HMC461LP3 / 461LP3E
v02.0705
11
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Typical Applications
Features
A high linearity 1 watt amplifier for:
+45 dBm Output IP3 (Balanced Configuration)
• Multi-Carrier Systems
12 dB Gain
• GSM, GPRS & EDGE
48% PAE @ +30.5 dBm Pout
• CDMA & W-CDMA
+20 dBm W-CDMA Channel Power @ -45 dBc ACP
• PHS
3x3 mm QFN SMT Package
• Balanced or Push-Pull Configurable
LINEAR & POWER AMPLIFIERS - SMT
Functional Diagram
General Description
The HMC461LP3 & HMC461LP3E are 1.7 - 2.2 GHz
high output IP3 GaAs InGaP Heterojunction Bipolar
Transistor (HBT) dual-channel MMIC amplifiers.
The linear performance of two HMC455LP3 high
IP3 drivers is offered in this single IC which can be
configured in a balanced or push-pull amplifier circuit.
The amplifier provides 12 dB of gain and +30.5 dBm
of saturated power at 48% PAE from a single +5 Vdc
supply while utilizing external baluns in a balanced
configuration. The high output IP3 of +45 dBm coupled
with the low VSWR of 1.2:1 make the HMC461LP3
& HMC461LP3E ideal driver amplifiers for PCS/3G
wireless infrastructures. A low cost, leadless 3x3 mm
QFN surface mount package (LP3) houses the dual
MMIC amplifier IC. The LP3 provides an exposed
base for excellent RF and thermal performance.
Electrical Specifi cations*, TA = +25° C, Vs= +5V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
1.7 - 1.9
10
Gain Variation Over Temperature
12.5
0.012
Typ.
Max.
1.9 - 2.2
9
0.02
GHz
12
0.012
Units
dB
0.02
dB / °C
Input Return Loss
17
18
Output Return Loss
20
25
dB
29.5
dBm
30.5
dBm
45
dBm
Output Power for 1dB Compression (P1dB)
26
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
29
26.5
29.5
41
44
42
dB
Noise Figure
6.5
6
dB
Supply Current (Icq)
300
300
mA
* Specifi cations and data refl ect HMC461LP3 measured with external baluns in a balanced amplifi er confi guration optimized for
1.85 - 2.2 GHz per application circuit herein. Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
11 - 250
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Gain vs. Temperature
Broadband Gain & Return Loss
20
+25C
+85C
-40C
17
5
GAIN (dB)
S21
S11
S22
-5
14
11
11
-15
8
5
1.7
-25
1
1.5
2
2.5
3
1.8
Input Return Loss vs. Temperature
RETURN LOSS (dB)
RETURN LOSS (dB)
2.2
2.3
-5
+25C
+85C
-40C
-10
-15
-20
+25C
+85C
-40C
-10
-15
-20
-25
1.7
1.9
2.1
2.3
-30
1.5
2.5
1.7
FREQUENCY (GHz)
31
31
Psat (dBm)
33
29
27
+25C
+85C
-40C
1.8
1.9
2
2.1
2.3
2.5
Psat vs. Temperature
33
25
1.9
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB (dBm)
2.1
0
-5
23
1.7
2
Output Return Loss vs. Temperature
0
-25
1.5
1.9
FREQUENCY (GHz)
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - SMT
GAIN & RETURN LOSS (dB)
15
29
+25C
+85C
-40C
27
25
2.1
2.2
2.3
FREQUENCY (GHz)
23
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 251
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Noise Figure vs. Temperature
50
10
47
8
NOISE FIGURE (dB)
11
IP3 (dBm)
Output IP3 vs. Temperature
44
+25C
+85C
-40C
41
35
1.7
4
+25C
+85C
-40C
2
1.8
1.9
2
2.1
2.2
0
1.7
2.3
1.8
1.9
FREQUENCY (GHz)
48
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
54
48
Pout
Gain
PAE
36
30
24
18
12
6
0
-10
-4
2
8
14
20
42
24
18
12
6
-4
2
G ain (dB ), P 1dB (dB m), P s at (dBm)
+25C
+85C
-40C
-15
-20
-25
1.8
1.9
2
14
20
26
Gain & Power vs.
Supply Voltage @ 2.15 GHz
-5
1.7
8
INPUT POWER (dBm)
0
1.6
2.3
30
0
-10
26
Reverse Isolation vs. Temperature
-30
1.5
2.2
Pout
Gain
PAE
36
INPUT POWER (dBm)
-10
2.1
Power Compression @ 2.15 GHz
54
42
2
FREQUENCY (GHz)
Power Compression @ 1.95 GHz
ISOLATION (dB)
LINEAR & POWER AMPLIFIERS - SMT
38
6
2.1
2.2
2.3
FREQUENCY (GHz)
32
30
28
26
24
22
G ain
20
P 1dB
P s at
18
16
14
12
10
8
4. 5
4.75
5
5. 25
5.5
S UP P LY VOL T AG E (Vdc)
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
11 - 252
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
ACPR vs. Supply Voltage @ 1.96 GHz
CDMA2000, 9 Channels Forward
ACPR vs. Supply Voltage @ 2.14 GHz
W-CDMA, 64 DCPH
-40
-35
-40
-50
WCDMA
Frequency : 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
4.5V 5V 5.5V
-55
-45
-50
11
-55
-60
-60
Source ACPR
Source ACPR
4.5V
-65
5V
5.5V
-65
8
10
12
14
16
18
20
22
24
8
Channel Output Power (dBm)
10
12
14
16
18
20
22
24
Channel Output Power (dBm)
* Source ACPR: All data is RSS corrected for source ACPR. Dashed lines are
shown where corrected data is below source ACPR.
Absolute Maximum Ratings
Output IP2 vs. Temperature
80
75
IP2 (dBm)
70
65
60
+25C
+85C
-40C
55
50
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
FREQUENCY (GHz)
Collector Bias Voltage (Vcc1, Vcc2)
+6 Vdc
RF Input Power (RFIN)(Vs = +5Vdc)
+30 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 32 mW/°C above 85 °C)
2.08 W
Thermal Resistance
(junction to ground paddle)
31 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
LINEAR & POWER AMPLIFIERS - SMT
CDMA2000 Rev. 8
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
ACPR (dBc)
ACPR (dBc)
-45
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 253
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Outline Drawing
LINEAR & POWER AMPLIFIERS - SMT
11
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC461LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC461LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
461
XXXX
[2]
461
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
11 - 254
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Pin Descriptions
Function
Description
Interface Schematic
2, 3, 5 - 8,
10, 11, 13 - 16
N/C
This pin may be connected to RF ground.
1, 4
IN1, IN2
RF Input. This pin is AC coupled.
An off chip series matching capacitor is required.
9, 12
OUT1, OUT2
RF output and DC Bias for the output stage.
GND
Package bottom must be connected to RF/DC ground.
11
LINEAR & POWER AMPLIFIERS - SMT
Pin Number
Recommended Application Circuit for Balanced Amplifi er Confi guration
Recommended Component Values
L1, L2
8.2 nH
C1, C2
2.2 μF
C5, C6
5.0 pF
C7, C8
0.9 pF
C3, C4
100 pF
Impedance
C7, C8
0.8 pF
C9, C10
4.0 pF
R1, R2
130 Ohm
TL1
TL2
50 Ohm
50 Ohm
Physical Length
0.09”
0.18”
Electrical Length
9.5°
19°
PCB Material: 10 mil Rogers 4350, Er = 3.48
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 255
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Evaluation PCB
LINEAR & POWER AMPLIFIERS - SMT
11
J3, J4
Pin Number
Description
1, 2, 3
GND
4, 5, 6
Vs
List of Materials for Evaluation PCB 106485 [1]
Item
Description
J1, J2
PCB Mount SMA Connector
J3, J4
2 mm DC Header
C1, C2
2.2 μF Capacitor, Tantalum
C3, C4
100 pF Capacitor, 0402 Pkg.
C5, C6
5 pF Capacitor, 0402 Pkg.
C7, C8
0.8 pF Capacitor, 0402 Pkg.
C9, C10
4 pF Capacitor, 0402 Pkg.
L1, L2
8.2 nH Inductor, 0402 Pkg.
U1
HMC461LP3 / HMC461LP3E
Power Amplifier
U2, U3
Panasonic Balun, P/N EHFFD - 1619
PCB [2]
106483 Evaluation PCB, 10 mils
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
Specifications and data reflect HMC461LP3 measured with external baluns in a balanced
amplifier configuration optimized for 1.85 - 2.2 GHz per application circuit herein.
Contact HMC Applications for 1.7 - 1.85 GHz performance optimization.
11 - 256
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
HMC461LP3 / 461LP3E
v02.0705
InGaP HBT 1 Watt High IP3
AMPLIFIER, 1.7 - 2.2 GHz
Notes:
LINEAR & POWER AMPLIFIERS - SMT
11
For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
20 Alpha Road, Chelmsford, MA 01824 Phone: Phone:
978-250-3343
978-250-3373
781-329-4700Fax:
• Order
online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
Order On-line at www.hittite.com
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
11 - 257
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