet Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. B, December 2018 9 For more information go to www.unitedsic.com.