AD8001ARZ-REEL

a 800 MHz, 50 mW Current Feedback Amplifier AD8001 FEATURES Excellent Video Specifications (RL = 150
, G = +2) Gain Flatness 0.1 dB to 100 MHz 0.01% Differential Gain Error 0.025 Differential Phase Error Low Power 5.5 mA Max Power Supply Current (55 mW) High Speed and Fast Settling 880 MHz, –3 dB Bandwidth (G = +1) 440 MHz, –3 dB Bandwidth (G = +2) 1200 V/s Slew Rate 10 ns Settling Time to 0.1% Low Distortion –65 dBc THD, fC = 5 MHz 33 dBm Third Order Intercept, F1 = 10 MHz –66 dB SFDR, f = 5 MHz High Output Drive 70 mA Output Current Drives Up to 4 Back-Terminated Loads (75
Each) While Maintaining Good Differential Gain/Phase Performance (0.05%/0.25) APPLICATIONS A-to-D Drivers Video Line Drivers Professional Cameras Video Switchers Special Effects RF Receivers FUNCTIONAL BLOCK DIAGRAMS 8-Lead PDIP (N-8), CERDIP (Q-8) and SOIC (R-8) NC 1 8 –IN 2 7 V+ +IN 3 6 OUT 5 NC V– 4 5-Lead SOT-23-5 (RT-5) AD8001 NC VOUT 1 AD8001 5 +VS 4 –IN –VS 2 +IN 3 NC = NO CONNECT transimpedance linearization circuitry. This allows it to drive video loads with excellent differential gain and phase performance on only 50 mW of power. The AD8001 is a current feedback amplifier and features gain flatness of 0.1 dB to 100 MHz while offering differential gain and phase error of 0.01% and 0.025°. This makes the AD8001 ideal for professional video electronics such as cameras and video switchers. Additionally, the AD8001’s low distortion and fast settling make it ideal for buffer high speed A-to-D converters. The AD8001 offers low power of 5.5 mA max (VS = ± 5 V) and can run on a single +12 V power supply, while being capable of delivering over 70 mA of load current. These features make this amplifier ideal for portable and battery-powered applications where size and power are critical. GENERAL DESCRIPTION The AD8001 is a low power, high speed amplifier designed to operate on ± 5 V supplies. The AD8001 features unique The outstanding bandwidth of 800 MHz along with 1200 V/µs of slew rate make the AD8001 useful in many general-purpose high speed applications where dual power supplies of up to ± 6 V and single supplies from 6 V to 12 V are needed. The AD8001 is available in the industrial temperature range of –40°C to +85°C. 9 VS = 5V RFB = 820
6 GAIN – dB 3 G = +2 RL = 100
0 –3 VS = 5V RFB = 1k
–6 –9 –12 10M 100M FREQUENCY – Hz 1G Figure 1. Frequency Response of AD8001 Figure 2. Transient Response of AD8001; 2 V Step, G = +2 REV. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved. AD8001–SPECIFICATIONS (@ T = + 25C, V = 5 V, R = 100
, unless otherwise noted.) A Model DYNAMIC PERFORMANCE –3 dB Small Signal Bandwidth, N Package R Package RT Package S L AD8001A Typ Max Conditions Min Unit G = +2, < 0.1 dB Peaking, R F = 750 Ω G = +1, < 1 dB Peaking, RF = 1 kΩ G = +2, < 0.1 dB Peaking, R F = 681 Ω G = +1, < 0.1 dB Peaking, R F = 845 Ω G = +2, < 0.1 dB Peaking, R F = 768 Ω G = +1, < 0.1 dB Peaking, RF = 1 kΩ 350 650 350 575 300 575 440 880 440 715 380 795 MHz MHz MHz MHz MHz MHz G = +2, R F = 750 Ω G = +2, R F = 681 Ω G = +2, R F = 768 Ω G = +2, VO = 2 V Step G = –1, VO = 2 V Step G = –1, VO = 2 V Step G = +2, VO = 2 V Step, RF = 649 Ω 85 100 120 800 960 110 125 145 1000 1200 10 1.4 MHz MHz MHz V/µs V/µs ns ns –65 dBc 2.0 2.0 18 0.01 0.025 33 14 –66 nV/√Hz pA/√Hz pA/√Hz % Degree dBm dBm dB Bandwidth for 0.1 dB Flatness N Package R Package RT Package Slew Rate Settling Time to 0.1% Rise and Fall Time NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error Third Order Intercept 1 dB Gain Compression SFDR fC = 5 MHz, VO = 2 V p-p G = +2, RL = 100 Ω f = 10 kHz f = 10 kHz, +In –In NTSC, G = +2, R L = 150 Ω NTSC, G = +2, R L = 150 Ω f = 10 MHz f = 10 MHz f = 5 MHz DC PERFORMANCE Input Offset Voltage 2.0 2.0 10 5.0 TMIN –TMAX Offset Drift –Input Bias Current TMIN –TMAX +Input Bias Current Open-Loop Transresistance INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio Offset Voltage –Input Current +Input Current OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio –Input Current +Input Current 3.0 TMIN –TMAX VO = ± 2.5 V TMIN –TMAX 250 175 +Input –Input +Input 0.025 0.04 5.5 9.0 25 35 6.0 10 900 10 50 1.5 3.2 VCM = ± 2.5 V VCM = ± 2.5 V, TMIN –TMAX VCM = ± 2.5 V, TMIN –TMAX 50 R L = 150 Ω R L = 37.5 Ω 2.7 50 85 54 0.3 0.2 60 50 MΩ Ω pF ±V 1.0 0.7 5.0 75 56 0.5 0.1 dB µA/V µA/V ±V mA mA 3.1 70 110 ± 3.0 TMIN –TMAX +VS = +4 V to +6 V, –VS = –5 V –VS = – 4 V to – 6 V, +VS = +5 V TMIN –TMAX TMIN –TMAX mV mV µV/°C ±µA ±µA ±µA ±µA kΩ kΩ ± 6.0 5.5 2.5 0.5 V mA dB dB µA/V µA/V Specifications subject to change without notice. –2– REV. D AD8001 ABSOLUTE MAXIMUM RATINGS 1 MAXIMUM POWER DISSIPATION Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Internal Power Dissipation @ 25°C2 PDIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3 W SOIC (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W 8-Lead CERDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 W SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ± VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 1.2 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C Operating Temperature Range (A Grade) . . . –40°C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C The maximum power that can be safely dissipated by the AD8001 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. 2.0 MAXIMUM POWER DISSIPATION – W NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead PDIP Package: θJA = 90°C/W 8-Lead SOIC Package: θJA = 155°C/W 8-Lead CERDIP Package: θJA = 110°C/W 5-Lead SOT-23-5 Package: θJA = 260°C/W While the AD8001 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves. 8-LEAD PDIP PACKAGE TJ = +150C 8-LEAD CERDIP PACKAGE 1.5 8-LEAD SOIC PACKAGE 1.0 0.5 5-LEAD SOT-23-5 PACKAGE 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 AMBIENT TEMPERATURE – C 70 80 90 Figure 3. Plot of Maximum Power Dissipation vs. Temperature ORDERING GUIDE Model Temperature Range Package Description Package Option Branding AD8001AN AD8001AQ AD8001AR AD8001AR-REEL AD8001AR-REEL7 AD8001ART-REEL AD8001ART-REEL7 AD8001ACHIPS 5962-9459301MPA* –40°C to +85°C –55°C to +125°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –40°C to +85°C –55°C to +125°C 8-Lead PDIP 8-Lead CERDIP 8-Lead SOIC 13" Tape and REEL 7" Tape and REEL 13" Tape and REEL 7" Tape and REEL Die Form 8-Lead CERDIP N-8 Q-8 R-8 R-8 R-8 RT-5 RT-5 HEA HEA * Q-8 Standard Military Drawing Device. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8001 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. REV. D –3– WARNING! ESD SENSITIVE DEVICE AD8001–Typical Performance Characteristics 806
0.001F +VS VOUT TO TEKTRONIX CSA 404 COMM. SIGNAL ANALYZER 0.1F 806
AD8001 0.1F VIN HP8133A PULSE GENERATOR 50
RL = 100
0.001F TR/TF = 50ps –VS 400mV 5ns TPC 4. 2 V Step Response, G = +2 TPC 1. Test Circuit , Gain = +2 909
0.001F +VS 0.1F VOUT TO TEKTRONIX CSA 404 COMM. SIGNAL ANALYZER AD8001 0.1F VIN LeCROY 9210 PULSE GENERATOR TR/TF = 350ps TPC 2. 1 V Step Response, G = +2 0.5V 50
RL = 100
0.001F –VS TPC 5. Test Circuit, Gain = +1 5ns TPC 3. 2 V Step Response, G = +1 TPC 6. 100 mV Step Response, G = +1 –4– REV. D AD8001 1000 9 VS = 5V RFB = 820
G = +2 RL = 100
GAIN – dB 3 0 VS = 5V RFB = 1k
–3 VS = 5V RL = 100
G = +2 800 –3dB BANDWIDTH – MHz 6 –6 600 N PACKAGE 400 R PACKAGE 200 –9 –12 10M 100M FREQUENCY – Hz 0 500 1G TPC 7. Frequency Response, G = +2 0.1 0 HARMONIC DISTORTION – dBc OUTPUT – dB –0.5 900 1000 5V SUPPLIES RF = 750
–0.3 –0.4 800 –50 RF = 698
–0.2 700 TPC 10. –3 dB Bandwidth vs. RF RF = 649
–0.1 600 VALUE OF FEEDBACK RESISTOR (RF) –
G = +2 RL = 100
VIN = 50mV –0.6 –0.7 –60 VOUT = 2V p-p RL = 100
G = +2 –70 SECOND HARMONIC –80 THIRD HARMONIC –90 –0.8 –0.9 1M 10M FREQUENCY – Hz –100 10k 100M DIFF PHASE – Degrees –50 5V SUPPLIES VOUT = 2V p-p RL = 1k
G = +2 –70 SECOND HARMONIC 10M 100M 0.08 0.06 G = +2 RF = 806
2 BACK TERMINATED LOADS (75
) 0.04 0.02 0.00 1 BACK TERMINATED LOAD (150
) –80 0.02 –90 DIFF GAIN – % HARMONIC DISTORTION – dBc 1M FREQUENCY – Hz TPC 11. Distortion vs. Frequency, RL = 100 Ω TPC 8. 0.1 dB Flatness, R Package (for N Package Add 50 Ω to RF) –60 100k THIRD HARMONIC –100 –110 10k 0.00 –0.01 –0.02 100k 1M FREQUENCY – Hz 10M 0 100M IRE 100 TPC 12. Differential Gain and Differential Phase TPC 9. Distortion vs. Frequency, RL = 1 kΩ REV. D 1 AND 2 BACK TERMINATED LOADS (150
AND 75
) 0.01 –5– AD8001 5 1000 0 N PACKAGE 900 VIN = –26dBm –10 GAIN – dB –3dB BANDWIDTH – MHz –5 RF = 909
–15 –20 –25 800 R PACKAGE 700 VIN = 50mV RL = 100
G = +1 600 –30 –35 100M 1G 500 600 3G FREQUENCY – Hz TPC 13. Frequency Response, G = +1 –40 0 RF = 649
–50 –1 DISTORTION – dBc RF = 953
–2 OUTPUT – dB 1100 TPC 16. –3 dB Bandwidth vs. RF, G = +1 1 –3 –4 –5 900 700 800 1000 VALUE OF FEEDBACK RESISTOR (RF) –
G = +1 RL = 100
VIN = 50mV –6 RL = 100
G = +1 VOUT = 2V p-p –60 SECOND HARMONIC –70 –80 THIRD HARMONIC –7 –90 –8 –9 2M 10M 100M FREQUENCY – Hz –100 10k 1G 100M 0 G = +1 RL = 1k
VOUT = 2V p-p –3 –60 –6 OUTPUT – dBV DISTORTION – dBc 10M 3 –40 –70 SECOND HARMONIC –80 THIRD HARMONIC –90 –9 –12 –15 –18 –21 –100 –110 10k 1M FREQUENCY – Hz TPC 17. Distortion vs. Frequency, RL = 100 Ω TPC 14. Flatness, R Package, G = +1 (for N Package Add 100 Ω to RF) –50 100k RL = 100
G = +1 –24 100k 1M FREQUENCY – Hz 10M –27 1M 100M TPC 15. Distortion vs. Frequency, RL = 1 kΩ 10M FREQUENCY – Hz 100M TPC 18. Large Signal Frequency Response, G = +1 –6– REV. D AD8001 45 2.2 40 2.0 30 INPUT OFFSET VOLTAGE – mV G = +100 35 RF = 1000
25 GAIN – dB 20 G = +10 15 RF = 470
10 5 0 –5 RL = 100
–10 –15 1.8 1.6 DEVICE NO. 2 1.4 1.2 1.0 DEVICE NO. 3 0.8 0.6 –20 –25 DEVICE NO. 1 1M 10M 100M FREQUENCY – Hz 0.4 –60 1G 3.35 5.8 3.25 5.6 3.15 +VOUT RL = 150
VS = 5V 3.05 | –VOUT | 2.95 2.85 +VOUT RL = 50
VS = 5V 2.75 2.55 –60 –40 –20 0 20 40 60 JUNCTION TEMPERATURE – C 80 VS = 5V 5.0 4.8 5 125 4 120 SHORT CIRCUIT CURRENT – mA INPUT BIAS CURRENT – A 5.2 –40 –20 0 20 40 60 80 100 JUNCTION TEMPERATURE – C 120 140 TPC 23. Supply Current vs. Temperature 3 –IN 2 1 0 –1 +IN –2 SOURCE ISC 115 110 | SINK ISC | 105 100 95 90 –3 –40 –20 0 20 40 60 80 100 120 85 –60 140 JUNCTION TEMPERATURE – C –40 –20 0 20 40 60 JUNCTION TEMPERATURE – C 80 100 TPC 24. Short Circuit Current vs. Temperature TPC 21. Input Bias Current vs. Temperature REV. D 100 5.4 4.4 –60 100 TPC 20. Output Swing vs. Temperature –4 –60 80 4.6 | –VOUT | 2.65 –20 0 20 40 60 JUNCTION TEMPERATURE – C TPC 22. Input Offset vs. Temperature SUPPLY CURRENT – mA OUTPUT SWING – Volts TPC 19. Frequency Response, G = +10, G = +100 –40 –7– AD8001 6 1k 100 VS = 5V RL = 150
VOUT = 2.5V 4 ROUT –
TRANSRESISTANCE – k
5 3 –TZ 2 1 0 –60 1 G = +2 RF = 909
0.1 +TZ –40 10 –20 0 20 40 60 80 100 JUNCTION TEMPERATURE – C 120 0.01 10k 140 TPC 25. Transresistance vs. Temperature 100 100k 1M FREQUENCY – Hz 10M TPC 28. Output Resistance vs. Frequency 100 1 RF = 576
0 –1 10 10 NONINVERTING CURRENT VS = 5V RF = 649
–2 OUTPUT – dB INVERTING CURRENT VS = 5V NOISE CURRENT – pA/√Hz NOISE VOLTAGE – nV/√Hz 100M –3 –4 G = –1 RL = 100
VIN = 50mV RF = 750
–5 –6 –7 –8 VOLTAGE NOISE VS = 5V 1 10 100 1k FREQUENCY – Hz 1 100k 10k –9 1M 10M 100M FREQUENCY – Hz 1G TPC 29. –3 dB Bandwidth vs. Frequency, G = –1 TPC 26. Noise vs. Frequency –48 –52.5 –55.0 –49 –CMRR –PSRR –57.5 –50 PSRR – dB CMRR – dB –60.0 –51 +CMRR –52 –53 2.5V SPAN 3V SPAN –62.5 CURVES ARE FOR WORSTCASE CONDITION WHERE ONE SUPPLY IS VARIED WHILE THE OTHER IS HELD CONSTANT. –65.0 –67.5 –70.0 –54 –72.5 +PSRR –55 –56 –60 –75.0 –40 –20 0 20 40 60 80 100 JUNCTION TEMPERATURE – C 120 –77.5 –60 140 TPC 27. CMRR vs. Temperature –40 –20 0 20 40 60 JUNCTION TEMPERATURE – C 80 100 TPC 30. PSRR vs. Temperature –8– REV. D AD8001 30 –10 10 51
150
–20 VOUT 62
0 150
PSRR – dB CMRR – dB 910
CURVES ARE FOR WORSTCASE CONDITION WHERE ONE SUPPLY IS VARIED WHILE THE OTHER IS HELD CONSTANT. 20 910
VIN –30 –10 –PSRR –20 –30 –40 +PSRR –PSRR +PSRR –40 RF = 909
G = +2 –50 –50 –60 300k 1M 10M FREQUENCY – Hz 100M 1M 1G TPC 31. CMRR vs. Frequency 1G 10M 100M FREQUENCY – Hz TPC 34. PSRR vs. Frequency 1 RF = 549
0 –1 RF = 649
OUTPUT – dB –2 –3 G = –2 RL = 100
VIN = 50mVrms –4 –5 RF = 750
–6 –7 –8 10M 100M FREQUENCY – Hz 1G TPC 35. 2 V Step Response, G = –1 TPC 32. –3 dB Bandwidth vs. Frequency, G = –2 100 100 3 WAFER LOTS COUNT = 895 MEAN = 1.37 STD DEV = 1.13 MIN = –2.45 MAX = +4.69 90 80 70 90 80 CUMULATIVE 70 COUNT 60 50 FREQ DIST 40 40 30 30 20 20 10 10 0 –5 –4 –3 –2 –1 0 1 2 3 INPUT OFFSET VOLTAGE – mV 4 5 TPC 36. Input Offset Voltage Distribution TPC 33. 100 mV Step Response, G = –1 REV. D 60 50 –9– 0 PERCENT –9 1M AD8001 THEORY OF OPERATION A very simple analysis can put the operation of the AD8001, a current feedback amplifier, in familiar terms. Being a current feedback amplifier, the AD8001’s open-loop behavior is expressed as transimpedance, ∆VO/∆I–IN, or TZ. The open-loop transimpedance behaves just as the open-loop voltage gain of a voltage feedback amplifier, that is, it has a large dc value and decreases at roughly 6 dB/octave in frequency. Since the RIN is proportional to 1/gM, the equivalent voltage gain is just TZ × gM, where the gM in question is the transconductance of the input stage. This results in a low open-loop input impedance at the inverting input, a now familiar result. Using this amplifier as a follower with gain, Figure 4, basic analysis yields the following result. Considering that additional poles contribute excess phase at high frequencies, there is a minimum feedback resistance below which peaking or oscillation may result. This fact is used to determine the optimum feedback resistance, R F. In practice, parasitic capacitance at Pin 2 will also add phase in the feedback loop, so picking an optimum value for R F can be difficult. Figure 6 illustrates this problem. Here the fine scale (0.1 dB/ div) flatness is plotted versus feedback resistance. These plots were taken using an evaluation card which is available to customers so that these results may readily be duplicated. Achieving and maintaining gain flatness of better than 0.1 dB at frequencies above 10 MHz requires careful consideration of several issues. 0.1 TZ (S ) VO =G× VIN TZ (S ) + G × RIN + R1 R1 R2 RF = 698
–0.1 RIN = 1 / g M ≈ 50 Ω –0.2 OUTPUT – dB G = 1+ RF = 649
0 R1 G = +2 –0.3 RF = 750
–0.4 –0.5 R2 –0.6 RIN –0.7 VOUT –0.8 VIN –0.9 1M 10M FREQUENCY – Hz 100M Figure 6. 0.1 dB Flatness vs. Frequency Figure 4. Follower with Gain Recognizing that G × RIN