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HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
Typical Applications
Features
The HMC742LP5E is ideal for:
-19.5 to 12 dB Gain Control in 0.5 dB Steps
• Cellular/3G Infrastructure
Power-up State Selection
• WiBro / WiMAX / 4G
High Output IP3: +39 dBm
• Microwave Radio & VSAT
TTL/CMOS Compatible
Serial, Parallel, or latched Parallel Control
• Test Equipment and Sensors
±0.25 dB Typical Gain Step Error
• IF & RF Applications
Single +5V Supply
32 Lead 5x5mm SMT Package: 25mm2
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
12 - 1
Functional Diagram
General Description
The HMC742LP5E is a digitally controlled variable
gain amplifier which operates from 70 MHz to 4
GHz, and can be programmed to provide from -19.5
dB attenuation, to 12 dB of gain, in 0.5 dB steps.
The HMC742LP5E delivers noise figure of 4 dB in
its maximum gain state, with output IP3 of up to
+39 dBm in any state. The dual mode gain control
interface accepts either a three-wire serial input or a
6 bit parallel word. The HMC742LP5E also features a
user selectable power up state and a serial output for
cascading other serially controlled Hittite components.
The HMC742LP5E is housed in an RoHS compliant
5x5 mm QFN leadless package, and requires minimal
external components.
Electrical Specifications, TA = +25° C, 50 Ohm System Vdd = +5V, Vs= +5V
Parameter
Min.
Gain (Maximum Gain State)
Gain Control Range
Input Return Loss
Output Return Loss
Gain Accuracy: (Referenced to Maximum Gain State)
All Gain States
Typ.
Max.
Min.
70 - 1000
Max.
Units
MHz
12
9
dB
31.5
31.5
dB
15
12
dB
14
10
dB
70 MHz - 350 MHz
± (0.3 + 5% of relative gain setting) Max
350 MHz - 1000 MHz
± (0.3 + 6% of relative gain setting) Max
Output Power for 1 dB Compression
Typ.
500 - 4000
± (0.3 + 4% of relative gain setting) Max
dB
21.5
22
dBm
Output Third Order Intercept Point
(Two-Tone Output Power= 12 dBm Each Tone)
40
39
dBm
Noise Figure (Max Gain State)
4
4.5
dB
70
170
70
170
ns
ns
Switching Characteristics
tRISE, tFall (10 / 90% RF)
tON, tOFF (Latch Enable to 10 / 90% RF)
Supply Current (Amplifier)
130
150
190
130
150
190
mA
Supply Current (Controller) Idd
1.0
2.0
3.0
1.0
2.0
3.0
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
70 to 1000 MHz Tuning
Relative Gain Setting
Maximum Gain vs. Temperature
(Referenced to Maximum Gain State)
17
0
RELATIVE GAIN (dB)
15
GAIN (dB)
13
11
+25 C
+85 C
-40 C
9
-10
16dB
8dB
-20
31.5dB
-30
7
-40
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
FREQUENCY (GHz)
Input Return Loss
0.8
1
0.8
1
Output Return Loss
0
-10
RETURN LOSS (dB)
0
RETURN LOSS (dB)
0.6
FREQUENCY (GHz)
0dB
-20
31.5dB
-30
-10
31.5dB
-20
0dB
-30
16dB
-40
-40
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
FREQUENCY (GHz)
Bit Error vs. Relative Gain
Bit Error vs. Frequency
4
3
3
0.5, 0.7, 0.9GHz
2
BIT ERROR (dB)
31.5dB
BIT ERROR (dB)
0.6
FREQUENCY (GHz)
2
16dB
1
0
1
0
-1
0.1, 0.3GHz
-2
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
-1
0
8
16
24
32
RELATIVE GAIN SETTING (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
12
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
5
12 - 2
HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
70 to 1000 MHz Tuning
Relative Phase vs. Frequency
Step Error vs. Frequency
1
10
2, 4dB
8, 16dB
31.5dB
STEP ERROR (dB)
RELATIVE PHASE (DEG)
20
0
0, 0.5, 1, 2, 4dB
-10
0.5
0
-0.5
0.5, 8, 16dB
-20
12 - 3
0.2
0.4
0.6
0.8
-1
1
0
0.2
FREQUENCY (GHz)
0.4
0.6
0.8
1
0.8
1
0.8
1
FREQUENCY (GHz)
Noise Figure vs. Temperature [1]
Output P1dB vs. Temperature
8
24
6
P1dB (dBm)
NOISE FIGURE (dB)
23
4
2
22
21
+25 C
+85 C
-40 C
20
+25 C
+85 C
-40 C
19
0
18
0
0.2
0.4
0.6
0.8
1
0
0.2
FREQUENCY (GHz)
0.6
Output IP3 vs. Temperature
48
24
44
IP3 (dBm)
28
20
+25 C
+85 C
-40 C
16
0.4
FREQUENCY (GHz)
Psat vs. Temperature
Psat (dBm)
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
0
40
+25 C
+85 C
-40 C
36
12
32
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0.2
0.4
0.6
FREQUENCY (GHz)
[1] Max Gain State
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
0.5 to 4.0 GHz Tuning
Relative Gain Setting
(Referenced to Maximum Gain State)
16
0
12
-10
8
+25 C
+85 C
-40 C
4
0
0.5
-20
16dB
31.5dB
-30
-40
1
1.5
2
2.5
3
3.5
8dB
4
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
3.5
4
FREQUENCY (GHz)
Input Return Loss
Output Return Loss
0
0
0dB
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
0dB
-20
-30
16dB
31.5dB
-10
31.5dB
-20
-30
4dB
-40
0.5
1
1.5
2
2.5
3
3.5
-40
0.5
4
1
1.5
FREQUENCY (GHz)
2
2.5
3
3.5
4
24
28
32
FREQUENCY (GHz)
Bit Error vs. Relative Gain
Bit Error vs. Frequency
4
3
3
BIT ERROR (dB)
BIT ERROR (dB)
2
2
31.5dB
8dB
1
0
1.0, 4.0GHz
1
0
-1
-2
1dB
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
3
3.5
4
-1
2.0, 3.0GHz
0
4
8
12
16
20
RELATIVE GAIN STATE (dB)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
12
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
RELATIVE GAIN(dB)
GAIN(dB)
Maximum Gain vs. Frequency
12 - 4
HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
0.5 to 4.0 GHz Tuning
Relative Phase vs. Frequency
Step Error vs. Frequency
1
16dB
31.5dB
20
4, 8dB
8dB
STEP ERROR (dB)
RELATIVE PHASE (DEG)
30
10
0
-10
8dB
0.5
0
0.5, 31.5dB
-0.5
16dB
-20
-30
12 - 5
1
1.5
2
2.5
3
3.5
-1
4
0.5
1
1.5
28
6
23
4
+25 C
+85 C
-40 C
2
1
1.5
2
2.5
2.5
3
3.5
4
3
3.5
4
3
3.5
4
Output P1dB vs. Temperature
8
P1dB (dBm)
NOISE FIGURE (dB)
Noise Figure vs. Frequency [1]
0
0.5
2
FREQUENCY (GHz)
FREQUENCY (GHz)
3
3.5
18
+25 C
+85 C
-40 C
13
8
0.5
4
1
1.5
FREQUENCY (GHz)
2
2.5
FREQUENCY (GHz)
Psat vs. Temperature
Output IP3 vs. Temperature
33
50
45
28
40
23
IP3 (dBm)
Psat (dBm)
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
0.5
18
8
0.5
30
+25 C
+85 C
-40 C
13
1
1.5
2
2.5
FREQUENCY (GHz)
35
+25 C
+85 C
-40 C
25
3
3.5
4
20
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
[1] Max Gain State
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
Serial Control Interface
The HMC742LP5E contains a 3-wire SPI compatible digital interface (SERIN, CLK, LE). The serial control interrface is
activated when P/S is kept high. The 6-bit serial word must be loaded MSB first. The positive-edge sensitive CLK and
LE requires clean transitions. If mechanical switches are used, sufficient debouncing should be provided. When LE is
high, 6-bit data in the serial input register is transferred to the attenuator. When LE is high CLK is masked to prevent
data transition during output loading.
When P/S is low, 3-wire SPI interface inputs (SERIN, CLK, LE) are disabled and the input register is loaded with
parallel digital inputs (D0-D5). When LE is high, 6-bit parallel data changes the state of the part per truth table.
For all modes of operations, the DVGA state will stay constant while LE is kept low.
Parameter
Typ.
Min. serial period, tSCK
100 ns
Control set-up time, tCS
20 ns
Control hold-time, tCH
20 ns
LE setup-time, tLN
10 ns
Min. LE pulse width, tLEW
10 ns
Min LE pulse spacing, tLES
630 ns
Serial clock hold-time from LE, tCKN
10 ns
Hold Time, tPH.
0 ns
Latch Enable Minimum Width, tLEN
10 ns
Setup Time, tPS
2 ns
Timing Diagram (Latched Parallel Mode)
Parallel Mode
(Direct Parallel Mode & Latched Parallel Mode)
Note: The parallel mode is enabled when P/S is set to low.
Direct Parallel Mode - The attenuation state is changed by the control voltage inputs D0-D5 directly. The LE (Latch
Enable) must be at a logic high at all times to control the attenuator in this manner.
Latched Parallel Mode - The attenuation state is selected using the control voltage inputs D0-D5 and set while the
LE is in the Low state. The attenuator will not change state while LE is Low. Once all Control Voltage Inputs are at the
desired states the LE is pulsed. See timing diagram above for reference.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
12 - 6
HMC742LP5E
v05.0610
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL
VARIABLE GAIN AMPLIFIER, 70 MHz - 4 GHz
PUP Truth Table
Power-Up States
If LE is set to logic LOW at power-up, the logic state of
PUP1 and PUP2 determines the power-up state of the
part per PUP truth table. If the LE is set to logic HIGH
at power-up, the logic state of D0-D5 determines the
power-up state of the part per truth table. The DVGA
latches in the desired power-up state approximately
200 ms after power-up.
Power-On Sequence
VARIABLE GAIN AMPLIFIERS - DIGITAL - SMT
12
12 - 7
The ideal power-up sequence is: GND, Vdd, digital
inputs, RF inputs. The relative order of the digital
inputs are not important as long as they are powered
after Vdd / GND
Absolute Maximum Ratings
RF Input Power at Max Gain
[1]
Bias Voltage (Vdd)
5.6V
Collector Bias Voltage (Vcc)
5.5V
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C) [2]
1.2 W
Thermal Resistance [3]
75.6 °C/W
-65 to +150 °C
-40 to +85 °C
[1] The maximum RF input power increases by the same amount
the gain is reduced. The maximum input power at any state is no
more than 28 dBm.
[2] This value does not include the RF power dissipation in the
attenuator. The loss in the attenuator depends on the state of
the attenuator. The loss in the attenuator should be included to
determine the total power dissipation in the part.
[3] This value does not include the RF power dissipation in the
attenuator. The thermal resistance at different states of the
attenuator can be determined based on note [2]
Bias Voltage
Vdd (V)
PUP2
Gain Relative to Maximum
Gain
0
0
0
-31.5
0
1
0
-24
0
0
1
-16
0
1
1
Insertion Loss
1
X
X
0 to -31.5 dB
Note: The logic state of D0 - D5 determines the
power-up state per truth table shown below when LE
is high at power-up.
Control Voltage Input
17.5 dBm (T = +85 °C)
-0.5 to Vdd +0.5V
Operating Temperature
PUP1
Truth Table
Digital Inputs (Reset, Shift Clock,
Latch Enable & Serial Input)
Storage Temperature
LE
Idd (Typ.) (mA)
+5.0
2
Vs (V)
Is (mA)
+5.0
150
Gain
Relative to
Maximum
Gain
D5
D4
D3
D2
D1
D0
High
High
High
High
High
High
0 dB
High
High
High
High
High
Low
-0.5 dB
High
High
High
High
Low
High
-1 dB
High
High
High
Low
High
High
-2 dB
High
High
Low
High
High
High
-4 dB
High
Low
High
High
High
High
-8 dB
Low
High
High
High
High
High
-16 dB
Low
Low
Low
Low
Low
Low
-31.5 dB
Any combination of the above states will provide a reduction in
gain approximately equal to the sum of the bits selected.
Control Voltage Table
State
Vdd = +3V
Vdd = +5V
Low
0 to 0.5V @