UJ4C075023K3S

750V-23mW SiC FET Rev. B, July 2021 DATASHEET Description UJ4C075023K3S CASE The UJ4C075023K3S is a 750V, 23mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. CASE D (2) Features w On-resistance RDS(on): 23mW (typ) G (1) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 84nC w Low body diode VFSD: 1.23V 1 w Low gate charge: QG = 37.8nC 2 3 S (3) w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Part Number Package Marking UJ4C075023K3S TO-247-3L UJ4C075023K3S Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075023K3S Rev. B, July 2021 1 Maximum Ratings Parameter Symbol Test Conditions VDS Drain-source voltage VGS Gate-source voltage Continuous drain current 1 ID Pulsed drain current 2 Single pulsed avalanche energy 3 SiC FET dv/dt ruggedness Power dissipation Maximum junction temperature Operating and storage temperature IDM EAS dv/dt Ptot TJ,max TJ, TSTG Max. lead temperature for soldering, 1/8” from case for 5 seconds DC AC (f > 1Hz) TC = 25°C TC = 100°C TC = 25°C L=15mH, IAS =3A VDS [ 500V TC = 25°C TL Value Units 750 -20 to +20 -25 to +25 66 49 196 67 150 306 175 -55 to 175 V V V A A A mJ V/ns W °C °C 250 °C 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Thermal Characteristics Parameter Thermal resistance, junction-to-case Datasheet: UJ4C075023K3S Symbol Test Conditions RqJC Rev. B, July 2021 Value Min Typ Max 0.38 0.49 Units °C/W 2 Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Parameter Drain-source breakdown voltage Total drain leakage current Total gate leakage current Drain-source on-resistance Gate threshold voltage Gate resistance Symbol Test Conditions BVDS VGS=0V, ID=1mA IDSS IGSS RDS(on) VG(th) RG Value Min Typ Max 750 V VDS=750V, VGS=0V, TJ=25°C 2 VDS=750V, VGS=0V, TJ=175°C 15 VDS=0V, TJ=25°C, VGS=-20V / +20V 6 20 VGS=12V, ID=40A, TJ=25°C 23 29 VGS=12V, ID=40A, TJ=125°C VGS=12V, ID=40A, TJ=175°C VDS=5V, ID=10mA Units 30 mA mA mW 39 50 4 f=1MHz, open drain 4.8 4.5 6 V W Typical Performance - Reverse Diode Parameter Diode continuous forward current 1 Diode pulse current 2 Forward voltage Test Conditions IS TC = 25°C 66 A IS,pulse TC = 25°C 196 A VFSD Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery time trr Datasheet: UJ4C075023K3S Value Symbol VGS=0V, IS=20A, TJ=25°C VGS=0V, IS=20A, TJ=175°C VR=400V, IS=40A, VGS=0V, RG_EXT=5W di/dt=1500A/ms, TJ=25°C VR=400V, IS=40A, VGS=0V, RG_EXT=5W di/dt=1500A/ms, TJ=150°C Rev. B, July 2021 Min Typ 1.23 Max Units 1.39 V 1.45 84 nC 27 ns 91 nC 28 ns 3 Typical Performance - Dynamic Parameter Value Symbol Test Conditions Ciss Coss Crss VDS=400V, VGS=0V f=100kHz 1400 93 2.5 pF Effective output capacitance, energy related Coss(er) VDS=0V to 400V, VGS=0V 116 pF Effective output capacitance, time related Coss(tr) VDS=0V to 400V, VGS=0V 232 pF COSS stored energy Eoss VDS=400V, VGS=0V 9.3 mJ Total gate charge Gate-drain charge Gate-source charge QG QGD QGS VDS=400V, ID=40A, VGS = 0V to 15V 37.8 8 11.8 nC Turn-on delay time td(on) Input capacitance Output capacitance Reverse transfer capacitance Rise time Turn-off delay time Fall time tr td(off) tf Turn-on energy including RS energy EON Turn-off energy including RS energy EOFF Total switching energy ETOTAL Snubber RS energy during turn-on ERS_ON Snubber RS energy during turn-off ERS_OFF Turn-on delay time Rise time Turn-off delay time Fall time td(off) tf Turn-on energy including RS energy EON Turn-off energy including RS energy EOFF Total switching energy ETOTAL Snubber RS energy during turn-on ERS_ON Snubber RS energy during turn-off ERS_OFF Typ Max Units 10 Notes 4 and 5, VDS=400V, ID=40A, Gate Driver =0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=5W, inductive Load, FWD: same device with VGS = 0V and RG = 5W, RC snubber: RS=10W and CS=200pF, TJ=25°C 49 53 ns 14 455 140 595 mJ 4 10 td(on) tr Min 15 Notes 4 and 5, VDS=400V, ID=40A, Gate Driver =0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=5W, inductive Load, FWD: same device with VGS = 0V and RG = 5W, RC snubber: RS=10W and CS=200pF, TJ=150°C 47 51 ns 14 505 157 662 mJ 4 10 4. Measured with the switching test circuit in Figure 35. 5. In this datasheet, all the switching energies (turn-on energy, turn-off energy and total energy) presented in the tables and Figures include the device RC snubber energy losses. Datasheet: UJ4C075023K3S Rev. B, July 2021 4 Typical Performance - Dynamic (continued) Parameter Turn-on delay time Rise time Turn-off delay time Fall time Symbol td(on) tr td(off) tf Turn-on energy including RS energy EON Turn-off energy including RS energy EOFF Total switching energy ETOTAL Snubber RS energy during turn-on ERS_ON Snubber RS energy during turn-off ERS_OFF Turn-on delay time Rise time Turn-off delay time Fall time Test Conditions td(off) tf Turn-on energy including RS energy EON Turn-off energy including RS energy EOFF Total switching energy ETOTAL Snubber RS energy during turn-on ERS_ON Snubber RS energy during turn-off ERS_OFF Min Typ Max Units 10 Note 6, VDS=400V, ID=40A, Gate Driver =0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=5W, inductive Load, FWD: UJ3D06520TS, RC snubber: RS=10W and CS=200pF, TJ=25°C 45 50 ns 11 366 135 501 mJ 4.4 10 td(on) tr Value 10 Note 6, VDS=400V, ID=40A, Gate Driver =0V to +15V, Turn-on RG,EXT=1W, Turn-off RG,EXT=5W, inductive Load, FWD: UJ3D06520TS, RC snubber: RS=10W and CS=200pF, TJ=150°C 47 53 ns 17 450 157 607 mJ 4.4 10 6. Measured with the switching test circuit in Figure 36. Datasheet: UJ4C075023K3S Rev. B, July 2021 5 Typical Performance Diagrams 120 120 100 Vgs = 15V 80 Drain Current, ID (A) Drain Current, ID (A) 100 Vgs = 10V Vgs = 8V 60 Vgs = 7V Vgs = 6.5V 40 20 60 Vgs = 15V Vgs = 8V 40 Vgs = 7V Vgs = 6.5V 20 0 Vgs = 6V 0 0 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 10 Figure 1. Typical output characteristics at TJ = - 55°C, tp < 250ms 0 1 2 3 4 5 6 7 8 9 Drain-Source Voltage, VDS (V) 10 Figure 2. Typical output characteristics at TJ = 25°C, tp < 250ms 3.0 On Resistance, RDS_ON (P.U.) 120 100 Drain Current, ID (A) 80 80 60 Vgs = 15V Vgs = 8V 40 Vgs = 6.5V 20 Vgs = 6V Vgs = 5.5V 1 2 3 4 5 6 7 8 Drain-Source Voltage, VDS (V) 9 Id = 20A 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) 10 Figure 3. Typical output characteristics at TJ = 175°C, tp < 250ms Datasheet: UJ4C075023K3S Id = 40A 0.0 0 0 2.5 Figure 4. Normalized on-resistance vs. temperature at VGS = 12V Rev. B, July 2021 6 100 80 Tj = 175°C Tj = 125C Tj = 25°C Tj = - 55°C 80 70 60 50 40 30 20 Tj = 25°C 60 Tj = 175°C 50 40 30 20 10 10 0 0 0 20 40 60 80 Drain Current, ID (A) 100 120 Figure 5. Typical drain-source on-resistances at VGS = 12V 0 2 3 4 5 6 7 8 Gate-Source Voltage, VGS (V) 9 10 Gate-Source Voltage, VGS (V) 20 5 4 3 2 1 0 -100 1 Figure 6. Typical transfer characteristics at VDS = 5V 6 Threshold Voltage, Vth (V) Tj = -55°C 70 Drain Current, ID (A) On-Resistance, RDS(on) (mW) 90 15 10 5 Vds = 400V Vds = 500V 0 -5 -50 0 50 100 150 Junction Temperature, TJ (°C) Figure 7. Threshold voltage vs. junction temperature at VDS = 5V and ID = 10mA Datasheet: UJ4C075023K3S -10 200 0 10 20 30 40 Gate Charge, QG (nC) 50 60 Figure 8. Typical gate charge at ID = 40A Rev. B, July 2021 7 0 0 Vgs = -5V Vgs = 0V Vgs = 5V -20 Vgs = 8V -30 -40 -50 Vgs = 0V Vgs = 5V -20 Vgs = 8V -30 -40 -50 -60 -60 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 9. 3rd quadrant characteristics at TJ = -55°C -4 -3 -2 -1 Drain-Source Voltage, VDS (V) 0 Figure 10. 3rd quadrant characteristics at TJ = 25°C 0 30 Vgs = - 5V -10 25 Vgs = 0V Vgs = 5V -20 20 Vgs = 8V EOSS (mJ) Drain Current, ID (A) Vgs = - 5V -10 Drain Current, ID (A) Drain Current, ID (A) -10 -30 15 -40 10 -50 5 0 -60 -4 -3 -2 -1 Drain-Source Voltage, VDS (V) Figure 11. 3rd quadrant characteristics at TJ = 175°C Datasheet: UJ4C075023K3S 0 0 100 200 300 400 500 600 700 800 Drain-Source Voltage, VDS (V) Figure 12. Typical stored energy in COSS at VGS = 0V Rev. B, July 2021 8 10000 80 70 DC Drain Current, ID (A) Capacitance, C (pF) Ciss 1000 Coss 100 10 60 50 40 30 20 Crss 10 0 1 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) 100 200 300 400 500 600 700 800 Drain-Source Voltage, VDS (V) Figure 13. Typical capacitances at f = 100kHz and VGS = 0V Figure 14. DC drain current derating 300 Thermal Impedance, ZqJC (°C/W) Power Dissipation, Ptot (W) 350 250 200 150 100 50 0 -75 -50 -25 0 25 50 75 100 125 150 175 Case Temperature, TC (°C) Figure 15. Total power dissipation Datasheet: UJ4C075023K3S 0.1 0.01 D = 0.5 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Pulse Time, tp (s) Figure 16. Maximum transient thermal impedance Rev. B, July 2021 9 100 1ms 80 10ms 10 100ms 1 Vds = 500V 40 1ms 10ms DC 0 10 100 1000 Drain-Source Voltage, VDS (V) 0 Figure 17. Safe operation area at TC = 25°C, D = 0, Parameter tp 1600 1000 Etot Eon Eoff 800 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 18. Reverse recovery charge Qrr vs. junction temperature Switching Energy (mJ) Switching Energy (mJ) 1200 25 2000 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V, RG = 5W 1400 IS = 40A, di/dt = 1500A/ms, VGS = 0V, RG =5W 20 0.1 1 Vds = 400V 60 Qrr (nC) Drain Current, ID (A) 100 600 400 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V, RG = 5W 1500 1000 Etot Eon Eoff 500 200 0 0 0 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 19. Clamped inductive switching energy vs. drain current at VDS = 400V and TJ = 25°C Datasheet: UJ4C075023K3S 0 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 20. Clamped inductive switching energy vs. drain current at VDS = 500V and TJ = 25°C Rev. B, July 2021 10 30 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V, RG = 5W 25 20 Rs_Etot Rs_Eon Rs_Eoff 15 10 10 0 0 10 20 30 40 50 Drain Current, ID (A) 60 1000 70 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 22. RC snubber energy losses vs. drain current at VDS = 500V and TJ = 25°C Snubber RS Energy (mJ) 600 400 Eon 200 0 15 VGS = 0V/15V, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V 800 Rs_Etot Rs_Eon Rs_Eoff 15 5 Figure 21. RC snubber energy loss vs. drain current at VDS = 400V and TJ = 25°C Switching Energy (mJ) 20 5 0 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V, RG = 5W 25 Snubber RS Energy (mJ) Snubber RS Energy (mJ) 30 VGS = 0V/15V, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V 12 9 Rs_Eon Rs_Eoff 6 3 Eoff 0 0 0 20 40 60 External RG, RG_EXT (W) 80 Figure 23. Clamped inductive switching energies vs. RG,EXT at VDS = 400V, ID = 40A, and TJ = 25°C Datasheet: UJ4C075023K3S 0 100 20 40 60 External RG, RG,_EXT (W) 80 100 Figure 24. RC snubber energy losses vs. RG,EXT at VDS = 400V, ID = 40A, and TJ = 25°C Rev. B, July 2021 11 70 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: RS = 10W, FWD: same device with VGS = 0V, RG = 5W 1000 800 600 Etot Eon Eoff 400 50 Rs_Etot Rs_Eon Rs_Eoff 40 30 20 200 10 0 0 0 200 400 600 Snubber Capacitance, CS (pF) 800 500 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V, RG = 5W 300 200 800 Figure 26. RC snubber energy losses vs. snubber capacitance CS at VDS = 400V, ID = 40A, and TJ = 25°C Switching Energy (mJ) 600 400 200 400 600 Snubber Capacitance, CS (pF) 1200 Etot Eon Eoff 700 0 800 Figure 25. Clamped inductive switching energies vs. snubber capacitance CS at VDS = 400V, ID = 40A, and TJ = 25°C Switching Energy (mJ) VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: RS = 10W, FWD: same device with VGS = 0V, RG = 5W 60 Snubber RS Energy (mJ) Switching Energy (mJ) 1200 Etot Eon Eoff 1000 800 600 VGS = 0V/15V, RG_ON=1W, RG_OFF=5W, Device RC snubber: CS=200pF, RS = 10W, FWD: same device with VGS = 0V, RG = 5W 400 200 100 0 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 27. Clamped inductive switching energy vs. junction temperature at VDS =400V and ID = 40A Datasheet: UJ4C075023K3S 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 28. Clamped inductive switching energy vs. junction temperature at VDS =500V and ID = 40A Rev. B, July 2021 12 1400 1800 VGS = 0V/15V, RG_ON=1W, RG_OFF= 5W, Device RC snubber: CS=200pF, RS = 10W, FWD: UJ3D06520TS 1000 800 Etot Eon Eoff 600 400 1400 1200 800 600 400 200 0 0 0 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 29. Clamped inductive switching energy vs. drain current at VDS = 400V and TJ = 25°C 0 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 30. Clamped inductive switching energy vs. drain current at VDS = 500V and TJ = 25°C 35 Rs_Etot Rs_Eon Rs_Eoff VGS = 0V/15V, RG_ON=1W, RG_OFF= 5W, Device RC snubber: CS=200pF, RS = 10W, FWD: UJ3D06520TS 30 Snubber RS Energy (mJ) Snubber RS Energy (mJ) VGS = 0V/15V, RG_ON=1W, RG_OFF= 5W, Device RC snubber: CS=200pF, RS = 10W, FWD: UJ3D06520TS 20 Etot Eon Eoff 1000 200 25 VGS = 0V/15V, RG_ON=1W, RG_OFF= 5W, Device RC snubber: CS=200pF, RS = 10W, FWD: UJ3D06520TS 1600 Switching Energy (mJ) Switching Energy (mJ) 1200 15 10 5 25 20 15 Rs_Etot Rs_Eon Rs_Eoff 10 5 0 0 0 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 31. RC snubber energy losses vs. drain current at VDS = 400V and TJ = 25°C Datasheet: UJ4C075023K3S 0 10 20 30 40 50 Drain Current, ID (A) 60 70 Figure 32. RC snubber energy losses vs. drain current at VDS = 500V and TJ = 25°C Rev. B, July 2021 13 1000 Etot Eon Eoff 600 Switching Energy (mJ) Switching Energy (mJ) 800 400 VGS = 0V/15V, RG_ON=1W, RG_OFF= 5W, Device RC snubber: CS=200pF, RS = 10W, FWD: UJ3D06520TS 200 Etot Eon Eoff 800 600 VGS = 0V/15V, RG_ON=1W, RG_OFF= 5W, Device RC snubber: CS=200pF, RS = 10W, FWD: UJ3D06520TS 400 200 0 0 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) 175 Figure 33. Clamped inductive switching energy vs. junction temperature at VDS =400V and ID = 40A Figure 34. Clamped inductive switching energy vs. junction temperature at VDS =500V and ID = 40A Figure 35. Schematic of the half-bridge mode switching test circuit. Note, a bus RC snubber (RBS = 2.5W, CBS=100nF) is used to reduce the power loop high frequency oscillations. Figure 36. Schematic of the chopper mode switching test circuit. Note, a bus RC snubber (RBS = 2.5W, CBS=100nF) is used to reduce the power loop high frequency oscillations. Datasheet: UJ4C075023K3S Rev. B, July 2021 14 Applications Information SiC FETs are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior performance in terms of low on-resistance (RDS(on)), output capacitance (Coss), gate charge (QG), and reverse recovery charge (Qrr) leading to low conduction and switching losses. The SiC FETs also provide excellent reverse conduction capability eliminating the need for an external anti-parallel diode. Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due to the high dv/dt and di/dt rates. An external gate resistor is recommended when the FET is working in the diode mode in order to achieve the optimum reverse recovery performance. For more information on SiC FET operation, see www.unitedsic.com. A snubber circuit with a small R(G), or gate resistor, provides better EMI suppression with higher efficiency compared to using a high R(G) value. There is no extra gate delay time when using the snubber circuitry, and a small R(G) will better control both the turn-off V(DS) peak spike and ringing duration, while a high R(G) will damp the peak spike but result in a longer delay time. In addition, the total switching loss when using a snubber circuit is less than using high R(G), while greatly reducing E(OFF) from mid-to-full load range with only a small increase in E(ON). Efficiency will therefore improve with higher load current. For more information on how a snubber circuit will improve overall system performance, visit the UnitedSiC website at www.unitedsic.com Disclaimer UnitedSiC reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. UnitedSiC assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. UnitedSiC assumes no liability whatsoever relating to the choice, selection or use of the UnitedSiC products and services described herein. Datasheet: UJ4C075023K3S Rev. 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