AD8512TRZ-EP

Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier AD8512-EP Enhanced Product PIN CONFIGURATION Fast settling time: 500 ns to 0.1% Low offset voltage: 1.0 mV maximum at VS = ±15 V Low offset voltage drift: 1.7 µV/°C typical Low input bias current: 25 pA typical at VS = ±15 V Dual-supply operation: ±5 V to ±15 V Low noise: 8.0 nV/√Hz typical at f = 1 kHz Low distortion: 0.0005% No phase reversal Unity gain stable OUT A 1 8 V+ –IN A 2 AD8512-EP 7 OUT B +IN A 3 TOP VIEW (Not to Scale) 6 –IN B 5 +IN B V– 4 17170-002 FEATURES Figure 1. ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request APPLICATIONS Instrumentation Multipole filters Precision current measurement Photodiode amplifiers Military communication Avionics GENERAL DESCRIPTION The AD8512-EP is a dual-precision JFET amplifier that features low offset voltage, input bias current, input voltage noise, and input current noise. The combination of low offsets, low noise, and very low input bias currents makes these amplifiers especially suitable for high impedance sensor amplification and precise current measurements using shunts. The combination of dc precision, low noise, and fast settling time results in superior accuracy in flight instruments, electronic measurement, and aviation equipment. Unlike many competitive amplifiers, the AD8512EP maintains its fast settling performance even with substantial capacitive loads. Unlike many older JFET amplifiers, the AD8512-EP does not suffer from output phase reversal when Rev. 0 input voltages exceed the maximum common-mode voltage range. Fast slew rate and great stability with capacitive loads make the AD8512-EP suitable for high performance filters. Low input bias currents, low offset, and low noise result in a wide dynamic range of photodiode amplifier circuits. Low noise and distortion, high output current, and excellent speed make the AD8512-EP a great choice for military communication applications. The AD8512-EP is available in an 8-lead narrow SOIC_N package. The AD8512-EP is specified over a military temperature range of −55°C to +125°C. Additional application and technical information can be found in the AD8512 data sheet. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com AD8512-EP Enhanced Product TABLE OF CONTENTS Features .............................................................................................. 1  Absolute Maximum Ratings ............................................................5  Enhanced Product Features ............................................................ 1  Thermal Resistance .......................................................................5  Applications ....................................................................................... 1  ESD Caution...................................................................................5  Pin Configuration ............................................................................. 1  Typical Performance Characteristics ..............................................6  General Description ......................................................................... 1  Outline Dimensions ..........................................................................7  Revision History ............................................................................... 2  Ordering Guide .............................................................................7  Specifications..................................................................................... 3  Electrical Characteristics ............................................................. 4  REVISION HISTORY 8/2018—Revision 0: Initial Version Rev. 0 | Page 2 of 7 Enhanced Product AD8512-EP SPECIFICATIONS VS = ±5 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Test Conditions/Comments Min VOS Typ Max Unit 0.1 0.9 1.8 75 0.7 7.5 50 0.3 0.5 mV mV pA nA nA pA nA nA −55°C < TA < +125°C Input Bias Current IB 21 −55°C < TA < +85°C −55°C < TA < +125°C Input Offset Current IOS 5 −55°C < TA < +85°C −55°C < TA < +125°C Input Capacitance Differential Common Mode Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain Offset Voltage Drift (TCVOS) OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Settling Time Total Harmonic Distortion (THD) + Noise Phase Margin NOISE PERFORMANCE Voltage Noise Density Peak-to-Peak Voltage Noise 12.5 11.5 CMRR AVO ΔVOS/ΔT VCM = −2.0 V to +2.5 V RL = 2 kΩ, VO = −3 V to +3 V VOH RL = 10 kΩ RL = 2 kΩ RL = 600 Ω RL = 10 kΩ, −55°C < TA < +125°C RL = 2 kΩ, −55°C < TA < +125°C RL = 600 Ω, −55°C < TA < +125°C VOL IOUT VS = ±4.5 V to ±18 V VO = 0 V −55°C < TA < +125°C SR GBP tS THD + N φM RL = 2 kΩ en p-p 4.1 3.9 3.7 ±40 PSRR ISY en −2.0 86 65 To 0.1%, 0 V to 4 V step, G = +1 1 kHz, G = +1, RL = 2 kΩ f = 10 Hz f = 100 Hz f = 1 kHz f = 10 kHz 0.1 Hz to 10 Hz bandwidth Rev. 0 | Page 3 of 7 86 +2.5 100 107 1.7 4.3 4.2 4.1 −4.9 −4.9 −4.8 ±54 130 2.0 12 −4.7 −4.5 −4.2 2.3 2.5 pF pF V dB V/mV µV/°C V V V V V V mA dB mA mA 20 8 0.4 0.0005 44.5 V/µs MHz µs % Degrees 34 12 8.0 7.6 2.4 nV/√Hz nV/√Hz nV/√Hz nV/√Hz µV p-p 10 5.2 AD8512-EP Enhanced Product ELECTRICAL CHARACTERISTICS VS = ±15 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 2. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Test Conditions/Comments Min VOS Typ Max Unit 0.1 1.0 1.8 80 0.7 10 75 0.3 0.5 mV mV pA nA nA pA nA nA +13.0 pF pF V dB V/mV 12 µV/°C −55°C < TA < +125°C Input Bias Current IB 25 −55°C < TA < +85°C −55°C < TA < +125°C Input Offset Current IOS 6 −55°C < TA < +85°C −55°C < TA < +125°C Input Capacitance Differential Common Mode Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain Offset Voltage Drift OUTPUT CHARACTERISTICS Output Voltage High Output Voltage Low Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Gain Bandwidth Product Settling Time Total Harmonic Distortion (THD) + Noise Phase Margin NOISE PERFORMANCE Voltage Noise Density Peak-to-Peak Voltage Noise 12.5 11.5 CMRR AVO VCM = −12.5 V to +12.5 V RL = 2 kΩ, VCM = 0 V, VO = −13.5 V to +13.5 V −13.5 86 115 ΔVOS/ΔT VOH VOL 1.7 RL = 10 kΩ RL = 2 kΩ RL = 600 Ω RL = 600 Ω, −55°C < TA < +125°C RL = 10 kΩ, −55°C < TA < +125°C RL = 2 kΩ, −55°C < TA < +125°C RL = 600 Ω RL = 600 Ω, −55°C < TA < +125°C 14.0 13.8 13.5 11.4 VS = ±4.5 V to ±18 V VO = 0 V −55°C < TA < +125°C SR GBP tS RL = 2 kΩ en p-p −14.6 −14.5 −13.8 −12.1 ±70 PSRR ISY en 14.2 14.1 13.9 −14.9 –14.8 −14.3 IOUT THD + N φM 108 196 To 0.1%, 0 V to 10 V step, G = +1 To 0.01%, 0 V to 10 V step, G = +1 1 kHz, G = +1, RL = 2 kΩ f = 10 Hz f = 100 Hz f = 1 kHz f = 10 kHz 0.1 Hz to 10 Hz bandwidth Rev. 0 | Page 4 of 7 86 2.2 2.5 2.6 V V V V V V V V mA dB mA mA 20 8 0.5 0.9 0.0005 52 V/µs MHz µs µs % Degrees 34 12 8.0 7.6 2.4 nV/√Hz nV/√Hz nV/√Hz nV/√Hz µV p-p 10 5.2 Enhanced Product AD8512-EP ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 3. Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. Rating ±18 V ±VS See Figure 2 −65°C to +150°C −55°C to +125°C −65°C to +150°C 300°C 2000 V θJA is the natural convection junction to ambient thermal resistance measured in a one cubic foot sealed enclosure. θJC is the junction to case thermal resistance. Table 4. Thermal Resistance Package Type1 R-8 Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. 1 θJA 158 θJC 43 Unit °C/W Thermal impedance simulated values are based on a JEDEC 2S2P thermal test board. See JEDEC JESD-51. 1.0 0.9 MAXIMUM POWER DISSIPATION (W) 0.8 VSY = ±15V 0.7 0.6 0.5 0.4 0.3 VSY = ±5V 0.2 0.1 0 –55 –35 –15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) Figure 2. Maximum Power Dissipation vs. Ambient Temperature ESD CAUTION Rev. 0 | Page 5 of 7 17170-040 Parameter Supply Voltage Input Voltage Power Dissipation Storage Temperature Range Operating Temperature Range Junction Temperature Range Lead Temperature (Soldering, 10 sec) Electrostatic Discharge (Human Body Model) AD8512-EP Enhanced Product TYPICAL PERFORMANCE CHARACTERISTICS 30 1k VSY = ±15V 15 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TCVOS (µV/°C) 4.5 5.0 5.5 6.0 VSY = ±15V 1 VSY = ±5V 0.1 0.01 –55 17170-009 0 10 100k 5 25 45 65 TEMPERATURE (°C) 85 105 125 125 SUPPLY CURRENT PER AMPLIFIER (mA) 2.50 10k VSY = ±15V 1k VSY = ±5V 100 10 –35 –15 5 25 45 65 TEMPERATURE (°C) 85 105 125 17170-010 INPUT BIAS CURRENT (pA) –15 Figure 5. Input Offset Current vs. Temperature Figure 3. TCVOS Distribution 1 –55 –35 17170-011 20 100 17170-015 INPUT OFFSET CURRENT (pA) NUMBER OF AMPLIFIERS 25 2.25 VSY = ±15V 2.00 VSY = ±5V 1.75 1.50 1.25 1.00 –55 Figure 4. Input Bias Current vs. Temperature –35 –15 5 25 45 65 TEMPERATURE (°C) 85 105 Figure 6. Supply Current per Amplifier vs. Temperature Rev. 0 | Page 6 of 7 Enhanced Product AD8512-EP OUTLINE DIMENSIONS 5.00 (0.1968) 4.80 (0.1890) 1 5 6.20 (0.2441) 5.80 (0.2284) 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY 0.10 SEATING PLANE 0.50 (0.0196) 0.25 (0.0099) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) 45° 8° 0° 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. 012407-A 8 4.00 (0.1574) 3.80 (0.1497) Figure 7. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model1 AD8512TRZ-EP AD8512TRZ-EP-R7 1 Temperature Range −55°C to +125°C −55°C to +125°C Package Description 8-Lead Standard Small Outline Package [SOIC_N] 8-Lead Standard Small Outline Package [SOIC_N] Z = RoHS Compliant Part ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D17170-0-8/18(0) Rev. 0 | Page 7 of 7 Package Option R-8 R-8 Marking Code DNL DNL