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AD8519ARZ-REEL7

AD8519ARZ-REEL7

  • 厂商:

    AD(亚德诺)

  • 封装:

    SOICN-8_4.9X3.9MM

  • 描述:

    IC OPAMP GP 1 CIRCUIT 8SOIC

  • 数据手册
  • 价格&库存
AD8519ARZ-REEL7 数据手册
8 MHz Rail-to-Rail Operational Amplifiers AD8519/AD8529 APPLICATIONS Portable communications Microphone amplifiers Portable phones Sensor interface Active filters PCMCIA cards ASIC input drivers Wearable computers Battery-powered devices Voltage reference buffers Personal digital assistants PIN CONFIGURATIONS 1 8 NC 2 7 V+ +IN A 3 6 OUT A V– 4 5 NC AD8519 01756-001 NC –IN A NC = NO CONNECT Figure 1. 8-Lead SOIC (R Suffix) OUT A 1 AD8519 5 V+ 4 –IN A V– 2 +IN A 3 01756-002 Space-saving SC70 and SOT-23 packaging Wide bandwidth: 8 MHz @ 5 V Low offset voltage: 1.2 mV maximum Rail-to-rail output swing 2.9 V/μs slew rate Unity gain stable Single-supply operation: 2.7 V to 12 V Figure 2. 5-Lead SC70 and SOT-23 (KS and RJ Suffixes) OUT A 1 8 V+ –IN A 2 7 OUT B +IN A 3 6 –IN B V– 4 5 +IN B AD8529 01756-003 FEATURES Figure 3. 8-Lead SOIC and MSOP (R and RM Suffixes) GENERAL DESCRIPTION The AD8519 and AD8529 are rail-to-rail output bipolar amplifiers with a unity gain bandwidth of 8 MHz and a typical voltage offset of less than 1 mV. The AD8519 brings precision and bandwidth to the SC70 and SOT-23 packages. The low supply current makes the AD8519/AD8529 ideal for batterypowered applications. The rail-to-rail output swing of the AD8519/AD8529 is larger than standard video op amps, making them useful in applications that require greater dynamic range than standard video op amps. The 2.9 V/μs slew rate makes the AD8519/AD8529 a good match for driving ASIC inputs such as voice codecs. The small SC70 package makes it possible to place the AD8519 next to sensors, reducing external noise pickup. The AD8519/AD8529 is specified over the extended industrial (−40°C to +125°C) temperature range. The AD8519 is available in 5-lead SC70 and 5-lead SOT-23 packages, and an 8-lead SOIC surface-mount package. The AD8529 is available in 8-lead SOIC and 8-lead MSOP packages. Rev. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©1998–2007 Analog Devices, Inc. All rights reserved. AD8519/AD8529 TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................7 Applications....................................................................................... 1 Typical Performance Characteristics ..............................................8 Pin Configurations ........................................................................... 1 Applications Information .............................................................. 12 General Description ......................................................................... 1 Maximum Power Dissipation ................................................... 12 Revision History ............................................................................... 2 Precision Full-Wave Rectifier ................................................... 12 Specifications..................................................................................... 3 10× Microphone Preamp Meets PC99 Specifications ........... 13 Electrical Characteristics............................................................. 3 Two-Element Varying Bridge Amplifier ................................. 13 Absolute Maximum Ratings............................................................ 7 Outline Dimensions ....................................................................... 14 Thermal Resistance ...................................................................... 7 Ordering Guide .......................................................................... 15 REVISION HISTORY 5/07—Rev. C to Rev. D Changes to Features.......................................................................... 1 Changes to General Description .................................................... 1 Changes to Two-Element Bridge Amplifier Section.................. 13 Updated Outline Dimensions ....................................................... 14 2/03—Rev. B to Rev. C Changed μSOIC to MSOP.................................................Universal Changed SO-8 to R-8 .........................................................Universal Changes to Precision Full-Wave Rectifier section ....................... 9 Changes to 10× Microphone Preamp Meets PC99 Specifications section................................................................... 9 Updated Outline Dimensions ....................................................... 12 Rev. D | Page 2 of 16 AD8519/AD8529 SPECIFICATIONS ELECTRICAL CHARACTERISTICS VS = 5.0 V, V− = 0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Conditions VOS AD8519AKS, AD8519ART −40°C ≤ TA ≤ +125°C AD8519AR (R-8), AD8529 −40°C ≤ TA ≤ +125°C Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain VCM CMRR AVO Min Typ Max Unit 600 800 600 1100 1300 1000 1100 300 400 ±50 ±100 4 μV μV μV μV nA nA nA nA V dB V/mV V/mV V/mV μV/°C pA/°C −40°C ≤ TA ≤ +125°C −40°C ≤ TA ≤ +125°C Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short-Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Voltage Noise Density Current Noise Density 0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V < VOUT < 4.5 V RL = 10 kΩ, 0.5 V < VOUT < 4.5 V RL = 10 kΩ, −40°C ≤ TA ≤ +125°C 0 63 50 30 ∆VOS/∆T ∆IB/∆T VOH VOL ISC IOUT PSRR 100 30 100 2 500 IL = 250 μA −40°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 μA −40°C ≤ TA ≤ +125°C IL = 5 mA Short to ground, instantaneous 4.90 4.80 V V 80 200 ±70 ±25 mV mV mA mA VS = 2.7 V to 7 V −40°C ≤ TA ≤ +125°C VOUT = 2.5 V −40°C ≤ TA ≤ +125°C 110 80 600 SR tS GBP Φm 1 V < VOUT < 4 V, RL = 10 kΩ To 0.01% 2.9 1200 8 60 V/μs ns MHz Degrees en p-p en in 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz 0.5 10 0.4 μV p-p nV/√Hz pA/√Hz ISY Rev. D | Page 3 of 16 1200 1400 dB dB μA μA AD8519/AD8529 VS = 3.0 V, V− = 0 V, VCM = 1.5 V, TA = 25°C, unless otherwise noted. Table 2. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Conditions VOS AD8519AKS, AD8519ART −40°C ≤ TA ≤ +125°C AD8519AR (R-8), AD8529 −40°C ≤ TA ≤ +125°C Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio IB IOS VCM CMRR Large Signal Voltage Gain AVO OUTPUT CHARACTERISTICS Output Voltage Swing High VOH Output Voltage Swing Low VOL POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Density Current Noise Density Min Typ Max Unit 700 900 700 1200 1400 1100 1200 300 ±50 2 μV μV μV μV nA nA V 0 0 V ≤ VCM ≤ 2.0 V, −40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V < VOUT < 2.5 V RL = 10 kΩ 55 20 75 20 30 dB V/mV V/mV IL = 250 μA IL = 5 mA IL = 250 μA IL = 5 mA 2.90 2.80 PSRR ISY VS = 2.5 V to 7 V, −40°C ≤ TA ≤ +125°C VOUT = 1.5 V −40°C ≤ TA ≤ +125°C 60 SR tS GBP Φm RL = 10 kΩ To 0.01% 1.5 2000 6 55 V/μs ns MHz Degrees en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Rev. D | Page 4 of 16 80 600 100 200 V V mV mV 1100 1300 dB μA μA AD8519/AD8529 VS = 2.7 V, V− = 0 V, VCM = 1.35 V, TA = 25°C, unless otherwise noted. Table 3. Parameter INPUT CHARACTERISTICS Offset Voltage Input Bias Current Input Offset Current Input Voltage Range Common-Mode Rejection Ratio Large Signal Voltage Gain Symbol Conditions VOS AD8519AKS, AD8519ART −40°C ≤ TA ≤ +125°C AD8519AR (R-8), AD8529 −40°C ≤ TA ≤ +125°C IB IOS VCM CMRR AVO OUTPUT CHARACTERISTICS Output Voltage Swing High VOH Output Voltage Swing Low VOL POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Density Current Noise Density PSRR ISY 0 V ≤ VCM ≤ 1.7 V, −40°C ≤ TA ≤ +125°C RL = 2 kΩ, 0.5 V < VOUT < 2.2 V RL = 10 kΩ IL = 250 μA IL = 5 mA IL = 250 μA IL = 5 mA VS = 2.5 V to 7 V −40°C ≤ TA ≤ +125°C VOUT = 1.35 V −40°C ≤ TA ≤ +125°C Min 0 55 20 Typ Max Unit 700 900 700 1400 1600 1200 1300 300 ±50 2 μV μV μV μV nA nA V dB V/mV V/mV 75 20 30 2.60 2.50 60 80 600 100 200 V V mV mV 1100 1300 dB μA μA SR tS GBP Φm RL = 10 kΩ To 0.01% 1.5 2000 6 55 V/μs ns MHz Degrees en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Rev. D | Page 5 of 16 AD8519/AD8529 VS = 5.0 V, V− = −5 V, VCM = 0 V, TA = 25°C, unless otherwise noted. Table 4. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Conditions VOS AD8519AKS, AD8519ART −40°C ≤ TA ≤ +125°C AD8519AR (R-8), AD8529 −40°C ≤ TA ≤ +125°C VCM = 0 V VCM = 0 V, −40°C ≤ TA ≤ +125°C VCM = 0 V VCM = 0 V, −40°C ≤ TA ≤ +125°C Input Bias Current IB Input Offset Current IOS Input Voltage Range Common-Mode Rejection Ratio VCM CMRR Large Signal Voltage Gain AVO Offset Voltage Drift Bias Current Drift OUTPUT CHARACTERISTICS Output Voltage Swing High Output Voltage Swing Low Short-Circuit Current Maximum Output Current POWER SUPPLY Power Supply Rejection Ratio Supply Current/Amplifier DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Voltage Noise Density Current Noise Density Min VOL ISC IOUT Max Unit 600 800 600 1100 1300 1000 1100 300 400 ±50 ±100 +4 μV μV μV μV nA nA nA nA V −5 −4.9 V ≤ VCM ≤ +4.0 V, −40°C ≤ TA ≤ +125°C RL = 2 kΩ RL = 10 kΩ −40°C ≤ TA ≤ +125°C 70 50 25 ∆VOS/∆T ∆IB/∆T VOH Typ 100 30 200 dB V/mV V/mV V/mV μV/°C pA/°C 2 500 IL = 250 μA −40°C ≤ TA ≤ +125°C IL = 5 mA IL = 250 μA −40°C ≤ TA ≤ +125°C IL = 5 mA Short to ground, instantaneous 4.90 4.80 V V −4.90 −4.80 ±70 ±25 PSRR ISY VS = ±1.5 V to ±6 V, −40°C ≤ TA ≤ +125°C VOUT = 0 V −40°C ≤ TA ≤ +125°C SR tS GBP Φm −4 V < VOUT < +4 V, RL = 10 kΩ To 0.01% 2.9 1000 8 60 V/μs ns MHz Degrees en in f = 1 kHz f = 1 kHz 10 0.4 nV/√Hz pA/√Hz Rev. D | Page 6 of 16 60 100 600 V V mA mA 1200 1400 dB μA μA AD8519/AD8529 ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 5. Parameter Supply Voltage Input Voltage1 Differential Input Voltage2 Storage Temperature Range Operating Temperature Range Junction Temperature Range Lead Temperature Range (Soldering, 60 sec) Rating ±6 V ±6 V ±0.6 V −65°C to +150°C −40°C to +125°C −65°C to +150°C 300°C Table 6. Package Type 5-Lead SC70 (KS) 5-Lead SOT-23 (RJ) 8-Lead SOIC (R) 8-Lead MSOP (RM) 1 1 For supply voltages less than ±6 V, the input voltage is limited to less than or equal to the supply voltage. 2 For differential input voltages greater than ±0.6 V, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices. θJA1 376 230 158 210 θJC 126 146 43 45 Unit °C/W °C/W °C/W °C/W θJA is specified for worst-case conditions, that is, θJA is specified for device soldered in circuit board for SOT-23 and SOIC packages. ESD CAUTION Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. D | Page 7 of 16 AD8519/AD8529 TYPICAL PERFORMANCE CHARACTERISTICS 40 VS = 5V TA = 25°C COUNT = 395 OP AMPS INPUT BIAS CURRENT (nA) QUANTITY OF AMPLIFIERS 50 40 30 20 –40 –80 –120 –160 10 –200 01756-004 0 –1.0 VS = 5V TA = 25°C 0 –0.6 –0.2 0.2 0.6 –240 1.0 0 1 INPUT OFFSET VOLTAGE (mV) 2 3 01756-007 60 5 4 COMMON-MODE VOLTAGE (V) Figure 4. Input Offset Voltage Distribution Figure 7. Input Bias Current vs. Common-Mode Voltage 120 600 500 60 40 0 2 4 6 8 10 20 12 0 1 SUPPLY VOLTAGE (V) Figure 5. Supply Current per Amplifier vs. Supply Voltage 3 50 5 VS = 5V TA = 25°C 40 VS = 5V GAIN OPEN-LOOP GAIN (dB) 700 4 Figure 8. Common-Mode Rejection vs. Common-Mode Voltage 800 600 VS = 10V 500 VS = 2.7V, 3.0V 45 30 90 20 PHASE 10 135 0 180 –10 225 –20 270 300 –50 –25 0 25 50 75 100 125 –30 100k 150 TEMPERATURE (°C) 1M 10M FREQUENCY (Hz) Figure 6. Supply Current per Amplifier vs. Temperature Figure 9. Open-Loop Gain, Phase vs. Frequency Rev. D | Page 8 of 16 100M 01756-009 400 01756-006 SUPPLY CURRENT (µA) 2 COMMON-MODE VOLTAGE (V) PHASE SHIFT (Degrees) 450 80 01756-008 COMMON-MODE REJECTION (dB) 550 100 01756-005 SUPPLY CURRENT (µA) VS = 5V AD8519/AD8529 60 20 0 40 30 –OS 20 +OS –20 100k 1M 10M 01756-013 10 01756-010 –40 10k VS = 5V VCM = 2.5V RL = 10kΩ TA = 25°C VIN = ±50mV 50 OVERSHOOT (%) 40 CLOSED-LOOP GAIN (dB) 60 VS = 5V RL = 830Ω TA = 25°C CL ≤ 5pF 0 10 100M 100 FREQUENCY (Hz) Figure 10. Closed-Loop Gain vs. Frequency Figure 13. Overshoot vs. Capacitance Load 4 110 VS = 5V TA = 25°C 100 0.1% STEP SIZE (V) 70 60 50 1 0 –1 0.1% –2 40 1% 10k 100k 1M 01756-014 –3 01756-011 30 –4 0 10M FREQUENCY (Hz) Figure 14. Step Size vs. Settling Time 5 90 VS = 5V AVCC = 1 RL = 10kΩ TA = 25°C CL = 15pF VS = 5V TA = 25°C 70 –PSRR 60 +PSRR 50 40 30 20 01756-012 10 10k 100k 1M 4 DISTORTION < 1% 3 2 1 0 10k 10M FREQUENCY (Hz) 01756-015 MAXIMUM OUTPUT SWING (V p-p) 80 PSRR (dB) 2 1 SETTLING TIME (µs) Figure 11. CMRR vs. Frequency 0 1k 1% 2 80 CMRR (dB) VS = 5V TA = 25°C 3 90 20 1k 1k CAPACITANCE (pF) 100k 1M FREQUENCY (Hz) Figure 12. PSRR vs. Frequency Figure 15. Output Swing vs. Frequency Rev. D | Page 9 of 16 10M AD8519/AD8529 300 VS = 5V TA = 25°C VS = ±2.5V AV = 100kΩ en = 0.4µV p-p OUTPUT IMPEDANCE (Ω) 250 200 AVCC = 10 150 100 AVCC = 1 0 100k 1M 20mV 1s 01756-019 01756-016 50 10M FREQUENCY (Hz) Figure 16. Output Impedance vs. Frequency Figure 19. 0.1 Hz to 10 Hz Noise 70 VS = 5V TA = 25°C VS = ±2.5V VIN = 6V p-p AV = 1 60 50 40 30 20 10 100 1k 20µs 01756-020 0 10 500ns 01756-021 01756-017 VOLTAGE NOISE DENSITY (nV/ Hz) 80 10k 1V FREQUENCY (Hz) Figure 17. Voltage Noise Density Figure 20. No Phase Reversal 7 VS = 5V TA = 25°C VS = ±2.5V AVCC = 1 TA = 25°C CL = 100pF RL = 10kΩ 6 5 4 3 2 1 0 10 01756-018 CURRENT NOISE DENSITY (pA/ Hz) 8 100 1k 10k 20mV FREQUENCY (Hz) Figure 21. Small Signal Transient Response Figure 18. Current Noise Density Rev. D | Page 10 of 16 AD8519/AD8529 500mV 50µs 01756-022 VS = ±2.5V AVCC = 1 TA = 25°C CL = 100pF Figure 22. Large Signal Transient Response Rev. D | Page 11 of 16 AD8519/AD8529 APPLICATIONS INFORMATION R4 10kΩ The maximum power that can be safely dissipated by the AD8519/AD8529 is limited by the associated rise in junction temperature. The maximum safe junction temperature is 150°C for these plastic packages. If this maximum is momentarily exceeded, proper circuit operation is restored as soon as the die temperature is reduced. Operating the product in an overheated condition for an extended period can result in permanent damage to the device. VIN D1 1N914 The operation of the basic circuit (shown in Figure 23) should be examined before considering the slew rate further. U1 is set up to have two states of operation. D1 and D2 diodes switch the output between the two states. State one is an inverter with a gain of +1, and state two is a simple unity gain buffer where the output is equal to the value of the virtual ground. The virtual ground is the potential present at the noninverting node of the U1. State one is active when VIN is larger than the virtual ground. D2 is on in this condition. If VIN drops below virtual ground, D2 turns off and D1 turns on. This causes the output of U1 to simply buffer the virtual ground and this configuration is state two. Therefore, the function of U1, which results from these two states of operation, is a half-wave inverter. The U2 function takes the inverted half wave at a gain of two and sums it into the original VIN wave, which outputs a rectified full wave. VOUT = VIN − 2 V IN −1 < 0 This type of rectifier can be very precise if the following electrical parameters are adhered to: • All passive components should be of tight tolerance, 1% for resistors and 5% for capacitors. If the application circuit requires high impedance (that is, direct sensor interface), then an FET amplifier is a better choice than the AD8519. An amp such as the AD8519, which has a great slew rate specification, yields the best result because the circuit involves switching. R3 4.99kΩ D2 1N914 R5 10kΩ R6 5kΩ VOUT U2 AD8519 AD8519 VIRTUAL GROUND = Slew rate is probably the most underestimated parameter when designing a precision rectifier. Yet without a good slew rate, large glitches are generated during the period when both diodes are off. • NODE A U1 PRECISION FULL-WAVE RECTIFIER • R2 10kΩ R1 10kΩ R7 3.32kΩ VCC 2 01756-023 MAXIMUM POWER DISSIPATION Figure 23. Precision Full-Wave Rectifier Switching glitches are caused when D1 and D2 are both momentarily off. This condition occurs every time the input signal is equal to the virtual ground potential. When this condition occurs, the U1 stage is taken out of the VOUT equation and VOUT is equal to VIN × R5 × (R4 || R1 + R2 + R3). Note that Node A should be VIN inverted or virtual ground, but in this condition, Node A is simply tracking VIN. Given a sine wave input centered around virtual ground, glitches are generated at the sharp negative peaks of the rectified sine wave. If the glitches are hard to notice on an oscilloscope, raise the frequency of the sine wave until they become apparent. The size of the glitches is proportional to the input frequency, the diode turn-on potential (0.2 V or 0.65 V), and the slew rate of the op amp. R6 and R7 are both necessary to limit the amount of bias current related voltage offset. Unfortunately, there is no perfect value for R6 because the impedance at the inverting node is altered as D1 and D2 switch. Therefore, there is also some unresolved bias current related offset. To minimize this offset, use lower value resistors or choose an FET amplifier if the optimized offset is still intolerable. The AD8519 offers a unique combination of speed vs. power ratio at 2.7 V single supply, small size (SC70 and SOT-23), and low noise that makes it an ideal choice for most high volume and high precision rectifier circuits. Rev. D | Page 12 of 16 AD8519/AD8529 TWO-ELEMENT VARYING BRIDGE AMPLIFIER 10× MICROPHONE PREAMP MEETS PC99 SPECIFICATIONS This circuit, while lacking a unique topology, is anything but featureless when an AD8519 is used as the op amp. This preamp gives 20 dB gain over a frequency range of 20 Hz to 20 kHz and is fully PC99 compliant in all parameters including THD + N, dynamic range, frequency range, amplitude range, and crosstalk. Not only does this preamp comply with the PC99 specifications, it far surpasses them. In fact, when the input noise is 120 dB, this preamp has a VOUT noise of around 100 dB, which is suitable for most professional 20-bit audio systems. At 120 dB THD + N in unity gain, the AD8519 is suitable for 24-bit professional audio systems. In other words, the AD8519 will not be the limiting performance factor in audio systems despite its small size and low cost. Slew rate related distortion is not present at the lower voltages because the AD8519 is so fast at 2.1 V/μs. A general rule of thumb for determining the necessary slew rate for an audio system is to take the maximum output voltage range of the device, given the design’s power rails, and divide by two. In Figure 24, the power rails are 2.7 V and the output is rail-to-rail. Enter these numbers into the equation: 2.7/2 = 1.35 V, and the minimum ideal slew rate is 1.35 V/μs. There are a host of bridge configurations available to designers. For a complete analysis, look at the ubiquitous bridge and its different forms. Refer to the 1992 Amplifier Applications Guide 1 . Figure 25 is a schematic of a two-element varying bridge. This configuration is commonly found in pressure and flow transducers. With a two-element varying bridge, the signal is 2× as compared to a single-element varying bridge. The advantages of this type of bridge are gain setting range and single-supply application. Negative characteristics are nonlinear operation and required R matching. Given these sets of conditions, requirements, and characteristics, the AD8519 can be successfully used in this configuration because of its rail-to-rail output and low offset. Perhaps the greatest benefits of the AD8519, when used in the bridge configuration, are the advantages it can bring when placed in a remote bridge sensor. For example, the tiny SC70 and SOT-23 packages reduce the overall sensor size; low power allows for remote powering via batteries or solar cells, high output current drive to drive a long cable; and 2.7 V operation for two-cell operation. 2.7V RF C1 1µF MIC IN 1 30.9kΩ 2.7V CODEC LINE IN OR MIC IN 3.09kΩ 1nF NPO AD8519 46.4kΩ 93.1kΩ R AD8519 RF Adolfo Garcia and James Wong, Chapter 2, 1992, Amplifier Applications Guide. 48kΩ 2.7V 10µF ELECT 01756-024 1kΩ R Figure 25. Two-Element Varying Bridge Amplifier 240pF 2.7V R 01756-025 While this data sheet gives only one audio example, many audio circuits are enhanced with the use of the AD8519. Examples include: active audio filters such as bass, treble, and equalizers; PWM filters at the output of audio DACs; buffers and summers for mixing stations; and gain stages for volume control. R Figure 24. 10× Microphone Preamplifier Rev. D | Page 13 of 16 AD8519/AD8529 OUTLINE DIMENSIONS 5.00 (0.1968) 4.80 (0.1890) 5 1 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) 6.20 (0.2441) 5.80 (0.2284) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) COPLANARITY 0.10 SEATING PLANE 8 3.20 3.00 2.80 0.50 (0.0196) 0.25 (0.0099) 5.15 4.90 4.65 5 1 4 45° PIN 1 8° 0° 0.65 BSC 0.25 (0.0098) 0.17 (0.0067) 0.95 0.85 0.75 1.27 (0.0500) 0.40 (0.0157) COMPLIANT TO JEDEC STANDARDS MS-012-A A CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. 1.10 MAX 0.15 0.00 0.38 0.22 0.80 0.60 0.40 8° 0° 0.23 0.08 COPLANARITY 0.10 012407-A 8 4.00 (0.1574) 3.80 (0.1497) 3.20 3.00 2.80 SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-187-AA Figure 26. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) Figure 27. 8-Lead Mini Small Outline Package [MSOP] (RM-8) Dimensions shown in millimeters 2.20 2.00 1.80 1.35 1.25 1.15 5 1 2.90 BSC 4 2 3 PIN 1 1.10 0.80 0.30 0.15 SEATING PLANE 4 2.80 BSC 1.60 BSC 1 2 3 PIN 1 0.65 BSC 1.00 0.90 0.70 0.10 MAX 5 2.40 2.10 1.80 0.95 BSC 0.40 0.10 0.22 0.08 0.46 0.36 0.26 0.10 COPLANARITY 1.90 BSC 1.30 1.15 0.90 1.45 MAX 0.15 MAX COMPLIANT TO JEDEC STANDARDS MO-203-AA 0.50 0.30 SEATING PLANE 0.22 0.08 10° 5° 0° COMPLIANT TO JEDEC STANDARDS MO-178-A A Figure 28. 5-Lead Thin Shrink Small Outline Transistor Package [SC70] (KS-5) Dimensions shown in millimeters Rev. D | Page 14 of 16 Figure 29. 5-Lead Small Outline Transistor Package [SOT-23] (RJ-5) Dimensions shown in millimeters 0.60 0.45 0.30 AD8519/AD8529 ORDERING GUIDE Model AD8519AKS-REEL7 AD8519AKSZ-REEL7 1 AD8519ART-REEL AD8519ART-REEL7 AD8519ARTZ-REEL1 AD8519ARTZ-REEL71 AD8519AR AD8519AR-REEL AD8519AR-REEL7 AD8519ARZ1 AD8519ARZ-REEL AD8519ARZ-REEL71 AD8529AR AD8529AR-REEL AD8529ARZ1 AD8529ARZ-REEL1 AD8529ARM-REEL AD8529ARMZ-REEL1 1 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C Package Description 5-Lead SC70 5-Lead SC70 5-Lead SOT-23 5-Lead SOT-23 5-Lead SOT-23 5-Lead SOT-23 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead SOIC_N 8-Lead MSOP 8-Lead MSOP Z = RoHS compliant part, # denotes RoHS compliant part may be top or bottom marked. Rev. D | Page 15 of 16 Package Option KS-5 KS-5 RJ-5 RJ-5 RJ-5 RJ-5 R-8 R-8 R-8 R-8 R-8 R-8 R-8 R-8 R-8 R-8 RM-8 RM-8 Branding Information A3B A11 A3A A3A A3A# A3A# A5A A5A# AD8519/AD8529 NOTES ©1998–2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C01756–0–5/07(D) Rev. D | Page 16 of 16
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