AD823AR

AD823AR

  • 厂商:

    AD(亚德诺)

  • 封装:

    SOIC-8

  • 描述:

    AD823AR

  • 数据手册
  • 价格&库存
AD823AR 数据手册
Dual, 16 MHz, Rail-to-Rail FET Input Amplifier AD823 Data Sheet CONNECTION DIAGRAM An offset voltage of 800 µV maximum, an offset voltage drift of 2 µV/°C, input bias currents below 25 pA, and low input voltage noise provide dc precision with source impedances up to a Gigaohm. It provides 16 MHz, −3 dB bandwidth, −108 dB THD @ 20 kHz, and a 22 V/µs slew rate with a low supply current of 2.6 mA per amplifier. The AD823 drives up to 500 pF of direct capacitive load as a follower and provides an output current of 15 mA, 0.5 V from the supply rails. This allows the amplifier to handle a wide range of load conditions. +VS 7 OUT2 +IN1 3 6 –IN2 –VS 4 5 +IN2 AD823 RL = 100kΩ CL = 50pF +VS = +3V G = +1 3V 500mV 00901-002 GND 200µs Figure 2. Output Swing, +VS = +3 V, G = +1 Battery-powered precision instrumentation Photodiode preamps Active filters 12-bit to 16-bit data acquisition systems Medical instrumentation 2 1 +VS = +5V G = +1 0 –1 OUTPUT (dB) The AD823 is a dual precision, 16 MHz, JFET input op amp that can operate from a single supply of 3.0 V to 36 V or from dual supplies of ±1.5 V to ±18 V. It has true single-supply capability with an input voltage range extending below ground in single-supply mode. Output voltage swing extends to within 50 mV of each rail for IOUT ≤ 100 µA, providing outstanding output dynamic range. 8 –IN1 2 Figure 1. 8-Lead PDIP and SOIC APPLICATIONS GENERAL DESCRIPTION OUT1 1 –2 –3 –4 –5 –6 –7 –8 1k 10k 100k 1M FREQUENCY (Hz) 10M 00901-003 Single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 3 V to 36 V High load drive Capacitive load drive of 500 pF, G = +1 Output current of 15 mA, 0.5 V from supplies Excellent ac performance on 2.6 mA/amplifier −3 dB bandwidth of 16 MHz, G = +1 350 ns settling time to 0.01% (2 V step) Slew rate of 22 V/µs Good dc performance 800 µV maximum input offset voltage 2 µV/°C offset voltage drift 25 pA maximum input bias current Low distortion: −108 dBc worst harmonic @ 20 kHz Low noise: 16 nV/√Hz @ 10 kHz No phase inversion with inputs to the supply rails 00901-001 FEATURES Figure 3. Small Signal Bandwidth, G = +1 This combination of ac and dc performance, plus the outstanding load drive capability, results in an exceptionally versatile amplifier for applications such as A/D drivers, high speed active filters, and other low voltage, high dynamic range systems. The AD823 is available over the industrial temperature range of −40°C to +85°C and is offered in both 8-lead PDIP and 8-lead SOIC packages. Rev. E Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©1995–2011 Analog Devices, Inc. All rights reserved. AD823 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1  Typical Performance Characteristics ..............................................7  Applications ....................................................................................... 1  Theory of Operation ...................................................................... 13  General Description ......................................................................... 1  Output Impedance ..................................................................... 14  Connection Diagram ....................................................................... 1  Application Notes ........................................................................... 15  Revision History ............................................................................... 2  Input Characteristics .................................................................. 15  Specifications..................................................................................... 3  Output Characteristics............................................................... 15  Absolute Maximum Ratings............................................................ 6  Outline Dimensions ....................................................................... 18  Thermal Resistance ...................................................................... 6  Ordering Guide .......................................................................... 19  ESD Caution .................................................................................. 6  REVISION HISTORY 11/11—Rev. D to Rev. E Changes to Theory of Operation Section .................................... 13 Changes to Ordering Guide .......................................................... 19 6/10—Rev. C to Rev. D Changes to Figure 34 ...................................................................... 11 Changes to Figure 36 ...................................................................... 13 5/10—Rev. B to Rev. C Changes to Table 4 ............................................................................ 6 2/07—Rev. A to Rev. B Updated Format .................................................................. Universal Changes to DC Performance .......................................................... 5 Updated Outline Dimensions ....................................................... 18 Changes to Ordering Guide ......................................................... 19 5/04—Rev. 0 to Rev. A Changes to Specifications ................................................................ 2 Changes to Ordering Guide ......................................................... 17 Updated Outline Dimensions ....................................................... 17 5/95—Revision 0: Initial Version Rev. E | Page 2 of 20 Data Sheet AD823 SPECIFICATIONS At TA = 25°C, +VS = +5 V, RL = 2 kΩ to 2.5 V, unless otherwise noted. Table 1. Parameter DYNAMIC PERFORMANCE −3 dB Bandwidth, VO ≤ 0.2 V p-p Full Power Response Slew Rate Settling Time to 0.1% to 0.01% NOISE/DISTORTION PERFORMANCE Input Voltage Noise Input Current Noise Harmonic Distortion Crosstalk f = 1 kHz f = 1 MHz DC PERFORMANCE Initial Offset Maximum Offset Over temperature Offset Drift Input Bias Current at TMAX Input Offset Current at TMAX Open-Loop Gain TMIN to TMAX INPUT CHARACTERISTICS Input Common-Mode Voltage Range Input Resistance Input Capacitance Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing IL = ±100 µA IL = ±2 mA IL = ±10 mA Output Current Short-Circuit Current Capacitive Load Drive POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio Conditions Min Typ G = +1 VO = 2 V p-p G = −1, VO = 4 V Step 12 16 3.5 22 MHz MHz V/µs G = −1, VO = 2 V Step G = −1, VO = 2 V Step 320 350 ns ns f = 10 kHz f = 1 kHz RL = 600 Ω to 2.5 V, VO = 2 V p-p, f = 20 kHz 16 1 −108 nV/√Hz fA/√Hz dBc RL = 5 kΩ RL = 5 kΩ −105 −63 dB dB VCM = 0 V to 4 V VCM = 0 V to 4 V 0.2 0.3 2 3 0.5 2 0.5 45 VO = 0.2 V to 4 V, RL = 2 kΩ 14 20 20 −0.2 to +3 VCM = 0 V to 3 V 60 VOUT = 0.5 V to 4.5 V Sourcing to 2.5 V Sinking to 2.5 V G = +1 Rev. E | Page 3 of 20 70 0.8 2.0 25 5 20 Unit mV mV µV/°C pA nA pA nA V/mV V/mV −0.2 to +3.8 1013 1.8 76 V Ω pF dB 0.025 to 4.975 0.08 to 4.92 0.25 to 4.75 16 40 30 500 V V V mA mA mA pF 3 TMIN to TMAX, total VS = 5 V to 15 V, TMIN to TMAX Max 5.2 80 36 5.6 V mA dB AD823 Data Sheet At TA = 25°C, +VS = +3.3 V, RL = 2 kΩ to 1.65 V, unless otherwise noted. Table 2. Parameter DYNAMIC PERFORMANCE −3 dB Bandwidth, VO ≤ 0.2 V p-p Full Power Response Slew Rate Settling Time to 0.1% to 0.01% NOISE/DISTORTION PERFORMANCE Input Voltage Noise Input Current Noise Harmonic Distortion Crosstalk f = 1 kHz f = 1 MHz DC PERFORMANCE Initial Offset Maximum Offset Over temperature Offset Drift Input Bias Current at TMAX Input Offset Current at TMAX Open-Loop Gain TMIN to TMAX INPUT CHARACTERISTICS Input Common-Mode Voltage Range Input Resistance Input Capacitance Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing IL = ±100 µA IL = ±2 mA IL = ±10 mA Output Current Short-Circuit Current Capacitive Load Drive POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio Conditions Min Typ G = +1 VO = 2 V p-p G = −1, VO = 2 V Step 12 15 3.2 20 MHz MHz V/µs G = −1, VO = 2 V Step G = −1, VO = 2 V Step 250 300 ns ns f = 10 kHz f = 1 kHz RL = 100 Ω, VO = 2 V p-p, f = 20 kHz 16 1 −93 nV/√Hz fA/√Hz dBc RL = 5 kΩ RL = 5 kΩ −105 −63 dB dB VCM = 0 V to 2 V VCM = 0 V to 2 V 0.2 0.5 2 3 0.5 2 0.5 30 VO = 0.2 V to 2 V, RL = 2 kΩ 13 15 12 −0.2 to +1 VCM = 0 V to 1 V 54 VOUT = 0.5 V to 2.5 V Sourcing to 1.5 V Sinking to 1.5 V G = +1 Rev. E | Page 4 of 20 70 1.5 2.5 25 5 20 Unit mV mV µV/°C pA nA pA nA V/mV V/mV −0.2 to +1.8 1013 1.8 70 V Ω pF dB 0.025 to 3.275 0.08 to 3.22 0.25 to 3.05 15 40 30 500 V V V mA mA mA pF 3 TMIN to TMAX, total VS = 3.3 V to 15 V, TMIN to TMAX Max 5.0 80 36 5.7 V mA dB Data Sheet AD823 At TA = 25°C, VS = ±15 V, RL = 2 kΩ to 0 V, unless otherwise noted. Table 3. Parameter DYNAMIC PERFORMANCE −3 dB Bandwidth, VO ≤ 0.2 V p-p Full Power Response Slew Rate Settling Time to 0.1% to 0.01% NOISE/DISTORTION PERFORMANCE Input Voltage Noise Input Current Noise Harmonic Distortion Crosstalk f = 1 kHz f = 1 MHz DC PERFORMANCE Initial Offset Maximum Offset Over temperature Offset Drift Input Bias Current at TMAX Input Offset Current at TMAX Open-Loop Gain TMIN to TMAX INPUT CHARACTERISTICS Input Common-Mode Voltage Range Input Resistance Input Capacitance Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing IL = ±100 µA IL = ±2 mA IL = ±10 mA Output Current Short-Circuit Current Capacitive Load Drive POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio Conditions Min Typ G = +1 VO = 2 V p-p G = −1, VO = 10 V Step 12 16 4 25 MHz MHz V/µs G = −1, VO = 10 V Step G = −1, VO = 10 V Step 550 650 ns ns f = 10 kHz f = 1 kHz RL = 600 Ω, VO = 10 V p-p, f = 20 kHz 16 1 −90 nV/√Hz fA/√Hz dBc RL= 5 kΩ RL= 5 kΩ −105 −63 dB dB VCM = 0 V VCM = −10 V VCM = 0 V 0.7 1.0 2 5 60 0.5 2 0.5 60 VO = +10 V to −10 V, RL = 2 kΩ 17 30 30 −15.2 to +13 VCM = −15 V to +13 V 66 VOUT = −14.5 V to +14.5 V Sourcing to 0 V Sinking to 0 V G = +1 Rev. E | Page 5 of 20 70 3.5 7 30 5 20 Unit mV mV µV/°C pA pA nA pA nA V/mV V/mV −15.2 to +13.8 1013 1.8 82 V Ω pF dB −14.95 to +14.95 −14.92 to +14.92 −14.75 to +14.75 17 80 60 500 V V V mA mA mA pF 3 TMIN to TMAX, total VS = 5 V to 15 V, TMIN to TMAX Max 7.0 80 36 8.4 V mA dB AD823 Data Sheet ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 4. θJA is specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Rating 36 V Specification is for device in free air. 1.3 W 0.9 W ±VS ±VS See Figure 4 −65°C to +125°C −40°C to +85°C 300°C Table 5. Thermal Resistance Package Type 8-Lead PDIP 8-Lead SOIC θJA 90 160 2.0 8-LEAD PDIP Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Unit °C/W °C/W TJ = 150°C 1.5 1.0 8-LEAD SOIC 0.5 0 –50 –40 –30 –20 –10 0 10 20 30 40 50 60 AMBIENT TEMPERATURE (°C) 70 80 90 Figure 4. Maximum Power Dissipation vs. Temperature ESD CAUTION Rev. E | Page 6 of 20 00901-004 MAXIMUM POWER DISSIPATION (W) Parameter Supply Voltage Internal Power Dissipation PDIP (N) SOIC (R) Input Voltage (Common Mode) Differential Input Voltage Output Short-Circuit Duration Storage Temperature Range N, R Operating Temperature Range Lead Temperature Range (Soldering, 10 sec) Data Sheet AD823 TYPICAL PERFORMANCE CHARACTERISTICS 80 100 +VS = +5V 314 UNITS σ = 40µV 70 +VS = +5V 317 UNITS σ = 0.4pA 90 80 60 70 60 UNITS UNITS 50 40 50 40 30 30 20 20 10 –150 –100 –50 0 50 100 INPUT OFFSET VOLTAGE (µV) 150 200 0 00901-005 0 –200 0 1 Figure 5. Typical Distribution of Input Offset Voltage 18 9 10 INPUT BIAS CURRENT (pA) 1000 16 14 UNITS 8 +VS = +5V VCM = 0V +VS = +5V –55°C TO +125°C 103 UNITS 20 3 4 5 6 7 INPUT BIAS CURRENT (pA) Figure 8. Typical Distribution of Input Bias Current 10000 22 2 00901-008 10 12 10 8 6 4 100 10 1 –5 –4 1 2 –3 –2 –1 0 3 4 5 INPUT OFFSET VOLTAGE DRIFT (µV/°C) 6 7 0.1 0 00901-006 0 –6 Figure 6. Typical Distribution of Input Offset Voltage Drift 3 25 50 75 TEMPERATURE (°C) 100 125 00901-009 2 Figure 9. Input Bias Current vs. Temperature 1000 +VS = +5V VS = ±15V INPUT BIAS CURRENT (pA) 1 0 –1 –2 100 10 1 –4 –5 –4 –3 –2 –1 0 1 2 3 COMMON-MODE VOLTAGE (V) 4 5 0.1 –16 Figure 7. Input Bias Current vs. Common-Mode Voltage –12 –8 –4 0 4 8 COMMON-MODE VOLTAGE (V) 12 16 Figure 10. Input Bias Current vs. Common-Mode Voltage Rev. E | Page 7 of 20 00901-010 –3 00901-007 INPUT BIAS CURRENT (pA) 2 AD823 Data Sheet 110 95 RL = 2kΩ +VS = +5V VS = ±2.5V 94 93 OPEN-LOOP GAIN (dB) OPEN-LOOP GAIN (dB) 100 90 80 92 91 90 89 88 70 500k 86 –55 Figure 11. Open-Loop Gain vs. Load Resistance 5 35 65 TEMPERATURE (°C) 95 125 Figure 14. Open-Loop Gain vs. Temperature 1000 100 RL = 10kΩ RL = 2kΩ CL = 20pF 100 80 80 100 PHASE OPEN-LOOP GAIN (dB) RL = 1kΩ 10 RL = 100Ω 1 0.1 0 –2.5 –2.0 –1.5 –1.0 –0.5 0.5 1.0 OUTPUT VOLTAGE (V) 1.5 2.0 2.5 00901-012 OPEN-LOOP GAIN (k V ) V –25 60 60 40 40 GAIN 20 20 0 0 –20 100 1k 10k 100k 1M PHASE MARGIN (Degrees) 100k 10k LOAD RESISTANCE (Ω) –20 100M 10M 00901-015 1k 00901-011 60 100 00901-014 87 FREQUENCY (Hz) Figure 15. Open-Loop Gain and Phase Margin vs. Frequency Figure 12. Open-Loop Gain vs. Output Voltage, VS = ±2.5 V 100 –40 +VS = +5V –80 –90 VS = ±15V VOUT = 10V p-p RL = 600Ω ALL OTHERS VS = ±2.5V VOUT = 2V p-p RL = 1kΩ +VS = +5V VOUT = 2V p-p RL = 5kΩ –100 –110 100 +VS = +3V VOUT = 2V p-p RL = 5kΩ 1k 10k 100k FREQUENCY (Hz) 1M 30 10 3 Figure 13. Total Harmonic Distortion vs. Frequency 10 100 1k 10k FREQUENCY (Hz) 100k Figure 16. Input Voltage Noise vs. Frequency Rev. E | Page 8 of 20 1M 00901-016 –70 +VS = +3V VOUT = 2V p-p RL = 100Ω 00901-013 THD (dB) –60 INPUT VOLTAGE NOISE (nV/√Hz) –50 Data Sheet AD823 90 5 CL = 20pF RL = 2kΩ G = +1 VS = ±15V 80 +VS = +5V 3 70 2 1 CMRR (dB) CLOSED-LOOP GAIN (dB) 4 0 +27°C –1 –55°C 60 50 +125°C –2 40 –3 30 20 10 00901-017 –5 0.30 3.27 6.24 9.21 12.18 15.15 18.12 21.09 24.06 27.03 30.00 FREQUENCY (MHz) 10 OUTPUT SATURATION VOLTAGE (V) 10 1 0.1 1M 10M VS – VOH 25°C 0.1 VOL 25°C 1 10 LOAD CURRENT (mA) 100 Figure 21. Output Saturation Voltage vs. Load Current 10 1% 0.1% 6 0.01% QUIESCENT CURRENT (mA) VS = ±15V CL = 20pF 4 2 0 –2 –4 0.1% 1% 0.01% –6 +125°C 8 +25°C 6 –55°C 4 2 –10 100 200 300 400 500 600 700 SETTLING TIME (ns) 0 0 5 10 15 SUPPLY VOLTAGE (±V) Figure 22. Quiescent Current vs. Supply Voltage Figure 19. Output Step Size vs. Settling Time (Inverter) Rev. E | Page 9 of 20 20 00901-022 –8 00901-019 OUTPUT STEP SIZE FROM 0V TO VSHOWN (V) 8 10M 1 Figure 18. Output Resistance vs. Frequency, +VS = +5 V, Gain = +1 10 1M +VS = +5V 0.01 0.1 00901-018 OUTPUT RESISTANCE (Ω) +VS = +5V GAIN = +1 10k 100k FREQUENCY (Hz) 10k 100k FREQUENCY (Hz) 00901-021 100 1k 1k Figure 20. Common-Mode Rejection Ratio vs. Frequency Figure 17. Closed-Loop Gain vs. Frequency 0.01 100 100 00901-020 –4 AD823 Data Sheet 21 100 +VS = +5V +VS = +5V 80 70 +PSRR 60 50 40 –PSRR 30 RS VIN 18 SERIES RESISTANCE (Ω) POWER SUPPLY REJECTION (dB) 90 CL 15 12 9 ФM = 45° 6 ФM = 20° 20 3 1k 10k 100k FREQUENCY (Hz) 1M 10M 0 00901-023 0 100 1 0 3 4 5 6 7 CAPACITOR (pF × 1000) 8 9 10 Figure 26. Series Resistance vs. Capacitive Load Figure 23. Power Supply Rejection vs. Frequency –30 30 +VS = +5V RL = 2kΩ G = +1 –40 CROSSTALK (dB) –50 20 VS = ±15V 10 –60 –70 –80 –90 –100 +VS = +5V –110 10M –130 1k 00901-024 100k 1M FREQUENCY (Hz) 10k Figure 24. Large Signal Frequency Response 100k FREQUENCY (Hz) VIN = 20V p-p VS = ±15V G = +1 5V 10µs 100kΩ 20µs +15V 3V VIN = 2.9V p-p 20kHz, 20V p-p VOUT 50Ω –15V 100kΩ 50pF 604Ω 50pF Figure 25. Output Swing, +VS = +3 V, G = −1 Figure 28. Output Swing, VS = ±15 V, G = +1 Rev. E | Page 10 of 20 00901-028 100kΩ 10M Figure 27. Crosstalk vs. Frequency VIN = 2.9V p-p +VS = +3V G = –1 500mV 1M 00901-027 –120 +VS = +3V 0 10k 00901-025 OUTPUT VOLTAGE (V p-p) 2 00901-026 10 Data Sheet 5V AD823 RL = 300Ω CL = 50pF RF = RG = 2kΩ +VS = +5V G = –1 RL = 100kΩ CL = 50pF +VS = +3V G = +1 3V 200µs 500mV Figure 29. Output Swing, +VS = +5 V, G = −1 00901-032 500mV GND 00901-029 GND 200µs Figure 32. Output Swing, +VS = +3 V, G = +1 5V VIN = 100mV STEP +VS = +3V G = +1 RL = 2kΩ CL = 50pF +VS = +5V G = +1 1.55V 500mV Figure 33. Pulse Response, +VS = +5 V, G = +1 RL = 2kΩ CL = 50pF +VS = +5V G = +2 RL = 2kΩ CL = 470pF +VS = +5V G = +1 100ns GND 00901-031 500mV 100ns GND Figure 30. Pulse Response, +VS = +3 V, G = +1 5V 00901-033 50ns 500mV Figure 31. Pulse Response, +VS = +5 V, G = +2 200ns 00901-034 25mV 00901-030 1.45V Figure 34. Pulse Response, +VS = +5 V, G = +1, CL = 470 pF Rev. E | Page 11 of 20 AD823 Data Sheet RL = 100kΩ CL = 50pF VS = ±15V G = +1 +10V 5V 500ns 00901-035 –10V Figure 35. Pulse Response, VS = ±15 V, G = +1 Rev. E | Page 12 of 20 Data Sheet AD823 THEORY OF OPERATION A nested integrator topology is used in the AD823 (see Figure 37). The output stage can be modeled as an ideal op amp with a single-pole response and a unity-gain frequency set by transconductance gm2 and Capacitor C2. R1 is the output impedance of the input stage; gm is the input transconductance. C1 and C5 provide Miller compensation for the overall op amp. The unity-gain frequency occurs at gm/C5. Solving the node equations for this circuit yields The AD823 is fabricated on the Analog Devices, Inc. proprietary complementary bipolar (CB) process that enables the construction of PNP and NPN transistors with similar fT’s in the 600 MHz to 800 MHz region. In addition, the process also features N-Channel JFETs that are used in the input stage of the AD823. These process features allow the construction of high frequency, low distortion op amps with picoamp input currents. This design uses a differential output input stage to maximize bandwidth and headroom (see Figure 36). The smaller signal swings required on the S1P/S1N outputs reduce the effect of the nonlinear currents due to junction capacitances and improve the distortion performance. With this design, harmonic distortion of better than −91 dB @ 20 kHz into 600 Ω with VOUT = 4 V p-p on a single 5 V supply is achieved. The complementary common emitter design of the output stage provides excellent load drive without the need for emitter followers, thereby improving the output range of the device considerably with respect to conventional op amps. The AD823 can drive 20 mA with the outputs within 0.6 V of the supply rails. The AD823 also offers outstanding precision for a high speed op amp. Input offset voltages of 1 mV maximum and offset drift of 2 µV/°C are achieved through the use of the Analog Devices advanced thin film trimming techniques. V OUT Vi A0 =     g   m2  (sR1[C1( A2 + 1)] + 1) ×  s  C2  + 1  where: A0 = gmgm2 R2R1 (open-loop gain of op amp). A2 = gm2 R2 (open-loop gain of output stage). The first pole in the denominator is the dominant pole of the amplifier and occurs at ~18 Hz. This equals the input stage output impedance R1 multiplied by the Miller-multiplied value of C1. The second pole occurs at the unity-gain bandwidth of the output stage, which is 23 MHz. This type of architecture allows more open-loop gain and output drive to be obtained than a standard 2-stage architecture would allow. VCC R42 R37 VBE + 0.3V V1 Q43 I5 Q55 Q44 A=1 I6 Q57 A = 19 Q61 Q72 Q49 Q18 Q46 J6 VINP R44 S1P S1N VOUT Q54 Q21 VINN Q62 Q60 VCC C1 Q48 Q53 I1 C6 R33 C2 R28 VB Q35 I2 Q17 A = 19 R43 I3 Q56 VEE Figure 36. Simplified Schematic Rev. E | Page 13 of 20 Q52 I4 Q59 A=1 00901-036 J1 Q58 AD823 Data Sheet OUTPUT IMPEDANCE Rev. E | Page 14 of 20 S1N gmVI C1 R1 VOUT S1P C2 gmVI R1 C5 gm2 R2 00901-037 The low frequency open-loop output impedance of the commonemitter output stage used in this design is approximately 30 kΩ. Although this is significantly higher than a typical emitter follower output stage, when it is connected with feedback, the output impedance is reduced by the open-loop gain of the op amp. With 109 dB of open-loop gain, the output impedance is reduced to
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