Phase Detector/Frequency Synthesizer
ADF4002-EP
Enhanced Product
FEATURES
GENERAL DESCRIPTION
400 MHz bandwidth
2.7 V to 3.3 V power supply
Separate charge pump supply (VP) allows extended
tuning voltage in 3 V systems
Programmable charge pump currents
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
104 MHz phase frequency detector
The ADF4002-EP frequency synthesizer is used to implement
local oscillators in the upconversion and downconversion sections
of wireless receivers and transmitters. It consists of a low noise
digital phase frequency detector (PFD), a precision charge pump,
a programmable reference divider, and a programmable N divider.
The 14-bit reference counter (R counter) allows selectable REFIN
frequencies at the PFD input. A complete phase-locked loop (PLL)
can be implemented if the synthesizer is used with an external
loop filter and voltage controlled oscillator (VCO). In addition,
by programming R and N to 1, the part can be used as a standalone PFD and charge pump.
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
(AQEC standard)
Military temperature range: −55°C to +125°C
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Product change notification
Qualification data available on request
Additional application and technical information can be found
in the ADF4002 data sheet.
APPLICATIONS
Clock conditioning
Clock generation
IF LO generation
FUNCTIONAL BLOCK DIAGRAM
AVDD
DVDD
VP
RSET
CPGND
REFERENCE
14-BIT
R COUNTER
REFIN
PHASE
FREQUENCY
DETECTOR
CHARGE
PUMP
CP
14
R COUNTER
LATCH
CLK
DATA
LE
24-BIT INPUT
REGISTER
22
LOCK
DETECT
FUNCTION
LATCH
CURRENT
SETTING 2
CPI3 CPI2 CPI1
CPI6 CPI5 CPI4
HIGH-Z
N COUNTER
LATCH
SDOUT
CURRENT
SETTING 1
AVDD
MUXOUT
MUX
SDOUT
RFINA
RFINB
13-BIT
N COUNTER
M3 M2 M1
CE
AGND
09187-001
ADF4002-EP
DGND
Figure 1.
Rev. A
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ADF4002-EP
Enhanced Product
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................5
Enhanced Product Features ............................................................ 1
Thermal Characteristics ...............................................................5
Applications ....................................................................................... 1
ESD Caution...................................................................................5
General Description ......................................................................... 1
Pin Configuration and Function Descriptions..............................6
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics ..............................................7
Revision History ............................................................................... 2
Outline Dimensions ..........................................................................8
Specifications..................................................................................... 3
Ordering Guide .............................................................................8
Timing Characteristics ................................................................ 4
REVISION HISTORY
9/2018—Rev. 0 to Rev. A
Changes to Features Section............................................................ 1
Added Enhanced Product Features Section.................................. 1
Changes to Figure 4 and Figure 5 ................................................... 7
Changes to Ordering Guide ............................................................ 9
11/2010—Revision 0: Initial Version
Rev. A | Page 2 of 8
Enhanced Product
ADF4002-EP
SPECIFICATIONS
AVDD = DVDD = 3 V ± 10%, AVDD ≤ VP ≤ 5.5 V, AGND = DGND = CPGND = 0 V, RSET = 5.1 kΩ, dBm referred to 50 Ω, TA = TMAX to TMIN,
unless otherwise noted. Operating temperature range is −55°C to +125°C.
Table 1.
Parameter
RF CHARACTERISTICS
RF Input Sensitivity
RF Input Frequency (RFIN)
REFIN CHARACTERISTICS
REFIN Input Frequency
REFIN Input Sensitivity1
REFIN Input Capacitance
REFIN Input Current
PHASE FREQUENCY DETECTOR (PFD)
Phase Detector Frequency2
CHARGE PUMP
ICP Sink/Source
High Value
Low Value
Absolute Accuracy
RSET Range
ICP Three-State Leakage
ICP vs. VCP
Sink and Source Current Matching
ICP vs. Temperature
LOGIC INPUTS
Input High Voltage, VIH
Input Low Voltage, VIL
Input Current, IINH, IINL
Input Capacitance, CIN
LOGIC OUTPUTS
Output High Voltage, VOH
Output High Current, IOH
Output Low Voltage, VOL
POWER SUPPLIES
AVDD
DVDD
VP
IDD3 (AIDD + DIDD)
IP
Power-Down Mode
NOISE CHARACTERISTICS
Normalized Phase Noise Floor (PNSYNTH)4, 5
Normalized 1/f Noise (PN1_f)4, 6
Min
Typ
Max
Unit
Test Conditions/Comments
−10
5
0
400
dBm
MHz
For RFIN < 5 MHz, ensure slew rate (SR) > 4 V/µs
20
0.8
300
AVDD
10
±100
MHz
V p-p
pF
µA
For REFIN < 20 MHz, ensure SR > 50 V/µs
Biased at AVDD/2 (ac coupling ensures AVDD/2 bias)
104
MHz
ABP[2:1] = 00 (2.9 ns antibacklash pulse width)
Programmable
mA
µA
%
kΩ
nA
%
%
%
RSET = 5.1 kΩ
5
625
2.5
3.0
11
1
1.5
2
2
1.4
0.6
±1
10
V
V
µA
pF
100
0.4
V
V
µA
V
1.4
DVDD − 0.4
2.7
AVDD
AVDD
3.3
1
V
V
V
mA
mA
µA
−222
−119
dBc/Hz
dBc/Hz
5.0
5.5
6.0
0.4
RSET = 5.1 kΩ
TA = 25°C
0.5 V ≤ VCP ≤ (VP − 0.5 V)
0.5 V ≤ VCP ≤ (VP − 0.5 V)
VCP = VP/2
Open-drain output, 1 kΩ pull-up resistor to 1.8 V
CMOS output
IOL = 500 µA
AVDD ≤ VP ≤ 5.5 V
TA = 25°C
AIDD + DIDD
PLL loop bandwidth = 500 kHz
Measured at 10 kHz offset; normalized to 1 GHz
AVDD = DVDD = 3 V.
Guaranteed by design. Sample tested to ensure compliance.
TA = 25°C; AVDD = DVDD = 3 V; RFIN = 350 MHz. The current for any other setup (25°C, 3.0 V) in mA is given by 2.35 + 0.0046 (REFIN) + 0.0062 (RF); RF frequency and REFIN
frequency in MHz.
4
All phase noise measurements were performed with a Rohde & Schwarz FSUP26 phase noise test system using the EVAL-ADF4002EBZ1 evaluation board and the
ultralow noise, 100 MHz OCXO from Wenzel (Part No. 501-16843) as the PLL reference.
5
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20logN (where N is the N divider value)
and 10logfPFD. PNSYNTH = PNTOT − 10logfPFD − 20logN.
6
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency (fRF) and at a
frequency offset (f) is given by PN = P1_f + 10log(10 kHz/f) + 20log(fRF/1 GHz). Both the normalized phase noise floor and the flicker noise are modeled in ADIsimPLL.
1
2
3
Rev. A | Page 3 of 8
ADF4002-EP
Enhanced Product
TIMING CHARACTERISTICS
AVDD = DVDD = 3 V ± 10%, AVDD ≤ VP ≤ 5.5 V, AGND = DGND = CPGND = 0 V, RSET = 5.1 kΩ, dBm referred to 50 Ω, TA = TMAX to TMIN,
unless otherwise noted. Operating temperature range is −55°C to +125°C.
Table 2.
Parameter
t1
t2
t3
t4
t5
t6
1
Limit1
10
10
25
25
10
20
Unit
ns min
ns min
ns min
ns min
ns min
ns min
Description
DATA to CLK setup time
DATA to CLK hold time
CLK high duration
CLK low duration
CLK to LE setup time
LE pulse width
Guaranteed by design, but not production tested.
Timing Diagram
t3
t4
CLK
t1
DATA DB23 (MSB)
t2
DB22
DB2
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t6
LE
09187-022
t5
LE
Figure 2. Timing Diagram
Rev. A | Page 4 of 8
Enhanced Product
ADF4002-EP
ABSOLUTE MAXIMUM RATINGS
This device is a high performance RF integrated circuit with an
ESD rating of
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