0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
AD261AND-2

AD261AND-2

  • 厂商:

    AD(亚德诺)

  • 封装:

    DIP22

  • 描述:

    DGTL ISO 1.75KV GEN PURP 22DIP

  • 数据手册
  • 价格&库存
AD261AND-2 数据手册
a FEATURES Isolation Test Voltage: To 3.5 kV rms Five Isolated Logic Lines: Available in Six I/O Configurations Logic Signal Bandwidth: 20 MHz (min) CMV Transient Immunity: 10 kV/ms min Waveform Edge Transmission Symmetry: 61 ns Field and System Output Enable/Three-State Functions Performance Rated Over –258C to +858C UL1950, IEC950, EN60950 Certification (VDE, CE, Pending) APPLICATIONS PLC/DCS Analog Input and Output Cards Communications Bus Isolation General Data Acquisition Applications IGBT Motor Drive Controls High Speed Digital I/O Ports High Speed, Logic Isolator AD261 FUNCTIONAL BLOCK DIAGRAM F0 THR STA EETE LINE 0 THR STA EETE LINE 1 THR STA EETE LINE 2 F1 F2 LATCH D 2 S1 E LATCH D 3 S2 E LINE 3 EETHRATE ST 4 S3 LINE 4 EETHRATE ST 5 S4 6 ENABLESYS 7 +5V dcSYS 8 5V RTNSYS E LATCH D F4 S0 E LATCH D F3 LATCH D E ENABLEFLD 17 GENERAL DESCRIPTION The AD261 is designed to isolate five digital control signals to/from a microcontroller and its related field I/O components. Six models allow all I/O combinations from five input lines to five output lines, including combinations in between. Every AD261 effectively replaces up to five opto-isolators. Each line of the AD261 has a bandwidth of 20 MHz (min) with a propagation delay of only 14 ns, which allows for extremely fast data transmission. Output waveform symmetry is maintained to within ± 1 ns of the input so the AD261 can be used to accurately isolate time-based PWM signals. All field or system output pins of the AD261 can be set to a high resistance three-state level by use of the two enable pins. A field output three-stated offers a convenient method of presetting logic levels at power-up by use of pull-up/down resistors. System side outputs being three-stated allows for easy multiplexing of multiple AD261s. The isolation barrier of the AD261 B Grade is 100% tested as high as 3.5 kV rms (system to field). The barrier design also provides excellent common-mode transient immunity from 10 kV/µs common-mode voltage excursions of field side terminals relative to the system side, with no false output triggering on either side. Each output is updated within nanoseconds by input logic transitions, the AD261 also has a continuous output update feature that automatically updates each output based on the dc level of the input. This guarantees the output is always valid 10 µs after a fault condition or after the power-up reset interval. +5V dcFLD 16 5V RTNFLD 15 +5V dc +5V dc 5Vdc RTN 5Vdc RTN FIELD SYSTEM TYPICAL MODEL (AD261-2) PRODUCT HIGHLIGHTS Six Isolated Logic Line I/O Configurations Available: The AD261 is available in six pin-compatible versions of I/O configurations to meet a wide variety of requirements. Wide Bandwidth with Minimal Edge Error: The AD261 affords extremely fast isolation of logic signals due to its 20 MHz bandwidth and 14 ns propagation delay. It maintains a waveform input-to-output edge transition error of typically less than ± 1 ns (total) for positive vs. negative transition. 3.5 kV rms Test Voltage Isolation Rating: The AD261 B Grade is rated to operate at 1.25 kV rms and is 100% production tested at 3.5 kV rms, using a standard ADI test method. High Transient Immunity: The AD261 rejects commonmode transients slewing at up to 10 kV/µs without false triggering or damage to the device. (Continued on page 5) REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1997 AD261–SPECIFICATIONS (Typical at T = +258C, +5 V dc A Parameter INPUT CHARACTERISTICS Threshold Voltage Positive Transition (VT+) Negative Transition (VT–) Hysteresis Voltage (VH) Input Capacitance (CIN) Input Bias Current (IIN) OUTPUT CHARACTERISTICS Output Voltage1 High Level (VOH) Low Level (VOL) Output Three-State Leakage Current SYS, +5 V dcFLD, tRR = 50 ns max unless otherwise noted) Conditions Min Typ Max Units +5 V dcSYS = 4.5 V +5 V dcSYS = 5.5 V +5 V dcSYS = 4.5 V +5 V dcSYS = 5.5 V +5 V dcSYS = 4.5 V +5 V dcSYS = 5.5 V 2.0 3.0 0.9 1.2 0.4 0.5 2.7 3.2 1.8 2.2 0.9 1.0 5 0.5 3.15 4.2 2.2 3.0 1.4 1.5 V V V V V V pF µA Per Input +5 V dcSYS = 4.5 V, |IO| = 0.02 mA +5 V dcSYS = 4.5 V, |IO| = 4 mA +5 V dcSYS = 4.5 V, |IO| = 0.02 mA +5 V dcSYS = 4.5 V, |IO| = 4 mA ENABLESYS/FLD @ Logic Low/High Level Respectively 4.4 3.7 50% Duty Cycle, +5 V dcSYS = 5 V tPHL vs. tPLH 20 0.1 0.4 0.5 V V V V µA 1 DYNAMIC RESPONSE (Refer to Figure 2) Max Logic Signal Frequency (fMIN) Waveform Edge Symmetry Error (tERROR) Logic Edge Propagation Delay (tPHL, tPLH) Minimum Pulsewidth (tPWMIN) Max Output Update Delay on Fault or After Power-Up Reset Interval (≈ 30 µs)2 ISOLATION BARRIER RATING3 Operating Isolation Voltage (VCMV) Isolation Rating Test Voltage (VCMV TEST)4 Transient Immunity (VTRANSIENT) Isolation Mode Capacitance (CISO) Capacitive Leakage Current (ILEAD) POWER SUPPLY Supply Voltage (+5 V dcSYS and +5 V dcFLD) Power Dissipation Capacitance Quiescent Supply Current Supply Current ±1 14 25 25 µs 12 AD261A AD261B AD261A AD261B 375 1250 1750 3500 10,000 Total Capacitance, All Lines 240 V rms @ 60 Hz Rated Performance Operating Effective, per Input, Either Side Effective per Output, Either Side—No Load Each, +5 V dcSYS & FLD All Lines @ 10 MHz (Sum of +5 V dcSYS & FLD) TEMPERATURE RANGE Rated Performance (TA)5 Storage (TSTG) 9 4.5 4.0 15 2 V rms V rms V rms V rms V/µs pF µA rms 5.5 5.75 V dc V dc pF pF mA mA +85 +85 °C °C 8 28 4 18 –25 –40 MHz ns ns ns NOTES 1 For best performance, bypass +5 V dc supplies to com., at or near the device (0.01 µF). +5 V dc supplies are also internally bypassed with 0.05 µF. 2 As the supply voltage is applied to either side of the AD261, the internal circuitry will go into a power-up reset mode (all lines disabled) for about 30 µs after the point where +5 V dc SYS & FLD passes above 3.3 V. 3 “Operating” isolation voltage is derived from the Isolation Test Voltage in accordance with such methods as found in VDE-0883 wherein a device will be “hi-pot” tested at twice the operating voltage, plus one thousand volts. Partial discharge testing, with an acceptance threshold of 80 pC of discharge may be considered the same as a hi-pot test (but nondestructive). 4 Partial Discharge at 80 pC THLD. 5 Supply Current will increase slightly, but otherwise the unit will function within specification to –40°C. Specifications are subject to change without notice. –2– REV. 0 AD261 ABSOLUTE MAXIMUM RATINGS* Parameter Conditions Supply Voltage (+5 V dcSYS & FLD) DC Input Voltage (VIN MAX) DC Output Voltage (VOUT MAX) Clamp Diode Input Current (IIK) Clamp Diode Output Current (IOK) Output DC Current, per Pin (IOUT) DC Current, VCC or GND (ICC or IGND) Storage Temperature (TSTG) Lead Temperature (Soldering, 10 sec) Electrostatic Protection (VESD) Referred to +5 V dcSYS & FLD and 5 V RTNSYS & FLD Respectively Referred to +5 V RTNSYS & FLD and 5 V dcSYS & FLD Respectively For VI < –0.5 V or VI > 5 V RTNSYS & FLD +0.5 V For VO < –0.5 V or VO > 5 V RTNSYS & FLD +0.5 V Per MIL-STD-883, Method 3015 Min Typ Max Units –0.5 –0.5 –0.5 –25 –25 –25 –50 –40 +6.0 +0.5 +0.5 +25 +25 +25 +50 +85 +300 V V V mA mA mA mA °C °C kV 4.5 5 *Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may effect device reliability. I/O CONFIGURATIONS AVAILABLE PIN CONFIGURATION The AD261 is available in several configurations. The choice of model is determined by the desired number of input vs. output lines. All models have identical footprints with the power and enable pins always being in the same locations. 1 2 3 4 5 SYSTEM 6 7 8 PIN FUNCTION DESCRIPTIONS Pin Mnemonic 1–5* 6 7 8 9–14 15 16 17 18–22* S0 Through S4 ENABLESYS +5 V dcSYS 5 V RTNSYS Function Digital Xmt or Rcv from F0 Through F4 System Output Enable/Three-State System Power Supply (+5 V dc Input) System Power Supply Common Not Present On Unit 5 V RTNFLD Field Power Supply Common Field Power Supply (+5 V Input) +5 V dcFLD Field Output Enable/Three-State ENABLEFLD F0 Through F4 Digital Xmt or Rcv from S0 Through S4 S0 S1 S2 S3 S4 ENABLESYS +5V dcSYS 5V RTNSYS BOTTOM VIEW 15 16 17 FIELD 18 19 20 21 22 5V RTNFLD +5V dcFLD ENABLEFLD F0 F1 F2 F3 F4 *Function of pin determined by model. Refer to Table I. ORDERING GUIDE Model Number Description Isolation Ratings Package Description Package Option AD261AND-0 AD261AND-1 AD261AND-2 AD261AND-3 AD261AND-4 AD261AND-5 0 Inputs, 5 Outputs 1 Input, 4 Outputs 2 Inputs, 3 Outputs 3 Inputs, 2 Outputs 4 Inputs, 1 Output 5 Inputs, 0 Outputs 1.75 kV rms 1.75 kV rms 1.75 kV rms 1.75 kV rms 1.75 kV rms 1.75 kV rms Plastic DIP Plastic DIP Plastic DIP Plastic DIP Plastic DIP Plastic DIP ND-22A ND-22A ND-22A ND-22A ND-22A ND-22A AD261BND-0 AD261BND-1 AD261BND-2 AD261BND-3 AD261BND-4 AD261BND-5 0 Inputs, 5 Outputs 1 Input, 4 Outputs 2 Inputs, 3 Outputs 3 Inputs, 2 Outputs 4 Inputs, 1 Output 5 Inputs, 0 Outputs 3.5 kV rms 3.5 kV rms 3.5 kV rms 3.5 kV rms 3.5 kV rms 3.5 kV rms Plastic DIP Plastic DIP Plastic DIP Plastic DIP Plastic DIP Plastic DIP ND-22A ND-22A ND-22A ND-22A ND-22A ND-22A CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD261 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. 0 –3– WARNING! ESD SENSITIVE DEVICE AD261 AD261 CONFIGURATIONS AD261-0 THR STA EETE LINE 0 THR STA EETE LINE 1 THR STA EETE LINE 2 THR STA EETE LINE 3 THR STA EETE LINE 4 F0 AD261-2 LATCH F2 D F1 2 S1 E F4 5V RTNFLD 15 THR STA EETE LINE 2 F2 3 S2 D E LATCH D F3 4 S3 D LATCH D LATCH D F4 5 S4 6 ENABLESYS 7 +5V dcSYS +5V dc +5V dc 5V dc RTN 5V dc RTN FIELD 8 +5V dcFLD 16 5V RTNSYS 5V RTNFLD 15 THR STA EETE LINE 1 THR STA EETE LINE 2 4 S3 LINE 4 EETHRATE ST 5 S4 6 ENABLESYS 7 +5V dcSYS 8 5V RTNSYS 5V dc RTN 5V dc RTN THR STA EETE LINE 3 F0 S0 D 2 F1 S1 E 3 D SYSTEM LATCH D F4 E 5V RTNFLD 15 +5V dc 5V dc RTN FIELD THR STA EETE LINE 1 LATCH D F3 4 S3 D EETHRATE ST 5 LATCH D F4 S4 E 5V dc RTN S0 LATCH D ENABLESYS 7 +5V dcSYS +5V dcFLD 16 8 5V RTNSYS 5V RTNFLD 15 +5V dc 5V dc RTN FIELD SYSTEM –4– 2 S1 E LINE 2 EETHRATE ST 3 S2 LINE 3 EETHRATE ST 4 S3 LINE 4 EETHRATE ST 5 S4 6 ENABLESYS 7 +5V dcSYS 8 5V RTNSYS ENABLEFLD 17 6 +5V dc LATCH D E E ENABLEFLD 17 +5V dcFLD 16 LINE 0 E E LINE 4 THR STA EETE LATCH D F2 S2 E LATCH F3 S2 AD261-3 LATCH F2 3 +5V dc E D S1 EETHRATE ST FIELD LATCH F1 2 LINE 3 +5V dc LATCH LINE 0 LATCH D ENABLEFLD 17 SYSTEM THR STA EETE LATCH D E AD261-1 F0 S0 E E E LATCH D E E E ENABLEFLD 17 +5V dcFLD 16 LINE 1 LATCH LATCH F3 THR STA EETE E LATCH F1 LINE 0 F0 S0 D THR STA EETE +5V dc 5V dc RTN SYSTEM REV. 0 AD261 AD261 CONFIGURATIONS AD261-4 THR STA EETE F0 LINE 0 D LINE 1 E LATCH F2 D LINE 2 E LATCH F3 D LATCH D F0 S0 E LATCH F1 AD261-5 LATCH D LINE 3 E EETHRATE ST 2 EETHRATE ST 3 EETHRATE ST 4 EETHRATE ST 5 LATCH D F1 S1 D E LINE 4 5V RTNFLD 15 +5V dc 5V dc RTN FIELD LATCH D F2 S2 S3 LATCH D F3 EETHRATE ST 2 S1 LINE 2 EETHRATE ST 3 S2 LINE 3 EETHRATE ST 4 S3 LINE 4 EETHRATE ST 5 S4 6 ENABLESYS 7 +5V dcSYS 8 5V RTNSYS E LATCH D F4 S4 E 6 ENABLESYS 7 +5V dcSYS +5V dc 5V dc RTN 8 S0 ENABLEFLD 17 +5V dcFLD 16 5V RTNSYS 5V RTNFLD 15 +5V dc 5V dc RTN FIELD SYSTEM +5V dc 5V dc RTN SYSTEM GENERAL ATTRIBUTES (Continued from page 1) Field and System Enable Functions: Both the isolated and nonisolated sides of the AD261 have ENABLE pins that threestate all outputs. Upon reenabling these pins, all outputs are updated to reflect the current input logic level. CE Certifiable: Simply by adding the external bypass capacitors at the supply pins, the AD261 can attain CE certification in most applications (to the EMC directive) and conformance to the low voltage (safety) directive is assured by the EN60950 certification. Table I. Model Number and Pinout Function Pin AD261-0 AD261-1 AD261-2 AD261-3 AD261-4 AD261-5 1 2 3 4 5 6 7 8 9–14 15 16 17 18 19 20 21 22 S0 (Xmt) S1 (Xmt) S2 (Xmt) S3 (Xmt) S4 (Xmt) ENABLESYS +5 V dcSYS 5 V RTNSYS S0 (Xmt) S1 (Xmt) S2 (Xmt) S3 (Xmt) S4 (Rcv) * * * 5 V RTNFLD +5 V dcFLD ENABLEFLD F0 (Rcv) F1 (Rcv) F2 (Rcv) F3 (Rcv) F4 (Rcv) * * * F0 (Rcv) F1 (Rcv) F2 (Rcv) F3 (Rcv) F4 (Xmt) S0 (Xmt) S0 (Xmt) S1 (Xmt) S1 (Xmt) S2 (Xmt) S2 (Rcv) S3 (Rcv) S3 (Rcv) S4 (Rcv) S4 (Rcv) * * * * * * Not Present * * * * * * F0 (Rcv) F0 (Rcv) F1 (Rcv) F1 (Rcv) F2 (Rcv) F2 (Xmt) F3 (Xmt) F3 (Xmt) F4 (Xmt) F4 (Xmt) S0 (Xmt) S1 (Rcv) S2 (Rcv) S3 (Rcv) S4 (Rcv) * * * S0 (Rcv) S1 (Rcv) S2 (Rcv) S3 (Rcv) S4 (Rcv) * * * * * F0 (Rcv) F1 (Xmt) F2 (Xmt) F3 (Xmt) F4 (Xmt) * * * F0 (Xmt) F1 (Xmt) F2 (Xmt) F3 (Xmt) F4 (Xmt) *Pin function is the same on all models, as shown in the AD261-0 column. REV. 0 LINE 1 E ENABLEFLD 17 +5V dcFLD 16 EETHRATE ST E LATCH F4 LINE 0 E The AD261 provides five HCMOS compatible isolated logic lines with ≥ 10 kV/µs common-mode transient immunity. The case design and pin arrangement provides greater than 18 mm spacing between field and system side conductors, providing CSA/IS and IEC creepage spacing consistent with 750 V mains isolation. The five unidirectional logic lines have six possible combinations of “ins” and “outs,” or transmitter/receiver pairs; hence there are six AD261 part configurations (see Table I). Each 20 MHz logic line has a Schmidt trigger input and a threestate output (on the other side of the isolation barrier) and 14 ns of propagation delay. A single enable pin on either side of the barrier causes all outputs on that side to go three-state and all inputs (driven pins) to ignore their inputs and retain their last known state. Note: All unused logic inputs (1–5) should be tied either high or low, but not left floating. Edge “fidelity,” or the difference in propagation time for rising and falling edges, is typically less than ± 1 ns. Power consumption, unlike opto-isolators, is a function of operating frequency. Each logic line barrier driver requires about 160 µA per MHz and each receiver 40 µA per MHz plus, of course, 4 mA total idle current (each side). The supply current diminishes slightly with increasing temperature (about –0.03%/°C). The total capacitance spanning the isolation barrier is less than 10 pF. The minimum period of a pulse that can be accurately coupled across the barrier is about 25 ns. Therefore the maximum square-wave frequency of operation is 20 MHz. –5– AD261 SCHMITT TRIGGER BUFFER DATA IN DRIVER OUT D Q ENABLE ENABLE G GATED TRANSPARENT LATCH CONTINUOUS UPDATE CIRCUIT Figure 1. Simplified Block Diagram Recovery time from a fault condition or at power-up is thus between 5 µs and 10 µs. POSITIVE GOING INPUT THRESHOLD NEGATIVE GOING INPUT THRESHOLD INPUT OUTPUT 3.5kV DATA OUTPUT ISOLATION BARRIER RECEIVER BUFFER C3212–8–10/97 Logic information is sent across the barrier as “set-hi/set-lo” data that is derived from logic level transitions of the input. At power-up or after a fault condition, an output might not represent the state of the respective channel input to the isolator. An internal circuit operates in the background which interrogates all inputs about every 5 µs and in the absence of logic transitions, sends appropriate “set-hi” or “set-lo” data across the barrier. HYSTERESIS 63% 37% t ff PROPAGATION DELAY tPD = 14ns BUFFER DELAY LINE BUFFER 100V 14ns 5pF INPUT CAPACITANCE 5pF OUTPUT CAPACITANCE t rr = tff = 100V x CTOTAL OUTPUT CAPACITANCE >0.5ns – NO LOAD = 5.5ns INTO 50pF TOTAL DELAY = t PD 1 t rr = 13ns (NO LOAD), 18ns (50pF LOAD) Figure 2. Typical Timing and Delay Models OUTLINE DIMENSIONS Dimensions shown in inches and (mm). 22-Pin Plastic DIP (ND-22A) 0.550 (13.97) MAX 1.500 (38.1) MAX 0.440 (11.18) MAX SIDE VIEW 1 0.160 (4.06) 0.140 (3.56) 15 8 22 0.020 3 0.010 (0.508 3 0.254) 16 PLACES 0.050 (1.27) END VIEW PRINTED IN U.S.A. EFFECTIVE CIRCUIT MODEL 0.100 (2.54) 0.350 (8.89) 0.075 (1.91) PIN 1 0.250 (6.35) SYSTEM BOTTOM VIEW 0.738* (18.75) FIELD 0.050 (1.27) 0.650 (16.51) *CREEPAGE PATH (SUBTRACT APPROXIMATELY 0.079 (2mm) FOR SOLDER PAD RADII ON PC BOARD. THIS SPACING SUPPORTS THE INTRINSICALLY SAFE RATING OF 750V. –6– REV. 0
AD261AND-2 价格&库存

很抱歉,暂时无法提供与“AD261AND-2”相匹配的价格&库存,您可以联系我们找货

免费人工找货