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106815-HMC441LM1

106815-HMC441LM1

  • 厂商:

    AD(亚德诺)

  • 封装:

    SMD

  • 描述:

    EVALBOARDHMC441LM1

  • 详情介绍
  • 数据手册
  • 价格&库存
106815-HMC441LM1 数据手册
HMC441LM1 v04.1019 LINEAR & POWER AMPLIFIERS - SMT GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Typical Applications Features The HMC441LM1 is a medium PA for: Gain: 15 dB • Point-to-Point Radios Saturated Power: +21.5 dBm @ 27% PAE • Point-to-Multi-Point Radios • VSAT Single Supply Voltage: +5V w/ Optional Gate Bias • LO Driver for HMC Mixers 50 Ohms Matched Input/Output • Military EW & ECM Leadless SMT Package, 25mm2 Functional Diagram General Description The HMC441LM1 is a broadband 7 to 15.5 GHz GaAs PHEMT MMIC Medium Power Amplifier in an SMT leadless chip carrier package. The amplifier provides 15 dB of gain, 21.5 dBm of saturated power at 27% PAE from a +5V supply voltage. An optional gate bias is provided to allow adjustment of gain, RF output power, and DC power dissipation. This 50 Ohm matched amplifier does not require any external components making it an ideal linear gain block or driver for HMC SMT mixers. Vgg1, Vgg2: Optional Gate Bias Electrical Specifications, TA = +25° C, Vdd = 5V, Vgg1 = Vgg2 = Open Parameter Min. Frequency Range Gain 12.5 Gain Variation Over Temperature Max. Min. 15 0.015 Typ. Max. Min. 8.0 - 12.5 13.5 0.02 16 0.015 Typ. Max. Min. 12.5 - 14.0 12.5 0.02 15 0.015 Typ. Max. 14.0 - 15.5 11 0.02 GHz 13.5 0.015 Units dB 0.02 dB/ °C Input Return Loss 9 13 16 16 dB Output Return Loss 14 17 20 17 dB 19 dBm 20.5 dBm dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 1 Typ. 7.0 - 8.0 15.5 18.5 16 19.5 19 17 20.5 20 16 21.5 Output Third Order Intercept (IP3) 29 30 30 30 Noise Figure 4.5 4.5 4.5 4.5 Supply Current (Idd) 90 115 90 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 115 90 115 90 dB 115 mA For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz 20 10 16 S21 S11 S22 0 -10 12 +25C +85C -40C 8 4 -20 0 -30 4 8 12 16 6 20 8 Input Return Loss vs. Temperature 14 16 18 0 +25C +85C -40C +25C +85C -40C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 12 Output Return Loss vs. Temperature 0 -10 -15 -20 -10 -15 -20 -25 -25 6 8 10 12 14 16 18 6 8 FREQUENCY (GHz) 12 14 16 18 16 18 Psat vs. Temperature 23 21 21 Psat (dBm) 23 19 17 +25C +85C -40C 15 10 FREQUENCY (GHz) P1dB vs. Temperature P1dB (dBm) 10 FREQUENCY (GHz) FREQUENCY (GHz) LINEAR & POWER AMPLIFIERS - SMT Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 19 +25C +85C -40C 17 15 13 13 6 8 10 12 14 FREQUENCY (GHz) 16 18 6 8 10 12 14 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Power Compression @ 12 GHz Output IP3 vs. Temperature Pout (dBm), GAIN (dB), PAE (%) 36 Pout Gain PAE 25 32 IP3 (dBm) 20 15 28 +25C +85C -40C 24 10 20 5 0 -10 16 -6 -2 2 6 10 6 8 32 30 28 Gain P1dB Psat IP3 24 22 20 18 16 14 12 10 3 3.5 4 4.5 5 5.5 16 18 210 35 180 30 IP3 150 25 Psat 120 20 15 90 Gain 60 P1dB 10 Idd 5 30 0 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 Vgg1, Vgg2 Gate Volltage (V) Reverse Isolation vs. Temperature Noise Figure vs. Temperature 10 0 -10 +25C +85C -40C ISOLATION (dB) 8 NOISE FIGURE (dB) 14 Gain, Power, Output IP3 & Idd vs. Gate Voltage @ 12 GHz GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) Gain, Power & Output IP3 vs. Supply Voltage @ 12 GHz 26 12 FREQUENCY (GHz) Vdd Supply Voltage (V) 6 4 2 +25C +85C -40C -20 -30 -40 -50 0 -60 6 8 10 12 14 FREQUENCY (GHz) 3 10 INPUT POWER (dBm) 16 18 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D Idd (mA) LINEAR & POWER AMPLIFIERS - SMT 30 HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Additive Phase Noise Vs Offset Frequency, RF Frequency = 8 GHz, -70 PHASE NOISE (dBc/Hz) -80 -90 -100 -110 -120 -130 -140 -150 -160 -170 10 100 1K 10K 100K 1M OFFSET FREQUENCY (Hz) Notes: For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D LINEAR & POWER AMPLIFIERS - SMT RF Input Power = 5 dBm (P1dB) 4 HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +5.5 V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1,Vgg2) -8 to 0V +5.5 92 RF Input Power (RFIN) (Vdd = +5 Vdc) +15 dBm +5.0 90 Channel Temperature 175 °C +4.5 88 +3.3 83 Continuous Pdiss (T = 85 °C) (derate 7.5 mW/°C above 85 °C) 0.67 W Thermal Resistance (channel to ground paddle) 133 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C +3.0 82 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 8-Terminal Chip Array Small Outline No Lead Cavity [LGA_CAV] 5.08 x 5.08 mm Body and 1.01 mm Package Height (CE-8-1) Dimensions shown in millimeters Outline Drawing PIN 1 INDICATOR AREA 5.21 5.08 SQ 4.95 0.56 0.46 0.36 1.00 BSC DETAIL A EXPOSED PAD 4 1.47 1.37 1.27 TOP VIEW 1.14 1.01 0.88 SIDE VIEW 5 8 0.61 0.51 0.41 7 BOTTOM VIEW 0.25 REF 1.83 1.73 1.63 SEATING PLANE 1.45 1.35 1.25 PKG-000000 1 3 2.67 2.54 2.41 1.65 1.55 1.45 DETAIL A 0.81 0.71 0.61 10-04-2017-B LINEAR & POWER AMPLIFIERS - SMT Absolute Maximum Ratings 8-Terminal Chip Array Small Outline No Lead Cavity [LGA_CAV] 5.08 mm × 5.08 mm Body and 1.01 mm Package Height (CE-8-1) Dimensions shown im millimeters Package Information Part Number Package Body Material Lead Finish Package Marking [1] HMC441LM1 Plastic Gold plated H441 XXXX HMC441LM1TR Plastic Gold plated H441 XXXX [1] 4-Digit lot number XXXX 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Pin Descriptions Function Description 1, 3, 5 N/C This pin may be connected to RF ground. 2 Vdd Power Supply Voltage for the amplifier. An external bypass capacitor of 100 pF is recommended. 4 RFOUT This pin is AC coupled and matched to 50 Ohms. 6, 7 Vgg2, Vgg1 Optional gate control for amplifier. If left open, the amplifier will run at standard current. Negative voltage applied will reduce current. 8 RFIN This pin is AC coupled and matched to 50 Ohms. GND Package bottom must be connected to RF ground. Interface Schematic For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D LINEAR & POWER AMPLIFIERS - SMT Pin Number 6 HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz LINEAR & POWER AMPLIFIERS - SMT Evaluation PCB The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground (GSG) probes for testing. Suggested probe pitch is 400um (16 mils). Alternatively, the board can be mounted in a metal housing with 2.4mm coaxial connectors. Evaluation Circuit Board Layout Design Details 7 Layout Technique Micro Strip to CPWG Material Rogers 4003 with 1/2 oz, Cu Dielectric Thickness 0.008” (0.20 mm) Microstrip Line Width 0.018” (0.46 mm) CPWG Line Width 0.016” (0.41 mm) CPWG Line to GND Gap 0.005” (0.13 mm) Ground Via Hole Diameter 0.008” (0.20 mm) C1 - C3 100 pF Capacitor, 0402 Pkg. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Amplifier Application Circuit LINEAR & POWER AMPLIFIERS - SMT Suggested LM1 PCB Land Pattern Tolerance: ± 0.003” (± 0.08 mm) Note: Optional gate bias connections. Vgg1 and Vgg2 may be connected to a common Vgg feed. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 8 HMC441LM1 v04.1019 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 7 - 15.5 GHz Recommended SMT Attachment Technique Follow these precautions to avoid permanent damage: Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. LM1 devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. 225 200 175 0 TEMPERATURE ( C) The HMC LM1 package was designed to be compatible with high volume surface mount PCB assembly processes. The LM1 package requires a specific mounting pattern to allow proper mechanical attachment and to optimize electrical performance at millimeterwave frequencies. This PCB layout pattern can be found on each LM1 product data sheet. It can also be provided as an electronic drawing upon request from Hittite Sales & Application Engineering. 150 125 100 75 50 25 0 1 2 3 4 5 TIME (min) 6 7 8 General Handling: Handle the LM1 package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure to the top of the lid. Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is not recommended. Conductive epoxy attachment is not recommended. Solder Paste: Solder paste should be selected based on the user’s experience and be compatible with the metallization systems used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes. Solder Paste Application: Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical & electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies. Solder Reflow: The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder reflow profile is suggested above. Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies. The thermocouple should be moved to various positions on the board to account for edge and corner effects and varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the location of the device. LINEAR & POWER AMPLIFIERS - SMT Preparation & Handling of the LM1 Microwave Package for Surface Mounting Follow solder paste and oven vendor’s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to withstand a peak temperature of 235°C for 15 seconds. Verify that the profile will not expose device to temperatures in excess of 235°C. Cleaning: A water-based flux wash may be used. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 9
106815-HMC441LM1
物料型号: - 型号:HMC441LM1 - 包装类型:无引线表面贴装芯片载体封装(Leadless SMT Package)

器件简介: - 这是一个7到15.5 GHz的宽带中功率放大器,使用GaAs PHEMT技术。 - 增益为15 dB,饱和功率为+21.5 dBm,功率附加效率(PAE)为27%,工作电压为+5V。 - 设备提供可选的栅极偏置,以允许调整增益、RF输出功率和直流功耗。 - 该放大器50欧姆匹配,无需外部组件,是理想的线性增益块或HMC SMT混频器的驱动器。

引脚分配: - 引脚1、3、5:无连接(N/C),可以连接到射频地。 - 引脚2:Vdd,放大器的电源电压,建议外接100pF的旁路电容。 - 引脚4:RFOUT,交流耦合,匹配到50欧姆。 - 引脚6、7:Vgg1、Vgg2,可选的栅极控制,如果留空,放大器将以标准电流运行。 - 引脚8:RFIN,交流耦合,匹配到50欧姆。 - 地(GND):封装底部必须连接到射频地。

参数特性: - 增益:12.5至16 dB - 增益随温度变化:每摄氏度变化0.015至0.02 dB - 输入回波损耗:至少9 dB - 输出回波损耗:至少14 dB - 1 dB压缩输出功率(P1dB):15.5至18.5 dBm - 饱和输出功率(Psat):19.5至21.5 dBm - 输出三阶截取点(IP3):29至30 dBm - 噪声系数:4.5 dB - 电源电流(idd):90至115 mA

功能详解: - 该放大器设计用于点对点无线电、点对多点无线电、VSAT、HMC混频器的本振驱动以及军事电子战和电子对抗。 - 提供了增益、输出功率、噪声系数和电源电流等电气规格。 - 还提供了在不同温度下的性能图表,包括增益、1 dB压缩点、饱和输出功率、三阶截取点和噪声系数。

应用信息: - 适用于宽带增益和回波损耗应用。 - 提供了评估PCB的布局设计细节,包括材料、介电厚度、微带线宽度、共面波导线宽度和地间隙。

封装信息: - 封装类型:8端子芯片阵列小外形无引线腔体[LGA_CAV],尺寸为5.08 mm × 5.08 mm,封装高度为1.01 mm。 - 封装标记:"H441 xXXX" 或 "H441 XXXX",其中"XXXX"代表4位批次号。
106815-HMC441LM1 价格&库存

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