UJ3N120065K3S

1200V-66mW SiC Normally-on JFET Rev. A, November 2019 DATASHEET Description UJ3N120065K3S CASE CASE D (2) UnitedSiC offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. Features w Typical on-resistance RDS(on),typ of 66mW w Voltage controlled G (1) w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge S (3) 1 2 3 w Low intrinsic capacitance w RoHS compliant Typical applications w Over Current Protection Circuits Part Number Package Marking UJ3N120065K3S TO-247-3L UJ3N120065K3S w DC-AC Inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3N120065K3S Rev. A, November 2019 1 Maximum Ratings Parameter Symbol Test Conditions VDS Drain-source voltage VGS Gate-source voltage Continuous drain current 2 ID Pulsed drain current 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds IDM Ptot TJ,max TJ,TSTG DC AC 1 TC = 25°C TC = 100°C TC = 25°C TC = 25°C TL Value Units 1200 -20 to +3 -30 to +20 34 25 90 254 175 -55 to 175 V V V A A A W °C °C 250 °C 1. +20V AC rating applies for turn-on pulses 1W. 2. Limited by TJ,max 3. Pulse width tp limited by TJ,max Thermal Characteristics Parameter Thermal resistance, junction-to-case Datasheet: UJ3N120065K3S Symbol Test Conditions RqJC Rev. A, November 2019 Value Min Typ Max 0.45 0.59 Units °C/W 2 Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Datasheet: UJ3N120065K3S Symbol Test Conditions BVDS VGS=-20V, ID=1mA IDSS IGSS RDS(on) VG(th) RG Value Min Typ 1200 5 VDS=1200V, VGS=-20V, TJ=175°C 56 VGS=-20V, TJ=25°C 0.1 VGS=-20V, TJ=175°C 1 VGS=2V, ID=10A, TJ=25°C 55 f=1MHz, open drain Rev. A, November 2019 Units V VDS=1200V, VGS=-20V, TJ=25°C VGS=0V, ID=10A, TJ=25°C VGS=2V, ID=10A, TJ=175°C VGS=0V, ID=10A, TJ=175°C VDS=5V, ID=35mA Max 30 mA 66 50 mA mA 90 mW 122 142 -9.3 -6.6 2.6 -4.7 V W 3 Typical Performance - Dynamic Parameter Value Symbol Test Conditions Ciss Coss Crss VDS=100V, VGS=-20V f=100kHz 1008 100 95 pF Coss(er) VDS=0V to 800V, VGS=-20V 56 pF COSS stored energy Eoss VDS=800V, VGS=-20V 18 mJ Total gate charge Gate-drain charge Gate-source charge QG QGD QGS VDS=800V, ID=25A, VGS = -18V to 0V 114 75 16 nC Turn-on delay time td(on) Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Rise time Turn-off delay time Fall time tr td(off) tf Turn-on energy EON Turn-off energy EOFF Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time VDS=800V, ID=25A, Gate Driver =-18V to 0V, RG=1W, Inductive Load, FWD: UJ2D1215T TJ=25°C 43 19 tf Turn-off energy EOFF VDS=800V, ID=25A, Gate Driver =-18V to 0V, RG=1W, Inductive Load, FWD: UJ2D1215T TJ=150°C ETOTAL ns 785 150 28 td(off) Units 16 td(on) tr Max 32 935 EON Datasheet: UJ3N120065K3S Typ ETOTAL Turn-on energy Total switching energy Min 42 18 mJ ns 15 730 146 mJ 876 Rev. A, November 2019 4 60 60 50 50 Drain Current, ID (A) Drain Current, ID (A) Typical Performance Diagrams 40 Vgs = 2V Vgs = 0V Vgs = -1V Vgs = -2V Vgs = -3V Vgs = -4V 30 20 10 Vgs = 2V Vgs = 0V Vgs = -1V Vgs = -2V Vgs = -3V Vgs = -4V Vgs = -5V 30 20 10 0 0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 10 Figure 1. Typical output characteristics at TJ = - 55°C, tp < 250ms 60 30 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 2. Typical output characteristics at TJ = 25°C, tp < 250ms Tj = 175°C Drain Leakage Current, ID (A) 40 0 1.E-03 Vgs = 2V Vgs = 0V Vgs = -1V Vgs = -2V Vgs = -3V Vgs = -4V Vgs = -5V 50 Drain Current, ID (A) 40 20 10 Tj = 125°C 1.E-04 Tj = 25°C Tj = -55°C 1.E-05 1.E-06 1.E-07 0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 Figure 3. Typical output characteristics at TJ = 175°C, tp < 250ms Datasheet: UJ3N120065K3S 200 10 400 600 800 1000 Drain-Source Voltage, VDS (V) 1200 Figure 4. Typical drain-source leakage at VGS = -20V Rev. A, November 2019 5 60 Ciss 100 Tj = -55°C 50 Drain Current, ID (A) Capacitance, C (pF) 1,000 Coss Crss Tj = 25°C 40 Tj = 125°C Tj = 175°C 30 20 10 10 0 Figure 5. Typical capacitances at f = 100kHz and VGS = -20V -10 2.5 250 2.0 200 1.5 1.0 0.5 -8 -6 -4 -2 Gate-Source Voltage, VGS (V) 0 Figure 6. Typical transfer characteristics at VDS = 5V On-Resistance, RDS(on) (mW) On Resistance, RDS_ON (P.U.) 0 200 400 600 800 1000 1200 Drain-Source Voltage, VDS (V) Tj = 175°C Tj = 125°C Tj = 25°C Tj = -55°C 150 100 50 0.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 7. Normalized on-resistance vs. temperature at VGS = 0V and ID = 10A Datasheet: UJ3N120065K3S 0 10 20 30 40 Drain Current, ID (A) 50 60 Figure 8. Typical drain-source on-resistances at VGS = 0V Rev. A, November 2019 6 0 45 -3 35 30 -6 EOSS (mJ) Threshold Voltage, Vth (V) 40 -9 25 20 15 10 -12 5 -15 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) Figure 9. Threshold voltage vs. junction temperature at VDS = 5V and ID = 35mA 0 1200 Figure 10. Typical stored energy in COSS at VGS = -20V 1.E-05 1.0 Tj = 175°C Tj = 125°C Tj = 25°C Tj = -55°C 1.E-06 Tj = 175°C Tj = 125°C 0.8 Gate Current, IG (A) Gate Current, IG (A) 200 400 600 800 1000 Drain-Source Voltage, VDS (V) 1.E-07 1.E-08 Tj = 25°C Tj = -55°C 0.6 0.4 0.2 1.E-09 0.0 -20 -15 -10 -5 Gate-Source Voltage, VGS (V) Figure 11. Typical gate leakage at VDS = 0V Datasheet: UJ3N120065K3S 0 0 1 2 3 4 Gate-Source Voltage, VGS (V) 5 Figure 12. Typical gate forward current at VDS = 0V Rev. A, November 2019 7 40 250 DC Drain Current, ID (A) Power Dissipation, Ptot (W) 300 200 150 100 35 30 25 20 15 10 50 5 0 0 -75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 Case Temperature, TC (°C) Case Temperature, TC (°C) Figure 13. Total power Dissipation Figure 14. DC drain current derating 1 1ms 10ms 10 100ms 1 DC 1ms 10ms 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Figure 15. Safe operation area at TC =25°C, Parameter tp Datasheet: UJ3N120065K3S Thermal Impedance, ZqJC (°C/W) 100 Drain Current, ID (A) 25 50 75 100 125 150 175 0.1 0.01 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Pulse Time, tp (s) Figure 16. Maximum transient thermal impedance Rev. A, November 2019 8 2500 0 Switching Energy (mJ) Gate-Source Voltage, VGS (V) 3 -3 -6 -9 -12 2000 Etot Eon Eoff 1500 1000 500 -15 -18 0 0 25 50 75 100 Gate Charge, QG (nC) 125 150 Figure 17. Typical gate charge at VDS = 800V and ID = 25A 0 5 10 15 20 25 Drain Current, ID (A) 30 35 40 Figure 18. Clamped inductive switching energy vs. drain current at TJ = 25°C 2500 Switching Energy (mJ) 1000 Switching Energy (mJ) VDS = 800V, VGS = -18V/0V RG = 1W, FWD: UJ2D1215T 750 Etot Eon Eoff 500 VGS = -18V/0V, RG = 1W, FWD: UJ2D1215T 250 VDS = 800V, VGS = -18V/0V ID = 25A, TJ =25°C FWD: UJ2D1215T 2000 1500 Etot Eon Eoff 1000 500 0 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 19. Clamped inductive switching energy vs. junction temperature at VDS = 800V and ID = 25A Datasheet: UJ3N120065K3S 0 2 4 6 Gate Resistor RG (W) 8 10 12 Figure 20. Clamped inductive switching energy vs. gate resistor RG Rev. A, November 2019 9 Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. Datasheet: UJ3N120065K3S Rev. A, November 2019 10